CMOS-based cryogenic control of silicon quantum circuits.

The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications1. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics. Advanced lithography supports the fabrication of both control electronics and qubits in silicon using technology compatible with complementary metal oxide semiconductors (CMOS)2. When the electronics are designed to operate at cryogenic temperatures, they can ultimately be integrated with the qubits on the same die or package, overcoming the 'wiring bottleneck'3-6. Here we report a cryogenic CMOS control chip operating at 3 kelvin, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20 millikelvin. We first benchmark the control chip and find an electrical performance consistent with qubit operations of 99.99 per cent fidelity, assuming ideal qubits. Next, we use it to coherently control actual qubits encoded in the spin of single electrons confined in silicon quantum dots7-9 and find that the cryogenic control chip achieves the same fidelity as commercial instruments at room temperature. Furthermore, we demonstrate the capabilities of the control chip by programming a number of benchmarking protocols, as well as the Deutsch-Josza algorithm10, on a two-qubit quantum processor. These results open up the way towards a fully integrated, scalable silicon-based quantum computer.

Planar 16-band metasurface-enhanced spectral filter for integrated image sensing.

We study theoretically and demonstrate experimentally a 16-band narrow band wavelength selective filter in the near-infrared range. The combination of a pair of distributed Bragg reflectors with a sub-wavelength grating metasurface embedded in the intra-cavity provides a narrow response which can be tuned by adjusting the geometry of the sub-wavelength grating metasurface. The key advantage of this approach is its ease of fabrication, where the spectral response is tuned by merely changing the grating period, resulting in a perfectly planar geometry that can be easily integrated with a broad variety of photodetectors, thus enabling attractive applications such as bio-imaging, time-of-flight sensors and LiDAR. The experimental results are supported by numerical simulations and effective medium theory that unveil the mechanisms that lead to the optical response of the device. It is also shown how the polarization dependence of the structure can be used to determine very accurately the polarization of incoming light.

LinoSPAD2: an FPGA-based, hardware-reconfigurable 512×1 single-photon camera system.

We report on LinoSPAD2, a single-photon camera system, comprising a 512×1 single-photon avalanche diode (SPAD) front-end and one or two FPGA-based back-ends. Digital signals generated by the SPADs are processed by the FPGA in real time, whereas the FPGA offers full reconfigurability at a very high level of granularity both in time and space domains. The LinoSPAD2 camera system can process 512 SPADs simultaneously through 256 channels, duplicated on each FPGA-based back-end, with a bank of 64 time-to-digital converters (TDCs) operating at 133 MSa/s, whereas each TDC has a time resolution of 20 ps (LSB). To the best of our knowledge, LinoSPAD2 is the first fully reconfigurable SPAD camera system of large format. The SPAD front-end features a pitch of 26.2 µm, a native fill factor of 25.1%, and a microlens array achieving 2.3× concentration factor. At room temperature, the median dark count rate (DCR) is 80 cps at 7 V excess bias, the peak photon detection probability (PDP) is 53% at 520 nm wavelength, and the single-photon timing resolution (SPTR) is 50 ps FWHM. The instrument response function (IRF) is around 100 ps FWHM at system level. The LinoSPAD2 camera system is suitable for numerous applications, including LiDAR imaging, heralded spectroscopy, compressive Raman sensing, and other computational imaging techniques.

Challenges and prospects for multi-chip microlens imprints on front-side illuminated SPAD imagers.

The overall sensitivity of frontside-illuminated, silicon single-photon avalanche diode (SPAD) arrays has often suffered from fill factor limitations. The fill factor loss can however be recovered by employing microlenses, whereby the challenges specific to SPAD arrays are represented by large pixel pitch (> 10 µm), low native fill factor (as low as ∼10%), and large size (up to 10 mm). In this work we report on the implementation of refractive microlenses by means of photoresist masters, used to fabricate molds for imprints of UV curable hybrid polymers deposited on SPAD arrays. Replications were successfully carried out for the first time, to the best of our knowledge, at wafer reticle level on different designs in the same technology and on single large SPAD arrays with very thin residual layers (∼10 µm), as needed for better efficiency at higher numerical aperture (NA > 0.25). In general, concentration factors within 15-20% of the simulation results were obtained for the smaller arrays (32×32 and 512×1), achieving for example an effective fill factor of 75.6-83.2% for a 28.5 µm pixel pitch with a native fill factor of 28%. A concentration factor up to 4.2 was measured on large 512×512 arrays with a pixel pitch of 16.38 µm and a native fill factor of 10.5%, whereas improved simulation tools could give a better estimate of the actual concentration factor. Spectral measurements were also carried out, resulting in good and uniform transmission in the visible and NIR.

