Cascade laser optimization for 3H4 → 3H5 and 3F4 → 3H6 sequent transitions in Tm3+-doped materials.

We study a cascade laser scheme involving the 3H4 → 3H5 and 3F4 → 3H6 consecutive transitions in Tm3+-doped materials as a promising technique to favor laser emission at 2.3 µm. We examine the conditions in terms of the Tm3+ doping levels for which the cascade laser is beneficial or not. For this, Tm:LiYF4 lasers based on crystals with several doping levels in the range of 2.5 - 6 at.% with and without cascade laser are studied. For low doping of 2.5 at.% Tm3+, adding the laser emission at 1.9 µm allows to double the output power at 2.3 µm, whereas for high doping of 6 at.%, allowing the laser to operate at 1.9 µm totally suppresses the laser emission at 2.3 µm. An analytical model is developed and confronted with experimental results to predict this doping-dependent phenomenon and forecast the potential benefits. This study of cascade laser emission on the 3H4→ 3H5 and 3F4→ 3H6 transitions versus the Tm3+ doping level is finally extended to other well-known Tm3+-doped laser materials.

Excited-state absorption and upconversion pumping of Tm3+-doped potassium lutetium double tungstate.

We report on a bulk thulium laser operating on the 3H4 → 3H5 transition with pure upconversion pumping at 1064 nm by an ytterbium fiber laser (addressing the 3F4 → 3F2,3 excited-state absorption (ESA) transition of Tm3+ ions) generating 433 mW at 2291 nm with a slope efficiency of 7.4% / 33.2% vs. the incident / absorbed pump power, respectively, and linear laser polarization representing the highest output power ever extracted from any bulk 2.3 µm thulium laser with upconversion pumping. As a gain material, a Tm3+-doped potassium lutetium double tungstate crystal is employed. The polarized ESA spectra of this material in the near-infrared are measured by the pump-probe method. The possible benefits of dual-wavelength pumping at 0.79 and 1.06 µm are also explored, indicating a positive effect of co-pumping at 0.79 µm on reducing the threshold pump power for upconversion pumping.

Tm3+ and Ho3+ colasing in in-band pumped waveguides fabricated by femtosecond laser writing.

We report on the first, to the best of our knowledge, in-band pumped Tm3+,Ho3+ codoped waveguide (WG) laser. A depressed-index surface channel WG (type III) with a 50 µm half-ring cladding is fabricated in a 5 at. % Tm3+, 0.5 at. % Ho3+:KLu(WO4)2 crystal by femtosecond pulse direct laser writing. Under in-band pumping by a 1679 nm Er Raman fiber laser, Tm3+ and Ho3+ colasing is observed in the WG and explained by bidirectional energy transfer. The maximum total output power at ∼1942nm(Tm3+) and 2059 nm (Ho3+) is 448 mW with a slope efficiencyM of 40.6%, which is a record high for this type of WG lasers. The maximum output power of the Ho laser reaches 144 mW.

Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition.

Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN deposition time. Furthermore, the evolution of the contact angle of a droplet of water located on the surface of these GaN epitaxial layers with the deposition time was investigated. We observe a transition from the hydrophilic regime to the hydrophobic regime for deposition times longer than 15 min. The observed dependence of GaN hydrophobicity on its degree of porosity is discussed and explained in the framework of the Cassie-Baxter model.

Transition of pulsed operation from Q-switching to continuous-wave mode-locking in a Yb:KLuW waveguide laser.

We report on the diverse pulsed operation regimes of a femtosecond-laser-written Yb:KLuW channel waveguide laser emitting near 1040 nm. By the precise position tuning of a carbon-nanotube-coated saturable absorber (SA) mirror, the transition of the pulsed operation from Q-switching, Q-switched mode-locking and finally sub-GHz continuous-wave mode-locking are obtained based on the interplay of dispersion and mode area control. The Q-switched pulses exhibit typical fast SA Q-switched pulse characteristics depending on absorbed pump powers. In the Q-switched mode-locking, amplitude modulations of the mode-locked pulses on the Q-switched envelope are observed. The radio-frequency spectrum represents the coexistence of Q-switching and mode-locking signals. In the purely mode-locked operation, the waveguide laser generates 2.05-ps pulses at 0.5 GHz.

Laser operation of cleaved single-crystal plates and films of Tm:KY(MoO4)2.

