RESUMO
Diphenylanthracene (DPA) and its derivatives are promising semiconducting materials for p-type organic-field-effect transistors (OFETs). In this study, to develop n-type semiconducting materials with an anthracene core, pentafluorobenzene was introduced into anthracene by C-H direct arylation, enabling the synthesis of various bis(pentafluorophenyl)anthracene (DPA-F) derivatives. The high reactivity of the pentafluorobenzene C-H bond allows direct arylation for synthesizing DPA-F derivatives in a single step. The introduction of strong electron-withdrawing pentafluorophenyl groups provides the anthracene derivatives with n-type semiconducting properties, in contrast to the p-type properties of the parent DPAs. Among the synthesized compounds, 2,6-bis(pentafluorophenyl)anthracene shows a high electron mobility of 0.12±0.02â cm2 /Vs and an on/off ratio>106 in OFETs. The high crystallinity results in the smooth electron transport. This study provides a facile synthetic method for n-type semiconducting materials and insights into the molecular design of the positional effects of aromatic substituents on anthracene.
RESUMO
Neutron scattering experiments have been performed to elucidate magnetic properties of the quasicrystal approximant Au70Si17Tb13, consisting of icosahedral spin clusters in a body-centered-cubic lattice. Bulk magnetic measurements performed on the single crystalline sample unambiguously confirm long-range ordering at T C = 11.6 ± 1 K. In contrast to the simple ferromagnetic response in the bulk measurements, single crystal neutron diffraction confirms a formation of intriguing non-collinear and non-coplanar magnetic order. The magnetic moment direction was found to be nearly tangential to the icosahedral cluster surface in the local mirror plane, which is quite similar to that recently found in the antiferromagnetic quasicrystal approximant Au72Al14Tb14. Inelastic neutron scattering on the powdered sample exhibits a very broad peak centered at âω ≃ 4 meV. The observed inelastic spectrum was explained by the crystalline-electric-field model taking account of the chemical disorder at the fractional Au/Si sites. The resulting averaged anisotropy axis for the crystalline-electric-field ground state is consistent with the ordered moment direction determined in the magnetic structure analysis, confirming that the non-coplanar magnetic order is stabilized by the local uniaxial anisotropy.
RESUMO
Shape memory effect, the ability to recover a pre-deformed shape on heating, results from a reversible martensitic transformation between austenite and martensite phases. Here, we demonstrate a strategy of designing high-entropy alloys (HEAs) with high-temperature shape memory effect in the CrMnFeCoNi alloy system. First, we calculate the difference in Gibbs free energy between face-centered-cubic (FCC) and hexagonal-close-packed (HCP) phases, and find a substantial increase in thermodynamic equilibrium temperature between the FCC and HCP phases through composition tuning, leading to thermally- and stress-induced martensitic transformations. As a consequence, the shape recovery temperature in non-equiatomic CrMnFeCoNi alloys can be increased to 698 K, which is much higher than that of conventional shape memory alloys (SMAs) and comparable to that of B2-based multi-component SMAs containing noble metals (Pd, Pt, etc.) or refractory metals (Zr, Hf, etc.). This result opens a vast field of applications of HEAs as a novel class of cost-effective high-temperature SMAs.