Ion beam modification of exchange coupling to fabricate patterned media.

For bit-patterned media, media with low remanent magnetization (M(r)) and high M(r) regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated the use of ion beam modification of media surface to define the low and high M(r) states using a medium that is at a low M(r) state to start with. The low M(r) state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy trilayer structured film. Local ion beam modification at 30 keV energy using Ga+ ions was used to create high M(r) regions. AFM and MFM observations indicated that patterned regions of low and high M(r) can be observed with ion beam irradiation. This technique is a potential method to achieve patterned media without the need of planarization techniques.

Hybrid metamaterial design and fabrication for terahertz resonance response enhancement.

Planar hybrid metamaterial with different split ring resonators (SRR) structure dimensions are fabricated on silicon substrates by femtosecond (fs) laser micro-lens array (MLA) lithography and lift-off process. The fabricated metamaterial structures consist of: (a) uniform metamaterial with 4 SRRs at same design and dimension as a unit cell and (b) hybrid metamaterial with 4 SRRs at same design but different dimensions as a unit cell. The electromagnetic field responses of these hybrid and single dimension metamaterial structures are characterized using a terahertz (THz) time-domain spectroscopy. Transmission spectra of these metamaterial show that a broader resonance peak is formed when 2 SRRs are close to each other. FDTD simulation proves that there is a strong mutual coupling between 2 SRRs besides a strong localized electric field at the split gap, which can enhance the electric field up to 364 times for tunable, broad band and high sensitivity THz sensing. Meanwhile, the strong coupling effect could lead to the formation of an additional resonance peak at approximately 0.2 THz in the THz spectra regime.

Nanophase change for data storage applications.

Phase change materials are widely used for date storage. The most widespread and important applications are rewritable optical disc and Phase Change Random Access Memory (PCRAM), which utilizes the light and electric induced phase change respectively. For decades, miniaturization has been the major driving force to increase the density. Now the working unit area of the current data storage media is in the order of nano-scale. On the nano-scale, extreme dimensional and nano-structural constraints and the large proportion of interfaces will cause the deviation of the phase change behavior from that of bulk. Hence an in-depth understanding of nanophase change and the related issues has become more and more important. Nanophase change can be defined as: phase change at the scale within nano range of 100 nm, which is size-dependent, interface-dominated and surrounding materials related. Nanophase change can be classified into two groups, thin film related and structure related. Film thickness and clapping materials are key factors for thin film type, while structure shape, size and surrounding materials are critical parameters for structure type. In this paper, the recent development of nanophase change is reviewed, including crystallization of small element at nano size, thickness dependence of crystallization, effect of clapping layer on the phase change of phase change thin film and so on. The applications of nanophase change technology on data storage is introduced, including optical recording such as super lattice like optical disc, initialization free disc, near field, super-RENS, dual layer, multi level, probe storage, and PCRAM including, superlattice-like structure, side edge structure, and line type structure. Future key research issues of nanophase change are also discussed.

Breaking the speed limits of phase-change memory.

Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.

Crystalline amorphous semiconductor superlattice.

A new class of superlattice, crystalline amorphous superlattice (CASL), by alternatively depositing two semiconductor materials, is proposed. CASL displays three states depending on the component materials' phase: both polycrystalline phases, both amorphous phases, and one polycrystalline phase while another amorphous phase. Using materials capable of reversible phase transition, CASL can demonstrate reversibility among three states. GeTe/Sb(2)Te(3) CASL has been synthesized and proved by x-ray reflectometry and TEM results. The reversible transition among three states induced by electrical and laser pulse was observed. The changes in the optical absorption edge, electrical resistivity, thermal conductivity, and crystallization temperature as a function of layer thickness are interpreted as quantum or nanoeffects. The unique properties of CASL enable the design of materials with specific properties.

Characterization of annealed, proton-exchanged optical waveguides in ZnO:LiNbO(3) crystal.

We report a systematic study of the annealing process in proton-exchanged ZnO:LiNbO(3) optical waveguides. A z-cut multimode waveguide was subjected to annealing for different durations of time. A two-stage change in index profiles with annealing time was observed, which was consistent with the change in the m-line spectrum. A power-law relationship was established to correlate the optical parameters with annealing time. Annealed Li(+) concentration in the waveguide was solved based on the thermal diffusion equation. An analytical function was used to model the annealed-index profile of single-mode, proton-exchanged waveguides. Good agreement between the theoretical analysis and the experimental result was obtained.

Fiber electronic speckle pattern interferometry and its applications in residual stress measurements.

A two-dimensional in-plane displacement-sensitive electronic speckle pattern interferometer has been developed. With a fiber coupler with one input and four outputs, two sets of dual-beam interferometric configurations in orthogonal directions are constructed to determine in-plane displacements completely. When a CCD camera with a zoom lens is located at an adequate distance from the specimen, a testing area ranging from 1.4 mm x 1.0 mm to 30.0 mm x 24.0 mm can be examined in quasi-real-time. Incorporated with the hole-drilling technique, it has currently been demonstrated in residual stress measurements. One application is for determining the residual stress of a thick cylinder consisting of two concentric circular tubes with interference fit. The other is for analyzing the residual stress distribution of a recordable optical compact disc. A simple approach to interpreting the values of residual stresses from the displacement contours is presented.

YAG Laser End and Side Pumped by a Laser Diode.

A combined end and side pump approach for a YAG laser pumped by a laser diode is proposed. The theoretical analysis of the total pump efficiency of the end and side pump module is presented. A laser-diode-pumped YAG laser is successfully demonstrated by use of this pump configuration. The experimental pump threshold is 81.2 mJ, the maximum output is 4.4 mJ, and the optical efficiency is approximately 3.1% for Q-switched operation of the YAG laser.

Effect of beam profile on the cross talk of land and groove recording.

Numerical analyses were conducted to simulate the effects of different Gaussian-weighted beams and disk geometries on the read-out signal cross talk of land and groove recording of phase-change optical disk systems. The optimized groove depth, which yields a minimum cross-talk noise, differs for different Gaussian-weighted beams and different track pitches. This beam profile dependence of the optimum groove depth is undesirable for practical application of this technique, because different optical systems may have different beam profiles at the lens aperture plane. It is found that this effect can be reduced to a certain extent by introduction of an appropriate shading band filter.

Coupled tandem optical parametric oscillator (OPO): an OPO within an OPO.

We have demonstrated, for the first time to our knowledge, a coupled tandem optical parametric oscillator (OPO) configuration in which a second ZnGeP(2) OPO is placed within the resonator of the first, KTiOPO(4), OPO. A significant enhancement in the overall cascaded efficiency of this OPO compared with standard two-stage OPO's was observed. With a multimode Nd:YAG laser, an overall optical-to-optical efficiency (from 1.06 microm to the mid IR) of 5.2% was obtained from operating only ~1.4 times above oscillation threshold. The measured overall slope efficiency was attractively high at 35%. With a single set of mirrors we obtained a broad wavelength-tuning range from 2.7 to 8 microm.

High-efficiency mid-infrared ZnGeP2 optical parametric oscillator in a multimode-pumped tandem optical parametric oscillator.

We demonstrate a high-efficiency ZnGeP(2) optical parametric oscillator (OPO) pumped by another KTP OPO in a multimode-pumped tandem OPO configuration. The maximum optical-to-optical and slope efficiencies were 32% and 42.5%, respectively. Our setup also provides tunable multiband radiation in the 2.03-2.32-microm range and the 2.9-6.2-microm range simultaneously.