Single-photon avalanche diode fabricated in standard 55†nm bipolar-CMOS-DMOS technology with sub-20†V breakdown voltage.

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well available in BCD is utilized to implement the avalanche multiplication region. The resulting SPAD has a breakdown voltage of 18.4 V while achieving an excellent dark count rate of 4.4 cps/µm2 at the excess bias voltage of 7 V in spite of the advanced technology node. At the same time, the device achieves a high peak photon detection probability (PDP) of 70.1% at 450 nm thanks to the high and uniform E-field. Its PDP values at 850 and 940 nm, wavelengths of interest for 3D ranging applications reach 7.2 and 3.1%, respectively, with the use of deep N-well. The timing jitter of the SPAD, full width at half maximum (FWHM), is 91 ps at 850 nm. It is expected that the presented SPAD enables cost-effective time-of-flight and LiDAR sensors with the advanced standard technology for many mobile applications.

Light detection and ranging with entangled photons.

Single-photon light detection and ranging (LiDAR) is a key technology for depth imaging through complex environments. Despite recent advances, an open challenge is the ability to isolate the LiDAR signal from other spurious sources including background light and jamming signals. Here we show that a time-resolved coincidence scheme can address these challenges by exploiting spatio-temporal correlations between entangled photon pairs. We demonstrate that a photon-pair-based LiDAR can distill desired depth information in the presence of both synchronous and asynchronous spurious signals without prior knowledge of the scene and the target object. This result enables the development of robust and secure quantum LiDAR systems and paves the way to time-resolved quantum imaging applications.

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications.

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is found that the dark count rate (DCR) levels are dependent on the number and the type of defects created. A new stepwise increase in the DCR is presented. Afterpulsing was found to be a significant contributor to the observed DCR increase. A new model for DCR increase prediction is proposed considering afterpulsing. Most of the samples under test retain reasonable DCR levels after irradiation, showing high tolerance to ionizing and displacement damage caused by protons. Following irradiation, self-healing was observed at room temperature. Furthermore, high-temperature annealing shows potential for accelerating recovery. Overall, the results show the suitability of SPADs as optical detectors for long-term space missions or as detectors for high-energy particles.

Heralded Spectroscopy Reveals Exciton-Exciton Correlations in Single Colloidal Quantum Dots.

Multiply excited states in semiconductor quantum dots feature intriguing physics and play a crucial role in nanocrystal-based technologies. While photoluminescence provides a natural probe to investigate these states, room-temperature single-particle spectroscopy of their emission has proved elusive due to the temporal and spectral overlap with emission from the singly excited and charged states. Here, we introduce biexciton heralded spectroscopy enabled by a single-photon avalanche diode array based spectrometer. This allows us to directly observe biexciton-exciton emission cascades and measure the biexciton binding energy of single quantum dots at room temperature, even though it is well below the scale of thermal broadening and spectral diffusion. Furthermore, we uncover correlations hitherto masked in ensembles of the biexciton binding energy with both charge-carrier confinement and fluctuations of the local electrostatic potential. Heralded spectroscopy has the potential of greatly extending our understanding of charge-carrier dynamics in multielectron systems and of parallelization of quantum optics protocols.

Theoretical minimum uncertainty of single-molecule localizations using a single-photon avalanche diode array.

Single-photon avalanche diode (SPAD) arrays can be used for single-molecule localization microscopy (SMLM) because of their high frame rate and lack of readout noise. SPAD arrays have a binary frame output, which means photon arrivals should be described as a binomial process rather than a Poissonian process. Consequentially, the theoretical minimum uncertainty of the localizations is not accurately predicted by the Poissonian Cramér-Rao lower bound (CRLB). Here, we derive a binomial CRLB and benchmark it using simulated and experimental data. We show that if the expected photon count is larger than one for all pixels within one standard deviation of a Gaussian point spread function, the binomial CRLB gives a 46% higher theoretical uncertainty than the Poissonian CRLB. For typical SMLM photon fluxes, where no saturation occurs, the binomial CRLB predicts the same uncertainty as the Poissonian CRLB. Therefore, the binomial CRLB can be used to predict and benchmark localization uncertainty for SMLM with SPAD arrays for all practical emitter intensities.

