Heterogeneous micromechanical properties of the extracellular matrix in healthy and infarcted hearts.

Infarcted hearts are macroscopically stiffer than healthy organs. Nevertheless, although cell behavior is mediated by the physical features of the cell niche, the intrinsic micromechanical properties of healthy and infarcted heart extracellular matrix (ECM) remain poorly characterized. Using atomic force microscopy, we studied ECM micromechanics of different histological regions of the left ventricle wall of healthy and infarcted mice. Hearts excised from healthy (n=8) and infarcted mice (n=8) were decellularized with sodium dodecyl sulfate and cut into 12 µm thick slices. Healthy ventricular ECM revealed marked mechanical heterogeneity across histological regions of the ventricular wall with the effective Young's modulus ranging from 30.2 ± 2.8 to 74.5 ± 8.7 kPa in collagen- and elastin-rich regions of the myocardium, respectively. Infarcted ECM showed a predominant collagen composition and was 3-fold stiffer than collagen-rich regions of the healthy myocardium. ECM of both healthy and infarcted hearts exhibited a solid-like viscoelastic behavior that conforms to two power-law rheology. Knowledge of intrinsic micromechanical properties of the ECM at the length scale at which cells sense their environment will provide further insight into the cell-scaffold interplay in healthy and infarcted hearts.

Crack propagation and fracture in silicon wafers under thermal stress.

The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures where Si is still in the brittle regime, the strain may accumulate if a microcrack is pinned. If a critical value is exceeded either a new or a longer crack will be formed, which results with high probability in wafer breakage. The strain reduces most efficiently by forming (hhl) or (hkl) crack planes of high energy instead of the expected low-energy cleavage planes like {111}. Dangerous cracks, which become active during heat treatment and may shatter the whole wafer, can be identified from diffraction images simply by measuring the geometrical dimensions of the strain-related contrast around the crack tip. Once the plastic regime at higher temperature is reached, strain is reduced by generating dislocation loops and slip bands and no wafer breakage occurs. There is only a small temperature window within which crack propagation is possible during rapid annealing.