480†nm InGaN-based cyan laser diode grown on Si by interface engineering of active region.

InGaN-based long wavelength laser diodes (LDs) grown on Si are highly desirable for expanding the applications in laser display and lighting. Proper interface engineering of high In-content InGaN multi-quantum wells (MQWs) is urgently required for the epitaxial growth of InGaN-based long wavelength LD on Si, because the deteriorated interfaces and crystalline quality of InGaN MQWs can severely increase the photon scattering and further exacerbate the internal absorption loss of LDs, which prevents the lasing wavelength of InGaN-based LDs from extending. In this work, a significantly improved morphology and sharp interface of the InGaN active region are obtained by using a graded-compositional InGaN lower waveguide (LWG) capped with a 10-nm-thick Al0.1Ga0.9N layer. The V-pits density of the InGaN LWG was one order of magnitude reduction from 4.8 × 108 to 3.6 × 107 cm-2 along with the root-mean-square surface roughness decreasing from 0.3 to 0.1 nm. Therefore, a room-temperature electrically injected 480 nm InGaN-based cyan LD grown on Si under pulsed current operation was successfully achieved with a threshold current density of 18.3 kA/cm2.

Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs.

Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC light emitting diodes (LEDs). In this study, the degradation mechanism and impurity/defect behavior of UVC LEDs in relation to the hexagonal hillocks have been studied in detail. It was found that the early degradation of UVC LEDs is primarily caused by electron leakage. The prominent contribution of the hillock edges to the electron leakage is unambiguously evidenced by the transmission electron microscopy measurements, time-of-flight secondary ion mass spectrometry, and conductive atomic force microscopy. Dislocations bunching and segregation of impurities, including C, O, and Si, at the hillock edges are clearly observed, which facilitate the trap-assisted carrier tunneling in the multiple quantum wells and subsequent recombination in the p-AlGaN. This work sheds light on one possible degradation mechanism of AlGaN-based UVC LEDs.

Enhancement of Image Quality in LCD by Doping γ-Fe2O3 Nanoparticles and Reducing Friction Torque Difference.

Improving image sticking in liquid crystal display (LCD) has attracted tremendous interest because of its potential to enhance the quality of the display image. Here, we proposed a method to evaluate the residual direct current (DC) voltage by varying liquid crystal (LC) cell capacitance under the combined action of alternating current (AC) and DC signals. This method was then used to study the improvement of image sticking by doping γ-Fe2O3 nanoparticles into LC materials and adjusting the friction torque difference of the upper and lower substrates. Detailed analysis and comparison of residual characteristics for LC materials with different doping concentrations revealed that the LC material, added with 0.02 wt% γ-Fe2O3 nanoparticles, can absorb the majority of free ions stably, thereby reducing the residual DC voltage and extending the time to reach the saturated state. The physical properties of the LC materials were enhanced by the addition of a small amount of nanoparticles and the response time of doping 0.02 wt% γ-Fe2O3 nanoparticles was about 10% faster than that of pure LC. Furthermore, the lower absolute value of the friction torque difference between the upper and lower substrates contributed to the reduction of the residual DC voltage induced by ion adsorption in the LC cell under the same conditions. To promote the image quality of different display frames in the switching process, we added small amounts of the nanoparticles to the LC materials and controlled friction technology accurately to ensure the same torque. Both approaches were proven to be highly feasible.

Improvement of Image Sticking in Liquid Crystal Display Doped with γ-Fe2O3 Nanoparticles.

Image sticking in thin film transistor-liquid crystal displays (TFT-LCD) is related to the dielectric property of liquid crystal (LC) material. Low threshold value TFT LC materials have a weak stability and the free ions in them will be increased because of their own decomposition. In this study, the property of TFT LC material MAT-09-1284 doped with γ-Fe2O3 nanoparticles was investigated. The capacitances of parallel-aligned nematic LC cells and vertically aligned nematic LC cells with different doping concentrations were measured at different temperatures and frequencies. The dielectric constants perpendicular and parallel to long axis of the LC molecules ε⊥ and ε//, as well as the dielectric anisotropy Δε, were obtained. The dynamic responses and the direct current threshold voltages in parallel-aligned nematic LC cells for different doping concentrations were also measured. Although the dielectric anisotropy Δε decreased gradually with increasing temperature and frequency at the certain frequency and temperature in LC state for each concentration, the doping concentration of γ-Fe2O3 nanoparticles less than or equal to 0.145 wt % should be selected for maintaining dynamic response and decreasing free ions. This study has some guiding significance for improving the image sticking in TFT-LCD.