Compensation of Heat Effect in Dielectric Barrier Discharge (DBD) Plasma System for Radar Cross-Section (RCS) Reduction.

In this study, the problems encountered in radar cross-section (RCS) measurement experiments utilizing a dielectric barrier discharge (DBD) plasma system are examined and an effective solution is proposed. A DBD plasma system generates heat due to the high bias voltage required for plasma generation. The thermal-induced structural deformation of the DBD structure caused by this high voltage and its impact on RCS measurements are analyzed. In addition, techniques for minimizing the thermal-induced deformation and compensation methods for addressing the minimized deformation are proposed. Furthermore, RCS measurements are conducted on two kinds of DBD structures using the proposed method to experimentally demonstrate the improved agreement between the simulation and measurement results. For both structures, the RCS experimental results are in very good agreement with the simulation results, which enables accurate plasma characterization. In conclusion, it can be expected that the proposed method can be used to provide more accurate RCS measurements on various DBD structures that generate high heat.

On Encapsulated Dielectric Barrier Discharge Plasma Sources for Radar Cross Section Reduction in Mobile Environments.

This paper deals with the practical application of Radar Cross Section (RCS) reduction technology using plasma. Although various plasma application technologies for RCS reduction have been studied, there are still many issues to be addressed for practical implementation. In order to achieve actual application, the discharge should be sustained regardless of the external environment of the aircraft. It is also important to investigate the actual plasma parameters to determine the expected RCS reduction effect. Building upon previous studies that optimized the electrodes for RCS reduction, this study fabricates a Dielectric Barrier Discharge (DBD) source suitable for dynamic environments and verifies the power consumption during one cycle of plasma generation. The obtained results are expected to contribute to the optimization of DBD electrodes for plasma RCS reduction.

Development of the Tele-Measurement of Plasma Uniformity via Surface Wave Information (TUSI) Probe for Non-Invasive In-Situ Monitoring of Electron Density Uniformity in Plasma Display Fabrication Process.

The importance of monitoring the electron density uniformity of plasma has attracted significant attention in material processing, with the goal of improving production yield. This paper presents a non-invasive microwave probe for in-situ monitoring electron density uniformity, called the Tele-measurement of plasma Uniformity via Surface wave Information (TUSI) probe. The TUSI probe consists of eight non-invasive antennae and each antenna estimates electron density above the antenna by measuring the surface wave resonance frequency in a reflection microwave frequency spectrum (S11). The estimated densities provide electron density uniformity. For demonstration, we compared it with the precise microwave probe and results revealed that the TUSI probe can monitor plasma uniformity. Furthermore, we demonstrated the operation of the TUSI probe beneath a quartz or wafer. In conclusion, the demonstration results indicated that the TUSI probe can be used as an instrument for a non-invasive in-situ method for measuring electron density uniformity.

Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma.

As the analysis of complicated reaction chemistry in bulk plasma has become more important, especially in plasma processing, quantifying radical density is now in focus. For this work, appearance potential mass spectrometry (APMS) is widely used; however, the original APMS can produce large errors depending on the fitting process, as the fitting range is not exactly defined. In this research, to reduce errors resulting from the fitting process of the original method, a new APMS approach that eliminates the fitting process is suggested. Comparing the neutral densities in He plasma between the conventional method and the new method, along with the real neutral density obtained using the ideal gas equation, confirmed that the proposed quantification approach can provide more accurate results. This research will contribute to improving the precision of plasma diagnosis and help elucidate the plasma etching process.

Design of Piezoelectric Actuator for Braille Module by Finite Element Method.

Piezoelectric actuators, exhibiting large displacement and torque, are attractive for use in a broad range of actuator applications. One of the important applications is a tactile device, e.g., refreshable Braille display. Piezoelectric actuation in the Braille module requires large torque and large displacement for the tactile sensing of the human finger. In this study, we design piezoelectric actuators for the tactile interface including a Braille cell by finite element method (FEM) simulations. FEM simulations allow us to capture the entire device physics and solve the coupled piezoelectricity/solid mechanics problem. We investigated the effect of the structure, geometric variation, and physical properties of the materials used on the displacement and torque force. The studied structure includes a trilayer bimorph consisting of piezoelectric and supporting layers, and a multilayer with multiple bimorphs. The simulation result provides a useful guide toward piezoelectric actuators of tactile function.