A Scaling Law for SPAD Pixel Miniaturization.

The growing demands on compact and high-definition single-photon avalanche diode (SPAD) arrays have motivated researchers to explore pixel miniaturization techniques to achieve sub-10 µm pixels. The scaling of the SPAD pixel size has an impact on key performance metrics, and it is, thereby, critical to conduct a systematic analysis of the underlying tradeoffs in miniaturized SPADs. On the basis of the general assumptions and constraints for layout geometry, we performed an analytical formulation of the scaling laws for the key metrics, such as the fill factor (FF), photon detection probability (PDP), dark count rate (DCR), correlated noise, and power consumption. Numerical calculations for various parameter sets indicated that some of the metrics, such as the DCR and power consumption, were improved by pixel miniaturization, whereas other metrics, such as the FF and PDP, were degraded. Comparison of the theoretically estimated scaling trends with previously published experimental results suggests that the scaling law analysis is in good agreement with practical SPAD devices. Our scaling law analysis could provide a useful tool to conduct a detailed performance comparison between various process, device, and layout configurations, which is essential for pushing the limit of SPAD pixel miniaturization toward sub-2 µm-pitch SPADs.

A Pixel Design of a Branching Ultra-Highspeed Image Sensor.

A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizontal motion of signal carriers. On the front side, the pixel has a guide gate at the center, branching to six first-branching gates, each bifurcating to second-branching gates, and finally connected to 12 (=6×2) floating diffusions. The signals are either read out after an image capture operation to replay 12 to 48 consecutive images, or continuously transferred to a memory chip stacked on the front side of the sensor chip and converted to digital signals. A CCD burst image sensor enables a noiseless signal transfer from a photodiode to the in-situ storage even at very high frame rates. However, the pixel count conflicts with the frame count due to the large pixel size for the relatively large in-pixel CCD memory elements. A CMOS burst image sensor can use small trench-type capacitors for memory elements, instead of CCD channels. However, the transfer noise from a floating diffusion to the memory element increases in proportion to the square root of the frame rate. The Hanabi chip overcomes the compromise between these pros and cons.

High fill-factor miniaturized SPAD arrays with a guard-ring-sharing technique.

We present a novel guard-ring-sharing technique to push the limit of SPAD pixel miniaturization, and to demonstrate the operation of SPAD arrays with a 2.2 µm-pitch, the smallest ever reported. Device simulation and preliminary tests suggest that the optimized device design ensures the electrical isolation of SPADs with guard-ring sharing. 4×4 SPAD arrays with two parallel selective readout circuits are designed in 180 nm CMOS technology. SPAD characteristics for the pixel pitch of 2.2, 3, and 4 µm are systematically measured as a function of an active diameter, active-to-active distance, and excess bias. For a 4 µm-pitch, the fill factor is 42.4%, the maximum PDP 33.5%, the median DCR 2.5 cps, the timing jitter 88 ps, and the crosstalk probability is 3.57%, while the afterpulsing probability is 0.21%. Finally, we verified the feasibility of the proposed technique towards compact multi-megapixel 3D-stacked SPAD arrays.

Multimodal imaging combining time-domain near-infrared optical tomography and continuous-wave fluorescence molecular tomography.

Fluorescence molecular tomography (FMT) emerges as a powerful non-invasive imaging tool with the ability to resolve fluorescence signals from sources located deep in living tissues. Yet, the accuracy of FMT reconstruction depends on the deviation of the assumed optical properties from the actual values. In this work, we improved the accuracy of the initial optical properties required for FMT using a new-generation time-domain (TD) near-infrared optical tomography (NIROT) system, which effectively decouples scattering and absorption coefficients. We proposed a multimodal paradigm combining TD-NIROT and continuous-wave (CW) FMT. Both numerical simulation and experiments were performed on a heterogeneous phantom containing a fluorescent inclusion. The results demonstrate significant improvement in the FMT reconstruction by taking the NIROT-derived optical properties as prior information. The multimodal method is attractive for preclinical studies and tumor diagnostics since both functional and molecular information can be obtained.

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light.

