Ultra-High-Efficiency Corrosion Protection of Metallic Surface Based on Thin and Dense Hexagonal Boron Nitride Coating Films.

Quest for ultrathin and highly effective anticorrosion coating films is critical for both fundamental community of materials science and industrial economics. A two-dimensional hexagonal boron nitride (h-BN) film is a newly developed effective anticorrosion material due to its superior impermeability, thermal stability, and chemical stability. However, research in growth and anticorrosion properties of large-area dense h-BN coating films still lies in its infancy. Here, we report on the synthesis of a large-area and continuous dense few-layer (∼4) h-BN coating film onto a metal surface by chemical vapor deposition (CVD) and its anticorrosion properties both in air and seawater environments. Cu coated in h-BN, which functions as an anticorrosive coating, exhibits an impressively reduced corrosion rate (CR) in a 3.5% NaCl solution (which mimics a seawater environment) when compared to bare Cu (approximately 27 times). At 200 °C, the h-BN coating can prevent Cu foil's surface from oxidizing, although doing so will cause a significant amount of oxide particles to simultaneously form on the bare Cu surface. In the meantime, the performance of the h-BN film remains unaltered after 100 days in an atmospheric environment, demonstrating the ultrahigh stability and corrosion resistance of the as-grown h-BN film.

Two-dimensional material assisted-growth strategy: new insights and opportunities.

The exploration and synthesis of novel materials are integral to scientific and technological progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is expected to play an important role in the application of industrialization and the information age, resulting from its excellent physical and chemical properties. Currently, researchers have effectively utilized a range of material synthesis techniques, including mechanical exfoliation, redox reactions, chemical vapor deposition, and chemical vapor transport, to fabricate two-dimensional materials. However, despite their rapid development, the widespread industrial application of 2D materials faces challenges due to demanding synthesis requirements and high costs. To address these challenges, assisted growth techniques such as salt-assisted, gas-assisted, organic-assisted, and template-assisted growth have emerged as promising approaches. Herein, this study gives a summary of important developments in recent years in the assisted growth synthesis of 2D materials. Additionally, it highlights the current difficulties and possible benefits of the assisted-growth approach for 2D materials. It also highlights novel avenues of development and presents opportunities for new lines of investigation.

Sensitivity of Sniffer Dogs for a Diagnosis of Parkinson's Disease: A Diagnostic Accuracy Study.

BACKGROUND: The diagnostic criteria for Parkinson's disease (PD) remain complex, which is especially problematic for nonmovement disorder experts. A test is required to establish a diagnosis of PD with improved accuracy and reproducibility. OBJECTIVE: The study aimed to investigate the sensitivity and specificity of tests using sniffer dogs to diagnose PD. METHODS: A prospective, diagnostic case-control study was conducted in four tertiary medical centers in China to evaluate the accuracy of sniffer dogs to distinguish between 109 clinically established medicated patients with PD, 654 subjects without PD, 37 drug-naïve patients with PD, and 185 non-PD controls. The primary outcomes were sensitivity and specificity of sniffer dog's identification. RESULTS: In the study with patients who were medicated, when two or all three sniffer dogs yielded positive detection results in a sample tested, the index test sensitivity, specificity, and positive and negative likelihood ratios were 91% (95% CI: 84%-96%), 95% (95% CI: 93%-97%), and 19.16 (95% CI: 13.52-27.16) and 0.10 (95% CI: 0.05-0.17), respectively. The corresponding sensitivity, specificity, and positive and negative likelihood ratios in patients who were drug-naïve were 89% (95% CI: 75%-96%), 86% (95% CI: 81%-91%), and 6.6 (95% CI: 4.51-9.66) and 0.13 (95% CI: 0.05-0.32), respectively. CONCLUSIONS: Tests using sniffer dogs may be a useful, noninvasive, fast, and cost-effective method to identify patients with PD in community screening and health prevention checkups as well as in neurological practice. © 2022 International Parkinson and Movement Disorder Society.

Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS2 /h-BN/Graphene Heterostructure.

With the rapid development of artificial intelligence and neural network computing, the requirement for information storage in computing is gradually increasing. Floating gate memories based on 2D materials has outstanding characteristics such as non-volatility, optical writing, and optical storage, suitable for application in photonic in-memory computing chips. Notably, the optoelectronic memory requires less optical writing energy, which means lower power consumption and greater storage levels. Here, the authors report an optoelectronic memory based on SnS2 /h-BN/graphene heterostructure with an extremely low photo-generated hole tunneling barrier of 0.23 eV. This non-volatile multibit floating gate memory shows a high switching ratio of 106 and a large memory window range of 64.8 V in the gate range ±40 V. And the memory device can achieve multilevel storage states of 50 under a low power light pulses of 0.32 nW and small light pulse width of 50 ms. Thanks to the Fowler-Nordheim tunneling of the photo-generated holes, the optical writing energy of the optoelectronic memory has been successfully reduced by one to three orders of magnitude compared to existing 2D materials-based systems.

Lowering the Contact Barriers of 2D Organic F16 CuPc Field-Effect Transistors by Introducing Van der Waals Contacts.

2D organic crystals exhibit efficient charge transport and field-effect characteristics, making them promising candidates for high-performance nanoelectronics. However, the strong Fermi level pinning (FLP) effect and large Schottky barrier between organic semiconductors and metals largely limit device performance. Herein, by carrying out temperature-dependent transport and Kelvin probe force microscopy measurements, it is demonstrated that the introducing of 2D metallic 1T-TaSe2 with matched band-alignment as electrodes for F16 CuPc nanoflake filed-effect transistors leads to enhanced field-effect characteristics, especially lowered Schottky barrier height and contact resistance at the contact and highly efficient charge transport within the channel, which are attributed to the significantly suppressed FLP effect and appropriate band alignment at the nonbonding van der Waals (vdW) hetero-interface. Moreover, by taking advantage of the improved contact behavior with 1T-TaSe2 contact, the optoelectronic performance of F16 CuPc nanoflake-based phototransistor is drastically improved, with a maximum photoresponsivity of 387 A W-1 and detectivity of 3.7 × 1014 Jones at quite a low Vds of 1 V, which is more competitive than those of the reported organic photodetectors and phototransistors. The work provides an avenue to improve the electrical and optoelectronic properties of 2D organic devices by introducing 2D metals with appropriate work function for vdW contacts.

High-responsivity photodetector based on scrolling monolayer MoS2hybridized with carbon quantum dots.

The monolayer MoS2based photodetectors have been widely investigated, which show limited photoelectric performances due to its low light absorption and uncontrollable adsorbates. In this paper, we present a MoS2-based hybrid nanoscrolls device, in which one-dimensional nanoscrollsof MoS2is hybridized with carbon quantum dots (CQDs). This device architecture effectively enhanced the photodetection performance. The photoresponsivity and detectivity values of MoS2/CQDs-NS photodetectors are respectively 1793 A W-1and 5.97 × 1012Jones, which are 830-fold and 268-fold higher than those of pristine MoS2under 300 nm illumination atVds = 5 V. This research indicates a significant progress in fabricating high-performance MoS2photodetectors.

Enhanced Piezoelectric Effect Derived from Grain Boundary in MoS2 Monolayers.

Recent discovery of piezoelectricity that existed in two-dimensional (2D) layered materials represents a key milestone for flexible electronics and miniaturized and wearable devices. However, so far the reported piezoelectricity in these 2D layered materials is too weak to be used for any practical applications. In this work, we discovered that grain boundaries (GBs) in monolayer MoS2 can significantly enhance its piezoelectric property. The output power of piezoelectric devices made of the butterfly-shaped monolayer MoS2 was improved about 50% by the GB-induced piezoelectric effect. The enhanced piezoelectricity is attributed to the additional piezoelectric effect induced by the existence of deformable GBs which can promote polarization and generates spontaneous polarization with different piezoelectric coefficients along various directions. We further made a flexible piezoelectric device based on the 2D MoS2 with the GBs and demonstrated its potential application in self-powered precision sensors for in situ detecting pressure changes in human blood for health monitoring.

