Mixed-Valence Conductors from Ni Bis(diselenolene) Complexes with a Thiazoline Backbone.

Highly conducting, mixed-valence, multi-component nickel bis(diselenolene) salts were obtained by electrocrystallization of the monoanionic species [Ni(Me-thiazds)2]-1 (Me-thiazds: N-methyl-1,3-thiazoline-2-thione-4,5-diselenolate), with 1:2 and 1:3 stoichiometries depending of the counter ion used (Et4N+ and nBu4N+ vs Ph4P+, respectively). This behavior strongly differs from that of the corresponding monoanionic dithiolene complexes whose oxidation afforded the single component neutral species. This provides additional rare examples of mixed-valence conducting salts of nickel diselenolene complexes, only known in two examples with the dsit (1,3-dithiole-2-thione-4,5-diselenolate) and dsise (1,3-dithiole-2-selone-4,5-diselenolate) ligands. The mixed-valence salts form highly dimerized or trimerized bi- and trimetallic units, rarely seen with such nickel complexes. Transport measurements under a high pressure (up to 10 GPa) and band structure calculations confirm the semiconducting character of [Ph4P][Ni(Me-thiazds)2]3 and the quasi metallic character of [Et4N][Ni(Me-thiazds)2]2 and [NBu4]x[Ni(Me-thiazds)2]2 salts (0 < x < 1).

Introducing Selenium in Single-Component Molecular Conductors Based on Nickel Bis(dithiolene) Complexes.

Two selenated analogues of the all-sulfur single-component molecular conductor [Ni(Et-thiazdt)2] (Et-thiazdt = N-ethylthiazoline-2-thione-4,5-dithiolate) have been prepared from their precursor radical-anion complexes. Replacement of the thione by a selenone moiety gives the neutral [Ni(Et-thiazSedt)2] complex. It adopts an unprecedented solid-state organization (for neutral nickel complexes), with the formation of perfectly eclipsed dimers and very short intermolecular Se···Se contacts (81% of the van der Waals contact distance). Limited interactions between dimers leads to a large semiconducting gap and low conductivity (σRT = 1.7 × 10-5 S cm-1). On the other hand, going from the neutral [Ni(Et-thiazdt)2] dithiolene complex to the corresponding [Ni(Et-thiazds)2] diselenolene complex gives rise to a more conventional layered structure built out of uniform stacks of the diselenolene complexes, different, however, from the all-sulfur analogue [Ni(Et-thiazdt)2]. Band structure calculations show an essentially 1D electronic structure with large band dispersion and a small HOMO-LUMO gap. Under high pressures (up to 19 GPa), the conductivity increases by 4 orders of magnitude and the activation energy is decreased from 120 meV to only 13 meV, with an abrupt change observed around 10 GPa, suggesting a structural phase transition under pressure.

Magnetic Molecular Conductors Based on Bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and the Tris(chlorocyananilato)ferrate(III) Complex.

Electrocrystallization of the bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) organic donor in the presence of the [Fe(ClCNAn)3]3- tris(chlorocyananilato)ferrate(III) paramagnetic anion in different stoichiometric ratios and solvent mixtures afforded two different hybrid systems formulated as [BEDT-TTF]4[Fe(ClCNAn)3]·3H2O (1) and [BEDT-TTF]5[Fe(ClCNAn)3]2·2CH3CN (2) (An = anilato). Compounds 1 and 2 present unusual structures without the typical segregated organic and inorganic layers, where layers of 1 are formed by Λ and Δ enantiomers of the anionic paramagnetic complex together with mixed-valence BEDT-TTF tetramers, while layers of 2 are formed by Λ and Δ enantiomers of the paramagnetic complex together with dicationic BEDT-TTF dimers and monomers. Compounds 1 and 2 show semiconducting behaviors with room-temperature conductivities of ca. 6 × 10-3 S cm-1 (ambient pressure) and 1 × 10-3 S cm-1 (under applied pressure of 12.1 GPa), respectively, due to strong dimerization between the donors. Magnetic measurements performed on compound 1 indicate weak antiferromagnetic coupling between high-spin FeIII (SFe = 5/2) and mixed-valence radical cation diyads (BEDT-TTF)2+ (Srad = 1/2) mediated by the anilate ligands, together with an important Pauli paramagnetism typical for conducting systems.

High Pressure Crystal Structure and Electrical Properties of a Single Component Molecular Crystal [Ni(dddt)2] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate).

