Self-consolidation mechanism of nanostructured Ti5Si3 compact induced by electrical discharge.

Electrical discharge using a capacitance of 450 µF at 7.0 and 8.0 kJ input energies was applied to mechanical alloyed Ti5Si3 powder without applying any external pressure. A solid bulk of nanostructured Ti5Si3 with no compositional deviation was obtained in times as short as 159 µsec by the discharge. During an electrical discharge, the heat generated is the required parameter possibly to melt the Ti5Si3 particles and the pinch force can pressurize the melted powder without allowing the formation of pores. Followed rapid cooling preserved the nanostructure of consolidated Ti5Si3 compact. Three stepped processes during an electrical discharge for the formation of nanostructured Ti5Si3 compact are proposed: (a) a physical breakdown of the surface oxide of Ti5Si3 powder particles, (b) melting and condensation of Ti5Si3 powder by the heat and pinch pressure, respectively, and (c) rapid cooling for the preservation of nanostructure. Complete conversion yielding a single phase Ti5Si3 is primarily dominated by the solid-liquid mechanism.

Valley-polarized interlayer conduction of anisotropic Dirac fermions in SrMnBi2.

We report the valley-selective interlayer conduction of SrMnBi(2) under in-plane magnetic fields. The c-axis resistivity of SrMnBi(2) shows clear angular magnetoresistance oscillations indicating coherent interlayer conduction. Strong fourfold variation of the coherent peak in the c-axis resistivity reveals that the contribution of each Dirac valley is significantly modulated by the in-plane field orientation. This originates from anisotropic Dirac Fermi surfaces with strong disparity in the momentum-dependent interlayer coupling. Furthermore, we found a signature of broken valley symmetry at high magnetic fields. These findings demonstrate that a quasi-two-dimensional anisotropic Dirac system can host a valley-polarized interlayer current through magnetic valley control.

Dimerization-induced Fermi-surface reconstruction in IrTe2.

We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface reconstruction induced by a 1/5-type and a 1/8-type dimerizations. This verifies that an intriguing quasi-two-dimensional conducting plane across the layers is induced by dimerization in both cases. A phase transition to the 1/8 phase with higher dimer density reveals that local instabilities associated with intra- and interdimer couplings are the main driving force for complex dimer formations in IrTe2.

Quantum oscillations of the metallic triangular-lattice antiferromagnet PdCrO2.

We report the electronic and transport properties of the triangular antiferromagnet PdCrO(2) at high magnetic fields up to 33 T, using measurements of the de Haas-van Alphen oscillations and the Hall resistivity. The de Haas-van Alphen oscillations below the magnetic ordering temperature T(N) reveal several two-dimensional Fermi surfaces of smaller size than those found in nonmagnetic PdCoO(2), consistent with the band structure calculations. This evidences Fermi surface reconstruction due to the 120° helical ordering of the localized Cr spins, suggesting significant coupling of the itinerant electrons to the underlying spin texture. This induces the nonlinear Hall resistivity at low temperatures via the magnetic breakdown in the reconstructed Fermi surface. Furthermore, such a coupling leads to the unconventional anomalous Hall effects near T(N) due to the field-induced spin chirality at high magnetic fields.

Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.

This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.

Improved electrical and optical properties of ITO/Ag/ITO films by using electron beam irradiation and their application to ultraviolet light-emitting diode as highly transparent p-type electrodes.

We have investigated the effect of insertion of a Ag layer in ITO film as well as electron beam irradiation to the multilayer films on the electrical and optical properties of the ITO-based multilayer deposited by magnetron sputtering method at room temperature. Inserting a very thin Ag layer between ITO layers resulted in a significant decrease in sheet resistance and increased the optical band gap of the ITO/Ag/ITO multilayer to 4.35 eV, followed by a high transparency of approximately 80% at a wavelength of 375 nm. We have also fabricated ultraviolet light-emitting diodes (LED) by using the ITO/Ag/ITO p-type electrode with/without electron beam irradiation. The results show that the UV-LEDs having ITO/Ag/ITO p-electrode with electron beam irradiation produced 19% higher optical output power due to the low absorption of light in the p-type electrode.

