Ultra-narrow passband-tunable filter based on a high-Q silicon racetrack resonator.

An ultra-narrow narrow passband-tunable optical filter employing a high-Q silicon racetrack resonator is proposed and experimentally demonstrated on a SOI platform. The high-Q silicon racetrack resonator is realized by utilizing the multimode waveguide racetrack, and the Q factor is measured as high as 8.1×105. The structure of the device is based on a thermally tunable Mach-Zehnder interferometer coupled racetrack. The tunability of the bandwidth is realized by tuning the coupling coefficient between the racetrack resonator and the input or output ports. Finally, the bandwidth of the filter can be tuned from 1.92 to 11.00 pm (240 MHz to 1.375 GHz), and the free spectral range is about 0.28 nm (35 GHz), with the footprint of 0.21mm2.

Ultra-compact silicon mode-order converters based on dielectric slots.

Ultra-compact mode-order converters with dielectric slots are demonstrated on a silicon-on-insulator platform. We propose a mode converter that converts the TE0 mode into the TE1 mode with an ultra-small footprint of only 0.8×1.2µm2. The measured insertion loss is less than 1.2 dB from 1520 nm to 1570 nm. To reduce the insertion loss, we further optimize the structure and design two mode converters that convert the TE0 mode into the TE1 mode and the TE2 mode with footprints of 0.88×2.3µm2 and 1.4×2.4µm2, respectively. Their measured insertion losses are both less than 0.5 dB. Additionally, the proposed devices are cascadable and scalable for high-order mode conversion.

Single-resonance silicon nanobeam filter with an ultra-high thermo-optic tuning efficiency over a wide continuous tuning range.

Energy-efficient tunability is highly desired for silicon photonic devices. We demonstrate a thermo-optic tunable filter with an ultra-high tuning efficiency based on a suspended photonic crystal nanobeam cavity. Attributed to the ultra-small mode volume and free-standing waveguide structure, a tuning efficiency of 21 nm/mW is achieved over a wide single-resonance tuning range of ∼43.9 nm. The 10%-90% switching times are 67.0 µs and 68.8 µs for the rising edge and the falling edge, respectively. The demonstrated energy-efficient tunable device can find applications in reconfigurable photonic integrated circuits.

Layered ACO-OFDM for intensity-modulated direct-detection optical wireless transmission.

Layered asymmetrically clipped optical orthogonal frequency division multiplexing (ACO-OFDM) with high spectral efficiency is proposed in this paper for optical wireless transmission employing intensity modulation with direct detection. In contrast to the conventional ACO-OFDM, which only utilizes odd subcarriers for modulation, leading to an obvious spectral efficiency loss, in layered ACO-OFDM, the subcarriers are divided into different layers and modulated by different kinds of ACO-OFDM, which are combined for simultaneous transmission. In this way, more subcarriers are used for data transmission and the spectral efficiency is improved. An iterative receiver is also proposed for layered ACO-OFDM, where the negative clipping distortion of each layer is subtracted once it is detected so that the signals from different layers can be recovered. Theoretical analysis shows that the proposed scheme can improve the spectral efficiency by up to 2 times compared with conventional ACO-OFDM approaches with the same modulation order. Meanwhile, simulation results confirm a considerable signal-to-noise ratio gain over ACO-OFDM at the same spectral efficiency.

Monolithically integrated selectable repetition-rate laser diode source of picosecond optical pulses.

We describe the characterization of a monolithically integrated photonic device for short pulse generation featuring a mode-locked laser diode, a Mach-Zehnder modulator (MZM), and a semiconductor optical amplifier (SOA). The integrated device is designed for fabrication by a generic foundry scheme with a view to ease of design, testing, and manufacture. Trains of 6.8 ps pulses are generated at repetition rates that are electronically switchable from 14 GHz to 109 MHz. The SOA boosts the peak power by 7.4 dB, and the pulses are compressible to 2.4 ps by dispersion compensation using single-mode telecommunications fiber.

Monolithic integration of embedded III-V lasers on SOI.

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

Metamaterial-enabled arbitrary on-chip spatial mode manipulation.

On-chip spatial mode operation, represented as mode-division multiplexing (MDM), can support high-capacity data communications and promise superior performance in various systems and numerous applications from optical sensing to nonlinear and quantum optics. However, the scalability of state-of-the-art mode manipulation techniques is significantly hindered not only by the particular mode-order-oriented design strategy but also by the inherent limitations of possibly achievable mode orders. Recently, metamaterials capable of providing subwavelength-scale control of optical wavefronts have emerged as an attractive alternative to manipulate guided modes with compact footprints and broadband functionalities. Herein, we propose a universal yet efficient design framework based on the topological metamaterial building block (BB), enabling the excitation of arbitrary high-order spatial modes in silicon waveguides. By simply programming the layout of multiple fully etched dielectric metamaterial perturbations with predefined mathematical formulas, arbitrary high-order mode conversion and mode exchange can be simultaneously realized with uniform and competitive performance. The extraordinary scalability of the metamaterial BB frame is experimentally benchmarked by a record high-order mode operator up to the twentieth. As a proof of conceptual application, an 8-mode MDM data transmission of 28-GBaud 16-QAM optical signals is also verified with an aggregate data rate of 813 Gb/s (7% FEC). This user-friendly metamaterial BB concept marks a quintessential breakthrough for comprehensive manipulation of spatial light on-chip by breaking the long-standing shackles on the scalability, which may open up fascinating opportunities for complex photonic functionalities previously inaccessible.

Nonlinear co-generation of graphene plasmons for optoelectronic logic operations.

Surface plasmons in graphene provide a compelling strategy for advanced photonic technologies thanks to their tight confinement, fast response and tunability. Recent advances in the field of all-optical generation of graphene's plasmons in planar waveguides offer a promising method for high-speed signal processing in nanoscale integrated optoelectronic devices. Here, we use two counter propagating frequency combs with temporally synchronized pulses to demonstrate deterministic all-optical generation and electrical control of multiple plasmon polaritons, excited via difference frequency generation (DFG). Electrical tuning of a hybrid graphene-fibre device offers a precise control over the DFG phase-matching, leading to tunable responses of the graphene's plasmons at different frequencies across a broadband (0 ~ 50 THz) and provides a powerful tool for high-speed logic operations. Our results offer insights for plasmonics on hybrid photonic devices based on layered materials and pave the way to high-speed integrated optoelectronic computing circuits.

Ultracompact bandwidth-tunable filter based on subwavelength grating-assisted contra-directional couplers.

An ultracompact, bandwidth-tunable filter has been demonstrated using a silicon-on-insulator (SOI) wafer. The device is based on cascaded grating-assisted contra-directional couplers (GACDCs). It also involves the use of a subwavelength grating (SWG) structure. By heating one of the heaters on GACDCs, a bandwidth tunability of ∼6 nm is achieved. Owing to the benefit of having a large coupling coefficient between SWG and strip waveguides, the length of the coupling region is only 100 µm. Moreover, the combination of the curved SWG and the tapered strip waveguides effectively suppresses the sidelobes. The filter possesses features of simultaneous wavelength tuning with no free spectral range (FSR) limitation. A maximum bandwidth of 10 nm was experimentally measured with a high out-of-band contrast of 25 dB. Similarly, the minimum bandwidth recorded is 4 nm with an out-of-band contrast of 15 dB.