Measurement of LED chips using a large-area silicon photodiode.

We propose the output power measurement of bare-wafer/chip light-emitting diodes (LEDs) using a large-area silicon (Si) photodiode with a simple structure and high accuracy relative to the conventional partial flux measurement using an integrating sphere. To obtain the optical characteristics of the LED chips measured using the two methods, three-dimensional ray-trace simulations are used to perform the measurement deviations owing to the chip position offset or tilt angle. The ray-tracing simulation results demonstrate that the deviation of light remaining in the integrating sphere is approximately 65% for the vertical LED chip and 53% for the flip-chip LED chip if the measurement distance in partial flux method is set to be 5-40 mm. By contrast, the deviation of light hitting the photodiode is only 15% for the vertical LED chip and 23% for the flip-chip LED chip if the large-area Si photodiode is used to measure the output power with the same measurement distance. As a result, the large-area Si photodiode method practically reduces the output power measurement deviations of the bare-wafer/chip LED, so that a high-accuracy measurement can be achieved in the mass production of the bare-wafer/chip LED without the complicated integrating sphere structure.

Photocurrent enhancement of SnO2 nanowires through Au-nanoparticles decoration.

It is found that the sensitivity of photoresponse of SnO(2) nanowires can be enhanced by metallic particles decoration. The underlying mechanism is attributed to the formation of the Schottky junction on nanowires surface in the vicinity of metallic nanoparticles. The increment in the barrier height and width of space charge region due to the existence of Schottky junction increases the surface electric field and enhances the spatial separation effect, which then prolongs the lifetime of photoinduced electron and consequently increases the photoresponse gain. The result shown here provides an alternative route for enhancing the photoresponse of semiconductor nanostructures, which should be useful for creating highly sensitive photodetectors.

Patterned growth of ZnO nanostructures based on the templation of plant cell walls.

A new and general approach based on vapor-phase transport technique using Au-coated plant cell walls has been developed to synthesize patterned ZnO nanostructures. Nanowires, nanodendrites and nanotowers were fabricated by adsorption of different metallic ions on plant cell walls. It is shown that plant cell wall can serve as a well-defined template to grow patterned nanostructures. Using transmission electron microscope and Raman spectroscopy, the structural characteristic of the nanostructures were investigated, exhibiting good crystallinity and hexagonal symmetry of the nanomaterials. Quite interestingly, the shape of the nanostructures can be controlled by the metallic ions adsorbed on plant cell walls. Without metallic ions, a homogeneous distribution of nanowires was obtained. On the other hand, with Ni+2 or Fe+3 ions, nanodendrites and nanotowers were observed, respectively. Our approach provides a low cost method that opens up new possibilities for the growth of patterned nanomaterials with desired shapes.

Dopant morphology as the factor limiting graphene conductivity.

Graphene's low intrinsic carrier concentration necessitates extrinsic doping to enhance its conductivity and improve its performance for application as electrodes or transparent conductors. Despite this importance limited knowledge of the doping process at application-relevant conditions exists. Employing in-situ carrier transport and Raman characterization of different dopants, we here explore the fundamental mechanisms limiting the effectiveness of doping at different doping levels. Three distinct transport regimes for increasing dopant concentration could be identified. First the agglomeration of dopants into clusters provides a route to increase the graphene conductivity through formation of ordered scatterers. As the cluster grows, the charge transfer efficiency between graphene and additional dopants decreases due to emerging polarization effects. Finally, large dopant clusters hinder the carrier motion and cause percolative transport that leads to an unexpected change of the Hall effect. The presented results help identifying the range of beneficial doping density and guide the choice of suitable dopants for graphene's future applications.

Recombination dynamics in CdTe/CdSe type-II quantum dots.

Recombination dynamics in CdTe/CdSe core-shell type-II quantum dots (QDs) has been investigated by time-resolved photoluminescence (PL) spectroscopy. A very long PL decay time of several hundred nanoseconds has been found at low temperature, which can be rationalized by the spatially separated electrons and holes occurring in a type-II heterostructure. For the temperature dependence of the radiative lifetime, the linewidth and the peak energy of PL spectra show that the recombination of carriers is dominated by delocalized excitons at temperatures below 150 K, while the mixture of delocalized excitons, electrons and holes overwhelms the process at higher temperature. The binding energy of delocalized excitons obtained from the temperature dependence of the non-radiative lifetime is consistent with the theoretical value. The energy dependence of lifetime measurements reveals a third power relationship between the radiative lifetime and the radius of QDs, the light of which can be shed by the quantum confinement effect. In addition, the radiative decay rate is found to be proportional to the square root of excitation power, arising from the change of wavefunction overlap of electrons and holes due to the band bending effect, which is an inherent character of a type-II band alignment.