Single-component molecular conductors form an important class of materials showing exotic quantum phenomena, owing to the range of behavior they exhibit under physical stimuli. We report the effect of high pressure on the electrical properties and crystal structure of the single-component crystal [Ni(dddt)2] (where dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate). The system is isoelectronic and isostructural with [Pd(dddt)2], which is the first example of a single-component molecular crystal that exhibits nodal line semimetallic behavior under high pressure. Systematic high pressure four-probe electrical resistivity measurements were performed up to 21.6 GPa, using a Diamond Anvil Cell (DAC), and high pressure single crystal synchrotron X-ray diffraction was performed up to 11.2 GPa. We found that [Ni(dddt)2] initially exhibits a decrease of resistivity upon increasing pressure but, unlike [Pd(dddt)2], it shows pressure-independent semiconductivity above 9.5 GPa. This correlates with decreasing changes in the unit cell parameters and intermolecular interactions, most notably the π-π stacking distance within chains of [Ni(dddt)2] molecules. Using first-principles density functional theory (DFT) calculations, based on the experimentally-determined crystal structures, we confirm that the band gap decreases with increasing pressure. Thus, we have been able to rationalize the electrical behavior of [Ni(dddt)2] in the pressure-dependent regime, and suggest possible explanations for its pressure-independent behavior at higher pressures.

Role of the Open-Shell Character on the Pressure-Induced Conductivity of an Organic Donor-Acceptor Radical Dyad.

Single-component conductors based on neutral organic radicals have received a lot of attention due to the possibility that the unpaired electron can serve as a charge carrier without the need of a previous doping process. Although most of these systems are based on delocalized planar radicals, we present here a nonplanar and spin localized radical based on a tetrathiafulvalene (TTF) moiety, linked to a perchlorotriphenylmethyl (PTM) radical by a conjugated bridge, which exhibits a semiconducting behavior upon application of high pressure. The synthesis, electronic properties, and crystal structure of this neutral radical TTF-Ph-PTM derivative (1) are reported and implications of its crystalline structure on its electrical properties are discussed. On the other hand, the non-radical derivative (2), which is isostructural with the radical 1, shows an insulating behavior at all measured pressures. The different electronic structures of these two isostructural systems have a direct influence on the conducting properties, as demonstrated by band structure DFT calculations.

Emergence of the Dirac Electron System in a Single-Component Molecular Conductor under High Pressure.

Single-component molecular conductors can provide a variety of electronic states. We demonstrate here that the Dirac electron system emerges in a single-component molecular conductor under high pressure. First-principles density functional theory calculations revealed that Dirac cones are formed in the single-component molecular conductor [Pd(dddt)2] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate), which shows temperature-independent resistivity (zero-gap behavior) at 12.6 GPa. The Dirac cone formation in [Pd(dddt)2] can be understood by a tight-binding model. The Dirac points originate from the HOMO and LUMO bands, each of which is associated with different molecular layers. Overlap of these two bands provides a closed intersection at the Fermi level (Fermi line) if there is no HOMO-LUMO coupling. Two-step HOMO-LUMO couplings remove the degeneracy on the Fermi line, resulting in gap formation. The Dirac cones emerge at the points where the Fermi line intersects with a line on which the HOMO-LUMO coupling is zero.

Pressure-Induced Conductivity in a Neutral Nonplanar Spin-Localized Radical.

There is a growing interest in the development of single-component molecular conductors based on neutral organic radicals that are mainly formed by delocalized planar radicals, such as phenalenyl or thiazolyl radicals. However, there are no examples of systems based on nonplanar and spin-localized C-centered radicals exhibiting electrical conductivity due to their large Coulomb energy (U) repulsion and narrow electronic bandwidth (W) that give rise to a Mott insulator behavior. Here we present a new type of nonplanar neutral radical conductor attained by linking a tetrathiafulvalene (TTF) donor unit to a neutral polychlorotriphenylmethyl radical (PTM) with the important feature that the TTF unit enhances the overlap between the radical molecules as a consequence of short intermolecular S···S interactions. This system becomes semiconducting upon the application of high pressure thanks to increased electronic bandwidth and charge reorganization opening the way to develop a new family of neutral radical conductors.

A single-component molecular superconductor.