Lateral Monolayer MoSe2 -WSe2 p-n Heterojunctions with Giant Built-In Potentials.

2D transition metal dichalcogenides (TMDs) have exhibited strong application potentials in new emerging electronics because of their atomic thin structure and excellent flexibility, which is out of field of tradition silicon technology. Similar to 3D p-n junctions, 2D p-n heterojunctions by laterally connecting TMDs with different majority charge carriers (electrons and holes), provide ideal platform for current rectifiers, light-emitting diodes, diode lasers and photovoltaic devices. Here, growth and electrical studies of atomic thin high-quality p-n heterojunctions between molybdenum diselenide (MoSe2 ) and tungsten diselenide (WSe2 ) by one-step chemical vapor deposition method are reported. These p-n heterojunctions exhibit high built-in potential (≈0.7 eV), resulting in large current rectification ratio without any gate control for diodes, and fast response time (≈6 ms) for self-powered photodetectors. The simple one-step growth and electrical studies of monolayer lateral heterojunctions open up the possibility to use TMD heterojunctions for functional devices.

Contact engineering high-performance ambipolar multilayer tellurium transistors.

Multilayer Te nanosheets have attracted increasing attention due to their high-performance electronic transport properties and good air-stability. Theoretical simulation suggests that the electronic properties of multilayer Te nanosheets could be effectively modulated by contact engineering, but most studies have reported p-type multilayer Te devices. Here, for the first time, we report on high performance ambipolar multilayer Te filed-effect-transistors (FETs) with low work function scandium (Sc, 3.58 eV), demonstrating high mobilities of 489 and 648 cm2V-1s-1 for electron and hole transport, respectively. Multilayer Te FETs with large work function metals, such as chromium (Cr, 4.5 eV), show a typical p-type transport behavior. The band structure of multilayer Te with a small bandgap and low work function Sc result in a small contact resistance (R c) for both of electron and hole transport, which leads to the ambipolar behavior of multilayer Te nanosheets. The ambipolar behavior of multilayer Te FETs indicates that contact engineering is a valid tool to tune the electrical properties of multilayer Te and raises the possibility of designing digital circuits based on multilayer Te.

Two-Dimensional van der Waals Materials with Aligned In-Plane Polarization and Large Piezoelectric Effect for Self-Powered Piezoelectric Sensors.

Piezoelectric two-dimensional (2D) van der Waals (vdWs) materials are highly desirable for applications in miniaturized and flexible/wearable devices. However, the reverse-polarization between adjacent layers in current 2D layered materials results in decreasing their in-plane piezoelectric coefficients with layer number, which limits their practical applications. Here, we report a class of 2D layered materials with an identical orientation of in-plane polarization. Their piezoelectric coefficients (e22) increase with layer number, thereby allowing for the fabrication of flexible piezotronic devices with large piezoelectric responsivity and excellent mechanical durability. The piezoelectric outputs can reach up to 0.363 V for a 7-layer α-In2Se3 device, with a current responsivity of 598.1 pA for 1% strain, which is 1 order of magnitude higher than the values of the reported 2D piezoelectrics. The self-powered piezoelectric sensors made of these newly developed 2D layered materials have been successfully used for real-time health monitoring, proving their suitability for the fabrication of flexible piezotronic devices due to their large piezoelectric responses and excellent mechanical durability.

A brief introduction of Xiangya's anti-epidemic history in a century. / ç™¾å¹´æ¹˜é› æŠ—ç–«ç®€å².

