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Self-organizing patterns with micrometre-scale features are promising for the large-area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. Here, we report an approach to form periodic patterns in single layers of organic semiconductors by a simple annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features initially form in the amorphous region within a micrometre of the crystal growth front, probably due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned from 800 nm to 2,400 nm by varying the film thickness and annealing temperature, and millimetre-scale domain sizes are obtained. This phenomenon could be exploited for the self-assembly of microstructured organic optoelectronic devices.
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We describe here three alkynyl substituted naphthalenes that display promising luminescence characteristics. Each compound is easily and efficiently synthesized in three steps by capitalizing on the hexadehydro-Diels-Alder (HDDA) cycloisomerization reaction in which an intermediate benzyne is captured by tetraphenylcyclopentadienone, a classical trap for benzyne itself. These compounds luminesce in the deep blue when stimulated either optically (i.e., photoluminescence in both solution and solid films) or electrically [in a light-emitting diode (LED)]. The photophysical properties are relatively insensitive to the electronic nature of the substituents (H, OMe, CO2Me) that define these otherwise identical compounds. Overall, our observations suggest that the twisted nature of the five adjacent aryl groups serves to minimize the intermolecular interaction between core naphthalene units in different sample morphologies. These compounds represent promising leads for the identification of others of value as the emissive component of organic LEDs (OLEDs).
Assuntos
Alcinos/química , Naftalenos/química , Benzeno/química , Cor , Cicloexenos/química , IsomerismoRESUMO
Vapor deposited thin films of copper phthalocyanine (CuPc) were investigated using transient absorption spectroscopy. Exciton-exciton annihilation dominated the kinetics at high exciton densities. When annihilation was minimized, the observed lifetime was measured to be 8.6 ± 0.6 ns, which is over an order of magnitude longer than previous reports. In comparison with metal free phthalocyanine (H2Pc), the data show evidence that the presence of copper induces an ultrafast relaxation process taking place on the ca. 500 fs timescale. By comparison to recent time-resolved photoemission studies, this is assigned as ultrafast intersystem crossing. As the intersystem crossing occurs ca. 10(4) times faster than lifetime decay, it is likely that triplets are the dominant excitons in vapor deposited CuPc films. The exciton lifetime of CuPc thin films is ca. 35 times longer than H2Pc thin films, while the diffusion lengths reported in the literature are typically quite similar for the two materials. These findings suggest that despite appearing to be similar materials at first glance, CuPc and H2Pc may transport energy in dramatically different ways. This has important implications on the design and mechanistic understanding of devices where phthalocyanines are used as an excitonic material.
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Photoconversion in planar-heterojunction organic photovoltaic cells (OPVs) is limited by a short exciton diffusion length (L(D)) that restricts migration to the dissociating electron donor/acceptor interface. Consequently, bulk heterojunctions are often used to realize high efficiency as these structures reduce the distance an exciton must travel to be dissociated. Here, we present an alternative approach that seeks to directly engineer L(D) by optimizing the intermolecular separation and consequently, the photophysical parameters responsible for excitonic energy transfer. By diluting the electron donor boron subphthalocyanine chloride into a wide-energy-gap host material, we optimize the degree of interaction between donor molecules and observe a ~50% increase in L(D). Using this approach, we construct planar-heterojunction OPVs with a power conversion efficiency of (4.4 ± 0.3)%, > 30% larger than the case of optimized devices containing an undiluted donor layer. The underlying correlation between L(D) and the degree of molecular interaction has wide implications for the design of both OPV active materials and device architectures.
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Direct observation of an unexpected product from excited state fusion of two excited triplet states in platinum octaethylporphyrin is reported. Transient spectroscopy was used to identify the product as a metal centered (d, d) state that decays slowly compared with the rate of fusion. The reaction was demonstrated to be second order with a rate coefficient of k(TTF) = (5.4 ± 0.4) × 10(-10) cm(3) · s(-1). The results contrast with the common assumption that fusion proceeds directly to annihilation via rapid non-radiative deactivation of the products. Following visible photo-excitation, the fusion process results in energetic upconversion of the incident photons stored in the higher energy (d, d) state at irradiances below the threshold for multi-photon absorption.
