RESUMO
A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.
RESUMO
Micro-/nanoelectromechanical (MEM/NEM) switches have been extensively studied to address the limitations of transistors, such as the increased standby power consumption and performance dependence on temperature and radiation. However, their lifetimes are limited owing to the degradation of the contact surfaces. Even though several materials and structural designs have been recently developed to improve the lifetime, the production of a microswitch that is compatible with a complementary metal-oxide semiconductor (CMOS) with a long lifetime remains a significant challenge. We demonstrate a vertically actuated MEM switch with extremely high reliability by integrating a carbon nanotube (CNT) network on a gold electrode as the contact material using a low-temperature, CMOS-compatible solution process. In addition to their outstanding mechanical and electrical properties of CNTs, their deformability dramatically increases the effective contact area of the switch, thus resulting in the extension of the lifetime. The CNT-coated MEM switch exhibits a lifetime that is more than 7 × 108 cycles when operated in hot-switching conditions, which is 1.9 × 104 times longer than that of a control device without CNTs. The switch also shows an excellent switching performance, including a low electrical resistance, high on/off ratio, and an extremely small off-state current.
RESUMO
Micro-/nano-electromechanical (M/NEM) switches have received significant attention as promising switching devices for a wide range of applications such as computing, radio frequency communication, and power gating devices. However, M/NEM switches still suffer from unacceptably low reliability because of irreversible degradation at the contacting interfaces, hindering adoption in practical applications and further development. Here, we evaluate and verify graphene as a contact material for reliability-enhanced M/NEM switching devices. Atomic force microscopy experiments and quantum mechanics calculations reveal that energy-efficient mechanical contact-separation characteristics are achieved when a few layers of graphene are used as a contact material on a nickel surface, reducing the energy dissipation by 96.6% relative to that of a bare nickel surface. Importantly, graphene displays almost elastic contact-separation, indicating that little atomic-scale wear, including plastic deformation, fracture, and atomic attrition, is generated. We also develop a feasible fabrication method to demonstrate a MEM switch, which has high-quality graphene as the contact material, and verify that the devices with graphene show mechanically stable and elastic-like contact properties, consistent with our nanoscale contact experiment. The graphene coating extends the switch lifetime >103 times under hot switching conditions.