Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: The Phosphorene and MoS2 from Charge-Correction Method.

Despite the great appeal of two-dimensional semiconductors for electronics and optoelectronics, to achieve the required charge carrier concentrations by means of chemical doping remains a challenge due to large defect ionization energies (IEs). Here, by decomposing the defect IEs into three parts based on ionization process, we propose a conceptual picture that the large defect IEs are caused by two effects of reduced dimensionality. While the quantum confinement effect makes the neutral single-electron point defect levels deep, the reduced screening effect leads to high energy cost for the electronic relaxation. The first-principles calculations for black phosphorus and MoS2 do demonstrate the general trend. Using BP monolayer either embedded into dielectric continuum or encapsulated between two hBN layers, we demonstrate the feasibility of increasing the screening to reduce the defect IEs. Our analysis is expected to help achieve effective carrier doping and open ways toward more extensive applications of 2D semiconductors.

More Se Vacancies in Sb2 Se3 under Se-Rich Conditions: An Abnormal Behavior Induced by Defect-Correlation in Compensated Compound Semiconductors.

It was believed that the Se-rich synthesis condition can suppress the formation of deep-level donor defect VSe (selenium vacancy) in Sb2 Se3 and is thus critical for fabricating high-efficiency Sb2 Se3 solar cells. However, here it is shown that by first-principles calculations the density of VSe increases unexpectedly to 1016 cm-3 when the Se chemical potential increases, so Se-rich condition promotes rather than suppresses the formation of VSe . Therefore, high density of VSe is thermodynamically inevitable, no matter under Se-poor or Se-rich conditions. This abnormal behavior can be explained by a physical concept "defect-correlation", i.e., when donor and acceptor defects compensate each other, all defects become correlated with each other due to the formation energy dependence on Fermi level which is determined by densities of all ionized defects. In quasi-1D Sb2 Se3 , there are many defects and the complicated defect-correlation can give rise to abnormal behaviors, e.g., lowering Fermi level and thus decreasing the formation energy of ionized donor VSe 2+ in Se-rich Sb2 Se3 . Such behavior exists also in Sb2 S3 . It explains the recent experiments that the extremely Se-rich condition causes the efficiency drop of Sb2 Se3 solar cells, and demonstrates that the common chemical intuition and defect engineering strategies may be invalid in compensated semiconductors.

Hyperdynamics simulations with ab initio forces.

By applying the locally optimal rotation method to deal with the lowest eigenvalue of a Hessian matrix, we have efficiently incorporated the hyperdynamics method into the ab initio scheme. In the present method, we only need to calculate the first derivative of the potential and several more force calls in each molecular dynamics (MD) step, which makes hyperdynamics simulation applicable in ab initio MD simulations. With this implementation, we are able to simulate defect diffusion in silicon with boost factors up to 105. We utilized both direct MD and the hyperdynamics method to investigate diffusion of lithium atoms and silicon vacancies in silicon. We identified the complex diffusion process. The obtained diffusion coefficients of Li atoms and Si vacancies are in good agreement with the direct MD results.

Topological Dirac States beyond π-Orbitals for Silicene on SiC(0001) Surface.

The discovery of intriguing properties related to the Dirac states in graphene has spurred huge interest in exploring its two-dimensional group-IV counterparts, such as silicene, germanene, and stanene. However, these materials have to be obtained via synthesizing on substrates with strong interfacial interactions, which usually destroy their intrinsic π(pz)-orbital Dirac states. Here we report a theoretical study on the existence of Dirac states arising from the px,y orbitals instead of pz orbitals in silicene on 4H-SiC(0001), which survive in spite of the strong interfacial interactions. We also show that the exchange field together with the spin-orbital coupling give rise to a detectable band gap of 1.3 meV. Berry curvature calculations demonstrate the nontrivial topological nature of such Dirac states with a Chern number C = 2, presenting the potential of realizing quantum anomalous Hall effect for silicene on SiC(0001). Finally, we construct a minimal effective model to capture the low-energy physics of this system. This finding is expected to be also applicable to germanene and stanene and imply great application potentials in nanoelectronics.

Semiconductor-to-metal transition from monolayer to bilayer blue phosphorous induced by extremely strong interlayer coupling: a first-principles study.

Monolayer blue phosphorous has a large band gap of 2.76 eV but counterintuitively the most stable bilayer blue phosphorous has a negative band gap of -0.51 eV. Such a large band gap reduction from just monolayer to bilayer has not been revealed before, the underlying mechanism behind which is important for understanding interlayer interactions. In this work, we reveal the origin of the semiconductor-to-metal transition using first-principles calculations and tight-binding models. We find that the interlayer interactions are extremely strong, which can be attributed to the short layer distance and strong π-like atomic orbital couplings. Therefore, the upshift of the valence band maximum (VBM) from monolayer to bilayer blue-P is so large that the VBM in the bilayer gets higher than the conduction band minimum, leading to a negative band gap and an energy gain. Besides, the interlayer atomic misplacements weaken the couplings of out-of-plane orbitals. Therefore, the energy gain due to the semiconductor-to-metal transition is larger than the energy cost due to interlayer repulsions, thus stabilizing the metallic phase. The large band gap reduction with layer number increasing is expected to exist in other similar layered systems.