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We present an all-gas-phase approach for the fabrication of nanocrystal-based light-emitting devices. In a single reactor, silicon nanocrystals are synthesized, surface-functionalized, and deposited onto substrates precoated with a transparent electrode. Devices are completed by evaporation of a top metal electrode. The devices exhibit electroluminescence centered at a wavelength of λ = 836 nm with a peak external quantum efficiency exceeding 0.02%. This all-gas-phase approach permits controlled deposition of dense, functional nanocrystal films suitable for application in electronic devices.
Assuntos
Cristalização/métodos , Gases/química , Iluminação/instrumentação , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Semicondutores , Silício/química , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
Polar molecules with appreciable permanent dipole moments (PDMs) are widely used as the electron transport layer (ETL) in organic light-emitting devices (OLEDs). When the PDMs spontaneously align, a macroscopic polarization field can be observed, a phenomenon known as spontaneous orientation polarization (SOP). The presence of SOP in the ETL induces considerable surface potential and charge accumulation that is capable of quenching excitons and reducing device efficiency. While prior work has shown that the degree of SOP is sensitive to film processing conditions, this work considers SOP formation by quantitatively treating the vapor-deposited film as a supercooled glass, in analogy to prior work on birefringence in organic thin films. Importantly, the impact of varying thin-film deposition rate and relative temperature is unified into a single framework, providing a useful tool to predict the SOP formation efficiency for a polar material, as well as in blends of polar materials. Finally, in situ photoluminescence characterization and efficiency measurements reveal that SOP-induced exciton-polaron quenching can be reduced through an appropriate choice of processing conditions, leading to enhanced OLED efficiency.
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We demonstrate an all-organic, one-dimensional photonic crystal tuned to the regime of strong exciton-photon coupling. The structure consists of a high index of refraction light-absorbing active layer periodically distributed in a low index of refraction nonabsorbing background medium. The strongly coupled state in this structure is shared between multiple active layers separated by distances longer than the wavelength of light in the structure. In order to investigate the potential for long-range energy transfer, photon-mediated exciton hybridization is demonstrated between multiple absorbing species spatially separated in the photonic crystal.
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We demonstrate highly efficient electroluminescence from silicon nanocrystals (SiNCs). In an optimized nanocrystal-organic light-emitting device, peak external quantum efficiencies of up to 8.6% can be realized with emission originating solely from the SiNCs. The high efficiencies reported here demonstrate for the first time that with an appropriate choice of device architecture it is possible to achieve highly efficient electroluminescence from nanocrystals of an indirect band gap semiconductor.
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We demonstrate hybrid inorganic-organic light-emitting devices with peak electroluminescence (EL) at a wavelength of 868 nm using silicon nanocrystals (SiNCs). An external quantum efficiency of 0.6% is realized in the forward-emitted direction, with emission originating primarily from the SiNCs. Microscopic characterization indicates that complete coverage of the SiNCs on the conjugated polymer hole-transporting layer is required to observe efficient EL.
Assuntos
Raios Infravermelhos , Medições Luminescentes/métodos , Nanoestruturas/química , Nanotecnologia/métodos , Silício/química , Medições Luminescentes/instrumentação , Nanotecnologia/instrumentação , Tamanho da Partícula , Pontos Quânticos , Propriedades de SuperfícieRESUMO
Probing triplet transport in singlet fission materials can be challenging due to the presence of multiple diffusing species. We present a device-based method to measure the intrinsic triplet diffusion length (LD) in organic semiconductor thin films exhibiting singlet fission. Triplet states are optically injected into the singlet fission material of interest via energy transfer from an adjacent thin film characterized by strong spin-orbit coupling. Injected triplets migrate through the full thickness of the material before undergoing dissociation at a donor-acceptor interface. By modeling the ratio of injector and acceptor photocurrent as a function of layer thickness, the triplet LD is extracted separate from processes of unknown efficiency including singlet fission and diffusion. In considering three archetypical fission systems, a wide range is found for the triplet LD, ranging from 3.3 ± 0.4 nm for 5,12-bis((triisopropylsilyl)ethynyl)tetracene to 17.1 ± 1.3 nm for pentacene and 32.1 ± 2.6 nm for tetracene.
