Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal-Organic Resist and Helium Ion Beam Lithography.

Field-emission devices are promising candidates to replace silicon fin field-effect transistors as next-generation nanoelectronic components. For these devices to be adopted, nanoscale field emitters with nanoscale gaps between them need to be fabricated, requiring the transfer of, for example, sub-10 nm patterns with a sub-20 nm pitch to substrates like silicon and tungsten. New resist materials must therefore be developed that exhibit the properties of sub-10 nm resolution and high dry etch resistance. A negative tone, metal-organic resist is presented here. It can be patterned to produce sub-10 nm features when exposed to helium ion beam lithography at line doses on the order of tens of picocoulombs per centimeter. The resist was used to create 5 nm wide, continuous, discrete lines spaced on a 16 nm pitch in silicon and 6 nm wide lines on an 18 nm pitch in tungsten, with line edge roughness of 3 nm. After the lithographic exposure, the resist demonstrates high resistance to silicon and tungsten dry etch conditions (SF6 and C4F8 plasma), allowing the pattern to be transferred to the underlying substrates. The resist's etch selectivity for silicon and tungsten was measured to be 6.2:1 and 5.6:1, respectively; this allowed 3 to 4 nm thick resist films to yield structures that were 21 and 19 nm tall, respectively, while both maintained a sub-10 nm width on a sub-20 nm pitch.

Use of Supramolecular Assemblies as Lithographic Resists.

A new resist material for electron beam lithography has been created that is based on a supramolecular assembly. Initial studies revealed that with this supramolecular approach, high-resolution structures can be written that show unprecedented selectivity when exposed to etching conditions involving plasmas.

Room temperature continuous wave operation of single-mode, edge-emitting photonic crystal Bragg lasers.

We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100microm wide and 550microm long on-chip devices. We also demonstrate the tuning of the lasing wavelength by changing the transverse lattice constant of the photonic crystal. This enables a fine wavelength tuning sensitivity (change of the lasing wavelength/change of the lattice constant) of 0.072. This dependence proves that the lasing mode is selected by the photonic crystal lattice.

Electrically-pumped, broad-area, single-mode photonic crystal lasers.

Planar broad-area single-mode lasers, with modal widths of the order of tens of microns, are technologically important for high-power applications and improved coupling efficiency into optical fibers. They may also find new areas of applications in on-chip integration with devices that are of similar size scales, such as for spectroscopy in microfluidic chambers or optical signal processing with micro-electromechanical systems. An outstanding challenge is that broad-area lasers often require external means of control, such as injection-locking or a frequency/spatial filter to obtain single-mode operation. In this paper, we propose and demonstrate effective index-guided, large-area, edge-emitting photonic crystal lasers driven by pulsed electrical current injection at the optical telecommunication wavelength of 1550 nm. By suitable design of the photonic crystal lattice, our lasers operate in a single mode with a 1/e(2) modal width of 25 microm and a length of 600 microm.

Electrically pumped edge-emitting photonic crystal lasers with angled facets.

We demonstrate electrically pumped large-area edge-emitting InGaAsP/InP two-dimensional photonic crystal lasers with angled facets at room temperature. The laser uses a weak index perturbation surface photonic crystal structure to control optical modes in the wafer plane. Measurements of the laser spectra show that the modal selection is due to satisfying the Bragg resonance conditions in both the longitudinal and the transverse directions. The lasing wavelength is tuned lithographically by changing photonic crystal lattice constants. We demonstrate a fine lasing wavelength tuning sensitivity (change of lasing wavelength over change of lattice constant) of 0.08 through the transverse lattice constant tuning.

Spatial modal control of two-dimensional photonic crystal Bragg lasers.

We investigate the modal losses and field distributions of different order transverse modes supported by the photonic crystal Bragg structure using a transfer matrix method. We find that only the fundamental transverse mode has a single-lobed near field and far field and there exists a trade-off between ensuring lasing in the fundamental transverse mode and reducing the threshold. Employing these design principles, we experimentally demonstrate a large-area, edge-emitting, and single-mode semiconductor photonic crystal Bragg laser with a single-lobed, diffraction-limited far field under continuous wave condition.

Electrically pumped two-dimensional Bragg grating lasers.

We demonstrate electrically pumped InGaAsP two-dimensional Bragg grating (2DBG) lasers with two line defects. The 2DBG structure uses a weak 2D index perturbation surface grating to control the optical modes in the plane of the wafer. Measurements of the 2DBG lasers show that modal control in both the longitudinal and transverse directions is due to the gratings and defects. The 2DBG lasers are promising candidates for single-mode, high power, and high efficiency large-area lasers.

Transmission and group delay of microring coupled-resonator optical waveguides.

We measured the transmission and group delay of microring coupled-resonator optical waveguides (CROWs). The CROWs consisted of 12 weakly coupled, microring resonators fabricated in optical polymers (PMMA on Cytop). The intrinsic quality factor of the resonators was 18,000 and the interresonator coupling was 1%, resulting in a delay of 110-140 ps and a slowing factor of 23-29 over a 17 GHz bandwidth.