Optimisation of geometric aspect ratio of thin film transistors for low-cost flexible CMOS inverters and its practical implementation.

A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they can be manufactured at low processing temperatures and low-cost per unit area, unlike traditional silicon devices. The development of complementary metal-oxide-semiconductor (CMOS) technology based on these materials remains challenging due to differences in performance between n- and p-type TFTs. Existing geometric rules typically compensate the lower mobility of the metal-oxide p-type TFT by scaling up the width-to-length (W/L) ratio but fail to take into account the significant off-state leakage current. Here we propose the concept of an optimal geometric aspect ratio which maximises the inverter efficiency represented by the average switching current divided by the static currents. This universal method is especially useful for the design of low-power CMOS inverters based on metal-oxides, where the large off-current of the p-type TFT dominates the static power consumption of the inverter. We model the inverter efficiency and noise margins of metal-oxide CMOS inverters with different geometric aspect ratios and compare the performance to different inverter configurations. The modelling results are verified experimentally by fabricating CMOS inverter configurations consisting of n-type indium-silicon-oxide (ISO) TFTs and p-type tin monoxide (SnO) TFTs. Notably, our results show that reducing W/L of metal-oxide p-type TFTs increases the inverter efficiency while reducing the area compared to simply scaling up W/L inversely with mobility. We anticipate this work provides a straightforward method to geometrically optimise flexible CMOS inverters, which will remain relevant even as the performance of TFTs continues to evolve.

Conjunction of triboelectric nanogenerator with induction coils as wireless power sources and self-powered wireless sensors.

Here we demonstrate a magnetic resonance coupling based wireless triboelectric nanogenerator (TENG) and fully self-powered wireless sensors. By integrating a microswitch and an inductor with the TENG, the pulsed voltage output is converted into a sinusoidal voltage signal with a fixed frequency. This can be transmitted wirelessly from the transmit coil to the resonant-coupled receiver coil with an efficiency of 73% for a 5 cm distance between the two coils (10 cm diameter). Analytic models of the oscillating and coupled voltage signals for the wireless energy transfer are developed, showing excellent agreement with the experimental results. A TENG of 40 × 50 mm2 can wirelessly light up 70 LEDs or charge up a 15 µF capacitor to 12.5 V in ~90 s. The system is further utilized for two types of fully self-powered wireless chipless sensors with no microelectronic components. The technologies demonstrate an innovative strategy for a wireless 'green' power source and sensing.

Stress and crystallization of plasma enhanced chemical vapour deposition nanocrystalline silicon films.

Nanocrystalline Si films were prepared with a RF-PECVD system using different SiH4/H2 ratios, plasma powers, substrate temperatures and annealing conditions. The film's intrinsic stress was characterized in relation to the crystallization fraction. Results show that an increasing H2 gas ratio, plasma power or substrate temperature can shift the growth mechanism across a transition point, past which nanocrystalline Si is dominant in the film structure. The film's intrinsic stress normally peaks during this transition region. Different mechanisms of stress formation and relaxation during film growth were discussed, including ion bombardment effects, hydrogen induced bond-reconstruction and nanocomposite effects (nanocrystals embedded in an amorphous Si matrix). A three-parameter schematic plot has been proposed which is based on the results obtained. The film structure and stress are presented in relation to SiH4 gas ratio, plasma power and temperature.

In-situ observation of transition between surface relief and wrinkling in thin film shape memory alloys.

Significant surface morphology evolution between relief and wrinkling was observed on a 3.5 microm thick TiNiCu film sputter-deposited on a silicon substrate. At room temperature, variation in surface relief morphology (from separated martensite crystals embedded in amorphous matrix to fully interweaved martensite plates) was observed with slight change in film composition. The phenomenon was attributed to variations in crystallization temperatures of as-deposited amorphous films during annealing because of the compositional difference. During thermal cycling between room temperature and 100 degrees C, reversible surface morphology changes can be observed between surface relief and wrinkling patterns. The formation of the surface wrinkling is attributed to the large compressive stress in the film during high temperature post-annealing and crystallization, whereas surface relief is caused by the martensitic transformation to relieve the large tensile stress in the film. Compositional effect on this surface morphology evolution is discussed. Results also indicate that there is a critical dimension for the wrinkling to occur, and a small circular island can only relax by in-plane expansion.

Film bulk acoustic resonators integrated on arbitrary substrates using a polymer support layer.

The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, or as a gravimetric sensor for biochemical or physical sensing. Current device architectures require the use of an acoustic mirror or a freestanding membrane and are fabricated as discrete components. A new architecture is demonstrated which permits fabrication and integration of FBARs on arbitrary substrates. Wave confinement is achieved by fabricating the resonator on a polyimide support layer. Results show when the polymer thickness is greater than a critical value, d, the FBARs have similar performance to devices using alternative architectures. For ZnO FBARs operating at 1.3-2.2 GHz, d is ~9 µm, and the devices have a Q-factor of 470, comparable to 493 for the membrane architecture devices. The polymer support makes the resonators insensitive to the underlying substrate. Yields over 95% have been achieved on roughened silicon, copper and glass.

Dual-mode thin film bulk acoustic wave resonators for parallel sensing of temperature and mass loading.

Thin film bulk acoustic wave resonator (FBAR) devices supporting simultaneously multiple resonance modes have been designed for gravimetric sensing. The mechanism for dual-mode generation within a single device has been discussed, and theoretical calculations based on finite element analysis allowed the fabrication of FBARs whose resonance modes have opposite reactions to temperature changes; one of the modes exhibiting a positive frequency shift for a rise of temperature whilst the other mode exhibits a negative shift. Both modes exhibit negative frequency shift for a mass load and hence by monitoring simultaneously both modes it is possible to distinguish whether a change in the resonance frequency is due to a mass load or temperature variation (or a combination of both), avoiding false positive/negative responses in gravimetric sensing without the need of additional reference devices or complex electronics.

Microfluidics based on ZnO/nanocrystalline diamond surface acoustic wave devices.

Surface acoustic wave (SAW) devices with 64 µm wavelength were fabricated on a zinc oxide (ZnO) film deposited on top of an ultra-smooth nanocrystalline diamond (UNCD) layer. The smooth surface of the UNCD film allowed the growth of the ZnO film with excellent c-axis orientation and low surface roughness, suitable for SAW fabrication, and could restrain the wave from significantly dissipating into the substrate. The frequency response of the fabricated devices was characterized and a Rayleigh mode was observed at ∼65.4 MHz. This mode was utilised to demonstrate that the ZnO/UNCD SAW device can be successfully used for microfluidic applications. Streaming, pumping, and jetting using microdroplets of 0.5 and 20 µl were achieved and characterized under different powers applied to the SAW device, focusing more on the jetting behaviors induced by the ZnO SAW.

Dynamic roughening of tetrahedral amorphous carbon.

The roughness of tetrahedral amorphous carbon (ta-C) films grown at room temperature is measured as a function of film thickness by atomic force microscopy, to extract roughness and growth exponents of alpha approximately 0.39 and beta approximately 0-0.1, respectively. This extremely small growth exponent shows that some form of surface diffusion and relaxation operates at a homologous temperature of 0.07, much lower than in any other material. This is accounted for by a Monte Carlo simulation, which assumes a smoothening during a thermal spike, following energetic ion deposition. The low roughness allows ta-C to be used as an ultrathin protective coating on magnetic disk storage systems with approximately 1 Tbit/in.(2) storage density.