Electron-Lattice Coupling in Correlated Materials of Low Electron Occupancy.

In correlated materials including transition metal oxides, electronic properties and functionalities are modulated and enriched by couplings between the electron and lattice degrees of freedom. These couplings are controlled by external parameters such as chemical doping, pressure, magnetic and electric fields, and light irradiation. However, the electron-lattice coupling relies on orbital characters, i.e., symmetry and occupancy, of t2g and eg orbitals, so that a large electron-lattice coupling is limited to eg electron system, whereas t2g electron system exhibits an inherently weak coupling. Here, we design and demonstrate a strongly enhanced electron-lattice coupling in electron-doped SrTiO3, that is, the t2g electron system. In ultrathin films of electron-doped SrTiO3 [i.e., (La0.25Sr0.75)TiO3], we reveal the strong electron-lattice-orbital coupling, which is manifested by extremely increased tetragonality and the corresponding metal-to-insulator transition. Our findings open the way of an active tuning of the charge-lattice-orbital coupling to obtain new functionalities relevant to emerging nanoelectronic devices.

Surface triggered stabilization of metastable charge-ordered phase in SrTiO3.

Charge ordering (CO), characterized by a periodic modulation of electron density and lattice distortion, has been a fundamental topic in condensed matter physics, serving as a potential platform for inducing novel functional properties. The charge-ordered phase is known to occur in a doped system with high d-electron occupancy, rather than low occupancy. Here, we report the realization of the charge-ordered phase in electron-doped (100) SrTiO3 epitaxial thin films that have the lowest d-electron occupancy i.e., d1-d0. Theoretical calculation predicts the presence of a metastable CO state in the bulk state of electron-doped SrTiO3. Atomic scale analysis reveals that (100) surface distortion favors electron-lattice coupling for the charge-ordered state, and triggering the stabilization of the CO phase from a correlated metal state. This stabilization extends up to six unit cells from the top surface to the interior. Our approach offers an insight into the means of stabilizing a new phase of matter, extending CO phase to the lowest electron occupancy and encompassing a wide range of 3d transition metal oxides.

Study on OH Radical Production Depending on the Pulse Characteristics in an Atmospheric-Pressure Nanosecond-Pulsed Plasma Jet.

Hydroxyl radicals (OH) play a crucial role in plasma-bio applications. As pulsed plasma operation is preferred, and even expanded to the nanosecond range, it is essential to study the relationship between OH radical production and pulse characteristics. In this study, we use optical emission spectroscopy to investigate OH radical production with nanosecond pulse characteristics. The experimental results reveal that longer pulses generate more OH radicals. To confirm the effect of pulse properties on OH radical generation, we conduct computational chemical simulations, focusing on two types of pulse properties: pulse instant power and pulse width. The simulation results show that, similar to the experimental results, longer pulses generate more OH radicals. In the nanosecond range, reaction time is critical for OH radical generation. In terms of chemical aspects, N2 metastable species mainly contribute to OH radical generation. It is a unique behavior observed in nanosecond range pulsed operation. Furthermore, humidity can turn over the tendency of OH radical production in nanosecond pulses. In a humid condition, shorter pulses are advantageous for generating OH radicals. Electrons play key roles in this condition and high instant power contributes to them.

Determination of Plasma Potential Using an Emissive Probe with Floating Potential Method.

