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We report the photoluminescence (PL) and cathodoluminescence (CL) properties of face-capped [Mo6Xi8La6]2- (X = Cl, Br, I; L = organic or inorganic ligands) cluster units. We show that the emission of Mo6 metal atom clusters depends not only on the nature of X and L ligands bound to the cluster and counter-cations, but also on the excitation source. Seven members of the AxMo6Xi8La6 series (A = Cs+, (n-C4H9)4N+, NH4+) were selected to evaluate the influence of counter-cations and ligands on de-excitation mechanisms responsible for multicomponent emission of cluster units. This study evaluates the ageing of each member of the series, which is crucial for further energy conversion applications (photovoltaic, lighting, water splitting, etc.).
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Bioimaging and cell labeling using red or near infrared phosphors emitting in the "therapeutic window" of biological tissues have recently become some of the most active research fields in modern medical diagnostics. However, because organic and inorganic autofluorophores are omnipresent in nature, very often the background signal from fluorochromes other than targeted probes has to be eliminated. This discrimination could be available using a time-gated luminescence microscopy (TGLM) technique associated with long lifetime phosphorescent nanocomposites. Here, we report new SiO2 nanostructured particle (50 nm in diameter) embedded luminescent nanosized [Mo6I8(C2F5COO)6]2- metal atom clusters (1 nm in diameter), successfully prepared by the microemulsion technique. This combination provides new physical insight and displays red emission in biological based solution under UV-Vis excitation with long lifetimes of around 17 and 84 µs. Moreover, the nanoparticles can be internalized by cancer cells after surface functionalization by transferrin protein and clearly imaged by TGLM under excitation at 365 nm. The nanocomposites have been mainly characterized by scanning and transmission electron microscopies (SEM and HAADF-STEM), UV-Vis and photoluminescence (PL) spectroscopies.
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The development of phosphor devices free of heavy metal or rare earth elements is an important issue for environmental reasons and energy efficiency. Different mixtures of ZnO nanocrystals with Cs2Mo6I8(OOC2F5)6 cluster compound (CMIF) dispersed into polyvinylpyrrolidone matrix have been prepared by very simple and low cost solution chemistry. The resulting solutions have been used to fabricate highly transparent and luminescent films by dip coating free of heavy metal or rare earth elements. The luminescence properties of solution and dip-coated films were investigated. The luminescence of such a system is strongly dependent on the ratios between ZnO and CMIF amounts, the excitation wavelength and the nature of the system. By varying these two parameters (ratio and wavelength), a large variety of colors, from blue to red as well as white, can be achieved. In addition, differences in the luminescence properties have been observed between solutions and thin films as well as changes of CMIF emission band maximum wavelength. This may suggest some possible interactions between the different luminophore centers, such as energy transfer or ligands exchange on the Mo6 clusters.
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A series of Eu(2+)- and Mn(2+)-codoped γ-AlON (Al1.7O2.1N0.3) phosphors was synthesized at 1800 °C under 0.5 MPa N2 by using the gas-pressure sintering method (GPS). Eu(2+) and Mn(2+) ions were proved to enter into γ-AlON host lattice by means of XRD, CL, and EDS measurements. Under 365 nm excitation, two emission peaks located at 472 and 517 nm, resulting from 4f(6)5d(1) â 4f(7) and (4)T1(4G) â (6)A1 electron transitions of Eu(2+) and Mn(2+), respectively, can be observed. Energy transfer from Eu(2+) to Mn(2+) was evidenced by directly observing appreciable overlap between the excitation spectrum of Mn(2+) and the emission spectrum of Eu(2+) as well as by the decreased decay time of Eu(2+) with increasing Mn(2+) concentration. The critical energy-transfer distance between Eu(2+) and Mn(2+) and the energy-transfer efficiency were also calculated. The mechanism of energy transfer was identified as a resonant type via a dipole-dipole mechanism. The external quantum efficiency was increased 7 times (from 7% for γ-AlON:Mn(2+) to 49% for γ-AlON:Mn(2+),Eu(2+) under 365 nm excitation), and color-tunable emissions from blue-green to green-yellow were also realized with the Eu(2+) â Mn(2+) energy transfer in γ-AlON.
