Detalhe da pesquisa
1.
CMOS-Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin.
Small
; : e2310943, 2024 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-38607261
2.
Contact Engineering of Vertically Grown ReS2 with Schottky Barrier Modulation.
ACS Appl Mater Interfaces
; 13(6): 7529-7538, 2021 Feb 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-33544572
3.
Graphene-Edge Electrode on a Cu-Based Chalcogenide Selector for 3D Vertical Memristor Cells.
ACS Appl Mater Interfaces
; 11(46): 43466-43472, 2019 Nov 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-31658414