RESUMO
We demonstrate that an intercalated Co atom in superconductor NbSe2 could control the magnetic interaction between the adsorbed magnetic molecule of TbPc2 and the NbSe2 substrate. An intercalated Co atom enhances the magnetic interaction between the NbSe2 and the TbPc2 spin to cause Kondo resonance at the TbPc2 position, a spin-singlet state formed by the itinerary electron. By applying a surface-normal magnetic field, we change the molecule's spin direction from the initial one directed to the Co atom to the surface normal. The change appears as a split Kondo resonance at the TbPc2, one of which is enhanced at the Tb site, which disappears when the outer magnetic field normal to the surface is applied and never appears, even if we return B to 0 T. The phenomenon suggests that the intercalated magnetic atoms can control the magnetic interaction between a magnetic molecule and the superconductor NbSe2.
RESUMO
We investigated the spin properties of the terbium phthalocyanine (TbPc) species adsorbed on the superconductor NbSe2 surface using scanning tunneling microscopy and spectroscopy. TbPc2 is a molecule in a class of single-molecule magnets (SMMs), and the use of superconductor electrodes attracts attention for the application to the devices using the spin degree of freedom. TbPc is a building block of TbPc2 and can reveal the spin component's behavior. In the experiment, TbPc species were placed on the surface of the superconductor NbSe2. We measured Yu-Shiba-Rusinov (YSR) states caused by the interaction between the superconducting state and magnetic impurity and inelastic tunneling spectroscopy (IETS) for the spin excitation, below 1 K. We also measured the Kondo state formed by the magnetic singlet formation. We detected the radical spin at the ligand position of the TbPc by the presence of the Kondo peak and demonstrated that the radical spin forms the YSR feature. In addition, the exchange interaction energy (Eex) between the spins of the radical ligand (Pc) and the center 4f metal atom (Tb3+) is determined by using the IETS technique. Eex is a critical parameter that determines the blocking temperature, below which the sample behaves as an SMM. IETS results show that the statistical distribution of Eex has peaked at 1.3, 1.6, and 1.9 meV. The energy range is comparable to the recent theoretical calculation result. In addition, we show that the energy variation is correlated with the bonding configuration of TbPc.
RESUMO
We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS2 channel when the channel part is exposed to Cl2 gas. The gas exposure and the electrical measurement of the MoS2 FET were executed with in situ ultrahigh-vacuum (UHV) conditions in which the surface analysis techniques were equipped. This makes it possible to detect how much sensitivity the MoS2 FET can provide and understand the surface properties. With the Cl2 gas exposure to the channel, the plot of the drain current versus the gate voltage (I d-V g curve) shifts monotonically toward the positive direction of V g, suggesting that the adsorbate acts as an electron acceptor. The I d-V g shifts are numerically estimated by measuring the onset of I d (threshold voltage, V th) and the mobility as a function of the dosing amounts of the Cl2 gas. The behaviors of both the V th shift and the mobility with the Cl2 dosing amount can be fitted with the Langmuir adsorption kinetics, which is typically seen in the uptake curve of molecule adsorption onto well-defined surfaces. This can be accounted for by a model where an impinging molecule occupies an empty site with a certain probability, and each adsorbate receives a certain amount of negative charge from the MoS2 surface up to the monolayer coverage. The charge transfer makes the V th shifts. In addition, the mobility is reduced by the enhancement of the Coulomb scattering for the electron flow in the MoS2 channel by the accumulated charge. From the thermal desorption spectroscopy (TDS) measurement and density functional theory (DFT) calculations, we concluded that the adsorbate that is responsible for the change of the FET property is the Cl atom that is dissociated from the Cl2 molecule. The monotonic shift of V th with the coverage suggests that the MoS2 device sensor has a good sensitivity to detect 10-3 monolayers (ML) of adsorption corresponding to the ppb level sensor with an activation time of 1 s.