High-efficiency red electroluminescent device based on multishelled InP quantum dots.

We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849 cd/m2, a current efficiency of 4.2 cd/A, and an external quantum efficiency of 2.5%.

Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots.

The main issue in developing a quantum dot light-emitting diode (QLED) display lies in successfully replacing heavy metals with environmentally benign materials while maintaining high-quality device performance. Nonradiative Auger recombination is one of the major limiting factors of QLED performance and should ideally be suppressed. This study scrutinizes the effects of the shell structure and composition on photoluminescence (PL) properties of InP/ZnSeS/ZnS quantum dots (QDs) through ensemble and single-dot spectroscopic analyses. Employing gradient shells is discovered to suppress Auger recombination to a high degree, allowing charged QDs to be luminescent comparatively with neutral QDs. The "lifetime blinking" phenomenon is observed as evidence of suppressed Auger recombination. Furthermore, single-QD measurements reveal that gradient shells in QDs reduce spectral diffusion and elevate the energy barrier for charge trapping. Shell composition dependency in the gradience effect is observed. An increase in the ZnS composition (ZnS >50%) in the gradient shell introduces lattice mismatch between the core and the shell and therefore rather reverses the effect and reduces the QD performance.

High-performance tricolored white lighting electroluminescent devices integrated with environmentally benign quantum dots.

The electroluminescent (EL) performances of quantum dot-light-emitting diodes (QLEDs) based on either high-quality CdSe- or Cd-free quantum dots (QDs) have been greatly improved during the last decade, exclusively aiming at monochromatic devices for display applications. Meanwhile, work on white lighting QLEDs integrated particularly with Cd-free QDs remains highly underdeveloped. In this work, the solution-processed fabrication of tricolored white lighting QLEDs comprising three environmentally benign primary color emitters of II-VI blue and green ZnSeTe and I-III-VI red Zn-Cu-In-S (ZCIS) QDs is explored. The emitting layer (EML) consists of two different QD layers stacked on top of the other with an ultrathin ZnMgO nanoparticle buffer layer inserted in the middle, with both blue and green QDs mixed in one layer, and red QDs placed in a separate layer. The stacking order of the bilayered EML architecture is found to control the exciton recombination zone and thus crucially determine the EL performance of the device. The optimal tricolored white device yields outstanding EL performances such as 5461 cd m-2 luminance, 5.8% external quantum efficiency, and 8.4 lm W-1 power efficiency, along with a near-ideal color rendering index of 95, corresponding to the record quantities reported among Cd-free white lighting QLEDs.

Emission Enhancement of Cu-Doped InP Quantum Dots through Double Shelling Scheme.

The doping of transition metal ions, such as Cu+ and Mn2+ into a quantum dot (QD) host is one of the useful strategies in tuning its photoluminescence (PL). This study reports on a two-step synthesis of Cu-doped InP QDs double-shelled with ZnSe inner shell/ZnS outer shell. As a consequence of the double shelling-associated effective surface passivation along with optimal doping concentrations, Cu-doped InP/ZnSe/ZnS (InP:Cu/ZnSe/ZnS) QDs yield single Cu dopant-related emissions with high PL quantum yields of 57-58%. This study further attempted to tune PL of Cu-doped QDs through the variation of InP core size, which was implemented by adopting different types of Zn halide used in core synthesis. As the first application of doped InP QDs as electroluminescent (EL) emitters, two representative InP:Cu/ZnSe/ZnS QDs with different Cu concentrations were then employed as active emitting layers of all-solution-processed, multilayered QD-light-emitting diodes (QLEDs) with the state-of-the-art hybrid combination of organic hole transport layer plus inorganic electron transport layers. The EL performances, such as luminance and efficiencies of the resulting QLEDs with different Cu doping concentrations, were compared and discussed.

Synthesis of Alloyed ZnSeTe Quantum Dots as Bright, Color-Pure Blue Emitters.

Considering a strict global environmental regulation, fluorescent quantum dots (QDs) as key visible emitters in the next-generation display field should be compositionally non-Cd. When compared to green and red emitters obtainable from size-controlled InP QDs, development of non-Cd blue QDs remains stagnant. Herein, we explore the synthesis of non-Cd, ZnSe-based QDs with binary and ternary compositions toward blue photoluminescence (PL). First, the size increment of binary ZnSe QDs is attempted by a multiply repeated growth until blue PL is attained. Although this approach offers a relevant blue color, excessively large-sized ZnSe QDs inevitably entail a low PL quantum yield. As an alternative strategy to the above size enlargement, the alloying of high-band gap ZnSe with lower-band gap ZnTe in QD synthesis is carried out. These alloyed ternary ZnSeTe QDs after ZnS shelling exhibit a systematically tunable PL of 422-500 nm as a function of Te/Se ratio. Analogous to the state-of-the-art heterostructure of InP QDs with a double-shelling scheme, an inner shell of ZnSe is newly inserted with different thicknesses prior to an outer shell of ZnS, where the effects of the thickness of ZnSe inner shell on PL properties are examined. Double-shelled ZnSeTe/ZnSe/ZnS QDs with an optimal thickness of the ZnSe inner shell are then employed for all-solution-processed fabrication of a blue QD light-emitting diode (QLED). The present blue QLED as the first ZnSeTe QD-based device yields a peak luminance of 1195 cd/m2, a current efficiency of 2.4 cd/A, and an external quantum efficiency of 4.2%, corresponding to the record values reported from non-Cd blue devices.