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Knowing the physicochemical properties of a material is of great importance to design and utilize it in a suitable way. In this paper, we conduct a comprehensive survey of photoluminescence spectra, localized cathodoluminescence, temperature-dependent luminescence efficiency, and applications of Eu(2+)-doped Sr0.5Ba0.5Si2O2N2 in solid-state lighting. This phosphor exhibits a broad emission band with a maximum at 560-580 nm and a full-width at half maximum of 92-103 nm upon blue light excitation, whereas a dual-band emission (i.e., 470 nm and 550 nm) is observed under electron beam irradiation due to perhaps the intergrowth of BaSi2O2N2:Eu(2+) and Sr0.5+σBa0.5-σSi2O2N2:Eu(2+) in each phosphor particle. Under 450 nm blue light irradiation, this yellow phosphor exhibits excellent luminescence properties with absorption, internal and external efficiencies of 83.2, 87.7 and 72.6%, respectively. Furthermore, it also possesses high thermal stability, with the quantum efficiency being decreased by only 4.2% at 150 °C and a high quenching temperature of 450 °C. High-efficiency white LEDs using the title phosphor have a luminous efficacy, color temperature and color rendition of â¼120 lm W(-1), 6000 K and 61, respectively, validating its suitability for use in solid-state white lighting.
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ZnO nanosheets with triangular morphology have been synthesized on an Au-coated silicon substrate through a facile thermal evaporation process. The morphologies and microstructures of the nanosheets were studied by a scanning electron microscope (SEM) and a high-resolution transmission electron microscope (HR-TEM). These studies show that a nanosheet is commonly composed of two parts: a triangular ZnO sheet and an Au nanoparticle attached on its tip-end. Detailed crystallography analyses conclude that the formation of the highly crystalline nanostructures can be assigned to a combination of a vapor-liquid-solid (VLS) process that is believed to be responsible for its initial nucleation and subsequent crystallization along the growth direction, and a vapor-solid (VS) process that is responsible for its further radial growth. The spatially-resolved cathodoluminescence (CL) spectra exhibit a sharp strong near-band-edge (NBE) emission in the ultraviolet range and a negligible green emission.
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Oriented assemblies of small crystals forming larger structures are common in nature and crucial for forthcoming technologies as they circumvent the difficulties of structural manipulation at microscopic scale. We have discovered two distinctive concentric assemblies of zinc oxide rods, wherein each rod has an intrinsically positive and a negative polar end induced by the noncentrosymmetric arrangement of Zn and O atoms. All the rods in a single assembly emanate out of a central core maintaining a single polar direction. Due to growth along the two polar surfaces with different atomic arrangements, these assemblies are distinct in their intrinsic properties and exhibit strong UV luminescence in the exterior of Zn-polar assemblies, unlike the O-polar assemblies. Although novel applications can be envisioned, these observations suggest that hierarchical organization with respect to internal asymmetry might be widespread in natural crystal assemblies.
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We have investigated the local luminescence properties of Eu-doped CaAlSiN3 by using low-energy electron beam (e-beam) techniques. The particles yield broad emission centered at 655 nm with a shoulder at higher wavelength under light excitation, and a broad band around 643 nm with a tail at 540 nm under e-beam excitation. Using cathodoluminescence (CL) in a scanning electron microscope (SEM), we have observed small and large particles, which, although with different compositions, exhibit Eu2+-related emissions at 645 and 635 nm, respectively. Local CL measurements reveal that the Eu2+ emission may actually consist of several bands. In addition to the red broad band, regularly spaced sharp peaks have been occasionally observed. These luminescence variations may originate from a variation in the composition inside CaAlSiN3.
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As a structural analogue of the carbon nanotube (CNT), the boron nitride nanotube (BNNT) has become one of the most intriguing non-carbon nanostructures. However, up to now the pre-existing restrictions/limitations of BNNT syntheses have made the progress in their research rather modest. This work presents a new route toward the synthesis of highly pure ultrafine BNNTs based on a modified boron oxide (BO) CVD method. A new effective precursor--a mixture of Li2O and B--has been proposed for the growth of thin, few-layer BNNTs in bulk amounts. The Li2O utilized as the precursor plays the crucial role for the present nanotube growth. The prepared BNNTs have average external diameters of sub-10 nm and lengths of up to tens of µm. Electron energy loss spectrometry and Raman spectroscopy demonstrate the ultimate phase purity of the ultrafine BNNTs. Property studies indicate that the ultrafine nanotubes are perfect electrical insulators exhibiting superb resistance to oxidation and strong UV emission. Moreover, their reduced diameters lead to a dramatically decreased population of defects within the tube walls and result in the observation of near-band-edge (NBE) emission at room temperature.
