Universality and Multiplication of Gigahertz-Operated Silicon Pumps with Parts Per Million-Level Uncertainty.

The universality of physical phenomena is a pivotal concept underlying quantum standards. In this context, the realization of a quantum current standard using silicon single-electron pumps necessitates the verification of the equivalence across multiple devices. Herein, we experimentally investigate the universality of pumped currents from two different silicon single-electron devices which are placed inside the cryogen-free dilution refrigerator whose temperature (mixing chamber plate) was ∼150 mK under the operation of the pump devices. By direct comparison using an ultrastable current amplifier as a galvanometer, we confirm that two pumped currents are consistent with ∼1 ppm uncertainty. Furthermore, we realize quantum-current multiplication with a similar uncertainty by adding the currents of two different gigahertz (GHz)-operated silicon pumps, whose generated currents are confirmed to be identical. These results pave the way for realizing a quantum current standard in the nanoampere range and a quantum metrology triangle experiment using silicon pump devices.

Electronic transport in two stacked graphene monolayers.

We report on interlayer and lateral electronic transport measurements in two stacked graphene monolayers which have separate electrical contacts. The current-voltage characteristic across the two layers shows linear Ohmic behavior at zero magnetic field. At high magnetic fields, sequences of quantum Hall plateaus of the overlap region with filling factors 4, 8, and 12 are observed which can be explained by equilibration of the edge channel potentials of the individual graphene layers. An anomaly is observed at total filling factors ±2 in the overlap region. The I-V characteristic for interlayer transport turns nonlinear, and the Hall signal vanishes, indicating a magnetic field induced electrical decoupling of the two graphene layers.

Excitonic fano resonance in free-standing graphene.

We investigate the role of electron-hole correlations in the absorption of free-standing monolayer and bilayer graphene using optical transmission spectroscopy from 1.5 to 5.5 eV. Line shape analysis demonstrates that the ultraviolet region is dominated by an asymmetric Fano resonance. We attribute this to an excitonic resonance that forms near the van Hove singularity at the saddle point of the band structure and couples to the Dirac continuum. The Fano model quantitatively describes the experimental data all the way down to the infrared. In contrast, the common noninteracting particle picture cannot describe our data. These results suggest a profound connection between the absorption properties and the topology of the graphene band structure.

Unconventional Kondo effect in redox active single organic macrocyclic transistors.

Cyclo[6]- and cyclo[8]pyrrole, two aromatic expanded porphyrins, were studied in a single-molecule transistor (SMT) setup. The analyses of these compounds allowed us to observe an uncommon absence of an even-odd effect in the Kondo resonance in discrete, metal-free organic macrocyclic compounds. The findings from the SMT measurements of these cyclopyrroles were in accord with those from cyclic voltammetry (CV) studies and theoretical analyses. These findings provide support for the notion that SMT measurements could be useful as a tool for the characterization of similar types of aromatic macrocyclic compounds.

Hot phonons in an electrically biased graphene constriction.

Phonon-carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a phonon with other quasi-particles, in particular charge carriers as well as its companion phonons. The carrier phonon and phonon-phonon contributions to the phonon lifetime can be disentangled from temperature-dependent studies. Here, we address the importance of phonon-carrier interactions in Joule-heated graphene constrictions in order to contribute to the understanding of energy dissipation in graphene-based electronic devices. We demonstrate that gapless graphene grants electron-phonon interactions uncommon significance in particular at low carrier density. In conventional semiconductors, the band gap usually prevents the decay of phonons through electron-hole generation and also in metals or other semimetals the Fermi temperature is excessively large to enter the regime where electron-phonon coupling plays such a dominant role as in graphene in the investigated phonon temperature regime from 300 to 1600 K.

Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene.

We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization, gives rise to distinct electron-hole decoherence. The hole decoherence rate increases prominently with decreasing negative gate voltage while the electron decoherence rate does not exhibit any substantial gate dependence. Quantitatively, the hole decoherence rate is as large as the electron decoherence rate by a factor of two. We discuss possible microscopic origins including spin-exchange scattering consistent with our experimental observations.

Coherent Lattice Vibrations in Mono- and Few-Layer WSe2.

We report the observation of coherent lattice vibrations in mono- and few-layer WSe2 in the time domain, which were obtained by performing time-resolved transmission measurements. Upon the excitation of ultrashort pulses with the energy resonant to that of A excitons, coherent oscillations of the A1g optical phonon and longitudinal acoustic phonon at the M point of the Brillouin zone (LA(M)) were impulsively generated in monolayer WSe2. In multilayer WSe2 flakes, the interlayer breathing mode (B1) is found to be sensitive to the number of layers, demonstrating its usefulness in characterizing layered transition metal dichalcogenide materials. On the basis of temperature-dependent measurements, we find that the A1g optical phonon mode decays into two acoustic phonons through the anharmonic decay process.

A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis.

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.

High-order tunneling processes in single-porphyrin transistors.

Cotunneling and the Kondo effect are observed in single-electron transistors incorporating cobalt-porphyrins. These effects are attributed to high-order tunneling and strong coupling between the electrodes and the intervening porphyrin.

Room-temperature single-electron transistors using alkanedithiols.

We have fabricated single-electron transistors by alkanedithiol molecular self-assembly. The devices consist of spontaneously formed ultrasmall Au nanoparticles linked by alkanedithiols to nanometer-spaced Au electrodes created by electromigration. The devices reproducibly exhibit addition energies of a few hundred meV, which enables the observation of single-electron tunneling at room temperature. At low temperatures, tunneling through discrete energy levels in the Au nanoparticles is observed, which is accompanied by the excitations of molecular vibrations at large bias voltage.

Vibrational excitations in single trimetal-molecule transistors.

Single-molecule transistors incorporating trimetal molecules of Cu(3)(dpa)(4)Cl(2) and Ni(3)(dpa)(4)Cl(2) (dpa = 2,2'-dipyridylamide) have been fabricated. Conductance is measured as a function of bias and gate voltages at low temperature, showing single-electron tunneling behavior through the molecules. Additional structures corresponding to the excitations in the molecules are observed, which can be attributed to intramolecular vibrational excitations coupled to the electron tunneling processes. The energies of the vibrational states are dependent on the redox state of the included molecules.