Ga-Modification Near-Surface Composition of Pt-Ga/C Catalyst Facilitates High-Efficiency Electrochemical Ethanol Oxidation through a C2 Intermediate.

In electrochemical ethanol oxidation reactions (EOR) catalyzed by Pt metal nanoparticles through a C2 route, the dissociation of the C-C bond in the ethanol molecule can be a limiting factor. Complete EOR processes producing CO2 were always exemplified by the oxidative dehydrogenation of C1 intermediates, a reaction route with less energy utilization efficiency. Here, we report a Pt3Ga/C electrocatalyst with a uniform distribution of Ga over the nanoparticle surface for EOR that produces CO2 at medium potentials (>0.3 V vs SCE) efficiently through direct and sustainable oxidation of C2 intermediate species, i.e., acetaldehyde. We demonstrate the excellent performance of the Pt3Ga-200/C catalyst by using electrochemical in situ Fourier transform infrared reflection spectroscopy (FTIR) and an isotopic labeling method. The atomic interval structure between Pt and Ga makes the surface of nanoparticles nonensembled, avoiding the formation of poisonous *CHx and *CO species via bridge-type adsorption of ethanol molecules. Meanwhile, the electron redistribution from Ga to Pt diminishes the *O/*OH adsorption and CO poisoning on Pt atoms, exposing more available sites for interaction with the C2 intermediates. Furthermore, the dissociation of H2O into *OH is facilitated by the high hydrophilicity of Ga, which is supported by DFT calculations, promoting the deep oxidation of C2 intermediates. Our work represents an extremely rare EOR process that produces CO2 without observing kinetic limitations under medium potential conditions.

Theoretical study on the charge transport properties of three series of dicyanomethylene quinoidal thiophene derivatives.

It is very important to analyse the most advantageous connection style for quinoidal thiophene derivatives, which are used in n-type organic semiconductor transport materials. In the present work, the charge transport properties of three series of quinoidal thiophene derivatives, oligothiophene (series A), thienothiophene (series B) and benzothiophene (series C), are systematically investigated by employing full quantum charge transfer theory combined with kinetic Monte-Carlo simulation. The single crystal structures of the molecules we had constructed were predicted using the USPEX program combined with density functional theory (DFT) and considering the dispersion corrected. Our theoretical results expounded how the different connection styles, including oligo-, thieno-, and benzo-thiophene in the quinoidal thiophenes derivatives, effectively tune their electronic structures, and revealed how their intermolecular interactions affect the molecular packing patterns and hence their charge transport properties by symmetry-adapted perturbation theory (SAPT). In the meantime we also elucidated the role of end-cyano groups in noncovalent interactions. Furthermore, it is clarified that quinoidal thiophene derivatives show excellent carrier transport properties due to their optimal molecular stacking motifs and larger electronic couplings besides their low energy gap. In addition, our theoretical results demonstrate that quinoidal oligothiophene derivatives (n = 3-5) with more thiophene rings will have ambipolar transport properties, so quinoidal thienothiophene and benzothiophene derivatives should be promising alternatives as n-type OSCs. When we focused only on the electronic transport properties in the three series of molecules, quinoidal benzothiophene derivatives were slightly better than quinoidal oligothiophene or thienothiophene derivatives.

Theoretical Investigations into the Electron and Ambipolar Transport Properties of Anthracene-Based Derivatives.

To obtain anthracene-based derivatives with electron transport behavior, two series of anthracene-based derivatives modified by trifluoromethyl groups (-CF3) and cyano groups (-CN) at the 9,10-positions of the anthracene core were studied. Their electronic structures and crystal packings were also analyzed and compared. The charge-carrier mobilities were evaluated by quantum nuclear tunneling theory based on the incoherent charge-hopping model. Our results suggest that introducing -CN groups at 9,10-positions of the anthracene core is more favorable than introducing -CF3 to maintain great planar rigidity of the anthracene skeleton, decreasing more lowest unoccupied molecular orbital energy levels (0.45-0.55 eV), reducing reorganization energies, and especially forming a tight packing motif. Eventually, the excellent electron transport materials could be obtained. The molecule 1-B in Series 1 containing -CF3 groups is an ambipolar organic semiconductor (OSC) material with a 2D transport network, and its value of µh-max/µe-max is 1.75/0.47 cm2 V-1 s-1 along different directions; 2-A and 2-C in Series 2 with -CN groups are excellent n-type OSC candidates with the maximum intrinsic mobilities of 3.74 and 2.69 cm2 V-1 s-1 along the π-π stacking direction, respectively. Besides, the Hirshfeld surface and quantum theory of atoms in molecules analyses were applied to reveal the relationship between noncovalent interactions and crystal stacking.