Despite over 90 years of study on the emissive probe, a plasma diagnostic tool used to measure plasma potential, its underlying physics has yet to be fully understood. In this study, we investigated the voltages along the hot filament wire and emitting thermal electrons and proved which voltage reflects the plasma potential. Using a circuit model incorporating the floating condition, we found that the lowest potential on the plasma-exposed filament provides a close approximation of the plasma potential. This theoretical result was verified with a comparison of emissive probe measurements and Langmuir probe measurements in inductively coupled plasma. This work provides a significant contribution to the accurate measurement of plasma potential using the emissive probe with the floating potential method.

Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction.

This paper proposes the use of environmentally friendly alternatives, C6F6 and C4H2F6, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO2 plasma etching, instead of conventional precursors C4F8 and CHF3. The study employs scanning electron microscopy for etch profile analysis and quadrupole mass spectrometry for plasma diagnosis. Ion bombardment energy at the etching conditions is determined through self-bias voltage measurements, while densities of radical species are obtained using quadrupole mass spectroscopy. The obtained results compare the etch performance, including etch rate and selectivity, between C4F8 and C6F6, as well as between CHF3 and C4H2F6. Furthermore, greenhouse gas (GHG) emissions are evaluated using a million metric ton of carbon dioxide equivalent, indicating significantly lower emissions when replacing conventional precursors with the proposed alternatives. The results suggest that a significant GHG emissions reduction can be achieved from the investigated alternatives without a deterioration in SiO2 etching characteristics. This research contributes to the development of alternative precursors for reducing global warming impacts.

On the Quenching of Electron Temperature in Inductively Coupled Plasma.

Electron temperature has attracted great attention in plasma processing, as it dominates the production of chemical species and energetic ions that impact the processing. Despite having been studied for several decades, the mechanism behind the quenching of electron temperature with increasing discharge power has not been fully understood. In this work, we investigated the quenching of electron temperature in an inductively coupled plasma source using Langmuir probe diagnostics, and suggested a quenching mechanism based on the skin effect of electromagnetic waves within local- and non-local kinetic regimes. This finding provides insight into the quenching mechanism and has implications for controlling electron temperature, thereby enabling efficient plasma material processing.

Enhancement of Ar Ion Flux on the Substrate by Heterogeneous Charge Transfer Collision of Ar Atom with He Ion in an Inductively Coupled Ar/He Plasma.

The understanding of ion dynamics in plasma applications has received significant attention. In this study, we examined these effects between He and Ar species, focusing on the Ar ion flux on the substrate. To control heterogeneous collisions, we varied the He addition rate at fixed chamber pressure and the chamber pressure at fixed Ar/He ratio in an inductively coupled Ar/He plasma source. Throughout the experiments, we maintained an electron density in the bulk plasma and plasma potential as a constant value by adjusting the RF power and applying an additional DC bias to eliminate any disturbances caused by the plasma. Our findings revealed that the addition of He enhances the Ar ion flux, despite a decrease in the Ar ion density at the plasma-sheath boundary due to the presence of He ions. Moreover, we found that this enhancement becomes more prominent with increasing pressure at a fixed He addition rate. These results suggest that the heterogeneous charge transfer collision between Ar atoms and He ions in the sheath region creates additional Ar ions, ultimately leading to an increased Ar ion flux on the substrate. This finding highlights the potential of utilizing heterogeneous charge transfer collisions to enhance ion flux in plasma processing, without the employment of additional equipment.

Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion Energy and Flux Controlled.

As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspect ratio SiO2 etching characteristics for various trench widths in a dual-frequency capacitively coupled plasma system with Ar/C4F8 gases. We established an individual control window of ion flux and energy by adjusting dual-frequency power sources and measuring the electron density and self-bias voltage. We separately varied the ion flux and energy with the same ratio from the reference condition and found that the increase in ion energy shows higher etching rate enhancement than that in the ion flux with the same increase ratio in a 200 nm pattern width. Based on a volume-averaged plasma model analysis, the weak contribution of the ion flux results from the increase in heavy radicals, which is inevitably accompanied with the increase in the ion flux and forms a fluorocarbon film, preventing etching. At the 60 nm pattern width, the etching stops at the reference condition and it remains despite increasing ion energy, which implies the surface charging-induced etching stops. The etching, however, slightly increased with the increasing ion flux from the reference condition, revealing the surface charge removal accompanied with conducting fluorocarbon film formation by heavy radicals. In addition, the entrance width of an amorphous carbon layer (ACL) mask enlarges with increasing ion energy, whereas it relatively remains constant with that of ion energy. These findings can be utilized to optimize the SiO2 etching process in high-aspect ratio etching applications.

