Field-effect-tuned lateral organic diodes.

The operation of organic diodes in solar cells and light-emitting displays strongly depends on the properties of the interfaces between hole- and electron-carrying organic semiconductors. Such interfaces are difficult to characterize, as they are usually buried under the surface or exist as an irregular "bulk heterojunction." Using a unique fluorinated barrier layer-based lithographic technique, we fabricated a lateral organic p-n junction, allowing the first observation of the potential at an organic p-n interface simultaneously with the charge transport measurements. We find that the diode characteristics of the device (current output and rectification ratio) are consistent with the changes in the surface potentials near the junction, and the current-voltage curves and junction potentials are strongly and self-consistently modulated by a third, gate electrode. The generality of our technique makes this an attractive method to investigate the physics of organic semiconductor junctions. The lithographic technique is applicable to a wide variety of soft material patterns. The observation of built-in potentials makes an important connection between organic junctions and textbook descriptions of inorganic devices. Finally, these kinds of potentials may prove to be controlling factors in charge separation efficiency in organic photovoltaics.

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors.

Sodium beta-alumina (SBA) has high two-dimensional conductivity, owing to mobile sodium ions in lattice planes, between which are insulating AlO(x) layers. SBA can provide high capacitance perpendicular to the planes, while causing negligible leakage current owing to the lack of electron carriers and limited mobility of sodium ions through the aluminium oxide layers. Here, we describe sol-gel-beta-alumina films as transistor gate dielectrics with solution-deposited zinc-oxide-based semiconductors and indium tin oxide (ITO) gate electrodes. The transistors operate in air with a few volts input. The highest electron mobility, 28.0 cm2 V(-1) s(-1), was from zinc tin oxide (ZTO), with an on/off ratio of 2 x 10(4). ZTO over a lower-temperature, amorphous dielectric, had a mobility of 10 cm2 V(-1) s(-1). We also used silicon wafer and flexible polyimide-aluminium foil substrates for solution-processed n-type oxide and organic transistors. Using poly(3,4-ethylenedioxythiophene) poly(styrenesulphonate) conducting polymer electrodes, we prepared an all-solution-processed, low-voltage transparent oxide transistor on an ITO glass substrate.

Synthesis, structural characterization, and unusual field-effect behavior of organic transistor semiconductor oligomers: inferiority of oxadiazole compared with other electron-withdrawing subunits.

A new series of heterocyclic oligomers based on the 1,3,4-oxadiazole ring were synthesized. Other electron-deficient cores (fluorenone and fumaronitrile) were introduced to investigate the oligomers as n-channel materials. The physical properties, thin film morphologies, and field-effect transistor characteristics of the oligomers were evaluated. Thin films were deposited at different substrate temperatures and on variously coated Si/SiO(2) for device optimization. Contrary to our expectations, the thin film devices of 4 revealed p-channel behavior, and the average hole mobility was 0.14 cm(2) V(-1) s(-1) (maximum value 0.18 cm(2) V(-1) s(-1)). Compound 11 is the first example of an oxadiazole-containing organic semiconductor (OSC) oligomer in an n-channel organic field-effect transistor (OFET) and shows moderate mobilities. Non-oxadiazole-containing oligomers 9 and 12 showed n-channel OFET behavior on hexamethyldisilazane-treated and Cytop spin-coated SiO(2) in vacuum. These are the first fluorenone- and fumaronitrile-based n-OSCs demonstrated in transistors. However, oxadiazole-core materials 14 and 16 were inactive in transistor devices.

Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 µA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 µm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.