Anisotropic Dirac fermions in a Bi square net of SrMnBi2.

We report the observation of highly anisotropic Dirac fermions in a Bi square net of SrMnBi(2), based on a first-principles calculation, angle-resolved photoemission spectroscopy, and quantum oscillations for high-quality single crystals. We found that the Dirac dispersion is generally induced in the (SrBi)(+) layer containing a double-sized Bi square net. In contrast to the commonly observed isotropic Dirac cone, the Dirac cone in SrMnBi(2) is highly anisotropic with a large momentum-dependent disparity of Fermi velocities of ~8. These findings demonstrate that a Bi square net, a common building block of various layered pnictides, provides a new platform that hosts highly anisotropic Dirac fermions.

Itinerant spin excitations near the hidden order transition in URu(2)Si(2).

By means of neutron scattering we show that the high temperature precursor to the hidden order state of the heavy fermion superconductor URu(2)Si(2) exhibits heavily damped incommensurate paramagnons whose strong energy dispersion is very similar to that of the long-lived longitudinal f spin excitations that appear below T(0). This suggests that there is a strongly hybridized character to the itinerant excitations observed previously above the hidden order transition. Here we present evidence that the itinerant excitations, like those in chromium, are due to Fermi surface nesting of hole and electron pockets; hence the hidden order phase probably originates from a Fermi surface instability. We identify wavevectors that span nested regions of a f-d hybridized band calculation and that match the neutron spin crossover from incommensurate to commensurate on approach to the hidden order phase.

Quantum Oscillation Signatures of Pressure-induced Topological Phase Transition in BiTeI.

We report the pressure-induced topological quantum phase transition of BiTeI single crystals using Shubnikov-de Haas oscillations of bulk Fermi surfaces. The sizes of the inner and the outer FSs of the Rashba-split bands exhibit opposite pressure dependence up to P = 3.35 GPa, indicating pressure-tunable Rashba effect. Above a critical pressure P ~ 2 GPa, the Shubnikov-de Haas frequency for the inner Fermi surface increases unusually with pressure, and the Shubnikov-de Haas oscillations for the outer Fermi surface shows an abrupt phase shift. In comparison with band structure calculations, we find that these unusual behaviors originate from the Fermi surface shape change due to pressure-induced band inversion. These results clearly demonstrate that the topological quantum phase transition is intimately tied to the shape of bulk Fermi surfaces enclosing the time-reversal invariant momenta with band inversion.

Cloning and characterization of mitochondrial methionyl-tRNA synthetase from a pathogenic fungi Candida albicans.

A genomic sequence encoding mitochondrial methionyl-tRNA synthetase (MetRS) was determined from a pathogenic fungi Candida albicans. The gene is distinct from that encoding the cytoplasmic MetRS. The encoded protein consists of 577 amino acids (aa) and contains the class I defining sequences in the N-terminal domain and the conserved anticodon-binding amino acid, Trp, in the C-terminal domain. This protein showed the highest similarity with the mitochondrial MetRSs of Saccharomyces cerevisiae and Shizosaccharomyces pombe. The mitochondrial MetRSs of these fungi were distinguished from their cytoplasmic forms. The protein lacks the zinc binding motif in the N-terminal domain and the C-terminal dimerization appendix that are present in MetRSs of several other species. Escherichia coli tRNAMet was a substrate for the encoded protein as determined by genetic complementation and in vitro aminoacylation reaction. This cross-species aminoacylation activity suggests the conservation of interaction mode between tRNAMet and MetRS.

Biochemical and phylogenetic analyses of methionyl-tRNA synthetase isolated from a pathogenic microorganism, Mycobacterium tuberculosis.