Based on archival materials, the Xiangya's anti-epidemic history in a century from its establishment to 2020 is divided into 4 stages. The first stage (1906-1926), Edward Hicks Hume and YAN Fuqing, the founders of Xiangya, prevented and controlled smallpox and plague. The second stage (1929-1953), during the resumption of Xiangya, students prevented and controlled cholera, plague, dysentery, typhus, and other infectious diseases. In the third stage (1953-1999), in a peacetime, Xiangya actively fought against schistosomiasis, hydatidosis, malaria, leprosy, tuberculosis and other epidemics. The fourth stage (2000-2020), the era of Central South University. Medical staff in Xiangya fight SARS, influenza A (H1N1) flu, Ebola hemorrhagic fever, coronavirus disease 2019, etc. Over the past hundred years, Xiangya people joined together to spread benevolence and love, apply medical knowledge and skills, combat the epidemic and rescue people in difficulties, which made a great contribution to the motherland and the people.

Graphene nanoparticle strain sensors with modulated sensitivity through tunneling types transition.

Highly sensitive strain sensors show great potential for use in wearable health monitoring, autonomous intelligent robots and biomimetic prosthetics. The current resistive strain sensors mainly work through piezoresistors. Here, the robust tunneling mechanism based nanoscale strain sensors with high sensitivity are reported. The strain sensors are fabricated from graphene nanoparticle film. The sensitivity of graphene nanoparticle strain sensors could be tunable through the modulation of tunneling type, suggesting a theoretical support in performance optimization of tunneling strain sensors. The output characterization indicates the direct tunneling (DT) and Fowler-Nordheim tunneling (FNT) are dominant for charge carrier transport in the low voltage and high voltage regions, respectively. It is found that gauge factors are ∼79 at low voltage of 0-4 V, and ∼110 at high voltage of 20-40 V, showing profound dependence on DT and FNT types. The strain sensor bearing 0.3% strain shows a great stability over 100 cycles at bias voltage of 1 V and 40 V, respectively. An integrated strain sensor array with 5 × 5 patterned graphene nanoparticle film on a polyethylene terephthalate substrate is fabricated and demonstrates great spatial strain distribution, guiding the design for flexible and transparent strain sensor e-skins.

Asymmetrically synchronous reduction and assembly of graphene oxide film on metal foil for moisture responsive actuator.

Graphene has drawn tremendous attention for the fabrication of actuators because of its unique chemical and structural features. Traditional graphene actuators need integration with polymers or other responsive components for shape-changeable behaviour. Searching for a sole material with asymmetric properties is difficult and challenging for actuators that are responsive to external stimulus. Herein, asymmetrically synchronous reduction and assembly of a graphene oxide (GO) film with oxygen-containing group gradients was prepared on various metal foils. Such film possessed asymmetric surface chemical components on both sides, which showed reversible deformation via alternating moisture. Importantly, we can detect the moisture change via recording the voltage pulse during self-deformation on the basis of spontaneous H3O+ ions diffusion across the GO film without the need of power input. Finally, a smart gripper was developed using a moisture responsive GO film. Present work opens a new avenue for developing smart actuator using a sole material and simultaneously realizing the detection of deformation in self-powered mode.

Shape evolution of two dimensional hexagonal boron nitride single domains on Cu/Ni alloy and its applications in ultraviolet detection.

Two dimensional (2D) hexagonal boron nitride (h-BN) has attracted extensive attention due to its high thermal and chemical stability, excellent dielectric characteristic, and unique optical properties. However, the chemical vapor deposition synthesis of 2D h-BN is not fully explored, such as morphology regulation and size control. Here we demonstrate the growth of 2D h-BN single domains on Cu/Ni alloy via atmospheric chemical vapor deposition (APCVD). We discover that the shape of the as-grown h-BN single domains can be controlled from triangles, hexagons, to circles by adjusting the Ni content of the Cu/Ni substrates. Moreover, we find out that increasing the nickel content can suppress the nucleation density while the average domain size is accordingly improved. The grown single-crystalline h-BN demonstrates ultralow dark current about 0.9 pA and outstanding ultraviolet response with the responsivity up to 5.45 mAW-1. The response time are 376 and 198 ms. Our work sheds light on the controllable synthesis of 2D h-BN and promotes its applications in high ultraviolet detection.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking.

Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In_{2}Se_{3} crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature (∼700 K) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.

Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics.

The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 µm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets.

Two-dimensional (2D) In2Se3 with unique optical and electrical properties has great potential in next generation optoelectronics and multilevel phase-change memories. Here, for the first time, we report high-performance rigid and flexible photodetectors based on chemical vapor deposition (CVD) grown 2D In2Se3. Both rigid and flexible 2D In2Se3 photodetectors show a broadband response range from ultraviolet (254 nm) to visible light (700 nm). High photoresponsivities of 578 and 363 A · W-1 are achieved using rigid and flexible 2D In2Se3 photodetectors, respectively, under 700 nm light illumination, which are higher than those of photodetectors based on mechanically exfoliated 2D In2Se3 and physical vapor deposition grown 2D In2Se3. Furthermore, flexible 2D In2Se3 photodetectors show good mechanical durability and photoresponse stability under repeated bending tests. A high and stable photoresponse provides an opportunity for CVD-grown 2D In2Se3 applications in flexible optoelectronic and photovoltaic devices.

Neuropeptide Y promotes adipogenic differentiation in primary cultured human adipose-derived stem cells.

Neuropeptide Y (NPY) is an important neurotransmitter in the control of energy metabolism. Several studies have shown that obesity is associated with increased levels of NPY in the hypothalamus. We hypothesized that the release of NPY has coordinated and integrated effects on energy metabolism in different tissues, such as adipocyte tissue, resulting in increased energy storage and decreased energy expenditure. Whether NPY has role in the molecular mechanism of human adipocyte tissue remains unclear. We established the model of human adipose derived stem cells (hADSCs) from human adipose tissue and differentiated it into adipocytes in the presence of NPY at different concentrations (10-15-10-6 mmol/L). We then assessed hADSCs proliferation and differentiation by quantifying lipid accumulation and examining the expression levels of related adipocyte markers after differentiation. Furthermore, the specific markers of white adipocyte tissue (WAT) in hADSCs were also analyzed. The results showed that low doses of NPY stimulated hADSCs proliferation (p < 0.05), while high doses of NPY inhibited hADSCs proliferation (p < 0.05). NPY significantly promoted lipid accumulation and increased the size of lipid droplets during human adipogenic differentiation; the levels of adipocyte markers PPAR-γ and C/EBPα were also increased. At the same time, NPY also increased the levels of WAT markers Cidec and RIP140 after adipocyte differentiation. The results suggested high dose NPY inhibits the proliferation of hADSCs while promotes adipocyte differentiation and increases the expression of WAT markers. This may be the reason why increased levels of NPY can lead to a rise in body weight.

Controlled growth of six-point stars MoS2 by chemical vapor deposition and its shape evolution mechanism.

Monolayer semiconductors of molybdenum disulfide (MoS2) crystals have drawn tremendous attention due to their extraordinary electronic and optical properties. A uniform and high-quality crystalline MoS2 monolayer is greatly needed in fundamental studies and practical applications. Three-point star to six-point star MoS2 nanosheets are readily synthesized in a controlled manner using the chemical vapor deposition method. A possible coalescent model is proposed to study the evolution of the six-point star MoS2 domain. A comparative study of field effect transistors are performed to disclose the negative effect of grain boundaries on the transport properties based on six-point star MoS2.

Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for high performance opto-electronic devices such as photodetectors and light sources. Here we report on the fabrication and electronic properties of vdW heterojunction diodes composed of the direct band gap layered semiconductors InSe and GaSe and transparent monolayer graphene electrodes. We show that the type II band alignment between the two layered materials and their distinctive spectral response, combined with the short channel length and low electrical resistance of graphene electrodes, enable efficient generation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast (∼2 µs), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and offer new routes to miniaturized optoelectronics beyond present semiconductor materials and technologies.