We report on the crystal growth, spectroscopy and first laser operation of a novel double molybdate compound - Tm:KY(MoO4)2. This orthorhombic (sp. gr. Pbna) crystal exhibits strong anisotropy of the spectroscopic properties due to its layered structure. The maximum stimulated emission cross-section for the 3F4 → 3H6 transition is 2.70×10-20 cm2 at 1856nm with a bandwidth of >110 nm (for E || b). The lifetime of the 3F4 state is 2.29 ms. Crystalline films and plates (thickness down to 70 µm) of high optical quality are obtained by mechanical cleavage along the (100) plane. Continuous-wave diode-pumped laser operation is achieved in such thin films and plates yielding a maximum output power of 0.88 W at ∼1.9 µm with a slope efficiency of 65.8% and a linearly polarized laser output. Vibronic lasing is demonstrated at ∼2.06 µm. Tm:KY(MoO4)2 is promising for microchip and thin-disk lasers.

Spectroscopy and diode-pumped laser operation of transparent Tm:Lu3Al5O12 ceramics produced by solid-state sintering.

A transparent Tm:Lu3Al5O12 ceramic is fabricated by solid-state reactive sintering at 1830 °C for 30 h using commercial α-Al2O3 and Lu2O3/Tm2O3 powders and sintering aids - MgO and TEOS. The ceramic belongs to the cubic system and exhibits a close-packed structure (mean grain size: 21 µm). The in-line transmission at ∼1 µm is 82.6%, close to the theoretical limit. The spectroscopic properties of the ceramic are studied in detail. The maximum stimulated-emission cross-section is 2.37×10-21 cm2 at 1749nm and the radiative lifetime of the 3F4 state is about 10 ms. The modified Judd-Ofelt theory accounting for configuration interaction is applied to determine the transition probabilities of Tm3+, yielding the intensity parameters Ω2 = 2.507, Ω4 = 1.236, Ω6 = 1.340 [10-20 cm2] and α = 0.196×10-4 cm. The effect of excited configurations on lower-lying interconnected states with the same J quantum number is discussed. First laser operation is achieved under diode-pumping at 792 nm. A 4 at.% Tm:Lu3Al5O12 ceramic laser generated 3.12 W at 2022-2035nm with a slope efficiency of 60.2%. The ceramic is promising for multi-watt lasers at >2 µm.

Ultrafast laser inscribed waveguide lasers in Tm:CALGO with depressed-index cladding.

Depressed-index buried and surface channel waveguides (type III) are produced in a bulk 3.5 at.% Tm3+:CALGO crystal by femtosecond direct-laser-writing at kHz repetition rate. The waveguides are characterized by confocal microscopy and µ-Raman spectroscopy. Under in-band-pumping at 1679 nm (3H6 → 3F4 transition) by a Raman fiber laser, the buried channel waveguide laser with a circular cladding (diameter: 60 µm) generated a continuous-wave output power of 0.81 W at 1866-1947 nm with a slope efficiency of 71.2% (versus the absorbed pump power) and showed a laser threshold of 200 mW. The waveguide propagation losses were as low as 0.3 ± 0.2 dB/cm. The laser performance under in-band pumping was superior compared pumping at ∼800 nm (3H6 → 3H4 transition), i.e., the convetional pump wavelength. Vibronic laser emission from the WG laser above 2 µm is also achieved. The low-loss behavior, the broadband emission properties and good power scaling capabilities indicate the suitability of Tm3+:CALGO waveguides for mode-locked laser operation at ∼2 µm.

Low-loss fs-laser-written surface waveguide lasers at >2 µm in monoclinic Tm3+:MgWO4.

Surface channel waveguides (WGs) based on a half-ring (40-60-µm-diameter) depressed-index cladding (type III) geometry are fabricated in monoclinic Tm3+:MgWO4 by femtosecond (fs) laser writing at a repetition rate of 1 kHz. The WGs are characterized by confocal laser microscopy and µ-Raman spectroscopy. A Tm3+:MgWO4 WG laser generates 320 mW at ∼2.02µm with a slope efficiency of 64.4%. The WG emits a transverse single-mode and linear polarization (E||Nm). A remarkable low loss of <0.1dB/cm is measured for the WG. Vibronic laser emission at ∼2.08µm is also achieved.

Spectroscopy and high-power laser operation of a monoclinic Yb3+:MgWO4 crystal.

Monoclinic (wolframite-type) monotungstate crystals are promising for rare-earth doping. We report polarized room- and low-temperature spectroscopy and efficient high-power laser operation of such a ${{\rm Yb}^{3 + }}{:}\,{{\rm MgWO}_4}$Yb3+:MgWO4 crystal featuring high stimulated emission cross section (${\sigma _{\rm SE}}\; = \;{6}.{2}\; \times \;{{10}^{ - 20}}\;{{\rm cm}^2}$σSE=6.2×10-20cm2 at 1056.7 nm for light polarization ${\rm E}\;||\;{N_m}$E||Nm), large Stark splitting of the ground state (${765}\;{{\rm cm}^{ - 1}}$765cm-1), large gain bandwidth (26.1 nm for ${\rm E}\;||\;{N_g}$E||Ng), and strong Raman response (most intense mode at ${916}\;{{\rm cm}^{ - 1}}$916cm-1). A diode-pumped ${{\rm Yb}^{3 + }}{:}\,{{\rm MgWO}_4}$Yb3+:MgWO4 laser generated 18.2 W at ${\sim}{1056}\;{\rm nm}$∼1056nm with a slope efficiency of ${\sim}{89}\% $∼89% and a linearly polarized laser output.

