De- and Rearomatisation of Pyridine in Silylene Chemistry.

Traditional methods relying on metal-ligand cooperation for activating pyridine bonds in de- and rearomatisation are being challenged by the abundant metal-free element species as alternatives. Here, we investigate the de/re-aromatisation of pyridine facilitated by pyridylamino-functionalised silylene reactions with ketones and ketene. The reactivity outcome is highly dependent on the substituents on the ketones. By carefully tuning the steric demand of the ketone, each intermediate of the reaction sequence could be isolated. At room temperature, benzophenone and acetophenone substrates led to dearomatisation of the pyridine moiety, with the case of acetophenone showing an intermediate silaoxirane preceding dearomatisation. However, when subjected to acetone or diphenylketene, only silaoxiranes were formed without dearomatisation of the pyridine moiety. Notably, only benzophenone-derived dearomatised species demonstrate rearomatisation upon heating. Furthermore, the reduced steric bulk of the ketene facilitated further ring expansion with another equivalent of the substrate, forming sila-1,3-dioxolanes. Both steric hindrance and aromatic groups collectively influence the dearomatisation of pyridine in pyridylaminosilylene reactions.

Synthesis and Reactivity of Base-Stabilized and Base-Free Silaimidoyl Bromides.

The reactivity of the base-free bromosilylene dtbpCbzSiBr (dtbpCbz = 1,8-bis(3,5-di-tert-butylphenyl)-3,6-di-tert-butylcarbazolyl) toward carbodiimides and azides was studied in order to generate base-stabilized and base-free silaimidoyl bromides, respectively. The steric bulk of carbodiimides and azides allows control over the reactivity. While with small substituents such as tert-butyl or adamantyl, the reactions cannot be stopped at the Si═N stage, with large substituents, they lead to C-H activation in the product. The Dipp substituent (Dipp = 2,6-diisopropylphenyl) allowed the isolation of the silaimidoyl bromide dtbpCbzSi(Br)NDipp and its CNDipp-coordinated analogue. The reactivity of the Si═N double bond species was studied with respect to cycloaddition and donor exchange reactions.

Silylenes with a Small Chalcogenide Substituent: Tuning Frontier Orbital Energies from O to Te.

The general synthesis of heteroleptic acyclic silylenes with a bulky carbazolyl substituent (dtbpCbz) is detailed and a series of compounds with a chalcogenide substituent of the type [(dtbpCbz)SiE16R] (E16R=OtBu, SEt, SePh, TePh) is reported. With the bulky carbazolyl substituent present, the chalcogenide moiety can be very small, as is shown by incorporating groups as small as ethyl, phenyl or tert-butyl. For the first time, the electronic properties of the silylene can be tuned along a complete series of chalcogenide substituents. The effects are clearly visible in the NMR and UV/Vis spectra, and were rationalised by DFT computations. The reactivity of the heaviest chalcogenide-substituted silylenes was probed by reactions with trimethylphosphine selenide and the terphenyl azide TerN3 (Ter=2,6-dimesitylphenyl).

Reactivities of phosphaalkynes towards diverse bis-silylenes.

Bis-silylenes do not only act as strong chelating σ-donor ligands, but also exhibit cooperative behaviour in the activation of small molecules. Three different P-Si containing molecules were prepared from the reaction between tBuCP and different bis-silylenes, which are bridged by ferrocenediyl, diaminobenzene, or o-carborane.

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers.

Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects the design of electronic devices. Magnetron sputtering is a novel approach for cost-effective epitaxy of III-nitrides nearing the technological maturity needed for device production; therefore, control of film polarity is an important technological milestone. In this study, we show the impact of Al seeding on the AlN/Si interface and resulting changes in crystal quality, film morphology, and polarity of GaN/AlN stacks grown by magnetron sputter epitaxy. X-ray diffraction measurements demonstrate the improvement of the crystal quality of the AlN and subsequently the GaN film by the Al seeding. Nanoscale structural and chemical investigations using scanning transmission electron microscopy reveal the inversion of the AlN film polarity. It is proposed that N-polar growth induced by Al seeding is related to the formation of a polycrystalline oxygen-rich AlN interlayer partially capped by an atomically thin Si-rich layer at the AlN/Si interface. Complementary aqueous KOH etch studies of GaN/AlN stacks demonstrate that purely metal-polar and N-polar layers can be grown on a macroscopic scale by controlling the amount of Al seeding.