Geometrical Doping at the Atomic Scale in Oxide Quantum Materials.

Chemical dopants enabling a plethora of emergent physical properties have been treated as randomly and uniformly distributed in the frame of a three-dimensional doped system. However, in nanostructured architectures, the location of dopants relative to the interface or boundary can greatly influence device performance. This observation suggests that chemical dopants need to be considered as discrete defects, meaning that geometric control of chemical dopants becomes a critical aspect as the physical size of materials scales down into the nanotechnology regime. Here we show that geometrical control of dopants at the atomic scale is another fundamental parameter in chemical doping, extending beyond the kind and amount of dopants conventionally used. The geometrical control of dopants extends the class of geometrically controlled structures into an unexplored dimensionality, between 2D and 3D. It is well understood that in the middle of the progressive dimensionality change from 3D to 2D, the electronic state of doped SrTiO3 is altered from a highly symmetric charged fluid to a charge disproportionated insulating state. Our results introduce a geometrical control of dopants, namely, geometrical doping, as another axis to provide a variety of emergent electronic states via tuning of the electronic properties of the solid state.

Root canal irrigation system using remotely generated high-power ultrasound.

Root canal treatment is performed to remove the bacteria proliferating in the root canals of a tooth. Many conventional root canal irrigation methods use an instrument inserted into the root canals. However, bacteria removal is often incomplete in the apical region of the root canal, and the treatment carries clinical risks, such as instrument fracture and extrusion of irrigation liquid through the canal apex. We here suggest a novel, remotely generated high-intensity ultrasound irrigation system that exhibits better irrigation performance and a reduced clinical risk. Our device employs powerful ultrasonic waves generated by a transducer placed outside a target tooth. The generated ultrasonic waves are guided to travel into the root canals. In the root canals of the target tooth, acoustic cavitation occurs, and vapor bubbles are created. The dynamic motions of vapor bubbles create remarkable cleaning effects. Using root canal models, we tested the cleaning performance of the proposed system and compared it with other conventional irrigation methods. The results revealed that biofilm in the apical region of the root canal models can be removed exclusively using the proposed system, thus demonstrating an improvement in cleaning performance. We also measured pressure at the apex of the root canals of an extracted tooth while operating the proposed system. Our system exhibited a smaller pressure compared to the syringe irrigation method, thus suggesting a reduced risk of apical extrusion of the irrigation liquid. Since the proposed system operates without inserting instruments into the root canal, it can clean multiple root canals in a tooth simultaneously with a single treatment. The proposed device would be a breakthrough in root canal treatment in terms of irrigation performance, clinical safety, and ease of treatment.

Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma.

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N2 gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O2 plasma ashing process in various N2/O2 mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.

Observation of prior light emission before arcing development in a low-temperature plasma with multiple snapshot analysis.

Arcing is a ubiquitous phenomenon and a crucial issue in high-voltage applied systems, especially low-temperature plasma (LTP) engineering. Although arcing in LTPs has attracted interest due to the severe damage it can cause, its underlying mechanism has yet to be fully understood. To elucidate the arcing mechanism, this study investigated various signals conventionally used to analyze arcing such as light emission, arcing current and voltage, and background plasma potential. As a result, we found that light emission occurs as early as 0.56 µs before arcing current initiation, which is a significant indicator of the explosive development of arcing as well as other signals. We introduce an arcing inducing probe (AIP) designed to localize arcing on the tip edge along with multiple snapshot analysis since arcing occurs randomly in space and time. Analysis reveals that the prior light emission consists of sheath and tip glows from the whole AIP sheath and the AIP tip edge, respectively. Formation mechanisms of these emissions based on multiple snapshot image analysis are discussed. This light emission before arcing current initiation provides a significant clue to understanding the arcing formation mechanism and represents a new indicator for forecasting arcing in LTPs.

