Broadband high-contrast-grating-type waveplates for the terahertz range.

The high-contrast-grating waveplates utilizing high contrast between silicon and air refractive indexes were developed in order to perform as a quarter wave and a half wave plate in the selected THz frequency range. The waveplates possessed anti-reflective properties due to the specific inclination of the walls both in parallel and in perpendicular direction to grating axis, efficiently suppressing the reflection losses caused by air-dielectric interface for both transverse magnetic and transverse electric polarizations. Moreover, significant reduction of the transmittance gap was achieved between both polarizations while mitigating overall Fabry-Perot effect. Validation of the concepts was carried out by measuring transmission amplitude and phase spectra of the fabricated samples in a broadband of THz time-domain spectroscopy and vector-network-analysis systems considering also some real applications.

Spatial coherence of hybrid surface plasmon-phonon-polaritons in shallow n-GaN surface-relief gratings.

Dispersion characteristics of hybrid surface plasmon-phonon-polaritons (SPPhPs) on the air/polar semiconductor interface were investigated by means of shallow surface relief grating using emission spectroscopy methods. A set of grating structures with optimal 1 µm depth and periods from 8 to 22 µm was developed on a heavily-doped GaN crystal. The SPPhPs were excited by thermal heating or electrical biasing of the samples which radiated directive polarized features in an extremely narrowband spectrum range. Detailed analysis of damping factors and propagation losses revealed maximum values of quality factor and spatial coherence of hybrid SPPhPs modes. Highest quality factor was found to be practically independent on the period of the shallow grating, as it was always detected near the frequency of transverse optical phonon, demonstrating values as high as 88 and 200 in experiment and theory, respectively. Meanwhile, the largest values of coherence length strongly depended on the grating as the propagation losses of hybrid SPPhP modes showed a tendency to accumulate with the wavevector increase. The sample with 22 µm grating period demonstrated the highest coherence of hybrid polaritons with the experimental (theoretical) coherence length values as high as 1.6 mm (2.3 mm).

Modified rigorous coupled-wave analysis for grating-based plasmonic structures with a delta-thin conductive channel: far- and near-field study.

The modified rigorous coupled-wave analysis technique is developed to describe the optical characteristics of the plasmonic structures with the grating-gated delta-thin conductive channel in the far- and near-field zones of electromagnetic waves. The technique was applied for analysis of the resonant properties of AlGaN/GaN heterostructures combined with a deeply subwavelength metallic grating, which facilitates the excitation of the two-dimensional plasmons in the terahertz (THz) frequency range. The convergence of the calculations at the frequencies near the plasmon resonances is discussed. The impact of the grating's parameters, including filling factor and thickness of the grating, on resonant absorption of the structure was investigated in detail. The spatial distributions of the electromagnetic field in a near-field zone were used for the evaluation of total absorption of the plasmonic structures separating contributions of the grating-gated two-dimensional electron gas and the grating coupler.

Laser-processed diffractive lenses for the frequency range of 4.7 THz.

The development of diffractive lenses for the upper terahertz (THz) frequency range above 1 THz was successfully demonstrated by employing a direct laser ablation (DLA) technology. Two types of samples such as the Soret zone plate lens and the multi-level phase-correcting Fresnel lens were fabricated of a metal foil and crystalline silicon, respectively. The focusing performance along the optical axis of a 4.745 THz quantum cascade laser beam with respect to the positioning angle of the sample was studied by using a real-time microbolometric camera. A binary-phase profile sample demonstrated the values of the focusing gain and focused beam size up to 25 dB and 0.15 mm (2.4λ), respectively. The increase of the phase quantization level to eight led to higher (up to 29 dB) focusing gain values without a measurable increase of optical losses. All the samples were tolerant to misalignment as large as 10 deg of oblique incidence with a focusing power drop no larger than 10%. The results pave the way for new applications of industry-ready DLA technology in the entire THz range.

Correlation between temperature activation of charge-carrier generation efficiency and hole mobility in small-molecule donor materials.

In organic solar cells, free charge carriers are generated at the interface between an electron-donating and an electron-accepting material. The detailed mechanisms of the generation of free charge carriers are still under discussion. In this work, we investigate the influence of temperature on the generation efficiency of free charge carriers in blends of dicyanovinyl substituted oligothiophene (DCVnT) molecules and C60 by quasi-steady-state photoinduced absorption (PIA) measurements. The observed positive temperature dependence of charge-carrier generation can be directly correlated to the charge-transport behavior. The determined activation energy scales inversely with the hole mobility for all investigated DCVnT derivatives, suggesting higher dissociation probability of bound interfacial charge pairs at high mobility. Furthermore, the energetic disorder parameter, σ, determined by CELIV (charge extraction by linearly increasing voltage) measurements for a DCV6T derivative, matches the activation energy from the PIA measurements. In conclusion, these results underline the need for high-mobility donor materials for optimal charge-pair dissociation in organic solar cells.

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate.

The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from 0.1 THz to 60 THz at two temperatures of 77 K and 300 K. The epilayers demonstrated the low-field electron mobility and density values reaching up to 1021 cm2/V·s and 1.06 × 1016 cm-3 (at 300 K) and 2652 cm2/V·s and 0.21 × 1016 cm-3 (at 77 K), respectively. Maximum injected electric power value till the damage of the GaN epilayer was found to be up to 1.8 GW/cm3 and 5.1 GW/cm3 at 77 K and 300 K, respectively. The results indicate new practical possibilities of the GaN material controlled by an external electric field.