Theoretical study on the charge transport in single crystals of TCNQ, F2-TCNQ and F4-TCNQ.

2,5-Difluoro-7,7,8,8-tetracyanoquinodimethane (F2-TCNQ) was recently reported to display excellent electron transport properties in single crystal field-effect transistors (FETs). Its carrier mobility can reach 25 cm2 V-1 s-1 in devices. However, its counterparts TCNQ and F4-TCNQ (tetrafluoro-7,7,8,8-tetracyanoquinodimethane) do not exhibit the same highly efficient behavior. To better understand this significant difference in charge carrier mobility, a multiscale approach combining semiclassical Marcus hopping theory, a quantum nuclear enabled hopping model and molecular dynamics simulations was performed to assess the electron mobilities of the Fn-TCNQ (n = 0, 2, 4) systems in this work. The results indicated that the outstanding electron transport behavior of F2-TCNQ arises from its effective 3D charge carrier percolation network due to its special packing motif and the nuclear tunneling effect. Moreover, the poor transport properties of TCNQ and F4-TCNQ stem from their invalid packing and strong thermal disorder. It was found that Marcus theory underestimated the mobilities for all the systems, while the quantum model with the nuclear tunneling effect provided reasonable results compared to experiments. Moreover, the band-like transport behavior of F2-TCNQ was well described by the quantum nuclear enabled hopping model. In addition, quantum theory of atoms in molecules (QTAIM) analysis and symmetry-adapted perturbation theory (SAPT) were used to characterize the intermolecular interactions in TCNQ, F2-TCNQ and F4-TCNQ crystals. A primary understanding of various noncovalent interaction responses for crystal formation is crucial to understand the structure-property relationships in organic molecular materials.

Theoretical investigations into the charge transfer properties of thiophene α-substituted naphthodithiophene diimides: excellent n-channel and ambipolar organic semiconductors.

A theoretical study was carried out to investigate the electronic structures and the charge transport properties of a series of naphthodithiophene diimide (NDTI) thiophene α-substituted derivatives NDTI-X using density functional theory and classical Marcus charge transfer theory. This study deeply revealed the structure-property relationships by analyzing the intermolecular interactions in crystal structures of C8-NDTI and C8-NDTI-Cl thoroughly by using the Hirshfeld surface, QTAIM theories and symmetry-adapted perturbation theory (SAPT). Our results suggested that a 2-D brick-like π-stacking structure makes C8-NDTI-Cl a more excellent n-type semiconducting material with µmax-e of 2.554 cm2 V-1 s-1 than C8-NDTI with a herringbone-like slipped π-stacking motif. In addition, the calculated results showed that by modifying the thiophene α-positions of NDTI with electron-withdrawing substituents, -F, -Cl and -CN, low-lying LUMO energy levels and a high adiabatic electron affinity EA(a) can be obtained; while introducing electron-donating groups, benzene (-B), thiophene (-T), benzo[b]thiophene (-BT) and naphtha[2,3-b]thiophene (-NT), expanded the molecular π-conjugated backbone, and narrow band gaps, high EA(a) and small reorganization energies can be obtained. Theoretical simulations predict that NDTI-CN is an excellent air-stable n-type organic semiconducting material with an average electron mobility µe of up to 1.743 cm2 V-1 s-1. Owing to their high EA(a), moderate adiabatic ionization potential IP(a) as well as small hole and electron reorganization energies, NDTI-BT and NDTI-NT are two well-balanced air-stable ambipolar semiconducting materials. The theoretical average hole/electron mobilities are as high as 2.708/3.739 cm2 V-1 s-1 for C8-NDTI-NT and 1.597/2.350 cm2 V-1 s-1 for C8-NDTI-BT, respectively.

