Vertically stacked quantum dot pairs fabricated by nanohole filling.

Strain-free, vertically coupled GaAs quantum dots (QDs) with an ultra-low density below 1 × 10(7) cm(-2) are fabricated by filling of self-assembled nanoholes with a GaAs/AlGaAs/GaAs layer sequence. The sizes of the two QDs, forming a QD pair (QDP), as well as the AlGaAs tunnel-barrier between the dots are tuned independently. We present atomic force microscopy studies of the QDP formation steps. We have performed photoluminescence studies of single QDPs with varied dot size and tunnel-barrier thickness. The data indicate non-resonant tunnelling between the dots. Furthermore, we apply the quantum confined Stark effect to tune the photoluminescence energy by up to 25 meV.

Thermal conductance of ballistic point contacts.

We study the thermal conductance of ballistic point contacts. These contacts are realized as few nanometer long pillars in so-called air-gap heterostructures (AGHs). The pillar length is orders of magnitude smaller than the mean free path of the phonons up to room temperature. Because of the small dimension and the low density of the pillars, the thermal conductance of the AGHs is several orders of magnitude reduced in comparison to bulk structures. The measurement results are in quantitative agreement with a simple model that is based on the Boltzmann transport equation.

Confinement and inhomogeneous broadening effects in the quantum oscillatory magnetization of quantum dot ensembles.

We report on the magnetization of ensembles of etched quantum dots with a lateral diameter of 460 nm, which we prepared from InGaAs/InP heterostructures. The quantum dots exhibit 1/B-periodic de-Haas-van-Alphen-type oscillations in the magnetization M(B) for external magnetic fields B > 2 T, measured by torque magnetometry at 0.3 K. We compare the experimental data to model calculations assuming different confinement potentials and including ensemble broadening effects. The comparison shows that a hard wall potential with an edge depletion width of 100 nm explains the magnetic behavior. Beating patterns induced by Rashba spin-orbit interaction (SOI) as measured in unpatterned and nanopatterned InGaAs/InP heterostructures are not observed for the quantum dots. From our model we predict that signatures of SOI in the magnetization could be observed in larger dots in tilted magnetic fields.

Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes.

We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22-40µeV and no dependence on QD size. Furthermore, we find a decrease in exciton-biexciton splitting with increasing QD size.

Resonant Raman transitions into singlet and triplet states in InGaAs quantum dots containing two electrons.

Semiconductor quantum dots containing two electrons, also called artificial quantum-dot helium atoms, are model structures to investigate the most fundamental many-particle states induced by Coulomb interaction and the Pauli exclusion principle. Here, electronic excitations in quantum-dot helium are investigated by resonant Raman spectroscopy in magnetic fields. We observe transitions from the ground state into the excited singlet state and, in the depolarized Raman configuration which allows spin-flip processes, into the triplet state.

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes.

Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.

Optical microcavities formed by semiconductor microtubes using a bottlelike geometry.

We report on the realization of optical microtube resonators with a bottlelike geometry. The measured eigenenergies and the measured axial field distributions of the modes can be described by a straight and intuitive model using an adiabatic separation of the circulating and the axial propagation. The dispersion of the axial mode energies follows a photonic quasi-Schrödinger equation including a quasipotential which can be determined for the actual geometry of the microtube in a precise and simple way. We show that tailoring the geometry of the microtube bottle resonators enables the realization of a wide variety of mode distributions and dispersion relations.

Optical modes in semiconductor microtube ring resonators.

We demonstrate optical modes in InGaAs/GaAs microtubes acting as optical ring resonators. Self-supporting microtubes were fabricated by optical lithography and wet-etching processes utilizing the self-rolling mechanism of strained bilayers. The optical modes were probed by the photoluminescence of InAs quantum dots embedded in the tube's wall. In this novel microtube ring resonator we find a spectrum of sharp modes. They are in very good agreement with the theoretical results for a closed thin dielectric waveguide.

Quantized dispersion of two-dimensional magnetoplasmons detected by photoconductivity spectroscopy.

We find that the long-wavelength magnetoplasmon, resistively detected by photoconductivity spectroscopy in high-mobility two-dimensional electron systems, deviates from its well-known semiclassical nature as uncovered in conventional absorption experiments. A clear filling-factor dependent plateau-type dispersion is observed that reveals a so far unknown relation between the magnetoplasmon and the quantum Hall effect.

Spectroscopy of few-electron collective excitations in charge-tunable artificial atoms.

We report the investigation of electronic excitations in InGaAs self-assembled quantum dots using resonant inelastic light scattering. The dots can be charged via a gate by N=1, em leader,6 electrons. We observe excitations, which are identified as transitions of electrons, predominantly from the s to the p shell (s-p transitions) of the quasiatoms. We find that the s-p transition energy decreases and the observed band broadens, when the p shell is filled with 1 to 4 electrons. By a theoretical model, which takes into account the full Coulomb interaction in the few-electron artificial atom, we can confirm the experimental results to be an effect of the Coulomb interaction in the quantum dot.

Optical probing of a fractionally charged quasihole in an incompressible liquid.

In photoluminescence spectroscopy of a low-mobility two-dimensional electron gas subjected to a quantizing magnetic field, we observe an anomaly around nu=1 / 3 at a very low temperature (0.1 K) and an intermediate electron density (0.9 x 10(11) cm(-2)). The anomaly is explained as due to perturbation of the incompressible liquid at the Laughlin state due to close proximity of a localized charged exciton which creates a fractionally charged quasihole in the liquid. The anomaly of approximately 2 meV can be destroyed by applying a small thermal energy of approximately 0.2 meV that is enough to close the quasihole energy gap.