"Mixed" Tm:Ca(Gd,Lu)AlO4 - a novel crystal for tunable and mode-locked 2 µm lasers.

We report on the crystal growth, spectroscopy characterization and first laser operation of a new tetragonal disordered "mixed" calcium aluminate crystal, Tm:Ca(Gd,Lu)AlO4. The introduction of Lu3+ leads to an additional inhomogeneous broadening of Tm3+ absorption and emission spectra compared to the well-known Tm:CaGdAlO4. The maximum stimulated-emission cross-section for the 3F4 → 3H6 Tm3+ transition is 0.91 × 10-20 cm2 at 1813 nm for σ-polarization, and the emission bandwidth is more than 200 nm. A continuous-wave diode-pumped Tm:Ca(Gd,Lu)AlO4 laser generates 1.82 W at 1945 nm with a slope efficiency of 29%. Under Ti:Sapphire laser pumping, a continuous tuning of the laser wavelength from 1836 to 2083 nm (tuning range: 247 nm) is demonstrated. The Tm:Ca(Gd,Lu)AlO4 crystal is promising for tunable/femtosecond lasers at ~2 µm.

Ytterbium calcium fluoride waveguide laser.

Calcium fluoride is a well-known material for optical components. It is also suited for doping with rare-earth ions, e.g., ytterbium ones. Yb:CaF2 is an efficient gain medium for high-power and ultrashort-pulse bulk lasers around 1 µm. We report on the first Yb:CaF2 planar waveguide laser. High-optical-quality single-crystalline waveguiding Yb:CaF2 thin films are grown on bulk CaF2 substrates by Liquid Phase Epitaxy. The spectroscopic study indicates the predominant coordination of isolated Yb3+ ions in trigonal oxygen-assisted sites, C3v(T2). The optical gain in Yb:CaF2 waveguide is demonstrated. A 1.4 at.% Yb:CaF2 planar waveguide laser generated 114 mW at 1037 nm with a slope efficiency of 12.9%. Yb:CaF2 films are promising for power-scalable waveguide mode-locked lasers and amplifiers.

Comparative study of Yb:KYW planar waveguide lasers Q-switched by direct- and evanescent-field interaction with carbon nanotubes.

Both direct- and evanescent-field interactions with carbon nanotubes (CNTs) are applied to achieve stable Q-switched operation of Yb:KYW planar waveguide lasers. The performance characteristics were investigated in a same cavity configuration and analyzed in detail in the following three cases, CNTs deposited onto end mirror (M-coating), output coupler (OC-coating) and top surface of the planar waveguide (WG-coating). Maximum output powers, repetition rates, and minimum pulse durations are 61 mW, 1103 kHz and 215 ns for OC-coating, 39 mW, 1052 kHz and 275 ns for WG-coating, and 26 mW, 1119 kHz and 217 ns for M-coating, respectively. From the calculation of the configuration-dependent stability range, the beam size and the electric field distribution in the Yb:KYW planar waveguide, it is confirmed that the evanescent-field interaction scheme makes stable Q-switching possible with much lower intensities at saturable absorber compared to the direct-field interaction scheme in the presented waveguide laser operation.

Fs-laser-written thulium waveguide lasers Q-switched by graphene and MoS2.

We report the generation of mid-infrared (~2 µm) high repetition rate (MHz) sub-100 ns pulses in buried thulium-doped monoclinic double tungstate crystalline waveguide lasers using two-dimensional saturable absorber materials, graphene and MoS2. The waveguide (propagation losses of ~1 dB/cm) was micro-fabricated by means of ultrafast femtosecond laser writing. In the continuous-wave regime, the waveguide laser generated 247 mW at 1849.6 nm with a slope efficiency of 48.7%. The laser operated at the fundamental transverse mode with a linearly polarized output. With graphene as a saturable absorber, the pulse characteristics were 88 ns / 18 nJ (duration / energy) at a repetition rate of 1.39 MHz. Even shorter pulses of 66 ns were achieved with MoS2. Graphene and MoS2 are therefore promising for high repetition rate nanosecond Q-switched infrared waveguide lasers.