The pressure dependence of the resistivities of a single-component molecular conductor, [Ni(hfdt)2] (hfdt = bis(trifluoromethyl)tetrathiafulvalenedithiolate) with semiconducting properties at ambient pressure was examined. The four-probe resistivity measurements were performed up to ∼10 GPa using a diamond anvil cell. The low-temperature insulating phase was suppressed above 7.5 GPa and the resistivity dropped, indicating the superconducting transition occurred around 7.5-8.7 GPa with a maximum Tc (onset temperature) of 5.5 K. The high-pressure crystal and electronic band structures were derived by the first-principle calculations at 6-11 GPa. The crystal was found to retain the semiconducting band structure up to 6 GPa. But the electron and hole Fermi surfaces appear at 8 GPa. These results of the calculations agree well with the observation that the pressure-induced superconducting phase of [Ni(hfdt)2] appeared just above the critical pressure where the low-temperature insulating phase was suppressed.

Mixed-ligand, radical, gold bis(dithiolene) complexes: from single-component conductors to controllable NIR-II absorbers.

Neutral radical bis(dithiolene) gold complexes [Au(dt)2]˙ are known to exhibit a strong absorption in the 1400-2000 nm NIR absorption range. Here, we demonstrate that the NIR signature of mixed-ligand bis(dithiolene) gold complexes [Au(dtA)(dtD)]˙ associating two different dithiolene, dtA and dtD, is found at higher energy, out of the range of the homoleptic analogs [Au(dtA)2]˙ and [Au(dtD)2]˙, in the looked-after NIR-II 1000-1400 nm absorption range. An efficient synthetic approach towards precursor mixed-ligand monoanionic gold bis(dithiolene) complexes [Au(dtA)(dtD)]-1 is reported. Using this strategy, no symmetrical complexes are formed and, upon electrocrystallization, no scrambling was observed in solution, allowing for the isolation of radical gold bis(dithiolene) complex such as [Au(bdt)(Et-thiazdt)]˙ (bdt: benzene-1,2-dithiolate; Et-thiazdt: N-ethyl-thiazoline-2-thione-3,4-dithiolate), which behaves as a single-component conductor. It is shown from theoretical calculations that the spin polarization induced by electron repulsions leads to a strong localization of the spin-orbitals, and provides a sound basis to understand, (i) the different ligand-based oxidation potentials, (ii) the NIR optical absorption at notably higher energies and (iii) the larger potential difference of the two redox processes than in the parent symmetric complexes. The solid-state properties of the radical complex [Au(bdt)(Et-thiazdt)]˙ are the consequence of a strongly 1D electronic structure with weakly dimerized chains and electronic localization favoring a semiconducting behavior, stable under pressures up to 18.2 GPa. Altogether, the versatility of the preparation method of [Au(dtA)(dtD)]-1 salts opens the route for a wide library of different mixed-ligand radical complexes [Au(dtA)(dtD)]˙ with simultaneously an adaptable absorption in the NIR-II range and the rich structural chemistry of single-component conductors.

Emergence of flat bands and ferromagnetic fluctuations via orbital-selective electron correlations in Mn-based kagome metal.

Kagome lattice has been actively studied for the possible realization of frustration-induced two-dimensional flat bands and a number of correlation-induced phases. Currently, the search for kagome systems with a nearly dispersionless flat band close to the Fermi level is ongoing. Here, by combining theoretical and experimental tools, we present Sc3Mn3Al7Si5 as a novel realization of correlation-induced almost-flat bands in the kagome lattice in the vicinity of the Fermi level. Our magnetic susceptibility, 27Al nuclear magnetic resonance, transport, and optical conductivity measurements provide signatures of a correlated metallic phase with tantalizing ferromagnetic instability. Our dynamical mean-field calculations suggest that such ferromagnetic instability observed originates from the formation of nearly flat dispersions close to the Fermi level, where electron correlations induce strong orbital-selective renormalization and manifestation of the kagome-frustrated bands. In addition, a significant negative magnetoresistance signal is observed, which can be attributed to the suppression of flat-band-induced ferromagnetic fluctuation, which further supports the formation of flat bands in this compound. These findings broaden a new prospect to harness correlated topological phases via multiorbital correlations in 3d-based kagome systems.

Lattice distortion stabilizes the photoinduced metallic phase in the charge-ordered organic salts (BEDT-TTF)3X2 (X=ReO4, ClO4).

Photoinduced effects caused by intramolecular excitation were investigated by simultaneous optical and transport measurement in two charge-ordered organic salts, (BEDT-TTF)3X2 (X=ReO4, ClO4) [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene]. Although the two salts have the same molecular (average) charge and arrangement, they showed different photoinduced effects. A photoinduced insulator-to-metal phase transition with a metastable charge order-melting state was observed in the ReO4 salt where the charge ordered state is associated with the lattice distortion. On the other hand, no photoinduced insulator-to-metal phase transition was noted in the ClO4 salt where the charge ordered state is not accompanied by the lattice distortion. This comparative study suggested that the lattice distortion plays a key role in the stabilization of the photoinduced phase.