Comparing cleaning effects of gas and vapor bubbles in ultrasonic fields.

The dynamic actions of cavitation bubbles in ultrasonic fields can clean surfaces. Gas and vapor cavitation bubbles exhibit different dynamic behaviors in ultrasonic fields, yet little attention has been given to the distinctive cleaning effects of gas and vapor bubbles. We present an experimental investigation of surface cleaning by gas and vapor bubbles in an ultrasonic field. Using high-speed videography, we found that the primary motions of gas and vapor bubbles responsible for surface cleaning differ. Our cleaning tests under different contamination conditions in terms of contaminant adhesion strength and surface wettability reveal that vapor and gas bubbles are more effective at removing contaminants with strong and weak adhesion, respectively, and furthermore that hydrophobic substrates are better cleaned by vapor bubbles. Our study not only provides a better physical understanding of the ultrasonic cleaning process, but also proposes novel techniques to improve ultrasonic cleaning by selectively employing gas and vapor bubbles depending on the characteristics of the surface to be cleaned.

Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors.

Ultralow-power logic devices are next-generation electronics in which their maximum efficacies are realized at minimum input power expenses. The integration of ferroelectric negative capacitors in the regular gate stacks of two-dimensional field-effect transistors addresses two intriguing challenges in today's electronics; short channel effects and high operating voltages. The complementary-metal-oxide-semiconductor-compatible Hf0.5Zr0.5O2 (HZO) is an excellent ferroelectric material crystallized in a noncentrosymmetric o-phase. The present work is the first to utilize pulsed laser deposition (PLD)-grown phase-pure ferroelectric HZO to achieve steep slope negative capacitance (NC) in field effect transistors (FETs). A dual-step growth strategy is designed to achieve phase-pure orthorhombic HZO on silicon and other conducting substrates. The room-temperature PLD-grown amorphous HZO is allowed to crystallize using rapid thermal annealing at 600 °C. The polycrystalline orthorhombic HZO is further integrated with atomic layer deposition-grown HfO2 to achieve a stable NC transition. The stack is further integrated into the molybdenum disulfide channel to achieve steep switching and a hysteresis-free operation of the resulting FETs. The subthreshold swings of the FETs are 20.42 and 26.16 mV/dec in forward and reverse bias conditions, respectively.

Impacts of chlorine chemistry and anthropogenic emissions on secondary pollutants in the Yangtze river delta region.

Multiphase chemistry of chlorine is coupled into a 3D regional air quality model (CMAQv5.0.1) to investigate the impacts on the atmospheric oxidation capacity, ozone (O3), as well as fine particulate matter (PM2.5) and its major components over the Yangtze River Delta (YRD) region. The developed model has significantly improved the simulated hydrochloric acid (HCl), particulate chloride (PCl), and hydroxyl (OH) and hydroperoxyl (HO2) radicals. O3 is enhanced in the high chlorine emission regions by up to 4% and depleted in the rest of the region. PM2.5 is enhanced by 2-6%, mostly due to the increases in PCl, ammonium, organic aerosols, and sulfate. Nitrate exhibits inhomogeneous variations, by up to 8% increase in Shanghai and 2-5% decrease in most of the domain. Radicals show different responses to the inclusion of the multiphase chlorine chemistry during the daytime and nighttime. Both OH and HO2 are increased throughout the day, while nitrate radicals (NO3) and organic peroxy radicals (RO2) show an opposite pattern during the daytime and nighttime. Higher HCl and PCl emissions can further enhance the atmospheric oxidation capacity, O3, and PM2.5. Therefore, the anthropogenic chlorine emission inventory must be carefully evaluated and constrained.