[Optical Properties Investigation of p-Type ZnO Film Based on Doping by Diffusion].

The main purpose of this paper is to investigate the optical properties of p-type ZnO film based on P doping. ZnO film was grown by Atomic layer deposition (ALD) on InP subsrate in this experiment, and phosphorus diffused into ZnO lattice by annealing treatment at different temperature (500, 700 °C). The optical properties of samples were investigated by photoluminescence (PL) spectroscopy, which indicated that the annealing temperature is the important factor influencing the phosphorus diffusion doping. The low-temperature PL spectra of the sample which annealed at 700 °C for 1 h exhibited acceptor related emission peaks located at 3.351, 3.311, 3.246 and 3.177 eV, which were attributed to A °X, FA, DAP and DA-1LO, respectively. The acceptor binding energy is estimated to be about 122 meV, which is agreed with the theoretic values in phosphorus-doped ZnO films. In this paper, through thermal diffusion method to realize the p-type doped ZnO thin films, it solved the main problems which limited the development of ZnO based optoelectronic devices, and has an important significance for the development of the ZnO semiconductor materials and ZnO based photoelectric device.

[Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

[Preparation of MgxZn1-xO/Au/MgxZn1-xO multilayer transparent conductive film and studies of its photoelectric properties].

In the present paper, MgxZn1-xO and MgxZn1-xO/Au/MgxZn1-xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed. The surface, electrical, crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer, X-ray diffraction, photoluminescence and Hall effect, respectively. The influence of annealing temperature on the films was also investigated. The testing results indicated that the films with good c-axis orientation presented hexagonal wurtzite structure. With increasing Mg components, the optical band gap of ZnO thin film increased gradually. There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line. But the electrical properties of the films declined. In MgxZn1-xO/Au/MgxZn1-xO multilayer structure of thin film samples, the existence of Au interlining led to the poor optical properties of thin film, and the light transmittance in the ultraviolet region was 60%. Compared with MgxZn1-xO film, the electrical properties of MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film were improved, the resistivity and migration rate were significantly increased. In addition, high temperature annealing treatment could effectively improve the crystal quality of thin film and further improve the electrical characteristics of the samples. After the annealing treatment at 500 °C, migration rate of the film reached to 40.9 cm2 · 1 Vs(-1) while the resistivity was 0.0057 Ω · cm. Due to the rising of temperature, the crystal size increased from 25.1 to 32.4 nm to reduce the mobility of the film. Therefore, MgxZn1-xO/Au/MgxZn1-xO multilayer structure of transparent conductive film played an important role in promoting the ZnO transparent conductive film application in deep ultraviolet devices.

[Preparation of Mg(x)Zn(1-x)O nanofibers using PVP nanofibers as templates by atom layer deposition and their optical properties].

In the present paper, Mg(x)Zn(1-x)O nanofibers with different doping concentration were prepared by atom layer deposition (ALD) using polyvinyl pyrrolidone (PVP) nanofibers as template, which were synthesized by electrospinning. The influence of different Mg doping concentration on the structure and optical properties of composite nanofibers was investigated. The samples were characterized by field emission scanning electron microscopy (FESEM), ultraviolet visible (UV-Vis) absorption spectroscopy and photoluminescence (PL) spectra. The doping of Mg did not change the morphologies of ZnO nanofibers, the morphologies of all the samples were very similar while the diameter of Mg(x)Zn(1-x)O-PVP composite nanofibers became larger after doping. With the increase in the Mg doping concentration, the absorption edge shifted to larger energy side, revealing the band gap tenability of Mg(x)Zn(1-x)O nanofibers. Meanwhile, a significant blue shift of the UV emission peak from 377 to 362 nm was observed in PL spectra. Compared with ZnO-PVP composite nanofibers, the UV emission intensity of Mg(x)Zn(1-x)O-PVP composite nanofibers was much stronger. Component control Mg(x)Zn(1-x)O nanofibers can be synthesized by this method. The doping of Mg elements in ZnO can effectively improve the band gap of ZnO-PVP nanofibers and the intensity of UV emission.

Wickerhamomyces mori sp. nov., an anamorphic yeast species found in the guts of wood-boring insect larvae.

A novel anamorphic yeast species is described to accommodate three isolates recovered from the guts of three different wood-boring insect larvae collected in Henan, central China. On the basis of sequence analyses of the D1/D2 domains of the large-subunit rRNA gene and the internal transcribed spacer regions, the three strains are assigned to a novel species of the genus Wickerhamomyces, although the formation of ascospores was not observed. These strains also exhibited a number of distinct morphological and physiological characteristics that clearly differentiated them from Wickerhamomyces mucosus, Candida odintsovae and Wickerhamomyces rabaulensis, the most closely related species. In view of the phenotypic differences and unique rRNA gene sequences, we consider that these three isolates represent a novel species of the genus Wickerhamomyces, Wickerhamomyces mori sp. nov. The type strain is NYNU 1216(T) ( = CICC 1983(T)  = CBS 12678(T)).

Multi-gene phylogeny and taxonomy of the genus Bannoa with the addition of three new species from central China.

The genus Bannoa is a small group of ballistoconidium-forming yeasts in the family Erythrobasidiaceae (Cystobasidiomycetes). Prior to this study, seven species belonging to this genus have been described and published. In this study, phylogenetic analyzes of Bannoa based on the combined sequences of the small ribosomal subunit (SSU) rRNA gene, the internal transcribed spacer (ITS) regions, the D1/D2 domains of the large subunit rRNA gene (LSU) and the translation elongation factor 1-α gene (TEF1-α) were conducted. Three new species, namely B. ellipsoidea, B. foliicola, and B. pseudofoliicola, were delimited and proposed based on morphological and molecular evidence. B. ellipsoidea was found to be closely related to the type strains of B. guamensis, B. hahajimensis, and B. tropicalis, but with 0.7-0.9% divergence (4-5 substitutions) in the LSU D1/D2 domains and 3.7-4.1% divergence (19-23 substitutions and one-two gaps) in the ITS regions. B. foliicola was found to belong to the same clade as B. pseudofoliicola from which it differed by 0.4% divergence (two substitutions) in the LSU D1/D2 domains and 2.3% divergence (13 substitutions) in the ITS regions. The distinguishing morphological characteristics of the three new species, with respect to closely related taxa, are discussed. The identification of these new taxa significantly increases the number of Bannoa that have been described on the surface of plant leaves. Additionally, a key for the identification of Bannoa species is provided.