A highly conducting mixed-valence nickel bis(dithiolene) salt [Et4N][Ni(Me-thiazSe-dt)2]2 with selone substitution.

The prototypical [Ni(dmit)2] complex (dmit: 1,3-dithiole-2-thione-4,5-dithiolate) is modified here by combining the N-R substitution found in [Ni(R-thiazdt)2] complexes (R-thiazdt: N-alkyl-thiazoline-2-thione-4,5-dithiolate) and the selone substitution found in [Ni(dmiSe)2] complex (dmiSe: 1,3-dithiole-2-selone-4,5-dithiolate) to give a novel N-methyl substituted, radical anionic complex formulated as [Ni(Me-thiazSe-dt)2]1- (Me-thiazSe-dt: N-methyl-thiazoline-2-selone-4,5-dithiolate). Both this anionic complex and its mixed-valence Et4N+ salt crystallize with a rare cis arrangement of the two dithiolene ligands around the Ni atom. In the 1 : 2 [Et4N][Ni(Me-thiazSe-dt)2]2 salt, the complexes organize into dimerized chains well isolated from each other, giving the salt a strong one-dimensional character. It shows however a high RT conductivity of 4.6 S cm-1 and small activation energy of 33 meV, indicating a possible Mott insulator behavior, which is not suppressed under pressures up to 10 GPa.

Single-component molecular conductor [Cu(dmdt)2] with three-dimensionally arranged magnetic moments exhibiting a coupled electric and magnetic transition.

Crystals of the single-component molecular conductor [Cu(dmdt)(2)] (dmdt = dimethyltetrathiafulvalenedithiolate) were prepared as a molecular system, with three-dimensionally arranged magnetic moments embedded in "sea" of π conduction electrons. [Cu(dmdt)(2)] had fairly large room-temperature conductivity (110 S cm(-1)) and exhibited weakly metallic behavior near room temperature. Below 265 K, the resistivity (R) increased very slowly with decreasing temperature and then increased rapidly, indicating a transition from a highly conducting state to an insulating state near 95 K. The magnetic susceptibility showed Curie-Weiss behavior at 100-300 K (C = 0.375 emu/mol, Θ = 180 K). The Curie constant and the high-temperature resistivity behavior indicate that conduction electrons and three-dimensionally arranged magnetic moments coexist in the crystal. The ESR intensity increased down to about 95 K. The ESR signal was broadened and decreased abruptly near 95 K, suggesting that electric and antiferromagnetic transitions occurred simultaneously near 95 K. The crystal structure was determined down to 13 K. To examine the stability of the twisted conformation of Cu complex with dithiolate ligands, the dihedral angle dependence of the conformational energy of an isolated M(L)(2)(n-) molecule was calculated, which revealed the dihedral angle dependence on the ligand (L) and the oxidation state of the molecule (n). High-pressure four-probe resistivity measurements were performed at 3.3-9.3 GPa using a diamond anvil cell. The small resistivity increase observed at 3.3 GPa below 60 K suggested that the insulating transition observed at ambient pressure near 95 K was essentially suppressed at 3.3 GPa. The intermolecular magnetic interactions were examined on the basis of simple mean field theory of antiferromagnetic transition and the calculated intermolecular overlap integrals of the singly occupied molecular orbital (SOMO) of Cu(dmdt)(2).

Anomalous dielectric behavior and thermal motion of water molecules confined in channels of porous coordination polymer crystals.

Guest water molecules confined in channels of porous coordination polymer crystals [Ln(2)Cu(3)(IDA)(6)]·nH(2)O (Ln = La, Nd, Sm, Gd, Ho, Er; IDA = [NH(CH(2)COO)(2)](2-); n ≈ 9) exhibited large dielectric constants (ε) and antiferroelectric behaviors at high temperatures (e.g., ε(Sm) ≈ 1300 at 400 K). In addition, plots of the temperature dependence of ε showed broad peaks at ∼170 K, below which ε became very small. These puzzling temperature dependences of ε are consistent with the results of molecular dynamics simulations, suggesting the "freezing of thermal motion" of water molecules at ∼170 K.

Metallization of the single component molecular semiconductor [Ni(ptdt)2] under very high pressure.

