Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals.

Bismuth-based chalcogenides have emerged as promising candidates for next-generation, solution-processable semiconductors, mainly benefiting from their facile fabrication, low cost, excellent stability, and tunable optoelectronic properties. Particularly, the recently developed AgBiS2 solar cells have shown striking power conversion efficiencies. High performance bismuth-based photodetectors have also been extensively studied in the past few years. However, the fundamental properties of these Bi-based semiconductors have not been sufficiently investigated, which is crucial for further improving the device performance. Here, we introduce multiple time-resolved and steady-state techniques to fully characterize the charge carrier dynamics and charge transport of solution-processed Bi-based nanocrystals. It was found that the Ag-Bi ratio plays a critical role in charge transport. For Ag-deficient samples, silver bismuth sulfide thin films behave as localized state induced hopping charge transport, and the Ag-excess samples present band-like charge transport. This finding is crucial for developing more efficient Bi-based semiconductors and optoelectronic devices.

Enhanced Photoluminescence Quantum Yield of Metal Halide Perovskite Microcrystals for Multiple Optoelectronic Applications.

Recently, metal 1halide perovskites have shown compelling optoelectronic properties for both light-emitting devices and scintillation of ionizing radiation. However, conventional lead-based metal halide perovskites are still suffering from poor material stability and relatively low X-ray light yield. This work reports cadmium-based all-inorganic metal halides and systematically investigates the influence of the metal ion incorporation on the optoelectronic properties. This work introduces the bi-metal ion incorporation strategy and successfully enhances the photoluminescence quantum yield (98.9%), improves thermal stability, and extends the photoluminescence spectra, which show great potential for white light emission. In addition, the photoluminescent decay is also modulated with single metal ion incorporation, the charge carrier lifetime is successfully reduced to less than 1 µs, and the high luminescent efficiency and X-ray light yield (41 000 photons MeV-1 ) are maintained. Then, these fast scintillators are demonstrated for high-speed light communication and sensitive X-ray detection and imaging.

Precursor Engineering of Solution-Processed Sb2 S3 Solar Cells.

Antimony-based chalcogenides have emerged as promising candidates for next-generation thin film photovoltaics. Particularly, binary Sb2 S3 thin films have exhibited great potential for optoelectronic applications, due to the facile and low-cost fabrication, simple composition, decent charge transport and superior stability. However, most of the reported efficient Sb2 S3 solar cells are realized based on chemical bath deposition and hydrothermal methods, which require large amount of solution and are normally very time-consuming. In this work, Ag ions are introduced within the Sb2 S3 sol-gel precursors, and effectively modulated the crystallization and charge transport properties of Sb2 S3 . The crystallinity of the Sb2 S3 crystal grains are enhanced and the charge carrier mobility is increased, which resulted improved charge collection efficiency and reduced charge recombination losses, reflected by the greatly improved fill factor and open-circuit voltage of the Ag incorporated Sb2 S3 solar cells. The champion devices reached a record high power conversion efficiency of 7.73% (with antireflection coating), which is comparable with the best photovoltaic performance of Sb2 S3 solar cells achieved based on chemical bath deposition and hydrothermal techniques, and pave the great avenue for next-generation solution-processed photovoltaics.

High detectivity solar blind photodetector based on mechanical exfoliated hexagonal boron nitride films.

As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (R205nm/R280nm= 235) and high detectivity up to 1.28 × 1011Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature.

Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity.

Chalcogenide-based semiconductors are emerging as a set of highly promising candidates for optoelectronic devices, owing to their low toxicity, cost-effectiveness, exceptional stability, and tunable optoelectronic properties. Nonetheless, the limited understanding of charge recombination mechanisms and trap states of these materials is impeding their further development. To fill this gap, we conducted a comprehensive study of bismuth-based chalcogenide thin films and systematically investigated the influence of post-treatments via time-resolved microwave conductivity and temperature-dependent photoluminescence. The key finding in this work is that post-treatment with Bi could effectively enhance the crystallinity and charge-carrier mobility. However, the carrier density also increased significantly after the Bi treatment. On the contrary, post-treatment of evaporated Bi2S3 thin films with sulfur could effectively increase the carrier lifetime and mobility by passivating the trap states on the grain boundaries, which is also consistent with the enhanced radiative recombination efficiency.

Strong Magnetically-Responsive Circularly Polarized Phosphorescence and X-Ray Scintillation in Ultrarobust Mn(II)-Organic Helical Chains.

Over recent years, Mn(II)-organic materials showing circularly polarized luminescence (CPL) have attracted great interest because of their eco-friendliness, cheapness, and room temperature phosphorescence. Using the helicity design strategy, herein, chiral Mn(II)-organic helical polymers are constructed featuring long-lived circularly polarized phosphorescence with exceptionally high glum and ΦPL magnitudes of 0.021% and 89%, respectively, while remaining ultrarobust toward humidity, temperature, and X-rays. Equally important, it is disclosed for the first time that the magnetic field has a remarkably high negative effect on CPL for Mn(II) materials, suppressing the CPL signal by 4.2-times at B ⃗ $\vec{B}$  = 1.6 T. Using the designed materials, UV-pumped CPL light-emitting diodes are fabricated, demonstrating enhanced optical selectivity under right- and left-handed polarization conditions. On top of all this, the reported materials display bright triboluminescence and excellent X-ray scintillation activity with a perfectly linear X-ray dose rate response up to 174 µGyair  s-1 . Overall, these observations significantly contribute to the CPL phenomenon for multi-spin compounds and promote the design of highly efficient and stable Mn(II)-based CPL emitters.

Flexible and stable copper-based halide scintillator for high-performance X-ray imaging.

Rb2CuBr3 nanocrystals with a high photoluminescence quantum yield (PLQY) of 75% were synthesized and then further mixed with polymethyl methacrylate to form flexible scintillators. The scintillators maintain a high PLQY, even after bending for 2000 cycles and storing in air for 28 days. X-Ray imaging of targeted objects was demonstrated based on the flexible scintillators, which exhibits a detection limit of 63 nGyair s-1 and a spatial resolution of 27.9 lp mm-1.