Mycobacterium tuberculosis methionyl-tRNA synthetase (MetRS) has been cloned and characterized. The protein contains class I signature sequences but lacks the Zn2+ binding motif and the C-terminal dimerization appendix that are found in MetRSs from several organisms including E. coli MetRS. Consistent with these features, the enzyme behaved as a monomer in a gel filtration chromatography and did not contain the bound Zn2+. Nonetheless, it was active to the tRNAMet of E. coli as determined by in vivo genetic complementation and in vitro reaction. Phylogenetic analysis separated the M. tuberculosis and E. coli MetRSs into prokaryote and eukaryote-archaea group, respectively. This result is consistent with the taxonomic locations of the organism but is an interesting contrast to the case of its paralogous protein, isoleucyl-tRNA synthetase, and suggests that the two enzymes evolved in separate idiosyncratic pathways.

A case of anaerobic abscessed hydroxyapatite orbital implants.

The purpose of this report is to document an unusual case of implant infection in a patient who had undergone enucleation and hydroxyapatite orbital implant surgery. A 32-year-old woman presented with chronic orbital discomfort and discharge following a history of hydroxyapatite orbital implant surgery at another hospital 4 years previous. She exhibited profuse discharge with a yellow, creamy color and marked conjunctival chemosis. Granulation tissue was noted on the central conjunctival surface. Following the removal of the conjunctival granulation tissue, a central 3x5 mm conjunctival dehiscence was present with exposure of the hydroxyapatite implant. A culture of purulent drainage emanating from the exposed implant showed a growth of Clostridium acetobutylicum. Removal of the orbital implant was done. The implant was noted to be filled with pus. This case suggests that anaerobic infection may be suspected when the granulation tissue is observed and a discharge with a foul odor is found.

Microporous Ti implant compact coated with hydroxyapatite produced by electro-discharge-sintering and electrostatic-spray-deposition.

A single pulse of 1.5 kJ/0.7 g of atomized spherical Ti powder from 300 µF capacitor was applied to produce the porous-surfaced Ti implant compact by electro-discharge-sintering (EDS). A solid core surrounded by porous layer was self-consolidated by a discharge in the middle of the compact in 122 µsec. Average pore size, porosity, and compressive yield strength of EDS Ti compact were estimated to be about 68.2 µm, 25.5%, and 266.4 MPa, respectively. Coatings with hydroxyapatite (HAp) on the Ti compact were conducted by electrostatic-spray-deposition (ESD) method. As-deposited HAp coating was in the form of porous structure and consisted of HAp particles which were uniformly distributed on the Ti porous structure. By heat-treatment at 700 degrees C, HAp particles were agglomerated each other and melted to form a highly smooth and homogeneous HAp thin film consisted of equiaxed nano-scaled grains. Porous-surfaced Ti implant compacts coated with highly crystalline apatite phase were successfully obtained by using the EDS and ESD techniques.

Surface electronic structure of the topological Kondo-insulator candidate correlated electron system SmB6.

The Kondo insulator SmB6 has long been known to exhibit low-temperature transport anomalies whose origin is of great interest. Here we uniquely access the surface electronic structure of the anomalous transport regime by combining state-of-the-art laser and synchrotron-based angle-resolved photoemission techniques. We observe clear in-gap states (up to ~4 meV), whose temperature dependence is contingent on the Kondo gap formation. In addition, our observed in-gap Fermi surface oddness tied with the Kramers' point topology, their coexistence with the two-dimensional transport anomaly in the Kondo hybridization regime, as well as their robustness against thermal recycling, taken together, collectively provide strong evidence for protected surface metallicity with a Fermi surface whose topology is consistent with the theoretically predicted topological Fermi surface. Our observations of systematic surface electronic structure provide the fundamental electronic parameters for the anomalous Kondo ground state of correlated electron material SmB6.

Chemical pressure induced spin freezing phase transition in kagome pr langasites.