Crystal structure prediction by combining graph network and optimization algorithm.

Crystal structure prediction is a long-standing challenge in condensed matter and chemical science. Here we report a machine-learning approach for crystal structure prediction, in which a graph network (GN) is employed to establish a correlation model between the crystal structure and formation enthalpies at the given database, and an optimization algorithm (OA) is used to accelerate the search for crystal structure with lowest formation enthalpy. The framework of the utilized approach (a database + a GN model + an optimization algorithm) is flexible. We implemented two benchmark databases, i.e., the open quantum materials database (OQMD) and Matbench (MatB), and three OAs, i.e., random searching (RAS), particle-swarm optimization (PSO) and Bayesian optimization (BO), that can predict crystal structures at a given number of atoms in a periodic cell. The comparative studies show that the GN model trained on MatB combined with BO, i.e., GN(MatB)-BO, exhibit the best performance for predicting crystal structures of 29 typical compounds with a computational cost three orders of magnitude less than that required for conventional approaches screening structures through density functional theory calculation. The flexible framework in combination with a materials database, a graph network, and an optimization algorithm may open new avenues for data-driven crystal structural predictions.

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands.

It is known that carrier mobility in layered semiconductors generally increases from two-dimensions (2D) to three-dimensions due to fewer scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS2. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by few intervalley scattering channels and weaker corresponding electron-phonon couplings compared to the bulk case. We show that it is the matching between the electronic band structure and phonon spectrum rather than their densities of electronic and phonon states that determines scattering channels. We propose, for the first time, the phonon-energy-resolved matching function to identify the intra- and inter-valley scattering channels. Furthermore, we show that multiple valleys do not necessarily lead to strong intervalley scattering if: (1) the scattering channels, which can be explicitly captured by the distribution of the matching function, are few due to the small matching between the corresponding electron and phonon bands; and/or (2) the multiple valleys are far apart in the reciprocal space and composed of out-of-plane orbitals so that the corresponding electron-phonon coupling strengths are weak. Consequently, the searching scope of high-mobility 2D materials can be reasonably enlarged using the matching function as useful guidance with the help of band edge orbital analysis.

Enhancing Hole Density and Suppressing Recombination Centers through Illumination in Kesterite Thin Film Solar Cells.

Enhancing carrier density and increasing carrier lifetime are critical for the good performance of thin film solar cells. We apply illumination during the growth of kesterite Cu2ZnSnS4 (CZTS) to enhance hole density and suppress defects of nonradiative electron-hole recombination centers simultaneously. To examine the effect of the injected carriers generated by illumination, we first extend the scheme of detailed balance equations relating free carriers and defects beyond thermal equilibrium conditions by developing an extended Fermi level (EF') to characterize a homogeneous semiconductor with non-equilibrium carriers. On the basis of this scheme, we find that illumination can promote the formation of carrier-providing defects and suppress the formation of carrier-compensating defects. Then, we demonstrate that applying proper illumination during the growth of CZTS will help achieve a higher hole density and simultaneously suppress the formation of the SnZn antisite significantly, which are beneficial for the performance of CZTS solar cells.

Effective lifetime of non-equilibrium carriers in semiconductors from non-adiabatic molecular dynamics simulations.

The lifetimes of non-equilibrium charge carriers in semiconductors calculated using non-adiabatic molecular dynamics often differ from experimental results by orders of magnitude. By revisiting the definition of carrier lifetime, we report a systematic procedure for calculating the effective carrier lifetime in semiconductor crystals under realistic conditions. The consideration of all recombination mechanisms and the use of appropriate carrier and defect densities are crucial to bridging the gap between modeling and measurements. Our calculated effective carrier lifetime of CH3NH3PbI3 agrees with experiments, and is limited by band-to-band radiative recombination and Shockley-Read-Hall defect-assisted non-radiative recombination, whereas the band-to-band non-radiative recombination is found to be negligible. The procedure is further validated by application to the compound semiconductors CdTe and GaAs, and thus can be applied in carrier lifetime simulations in other material systems.

Finite temperature properties of clusters by replica exchange metadynamics: the water nonamer.

