Electrically tunable anomalous Hall effect in Pt thin films.

Pt is often considered to be an exchange-enhanced paramagnetic material, in which the Stoner criterion for ferromagnetism is nearly satisfied and, thus, external stimuli may induce unconventional magnetic characteristics. We report that a nonmagnetic perturbation in the form of a gate voltage applied via an ionic liquid induces an anomalous Hall effect (AHE) in Pt thin films, which resembles the AHE induced by the contact to Bi-doped yttrium iron garnet. Analysis of detailed temperature and magnetic field experiments indicates that the evolution of the AHE with temperature can be explained in terms of large local moments; the applied electric field induces magnetic moments as large as ~10 µ(B) that follow the Langevin function.

High Jc and low anisotropy of hydrogen doped NdFeAsO superconducting thin film.

The recent realisations of hydrogen doped LnFeAsO (Ln = Nd and Sm) superconducting epitaxial thin films call for further investigation of their structural and electrical transport properties. Here, we report on the microstructure of a NdFeAs(O,H) epitaxial thin film and its temperature, field, and orientation dependencies of the resistivity and the critical current density Jc. The superconducting transition temperature Tc is comparable to NdFeAs(O,F). Transmission electron microscopy investigation supported that hydrogen is homogenously substituted for oxygen. A high self-field Jc of over 10 MA/cm2 was recorded at 5 K, which is likely to be caused by a short London penetration depth. The anisotropic Ginzburg-Landau scaling for the angle dependence of Jc yielded temperature-dependent scaling parameters γJ that decreased from 1.6 at 30 K to 1.3 at 5 K. This is opposite to the behaviour of NdFeAs(O,F). Additionally, γJ of NdFeAs(O,H) is smaller than that of NdFeAs(O,F). Our results indicate that heavily electron doping by means of hydrogen substitution for oxygen in LnFeAsO is highly beneficial for achieving high Jc with low anisotropy without compromising Tc, which is favourable for high-field magnet applications.

Microscopic origin of highly enhanced current carrying capabilities of thin NdFeAs(O,F) films.

Fe-based superconductors present a large variety of compounds whose physical properties strongly depend on the crystal structure and chemical composition. Among them, the so-called 1111 compounds show the highest critical temperature T c in the bulk form. Here we demonstrate the realization of excellent superconducting properties in NdFeAs(O1-x F x ). We systematically investigated the correlation between the microstructure at the nanoscale and superconductivity in an epitaxial 22 nm NdFeAs(O1-x F x ) thin film on a MgO single crystalline substrate (T c = 44.7 K). Atomic resolution analysis of the microstructure by transmission electron microscopy and atom probe tomography identified several defects and other inhomogeneities at the nanoscale that can act as extrinsic pinning centers. X-Ray diffraction and transmission electron microscopy displayed a broad variation of the a-axis lattice parameter either due to a partially strained layer at the interface to the substrate, high local strain at dislocation arrays, mosaicity, or due to composition variation within the film. The electrical transport properties are substantially affected by intrinsic pinning and a matching field corresponding to the film thickness and associated with the Bean-Livingston surface barrier of the surfaces. The thin film showed a self-field critical current density J c(4.2 K) of ∼7.6 MA cm-2 and a record pinning force density of F p ≈ 1 TN m-3 near 35 T for H‖ab at 4.2 K. These investigations highlight the role of the microstructure in fine-tuning and possibly functionalizing the superconductivity of Fe-based superconductors.

Optical rectification effect in 1D metallic photonic crystal slabs with asymmetric unit cell.

Photo-induced voltage due to photon drag effect is investigated for metallic photonic crystal slabs (PCS) with symmetric and asymmetric unit cells. In the symmetric structure, the signal is antisymmetric as a function of the incident angle, while in the asymmetric structure it is asymmetric. When the laser beam is normally incident to the sample, the photovoltage is observed only for PCS with asymmetric unit cells and its laser wavelength dependence is readily described in terms of uneven diffraction. The phenomenon can be referred to as optical rectification due to photonic scale asymmetry.

Gate control of percolative conduction in strongly correlated manganite films.

Gate control of percolative conduction in a phase-separated manganite system is demonstrated in a field-effect transistor geometry, resulting in ambipolar switching from a metallic state to an insulating state.

Transverse photovoltage induced by circularly polarized light.

We discovered that when circularly polarized light is obliquely incident on a two-dimensional metallic photonic crystal slab, electrical voltage is induced perpendicular to the incident plane. The sign of the signal is reversed by changing the sense of polarization or incident angle. The origin of this transverse photoinduced voltage is explained in terms of the force proportional to the light intensity induced by the asymmetry, which is brought about by the angular momentum of the incident light, along with the modification of local near-surface electromagnetic fields in the slab and field enhancement due to surface plasmon resonance.