The 2D kagome system Pr3Ga5SiO14 has been previously identified as a spin-liquid candidate in zero field, displaying no magnetic long-ranged order down to at least 35 mK. Perturbations upon such systems, either under applied fields or applied pressure, should induce a spin freezing phase transition, but there are very few experimental realizations of this phenomena other than the well-studied 3D pyrochlore Tb2Ti2O7. In this Letter, we report the observation of a spin freezing phase transition in Pr3Ga5SiO14 through the application of chemical pressure--that is, through a systematic substitution on the Si site with larger ions and an elongation of the nearest-neighbor Pr-Pr distance in the kagome lattice. This results in a suppression of the T2 component of the heat capacity, and the reduction of the exchange constant eventually leads to dipolar-driven spin freezing.

Local moment, itinerancy, and deviation from Fermi-liquid behavior in NaxCoO2 for 0.71< or = x < or =0.84.

Here we report the observation of Fermi surface (FS) pockets via the Shubnikov-de Haas effect in NaxCoO2 for x=0.71 and 0.84, respectively. Our observations indicate that the FS expected for each compound intersects their corresponding Brillouin zones, as defined by the previously reported superlattice structures, leading to small reconstructed FS pockets, but only if a precise number of holes per unit cell is localized. For 0.71< or = x < 0.75 the coexistence of itinerant carriers and localized S=1/2 spins on a paramagnetic triangular superlattice leads at low temperatures to the observation of a deviation from standard Fermi-liquid behavior in the electrical transport and heat capacity properties, suggesting the formation of some kind of quantum spin-liquid ground state.

Interlayer magnetoresistance of quasi-one-dimensional layered organic conductors.

We studied the interlayer magnetoresistance of the representative quasi-one-dimensional (Q1D) layered organic conductor, (TMTSF)2PF6, over the full range of magnetic field orientations in three dimensions, and constructed a stereographic conductivity plot. Our results show that the previously reported angular-dependent magnetoresistance phenomena in Q1D conductors are closely related to one another in intermediate field orientations. Based on a comparison with theories, we can conclude that the Lebed resonance is the only fundamental effect and that other effects result from the modulation of the Lebed resonance amplitude. Most of the observed phenomena can be explained within the framework of the conventional Fermi liquid; however, the anomalous enhancement of the interlayer conductivity under a field parallel to the conducting planes suggests the existence of a new electron state.

Field-induced Fermi surface reconstruction and adiabatic continuity between antiferromagnetism and the hidden-order state in URu2Si2.

Shubnikov-de Haas oscillations reveal at high fields an abrupt reconstruction of the Fermi surface within the hidden-order (HO) phase of URu2Si2. Taken together with reported Hall effect results, this implies an increase in the effective carrier density and suggests that the field suppression of the HO state is ultimately related to destabilizing a gap in the spectrum of itinerant quasiparticles. While hydrostatic pressure favors antiferromagnetism in detriment to the HO state, it has a modest effect on the complex H-T phase diagram. Instead of phase separation between HO and antiferromagnetism our observations indicate adiabatic continuity between both orderings with field and pressure changing their relative weight.

Partial field-induced magnetic order in the spin-liquid kagomé Nd3Ga5SiO14.

The distorted kagomé system Nd3Ga5SiO14 has been investigated with neutron scattering down to 0.046 K with no evidence of magnetic long range order of the Nd3+ moments in a zero field. Substantial diffuse scattering is observed which is in agreement with nearest-neighbor correlations between the fluctuating spins. Upon the application of a field in the c direction, the diffuse scattering is reduced in intensity while the magnetic Bragg peaks grow in intensity to saturate by 1 T to 1/2 of the expected magnetization. These measurements suggest that a unique spin-liquid state develops in Nd3Ga5SiO14 with a frustration index of f approximately |theta|/T_{C}> or =1300.

Shubnikov-de Haas effect in the metallic state of Na0.3CoO2.

Shubnikov-de Haas oscillations for two well-defined frequencies, corresponding, respectively, to areas of 0.8 and 1.36% of the first Brillouin zone, were observed in single crystals of Na(0.3)CoO2. The existence of Na superstructures in Na0.3CoO2, coupled with this observation, suggests the possibility that the periods are due to the reconstruction of the large Fermi surface around the Gamma point. An alternative interpretation in terms of the long sought-after epsilon'(g) pockets is also considered but found to be incompatible with existing specific heat data.