We introduce an approach for the accurate calculation of thermal properties of classical nanoclusters. On the basis of a recently developed enhanced sampling technique, replica exchange metadynamics, the method yields the true free energy of each relevant cluster structure, directly sampling its basin and measuring its occupancy in full equilibrium. All entropy sources, whether vibrational, rotational anharmonic, or especially configurational, the latter often forgotten in many cluster studies, are automatically included. For the present demonstration, we choose the water nonamer (H(2)O)(9), an extremely simple cluster, which nonetheless displays a sufficient complexity and interesting physics in its relevant structure spectrum. Within a standard TIP4P potential description of water, we find that the nonamer second relevant structure possesses a higher configurational entropy than the first, so that the two free energies surprisingly cross for increasing temperature.

Fully Boron-Sheet-Based Field Effect Transistors from First-Principles: Inverse Design of Semiconducting Boron Sheets.

High-performance two-dimensional (2D) field effect transistors (FETs) have a broad application prospect in future electronic devices. The lack of an ideal material system, however, hinders the breakthrough of 2D FETs. Recently, phase engineering offers a promising solution, but it requires both semiconducting and metallic phases of materials. Here we suggest borophenes as ideal systems for 2D FETs by theoretically searching semiconducting phases. Using multiobjective differential optimization algorithms implemented in the IM2ODE package and the first-principles calculations, we have successfully identified 16 new semiconducting borophenes. Among them, the B12-1 borophene is the most stable semiconducting phase, whose total energy is lower than any other known semiconducting borophenes. By considering not only the band alignments but also the lattice matches between semiconducting and metallic borophenes, we then have theoretically proposed several device models of fully boron-sheet-based 2D FETs. Our work provides beneficial ideas and attempts for discovering novel borophene-based 2D FETs.

Unusual interlayer coupling in layered Cu-based ternary chalcogenides CuMCh2 (M = Sb, Bi; Ch = S, Se).

Interlayer interactions play important roles in manipulating the electronic properties of layered semiconductors. One common mechanism is that the valence band maximum (VBM) and the conduction band minimum (CBM) in one layer couple to the VBM and CBM in another layer, respectively, resulting in the decrease of the band gap from the monolayer to the bilayer. Here we report an unusual interlayer coupling mechanism in layered Cu-based ternary chalcogenides CuMCh2 (M = Sb, Bi; Ch = S, Se) that the CBM in one layer strongly couples to the VBM in the other layer, leading to the band gap increase from the monolayer to the bilayer. Such an unusual interlayer interaction arises from the entangling between the electronic structures and the structures of CuMCh2 in which the cations M and anions Ch are alternatively arranged at the outmost part of each layer. Consequently, the M atom at the bottom of the upper layer is very close to the Ch atom at the top of the bottom layer, so that the orbitals of the M atom which dominate the CBM can strongly couple to the orbitals of the Ch atom which dominate the VBM, as demonstrated by the orbital hopping integrals obtained from the Wannier function analysis. The exceptional case of the unusual interlayer interaction revealed in this work enriches the diversity of the interlayer interactions in layered materials and is expected to exist in similar layered systems in which cations and anions are alternatively arranged at the outmost part of each layer.

The intriguing thermal conductivity of ice nanotubes.

We have investigated the thermal conductivity of various ice nanotubes (Ice-NTs) using the nonequilibrium molecular dynamics method. The results indicate that Ice-NTs have an unusually high thermal conductivity compared to that of the bulk ices. The thermal conductivity is sensitive to temperature, tube length and diameter, while being insensitive to polarization. We have also studied the confinement effect from single-walled carbon nanotubes (SWCNs). A very remarkable increase in the thermal conductivity is further observed after the Ice-NTs are confined in SWCNs.

First-principles studies for CO and O(2) on gold nanocluster.

First-principles calculations are performed to study the interaction of gold nanocluster Au(55) with small molecules CO and O(2). We find that the adsorption energy of CO on Au(55) is among 0.5-0.7 eV at different sites and [CO+O(2)] can be coadsorbed on Au(55). Comparisons between Au(55) and Au(32) show that the adsorption energy not only depends on the size of the cluster but also on the geometry of the cluster. Similar with smaller cluster (Au(8) and Au(32)), the energy difference between [CO+O(2)] and [CO(2)+O] on Au(55) is much larger than that in the free gas. Our calculations indicate that the nanocluster Au(55) can enhance the reaction process, CO+O(2)-->CO(2)+O, in which the reaction barrier is only about half electron volts.

First-principles study of small oxidized silver clusters.

The structure and stability of clusters Ag(n)O+(m), Ag(n)O(m), and Ag(n)O(m)- (n = 1-6, m = 1-2) are studied by using the first-principles method. Calculated results show that the properties studied are strongly dependent on the size and charge state of the clusters, some of which show the odd-even alteration. Generally, the oxidation drives the transition of silver clusters from two-dimensional (2D) to three-dimensional (3D) structures. It is found that the structure with dissociated O2 is more stable if the silver cluster can provide oxygen with enough electrons.