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Charge-transfer (CT) states formed at organic donor-acceptor (D-A) semiconductor heterojunctions play a critical role in optoelectronic devices. While mobile, their migration has not been extensively characterized. In addition, the factors impacting the CT state diffusion length (LD) have not been elucidated. Here, CT state LD is measured by using photoluminescence quenching for several D-A mixtures, with migration occurring along the bulk heterojunction. All D-A pairings considered yield a similar LD â¼ 5 nm in equal mixtures despite variations in the CT state energy and the constituent molecular structures. The CT state LD varies strongly with mixture composition and is well-correlated to the slowest charge carrier mobility, suggesting a direct method to tune CT state transport. These findings may be applied to elucidate the role of CT state migration in organic photovoltaic and light-emitting devices as well as to broadly explain the transport of interfacial excited states along inorganic and hybrid organic-inorganic heterojunctions.
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Using a pulsed-beam transmission electron microscope, we discover a reduction in damage to methylammonium lead iodide (MAPbI3) as compared to conventional beams delivered at the same dose rates. For rates as low as 0.001 e·Å-2·s-1, we find up to a 17% reduction in damage at a total dose of 10 e·Å-2. We systematically study the effects of number of electrons in each pulse and the duration between pulse arrival. Damage increases for both, though the number of electrons per pulse has a larger effect. A crossover is identified, where a pulsed beam causes more damage than a conventional one. Although qualitatively similar to previous findings, the degree to which damage is reduced in MAPbI3 is less than that observed for other materials (e.g., C36H74), supporting the hypothesis that the effects are material- and damage-mechanism-dependent. Despite this, the observation here of damage reduction for relatively large electron packets (up to 200 electrons per pulse) suggests that MAPbI3 is in fact less susceptible to irradiation than C36H74, which may be related to reported self-healing effects. This work provides insights into damage processes and durability in hybrid perovskites and also illustrates the viability of using pulsed-beam TEM to explore the associated molecular-level routes to degradation, analogous to laser-accelerated energetic pulsed electron beams and the study of damage to biomolecules, cells, and tissues in radiobiology.
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The efficiency of organic light-emitting devices (OLEDs) is often limited by roll-off, where efficiency decreases with increasing bias. In most OLEDs, roll-off primarily occurs due to exciton quenching, which is commonly assumed to be active only above device turn-on. Below turn-on, exciton and charge carrier densities are often presumed to be too small to cause quenching. Using lock-in detection of photoluminescence, we find that this assumption is not generally valid; luminescence can be quenched by >20% at biases below turn-on. We show that this low-bias quenching is due to hole accumulation induced by intrinsic polarization of the electron transport layer (ETL). Further, we demonstrate that selection of nonpolar ETLs or heating during deposition minimizes these losses, leading to efficiency enhancements of >15%. These results reveal design rules to optimize efficiency, clarify how ultrastable glasses improve OLED performance, and demonstrate the importance of quantifying exciton quenching at low bias.
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Organic photovoltaic cells are partiuclarly sensitive to exciton harvesting and are thus, a useful platform for the characterization of exciton diffusion. While device photocurrent spectroscopy can be used to extract the exciton diffusion length, this method is frequently limited by unknown interfacial recombination losses. We resolve this limitation and demonstrate a general, device-based photocurrent-ratio measurement to extract the intrinsic diffusion length. Since interfacial losses are not active layer specific, a ratio of the donor- and acceptor-material internal quantum efficiencies cancels this quantity. We further show that this measurement permits extraction of additional device-relevant information regarding exciton relaxation and charge separation processes. The generality of this method is demonstrated by measuring exciton transport for both luminescent and dark materials, as well as for small molecule and polymer active materials and semiconductor quantum dots. Thus, we demonstrate a broadly applicable device-based methodology to probe the intrinsic active material exciton diffusion length.