The four-probe electrical resistivity measurements on a single-component molecular semiconductor [Ni(ptdt)(2)] (Ni(S(8)C(9)H(6))(2)) was performed up to 20.7 GPa by using a diamond anvil cell. A newly improved method was employed to reduce the effect of uniaxial pressure. The semiconducting behavior persisted up to 17.9 GPa. The pressure-induced metallization began to appear at 18.9 GPa, and the complete metallic behavior down to 1 K was observed at 19.9 GPa.

Electrical properties of new organic conductor (BEST)(2)InBr(4) [BEST = bis(ethylenediseleno)tetrathiafulvalene] up to 10.8 GPa and antiferromagnetic transition of (BEST)(2)FeBr(4).

A new organic conductor, (BEST)(2)InBr(4), with alternating donor layer arrangement has been synthesized, and the electrical properties have been investigated up to 10.8 GPa. The temperature dependence of the high-pressure resistivity shows a complicated metal-semiconductor transition behavior. The room temperature resistivity decreases with pressure up to 8.6 GPa but increases at higher pressures. The magnetic susceptibility of an isostructural (BEST)(2)FeBr(4) salt shows an antiferromagnetic transition at 4.4 K, which is suppressed with increasing magnetic field.

Structural anomalies associated with antiferromagnetic transition of single-component molecular metal [Au(tmdt)2].

The crystal structure of the single-component molecular metal [Au(tmdt)(2)] was examined by performing powder X-ray diffraction experiments in the temperature range of 9-300 K using a synchrotron radiation source installed at SPring-8. The structural anomalies associated with antiferromagnetic transition were observed around the transition temperature (T(N) = 110 K). The continuous temperature dependence of the unit cell volume and the discontinuous change in the thermal expansion coefficient at T(N) suggested that the antiferromagnetic transition of [Au(tmdt)(2)] is a second-order transition. Au(tmdt)(2) molecules are closely packed in the (021) plane with two-dimensional lattice vectors of a and l (= 2a + b + 2c). The shortest intermolecular S...S distance along the a axis shows a sharp decrease at around T(N), while the temperature dependence of l exhibits a characteristic peak in the same temperature region. A distinct structure anomaly was not observed along the direction perpendicular to the (021) plane. These results suggest that the molecular arrangement in only the (021) plane changes significantly at T(N). Thus, the intermolecular spacing shows anomalous temperature dependence at around T(N) only along that direction where the neighboring tmdt ligands have opposite spins in the antiferromagnetic spin structure model recently derived from ab initio band structure calculations. The results of single-crystal four-probe resistance measurements on extremely small crystals (approximately 25 microm) did not show a distinct resistance anomaly at T(N). The resistance anomaly associated with antiferromagnetic transition, if at all present, is very small. The Au-S bond length decreases sharply at around 110 K; this is consistent with the proposed antiferromagnetic spin distribution model, where the left and right ligands of the same molecule possess opposite spin polarizations. The tendency of the Au-S bond to elongate with decreasing temperature is ascribed to the small energy gap between the pd sigma(-) (or SOMO + 1) and the asym-Lpi(d) (or SOMO) states of the Au(tmdt)(2) molecule.

Electrical resistivity of tetramethyltetratelluronaphtalene crystal at very high pressures - examination of the condition of metallization of pi molecular crystal.

Four-probe resistivity measurements were performed on the TMTTeN crystal by using a diamond anvil high-pressure cell up to 30 GPa. The crystal could not be metallized though the room-temperature resistivity decreased to a very small value (1.5 x 10-3 Omega cm). Although single-component molecular metals are composed of molecules, the pressure-induced metallization of a single-component pi molecular crystal while maintaining the initial molecular structure appears to be very difficult.

Evidence of the chemical uniaxial strain effect on electrical conductivity in the spin-crossover conducting molecular system: [Fe(III)(qnal)2][Pd(dmit)2]5.acetone.

A novel spin-crossover molecular conductor, [Fe(qnal)2][Pd(dmit)2]5.acetone, was prepared and characterized. The crystal structural analyses of both the low- and high-temperature phases revealed that the supramolecular pi-pi interactions between the spin-crossover Fe(qnal)2 cations as well as the cation contraction play an important role in the uniaxial lattice deformation which will modulate the electrical conductivity of the conducting Pd(dmit)2 layer.

A unique new multiband molecular conductor: [BDTA][Ni(dmit)2]2.

A new molecular conducting material, [BDTA][Ni(dmit)2]2, with a novel multiband electronic structure has been prepared by simple mixing of precursor salts of the components.