The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call "super temporal resolution" the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate material for the photodiode (Ge PD) for visible light since the absorption coefficient of Ge for the wavelength is several tens of times higher than that of Si, allowing a very thin PD. On the other hand, the saturation drift velocity of electrons in Ge is about 2/3 of that in Si. The ratio suggests an ultra-short propagation time of electrons in the Ge PD. However, the diffusion coefficient of electrons in Ge is four times higher than that of Si. Therefore, Monte Carlo simulations were applied to analyze the temporal resolution of the Ge PD. The estimated theoretical temporal resolution limit is 0.26 ps, while the practical limit is 1.41 ps. To achieve a super temporal resolution better than 11.1 ps, the driver circuit must operate at least 100 GHz. It is thus proposed to develop, at first, a short-wavelength infrared (SWIR) ultra-high-speed image sensor with a thicker and wider Ge PD, and then gradually decrease the size along with the progress of the driver circuits.

Quantum correlation measurement with single photon avalanche diode arrays.

Temporal photon correlation measurement, instrumental to probing the quantum properties of light, typically requires multiple single photon detectors. Progress in single photon avalanche diode (SPAD) array technology highlights their potential as high-performance detector arrays for quantum imaging and photon number-resolving (PNR) experiments. Here, we demonstrate this potential by incorporating a novel on-chip SPAD array with 42% peak photon detection efficiency, low dark count rate and crosstalk probability of 0.14% per detection in a confocal microscope. This enables reliable measurements of second and third order photon correlations from a single quantum dot emitter. Our analysis overcomes the inter-detector optical crosstalk background even though it is over an order of magnitude larger than our faint signal. To showcase the vast application space of such an approach, we implement a recently introduced super-resolution imaging method, quantum image scanning microscopy (Q-ISM).

A 512×512 SPAD Image Sensor with Integrated Gating for Widefield FLIM.

We report on SwissSPAD2, an image sensor with 512×512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-bit memory, and a gating mechanism capable of turning the SPAD on and off, with a skew of 250ps and 344ps, respectively, for a minimum duration of 5.75ns. The sensor is designed to achieve a frame rate of up to 97,700 binary frames per second and sub-40ps gate shifts. By synchronizing it with a pulsed laser and using multiple successive overlapping gates, one can reconstruct a molecule's fluorescent response with picosecond temporal resolution. Thanks to the sensor's number of pixels (the largest to date) and the fully integrated gated operation, SwissSPAD2 enables widefield FLIM with an all-solid-state solution and at relatively high frame rates. This was demonstrated with preliminary results on organic dyes and semiconductor quantum dots using both decay fitting and phasor analysis. Furthermore, pixels with an exceptionally low dark count rate and high photon detection probability enable uniform and high quality imaging of biologically relevant fluorescent samples stained with multiple dyes. While future versions will feature the addition of microlenses and optimize firmware speed, our results open the way to low-cost alternatives to commercially available scientific time-resolved imagers.

Modeling and Analysis of a Direct Time-of-Flight Sensor Architecture for LiDAR Applications.

Direct time-of-flight (DTOF) is a prominent depth sensing method in light detection and ranging (LiDAR) applications. Single-photon avalanche diode (SPAD) arrays integrated in DTOF sensors have demonstrated excellent ranging and 3D imaging capabilities, making them promising candidates for LiDARs. However, high background noise due to solar exposure limits their performance and degrades the signal-to-background noise ratio (SBR). Noise-filtering techniques based on coincidence detection and time-gating have been implemented to mitigate this challenge but 3D imaging of a wide dynamic range scene is an ongoing issue. In this paper, we propose a coincidence-based DTOF sensor architecture to address the aforementioned challenges. The architecture is analyzed using a probabilistic model and simulation. A flash LiDAR setup is simulated with typical operating conditions of a wide angle field-of-view (FOV = 40 ° ) in a 50 klux ambient light assumption. Single-point ranging simulations are obtained for distances up to 150 m using the DTOF model. An activity-dependent coincidence is proposed as a way to improve imaging of wide dynamic range targets. An example scene with targets ranging between 8-60% reflectivity is used to simulate the proposed method. The model predicts that a single threshold cannot yield an accurate reconstruction and a higher (lower) reflective target requires a higher (lower) coincidence threshold. Further, a pixel-clustering scheme is introduced, capable of providing multiple simultaneous timing information as a means to enhance throughput and reduce timing uncertainty. Example scenes are reconstructed to distinguish up to 4 distinct target peaks simulated with a resolution of 500 ps. Alternatively, a time-gating mode is simulated where in the DTOF sensor performs target-selective ranging. Simulation results show reconstruction of a 10% reflective target at 20 m in the presence of a retro-reflective equivalent with a 60% reflectivity at 5 m within the same FOV.