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High-quality, crystalline AlN whiskers with large yield have been synthesized through the direct nitridation of Al vapor at high temperature. The AlN whiskers exhibited a strong and uniform ultraviolet emission at approximately 352 nm, which is notably shorter compared with the wavelength of previously reported one-dimensional AlN nanostructures. Energy filtered transmission electron microscope (TEM) analyses indicated that nitrogen deficiency and rather lower oxygen content in the AlN lattice might be responsible for the strong 352 nm ultraviolet emission.
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We report the influence of the native amorphous SiO(2) shell on the cathodoluminescence emission of 3C-SiC/SiO(2) core/shell nanowires. A shell-induced enhancement of the SiC near-band-edge emission is observed and studied as a function of the silicon dioxide thickness. Since the diameter of the investigated SiC cores rules out any direct bandgap optical transitions due to confinement effects, this enhancement is ascribed to a carrier diffusion from the shell to the core, promoted by the alignment of the SiO(2) and SiC bands in a type I quantum well. An accurate correlation between the optical emission and structural and SiO(2)-SiC interface properties is also reported.
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Spatially and spectrally resolved low-energy cathodoluminescence (CL) microscopy was applied to the characterization of nanostructures. CL has the advantage of revealing not only the presence of luminescence centers but also their spatial distribution. The use of electrons as an excitation source allows a direct comparison with other electron-beam techniques. Thus, CL is a powerful method to correlate luminescence with the sample structure and to clarify the origin of the luminescence. However, caution is needed in the quantitative analysis of CL measurements. In this review, the advantages of cathodoluminescence for qualitative analysis and disadvantages for quantitative analysis are presented on the example of nanostructures.
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Boron nitride (BN) microtubes were synthesized in a vertical induction furnace using Li(2)CO(3) and B reactants. Their structures and morphologies were investigated using x-ray diffraction, scanning and transmission electron microscopy, and energy-dispersive x-ray spectroscopy. The microtubes have diameters of 1-3 microm, lengths of up to hundreds of micrometers, and well-structured ultrathin walls only approximately 50 nm thick. A mechanism combining the vapor-liquid-solid (VLS) and template self-sacrificing processes is proposed to explain the formation of these novel one-dimensional microstructures, in which the Li(2)O-B(2)O(3) eutectic reaction plays an important role. Cathodoluminescence studies show that even at room temperature the thin-walled BN microtubes can possess an intense band-edge emission at approximately 216.5 nm, which is distinct compared with other BN nanostructures. The study suggests that the thin-walled BN microtubes should be promising for constructing compact deep UV devices and find potential applications in microreactors and microfluidic and drug delivery systems.
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Compostos de Boro/química , Cristalização/métodos , Iluminação/métodos , Medições Luminescentes/métodos , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Nanotecnologia/métodos , Substâncias Macromoleculares/química , Teste de Materiais , Conformação Molecular , Tamanho da Partícula , Propriedades de Superfície , Temperatura , Raios UltravioletaRESUMO
We fabricated ellipsoid-shaped ZnGa(2)O(4) nanorods using a newly-designed chemical vapor deposition (CVD) process, different from the conventional methods. The optical properties of nanorods were studied using cathodoluminescence (CL) measurements. The nanorods displayed three distinct emissions centered at 360, 450 and 550 nm. The luminescence mechanism is thoroughly discussed and explained based on a detailed structural and compositional study with a transmission electron microscope (TEM) equipped with an electron energy loss spectrometer (EELS).