Near-complete photoluminescence retention and improved stability of InP quantum dots after silica embedding for their application to on-chip-packaged light-emitting diodes.

Silica is the most commonly used oxide encapsulant for passivating fluorescent quantum dots (QDs) against degradable conditions. Such a silica encapsulation has been conventionally implemented via a Stöber or reverse microemulsion process, mostly targeting CdSe-based QDs to date. However, both routes encounter a critical issue of considerable loss in photoluminescence (PL) quantum yield (QY) compared to pristine QDs after silica growth. In this work, we explore the embedment of multishelled InP/ZnSeS/ZnS QDs, whose stability is quite inferior to CdSe counterparts, in a silica matrix by means of a tetramethyl orthosilicate-based, waterless, catalyst-free synthesis. It is revealed that the original QY (80%) of QDs is nearly completely retained in the course of the present silica embedding reaction. The resulting QD-silica composites are then placed in degradable conditions such UV irradiation, high temperature/high humidity, and operation of an on-chip-packaged light-emitting diode (LED) to attest to the efficacy of silica passivation on QD stability. Particularly, the promising results with regard to device efficiency and stability of the on-chip-packaged QD-LED firmly suggest the effectiveness of the present silica embedding strategy in not only maximally retaining QY of QDs but effectively passivating QDs, paving the way for the realization of a highly efficient, robust QD-LED platform.

Full-color capable light-emitting diodes based on solution-processed quantum dot layer stacking.

To date, most of the studies on quantum dot-light-emitting diodes (QLEDs) have been dedicated to the fabrication of high-efficiency monochromatic devices. However, for the ultimate application of QLEDs to the next-generation display devices, QLEDs should possess a full-color emissivity. In this study, we report the fabrication of all-solution-processed full-color-capable white QLEDs with a standard device architecture, where sequentially stacked blue (B)/green (G)/red (R) quantum dot (QD)-emitting layers (EMLs) are sandwiched by poly(9-vinylcarbazole) as the hole transport layer and ZnO nanoparticles (NPs) as the electron transport layer. To produce interlayer mixing-free, well-defined B/G/R QD layering assemblies via successive spin casting, an ultrathin ZnO NP buffer is inserted between different-colored QD layers. The present full-color-capable white QLED exhibits high device performance with the maximum values of 16 241 cd m-2 for luminance and 6.8% for external quantum efficiency. The promising results indicate that our novel EML design of ZnO NP buffer-mediated QD layer stacking may afford a viable means towards bright, efficient full-color-capable white devices.

Synthesis of highly efficient azure-to-blue-emitting Zn-Cu-Ga-S quantum dots.

To realize blue emission-capable non-Cd I-III-VI quantum dots (QDs), we explore the synthesis of ternary Cu-Ga-S (CGS) QDs and subsequent quaternary Zn-Cu-Ga-S (ZCGS) via Zn alloying into a CGS host. The resulting ZCGS/ZnS core/shell QDs possess not only Zn content-dependent tunable emissions in the azure-to-blue range but also exceptional quantum yields of 78-83%.

White Electroluminescent Lighting Device Based on a Single Quantum Dot Emitter.

Using a single emitter of Cu-Ga-S/ZnS quantum dots, all-solution-processed white electroluminescent lighting device that not only exhibits the record quantities of 1007 cd m(-2) in luminance and 1.9% in external quantum efficiency but also possesses satisfactorily high color rendering indices of 83-88 is demonstrated.

Analysis of epidermal/dermal temperature changes according to the different cryogen spray cooling conditions.

This study measured epidermal and dermal temperatures under different cryogen spray cooling (CSC) conditions to determine the optimum cooling conditions for skin rejuvenation. For this purpose, CSC conditions were applied before a laser transmission for varying spurt times of 50, 150, and 200 ms with delay times of 150 and 200 ms. A long-pulsed 1,064 nm Nd:YAG laser irradiated the skin surface of a pig with a condition of fluence of 26 J/cm2 and a spot diameter of 8 mm. The pulse duration was set to 30 ms during all experiments. This study found that all employed CSC conditions significantly decreased internal-external skin temperatures. Moreover, skin temperatures were influenced more by variations in spurt time of CSC compared with the delay times. Based on these experimental results, two spurt times were selected as the optimum CSC conditions for skin rejuvenation: 50 ms with delay time of 150 and 200 ms and 150 ms with a delay time of 150 and 200 ms.

Analysis of epidermal/dermal temperature changes according to the different cryogen spray cooling conditions.

This study measured epidermal and dermal temperatures under different cryogen spray cooling (CSC) conditions to determine the optimum cooling conditions for skin rejuvenation. For this purpose, CSC conditions were applied before a laser transmission for varying spurt times of 50, 150, and 200 ms with delay times of 150 and 200 ms. A long-pulsed 1,064 nm Nd:YAG laser irradiated the skin surface of a pig with a condition of fluence of 26 J/cm2 and a spot diameter of 8 mm. The pulse duration was set to 30 ms during all experiments. This study found that all employed CSC conditions significantly decreased internal-external skin temperatures. Moreover, skin temperatures were influenced more by variations in spurt time of CSC compared with the delay times. Based on these experimental results, two spurt times were selected as the optimum CSC conditions for skin rejuvenation: 50 ms with delay time of 150 and 200 ms and 150 ms with a delay time of 150 and 200 ms.