Diamond saw dicing of thulium channel waveguide lasers in monoclinic crystalline films.

A surface channel waveguide (WG) laser is produced by diamond saw dicing of a 15 µm thick 10 at. % Tm:KY1-x-yGdxLuy(WO4)2 monoclinic double tungstate thin film grown by liquid phase epitaxy on an undoped KY(WO4)2 substrate. The WG propagation losses are 1.1±0.5 dB/cm. When pumped at 802 nm, laser operation is achieved with a maximum output power of 262 mW at 1833 nm with a record slope efficiency of 82.6% (versus the absorbed pump power) in a TE10 spatial mode (linear laser polarization, E‖Nm). Diamond saw dicing of double tungstate epitaxies is a promising technology for manufacturing WGs for sensing applications.

Femtosecond-laser-written Ho:KGd(WO4)2 waveguide laser at 2.1 µm.

We report on efficient laser operation of the first holmium monoclinic double tungstate waveguide laser fabricated by femtosecond direct laser writing. A depressed-index buried channel waveguide with a 60 µm diameter circular cladding was inscribed in 5 at.% Ho3+:KGd(WO4)2. It was characterized by confocal microscopy and µ-Raman and µ-luminescence spectroscopy, indicating well-preserved crystallinity of its core. Pumped by a thulium bulk laser, the holmium waveguide laser generated 212 mW at 2055 nm with a slope efficiency of 67.2%. The waveguide propagation losses were 0.94±0.2 dB/cm.

Tm:KY1-x-yGdxLuy(WO4)2 planar waveguide laser passively Q-switched by single-walled carbon nanotubes.

A Tm3+ monoclinic double tungstate planar waveguide laser is passively Q-switched (PQS) by a saturable absorber (SA) based on single-walled carbon nanotubes (SWCNTs) randomly oriented in a polymer film. The laser is based on a 18 µm-thick 5 at.% Tm:KY1-x-yGdxLuy(WO4)2 active layer grown on an undoped (010)-oriented KY(WO4)2 substrate by liquid phase epitaxy with determined propagation losses 0.7 ± 0.2 dB/cm. The PQS laser generated a maximum average output power of 45.6 mW at 1.8354 µm with a slope efficiency of 22.5%. Stable 83-ns-long laser pulses with an energy of 33 nJ were achieved at a repetition rate of 1.39 MHz. The use of SWCNTs as SA is promising for generation of sub-100 ns pulses in such waveguide lasers at ~2 µm.

Ho:KY(WO4)2 thin-disk laser passively Q-switched by a GaSb-based SESAM.

A Holmium thin-disk laser based on a 3 at.% Ho:KY(WO4)2 / KY(WO4)2 epitaxy and single-bounce pumping by a 1960 nm Tm-fiber laser is passively Q-switched with a GaSb-based quantum-well semiconductor saturable absorber mirror. It generates an average output power of 551 mW at 2056 nm with a slope efficiency of 44% (with respect to the absorbed pump power). The best pulse characteristics (energy and duration) are 4.1 µJ / 201 ns at a repetition rate of 135 kHz and the conversion efficiency with respect to the continuous-wave regime is as high as 93%.

Fs-laser-written erbium-doped double tungstate waveguide laser.

We report on the first erbium (Er3+) doped double tungstate waveguide laser. As a gain material, we studied a monoclinic Er3+:KLu(WO4)2 crystal. A depressed-index buried channel waveguide formed by a 60 µm-diameter circular cladding was fabricated by 3D femtosecond direct laser writing. The waveguide was characterized by confocal laser microscopy, µ-Raman and µ-luminescence mapping, confirming that the crystallinity of the core is preserved. The waveguide laser, diode pumped at 981 nm, generated 8.9 mW at 1533.6 nm with a slope efficiency of 20.9% in the continuous-wave regime. The laser polarization was linear (E || Nm). The laser threshold was at 93 mW of absorbed pump power.

Efficient diode-pumped Er:KLu(WO4)2 laser at ∼1.61 µm.

We report on an efficient diode-pumped continuous-wave erbium-doped monoclinic double tungstate laser. It is based on a 1 at. % Er3+:KLu(WO4)2 (Er:KLuW) crystal cut along the Ng optical indicatrix axis. The Er:KLuW microchip laser, diode pumped at 0.98 µm, generates 268 mW at 1.610 µm with a slope efficiency of 30%. The output is linearly polarized (E||Nm), and the laser beam is nearly diffraction limited (Mp,m2<1.1). Spectroscopic properties of Er3+ in KLuW are also presented. The stimulated-emission cross-section σSE is 0.46×10-20 cm2 at ∼1.609 µm for E||Nm. The microchip Er:KLuW laser outperforms the commercial Er,Yb:glass.