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Searching for alternatives to lead-containing metal halide perovskites, we explored the properties of indium-based inorganic double perovskites Cs2InMX6 with M = Cu, Ag, Au and X = Cl, Br, I, and of its organic-inorganic hybrid derivative MA2InCuCl6 (MA = CH3NH3+) using computation within Kohn-Sham density functional theory. Among these compounds, Cs2InCuCl6 and MA2InCuCl6 were found to be potentially promising candidates for solar cells. Calculations with different functionals provided the direct band gap of Cs2InCuCl6 between 1.05 and 1.73 eV. In contrast, MA2InCuCl6 exhibits an indirect band gap between 1.31 and 2.09 eV depending on the choice of exchange-correlation functional. Cs2InCuCl6 exhibits a much higher absorption coefficient than that calculated for c-Si and CdTe, common semiconductors for solar cells. Even MA2InCuCl6 is predicted to have a higher absorption coefficient than c-Si and CdTe across the visible spectrum despite the fact that it is an indirect band gap material. The intrinsic charge carrier mobilities for Cs2InCuCl6 along the L-Γ path are predicted to be comparable to those for MAPbI3. Finally, we carried out calculations of the band edge positions for MA2InCuCl6 and Cs2InCuCl6 to offer guidance for solar cell heterojunction design and optimization. We conclude that Cs2InCuCl6 and MA2InCuCl6 are promising semiconductors for photovoltaic and optoelectronic applications.
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Degradation in organic light-emitting devices (OLEDs) is generally driven by reactions involving excitons and polarons. Accordingly, a common design strategy to improve OLED lifetime is to reduce the density of these species by engineering an emissive layer architecture to achieve a broad exciton recombination zone. Here, the effect of exciton density on device degradation is analyzed in a mixed host emissive layer (M-EML) architecture which exhibits a broad recombination zone. To gain further insight into the dominant degradation mechanism, losses in the exciton formation efficiency and photoluminescence (PL) efficiency are decoupled by tracking the emissive layer PL during device degradation. By varying the starting luminance and M-EML thickness, the rate of PL degradation is found to depend strongly on recombination zone width and hence exciton density. In contrast, losses in the exciton formation depend only weakly on the recombination zone, and thus may originate outside of the emissive layer. These results suggest that the lifetime enhancement observed in the M-EML architectures reflects a reduction in the rate of PL degradation. Moreover, the varying roles of excitons and polarons in degrading the PL and exciton formation efficiencies suggest that kinetically distinct pathways drive OLED degradation and that a single degradation mechanism cannot be assumed when attempting to model the device lifetime. This work highlights the potential to extract fundamental insight into OLED degradation by tracking the emissive layer PL during lifetime testing, while also enabling diagnostic tests on the root causes of device instability.
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The migration of weakly and non-luminescent (dark) excitons remains an understudied subset of exciton dynamics in molecular thin films. Inaccessible via photoluminescence, these states are often probed using photocurrent methods that require efficient charge collection. Here we probe exciton harvesting in both luminescent and dark materials using a photovoltage-based technique. Transient photovoltage permits a real-time measurement of the number of charges in an organic photovoltaic cell, while avoiding non-geminate recombination losses. The extracted exciton diffusion lengths are found to be similar to those determined using photocurrent. For the luminescent material boron subphthalocyanine chloride, the photovoltage determined diffusion length is less than that extracted from photoluminescence. This indicates that while photovoltage circumvents non-geminate losses, geminate recombination at the donor-acceptor interface remains the primary recombination pathway. Photovoltage thus offers a general approach for extracting a device-relevant diffusion length, while also providing insight in to the dominant carrier recombination pathways.
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We report a promising set of donor-acceptor-acceptor (D-A-A) electron-donor materials based on coplanar thieno[3,2-b]/[2,3-b]indole, benzo[c][1,2,5]thiadiazole, and dicyanovinylene, which are found to show broadband absorption with high extinction coefficients. The role of the regioisomeric electron-donating thienoindole moiety on the physical and structural properties is examined. Bulk heterojunction (BHJ) organic photovoltaic cells (OPVs) based on the thieno[2,3-b]indole-based electron donor NTU-2, using C70 as an electron acceptor, show a champion power conversion efficiency of 5.2% under AM 1.5G solar simulated illumination. This efficiency is limited by a low fill factor (FF), as has previously been the case in D-A-A systems. In order to identify the origin of the limited FF, further insight into donor layer charge-transport behavior is realized by examining planar heterojunction OPVs, with emphasis on the evolution of film morphology with thermal annealing. Compared to as-deposited OPVs that exhibit insufficient donor crystallinity, crystalline OPVs based on annealed thin films show an increase in the short-circuit current density, FF, and power conversion efficiency. These results suggest that that the crystallization of D-A-A molecules might not be realized spontaneously at room temperature and that further processing is needed to realize efficient charge transport in these materials.