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To modify the luminescence properties of Ce3+-doped Y3Al5O12 (YAG) phosphors, they have been coated with a carbon layer by chemical vapor deposition and subsequently heat-treated at high temperature under N2 atmosphere. Luminescence of the carbon coated YAG:Ce3+ phosphors has been investigated as a function of heat-treatment at 1500 and 1650 °C. The 540 nm emission intensity of C@YAG:Ce3+ is the highest when heated at 1650 °C, while a blue emission at 400-420 nm is observed when heated at 1500 °C but not at 1650 °C. It is verified by X-ray diffraction (XRD) that the intriguing luminescence changes are induced by the formation of new phases in C@YAG:Ce3+-1500 °C, which disappear in C@YAG:Ce3+-1650 °C. In order to understand the mechanisms responsible for the enhancement of YAG:Ce3+ emission and the presence of the blue emission observed for C@YAG:Ce3+-1500 °C, the samples have been investigated by a combination of several electron microscopy techniques, such as HRTEM, SEM-CL, and SEM-EDS. This local and cross-sectional analysis clearly reveals a gradual transformation of phase and morphology in heated C@YAG:Ce3+ phosphors, which is related to a reaction between C and YAG:Ce3+ in N2 atmosphere. Through reaction between the carbon layer and YAG host materials, the emission colour of the phosphors can be modified from yellow, white, and then back to yellow under UV excitation as a function of heat-treatment in N2 atmosphere.
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(GaN)1-x(ZnO)x solid-solution nanostructures with superior crystallinity, large surface areas and visible light absorption have been regarded as promising photocatalysts for overall water splitting to produce H2. In this work, we report the preparation of (GaN)1-x(ZnO)x solid-solution nanorods with a high ZnO solubility up to 95% via a two-step synthetic route, which starts from a sol-gel reaction and follows with a nitridation process. Moreover, we clearly demonstrated that the crystallographic facets of (GaN)1-x(ZnO)x solid-solution nanorods can be finely tailored from non-polar {10Ì10} to semipolar {10Ì11} and then finally to mixed {10Ì1} and polar {000Ì1} by carefully controlling the growth temperature and nitridation time. Correspondingly, the ZnO content in the GaN lattice can be achieved in the range of â¼25%-95%. Room-temperature cathodoluminescence (CL) measurements on the three types of (GaN)1-x(ZnO)x solid-solution nanorods indicate that the minimum band-gap of 2.46 eV of the solid-solution nanorods is achieved under a ZnO solubility of 25%. The efficiency and versatility of our strategy in the band-gap and facet engineering of (GaN)1-x(ZnO)x solid-solution nanorods will enhance their promising photocatalytic utilizations like an overall water splitting for H2 production under visible-light irradiation.
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Nitride and oxynitride (Sialon) phosphors are good candidates for the ultraviolet and visible emission applications. High performance, good stability and flexibility of their emission properties can be achieved by controlling their composition and dopants. However, a lot of work is still required to improve their properties and to reduce the production cost. A possible approach is to correlate the luminescence properties of the Sialon particles with their local structural and chemical environment in order to optimize their growth parameters and find novel phosphors. For such a purpose, the low-voltage cathodoluminescence (CL) microscopy is a powerful technique. The use of electron as an excitation source allows detecting most of the luminescence centers, revealing their luminescence distribution spatially and in depth, directly comparing CL results with the other electron-based techniques, and investigating the stability of their luminescence properties under stress. Such advantages for phosphors characterization will be highlighted through examples of investigation on several Sialon phosphors by low-energy CL.
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Luminescência , Nitrogênio , Elétrons , Medições Luminescentes , Microscopia , Microscopia Eletrônica de Varredura , Tamanho da PartículaRESUMO
Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading. The idea using buffering/barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.
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Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.
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Mn(2+) doped-AlN red phosphors were prepared by the solid-state reaction method. X-ray diffraction, SEM-EDS, photoluminescence and cathodoluminescence were utilized to characterize the prepared phosphor. Under UV light or electron beam excitation, the AlN:Mn(2+) phosphors exhibit a strong red emission centered at 600 nm, which is ascribed to the characteristic (4)T1((4)G)-(6)A1((6)S) transition of Mn(2+). Energy level diagrams were constructed to discuss the photoluminescence and cathodoluminescence processes of the AlN:1% Mn(2+) phosphor. The oxygen-related defects in AlN have great influence on the photoluminescence and cathodoluminescence properties of the AlN:1% Mn(2+) phosphor. The dependence of brightness on accelerating voltage or electric current, the decay behavior of CL intensity under the electron bombardment, and the stability of CIE chromaticity coordinates were investigated in detail. The results indicate that the AlN:Mn(2+) phosphor exhibits a higher brightness, higher color purity, and lower saturation compared to the red Y2O3:Eu(3+) phosphor, which gives the AlN:Mn(2+) phosphor great potential as a red phosphor for full color FEDs.