Structural transitions of non-helical Au nanotubes induced by axial compression.

Based on density functional calculations, we have found that axial compression can induce structural transitions between Au(n,n) and Au(2n,n) nanotubes. The corresponding energy barriers increase with n. Although Au(2n,n) nanotubes are energitically more stable, the energy difference between Au(n,n) and Au(2n,n) decreases with n. The structural transitions are believed to be unique in those nanotubes with metallic bonds, while nanotubes with covalent bonds, such as carbon nanotubes, will not have these features.

Thermal conductivity of disordered two-dimensional binary alloys.

Using non-equilibrium molecular dynamics simulations, we have studied the effect of disorder on the thermal conductivity of two-dimensional (2D) C1-xNx alloys. We find that the thermal conductivity not only depends on the substitution concentration of nitrogen, but also strongly depends on the disorder distribution. A general linear relationship is revealed between the thermal conductivity and the participation ratio of phonons in 2D alloys. Localization mode analysis further indicates that the thermal conductivity variation in the ordered alloys can be attributed to the number of inequivalent atoms. As for the disordered alloys, we find that the thermal conductivity variation can be described by a simple linear formula with the disorder degree and the substitution concentration. The present study suggests some general guidance for phonon manipulation and thermal engineering in low dimensional alloys.

Oxygen Vacancy Induced Flat Phonon Mode at FeSe /SrTiO3 interface.

A high-frequency optical phonon mode of SrTiO3 (STO) was found to assist the high-temperature superconductivity observed recently at the interface between monolayer FeSe and STO substrate. However, the origin of this mode is not clear. Through first-principles calculations, we find that there is a novel polar phonon mode on the surface layers of the STO substrate, which does not exist in the STO crystals. The oxygen vacancies near the FeSe/STO interface drives the dispersion of this phonon mode to be flat and lowers its energy, whereas the charge transfer between STO substrate and FeSe monolayer further reduces its energy to 81 meV. This energy is in good agreement with the experimental value fitted by Lee et al. for the phonon mode responsible for the observed replica band separations and the increased superconducting gap. The oxygen-vacancy-induced flat and polar phonon mode provides clues for understanding the origin of high Tc superconductivity at the FeSe/STO interface.

Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers.

The kesterite-structured semiconductors Cu2ZnSnS4 and Cu2ZnSnSe4 are drawing considerable attention recently as the active layers in earth-abundant low-cost thin-film solar cells. The additional number of elements in these quaternary compounds, relative to binary and ternary semiconductors, results in increased flexibility in the material properties. Conversely, a large variety of intrinsic lattice defects can also be formed, which have important influence on their optical and electrical properties, and hence their photovoltaic performance. Experimental identification of these defects is currently limited due to poor sample quality. Here recent theoretical research on defect formation and ionization in kesterite materials is reviewed based on new systematic calculations, and compared with the better studied chalcopyrite materials CuGaSe2 and CuInSe2 . Four features are revealed and highlighted: (i) the strong phase-competition between the kesterites and the coexisting secondary compounds; (ii) the intrinsic p-type conductivity determined by the high population of acceptor CuZn antisites and Cu vacancies, and their dependence on the Cu/(Zn+Sn) and Zn/Sn ratio; (iii) the role of charge-compensated defect clusters such as [2CuZn +SnZn ], [VCu +ZnCu ] and [ZnSn +2ZnCu ] and their contribution to non-stoichiometry; (iv) the electron-trapping effect of the abundant [2CuZn +SnZn ] clusters, especially in Cu2ZnSnS4. The calculated properties explain the experimental observation that Cu poor and Zn rich conditions (Cu/(Zn+Sn) ≈ 0.8 and Zn/Sn ≈ 1.2) result in the highest solar cell efficiency, as well as suggesting an efficiency limitation in Cu2ZnSn(S,Se)4 cells when the S composition is high.

Composition- and band-gap-tunable synthesis of wurtzite-derived Cu2ZnSn(S(1-x)Se(x))4 nanocrystals: theoretical and experimental insights.

The wurtzite-derived Cu2ZnSn(S(1-x)Se(x))4 alloys are studied for the first time through combining theoretical calculations and experimental characterizations. Ab initio calculations predict that wurtzite-derived Cu2ZnSnS4 and Cu2ZnSnSe4 are highly miscible, and the band gaps of the mixed-anion alloys can be linearly tuned from 1.0 to 1.5 eV through changing the composition parameter x from 0 to 1. A synthetic procedure for the wurtzite-derived Cu2ZnSn(S(1-x)Se(x))4 alloy nanocrystals with tunable compositions has been developed. A linear tunable band-gap range of 0.5 eV is observed in the synthesized alloy nanocrystals, which shows good agreement with the ab initio calculations.