Theoretical Predictions of C3v Symmetric Three-H-Bridged Noble Gas Compounds NgBeH3BeR, NgBeH3BR(+), and NgBH3BR(2).

A new series of stable noble gas-Lewis acid compounds NgBeH3BeR, NgBeH3BR(+), and NgBH3BR(2+) (R = F, H, CH3, Ng = He-Rn) with three 3c-2e H-bridged bonds have been predicted by use of the PBE0 and MP2 methods. The Ng-Be/B bonds are strong and have large binding energies 35-130, 9-38, and 4-13 kcal/mol for the doubly charged cations, singly charged cations, and neutral molecules, respectively. The binding energy and strength of the Ng-Be/B bonds increase largely from He to Rn but are insensitive to electronegativity of the substituent R. The Ng-B bonds in NgBH3BR(2+) should be typical covalent bonds and the Ng-Be bonds in NgBeH3BR(+) for heavy Ng atoms Kr, Xe, and Rn have some covalent character. The three bridging-H atoms have characteristic infrared vibrational modes with large IR intensity to be detected in spectroscopy experiments.

Room temperature ferromagnetism in metallic Ti1-x V x O2 thin films.

Transition metal doped TiO2 diluted magnetic semiconductors have attracted considerable interest due to their room temperature ferromagnetism. However, most TiO2 films are highly insulating, and thus the magnetic properties can not be controlled by tuning the carrier concentration. This will limit their application in controlling magnetization via electrical gating. Here, we deposit rutile Ti1-x V x O2 (x = 0.03 and 0.05) films with the thickness between 30 and 245 nm by the pulsed laser deposition technique, and observe an obvious room temperature ferromagnetic behavior in all films. The high resolution X-ray photoelectron spectroscopy results indicate that V substituting Ti4+ ions in the TiO2 lattice, with the +3 valence state having two unpaired d electrons, is responsible for the local spin. More importantly, the systemic investigations of transport properties for Ti1-x V x O2 films reveal that the films are n-type and have metallic conductivity with a carrier density of about 1020/cm3. Further studies suggest that the oxygen vacancies play a dual role of contributing to the metallic conductivity of the Ti1-x V x O2 films, and also providing the free electrons to mediate the long-range ferromagnetic coupling between two magnetic polarons. These findings may offer promise for gate-tunable ferromagnetism in future semiconductor spintronics.

Substituent effects on the properties of the hemi-bonded complexes (XH2P···NH2Y)(+) (X, Y=H, F, Cl, Br, NH2, CH3, OH).

Ab initio calculations have been performed to study the structures, binding energies, and bonding properties of the hemi-bonded binary complexes (XH2P···NH2Y)(+) with the substituents X and Y being H, F, Cl, Br, NH2, CH3, and OH. The P···N interactions in these open-shelled systems have typical pnicogen bond characteristics but much stronger than the usual pnicogen bonds in closed-shell systems. This P···N bond can be strengthened by an electron-withdrawing substituent X or an electron-donating substituent Y, the bonding energy varies from 17 kcal mol(-1) of (CH3H2P···NH2F)(+) to 54 kcal mol(-1) of (FH2P···NH2CH3)(+). A nearly linear X-P···N arrangement is required by the pnicogen bond P···N and results in a strong hyperconjugation and charge transfer from the N lone pair to the X-P σ* antibond orbital for α spin, the P···N interaction is described as a single-electron σ bond of ß spin. The AIM and NBO analyses revealed that the P···N bonds in the majority of the hemi-bonded complexes are partly covalent in nature. Graphical Abstract The P···N interactions in the open-shelled systems (XH2P···NH2Y)(+) (X, Y=H, F, Cl, Br, NH2, CH3, OH) with bonding energy of 17~54 kcal mol(-1) have typical pnicogen bond characteristics but much stronger than the usual pnicogen bonds in closed-shell systems. This P···N bond can be strengthened by an electron-withdrawing substituent X or an electron-donating substituent Y.