Light-In-Flight Imaging by a Silicon Image Sensor: Toward the Theoretical Highest Frame Rate.

Light in flight was captured by a single shot of a newly developed backside-illuminated multi-collection-gate image sensor at a frame interval of 10 ns without high-speed gating devices such as a streak camera or post data processes. This paper reports the achievement and further evolution of the image sensor toward the theoretical temporal resolution limit of 11.1 ps derived by the authors. The theoretical analysis revealed the conditions to minimize the temporal resolution. Simulations show that the image sensor designed following the specified conditions and fabricated by existing technology will achieve a frame interval of 50 ps. The sensor, 200 times faster than our latest sensor will innovate advanced analytical apparatuses using time-of-flight or lifetime measurements, such as imaging TOF-MS, FLIM, pulse neutron tomography, PET, LIDAR, and more, beyond these known applications.

Widefield High Frame Rate Single-Photon SPAD Imagers for SPIM-FCS.

Photon-counting sensors based on standard complementary metal-oxide-semiconductor single-photon avalanche diodes (SPADs) represent an emerging class of imagers that enable the counting and/or timing of single photons at zero readout noise (better than high-speed electron-multiplying charge-coupling devices) and over large arrays. They have seen substantial progress over the last 15 years, increasing their spatial resolution, timing accuracy, and sensitivity while reducing spurious signals such as afterpulsing and dark counts. They are increasingly being applied for time-resolved applications with the added advantage of enabling real-time options such as autocorrelation. We report in this study on the use of such a state-of-the-art 512 × 128 SPAD array, capable of a time resolution of 10-5-10-6 s for full frames while retaining acceptable photosensitivity thanks to the use of dedicated microlenses, in a selective plane illumination-fluorescence correlation spectroscopy setup. The latter allows us to perform thousands of fluorescence-correlation spectroscopy measurements simultaneously in a two-dimensional slice of the sample. This high-speed SPAD imager enables the measurement of molecular motion of small fluorescent particles such as single chemical dye molecules. Inhomogeneities in the molecular detection efficiency were compensated for by means of a global fit of the auto- and cross-correlation curves, which also made a calibration-free measurement of various samples possible. The afterpulsing effect could also be mitigated, making the measurement of the diffusion of Alexa-488 possible, and the overall result quality was further improved by spatial binning. The particle concentrations in the focus tend to be overestimated by a factor of 1.7 compared to a confocal setup; a calibration is thus required if absolute concentrations need to be measured. The first high-speed selective plane illumination-fluorescence correlation spectroscopy in vivo measurements to our knowledge were also recorded: although two-component fit models could not be employed because of noise, the diffusion of eGFP oligomers in HeLa cells could be measured. Sensitivity and noise will be further improved in the next generation of SPAD-based widefield sensors, which are currently under testing.

Dynamic range extension for photon counting arrays.

Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an output count rate to 1/Tdead. In this paper, we present a thorough analysis, which can actually be applied to any photon counting detector, on how to extend the SPAD dynamic range by exploiting the nonlinear photon response at high count rates and for different recharge mechanisms. We applied passive, active event-driven and clock-driven (i.e. clocked, following quanta image sensor response) recharge directly to the SPADs. The photon response, photon count standard deviation, signal-to-noise ratio and dynamic range were measured and compared to models. Measurements were performed with a CMOS SPAD array targeted for image scanning microscopy, featuring best-in-class 11 V excess bias, 55% peak photon detection probability at 520 nm and >40% from 440 to 640 nm. The array features an extremely low median dark count rate below 0.05 cps/µm2 at 9 V of excess bias and 0°C. We show that active event-driven recharge provides ×75 dynamic range extension and offers novel ways for high dynamic range imaging. When compared to the clock-driven recharge and the quanta image sensor approach, the dynamic range is extended by a factor of ×12.7-26.4. Additionally, for the first time, we evaluate the influence of clock-driven recharge on the SPAD afterpulsing.