30-Lens interferometer for high-energy X-rays.

A novel high-energy multi-lens interferometer consisting of 30 arrays of planar compound refractive lenses is reported. Under coherent illumination each lens array creates a diffraction-limited secondary source. Overlapping such coherent beams produces an interference pattern demonstrating strong longitudinal functional dependence. The proposed multi-lens interferometer was tested experimentally at the 100 m-long ID11 ESRF beamline in the X-ray energy range from 30 to 65 keV. The interference pattern generated by the interferometer was recorded at fundamental and fractional Talbot distances. An effective source size (FWHM) of the order of 15 µm was determined from the first Talbot image, proving the concept that the multi-lens interferometer can be used as a high-resolution tool for beam diagnostics.

Large-Area Mapping of Voids and Dislocations in Basal-Faceted Sapphire Ribbons by Synchrotron Radiation Imaging.

The understanding of structural defects in basal-faceted sapphire ribbons was improved through X-ray imaging at a synchrotron source. The combination of phase contrast and X-ray diffraction makes it possible to visualize and characterize both gas voids and dislocations in the bulk of the ribbons grown by the Stepanov-LaBelle technology. Dislocations were directly related to gas voids. X-ray diffraction topography was employed to investigate the distribution, configurations, and character of the dislocations. The formation of voids of irregular shapes was detected by large-area mapping with spatial resolution in the µm range. Computer simulations of the experimental phase contrast images of microvoids were performed. The sizes of the spherical microvoids were determined. The results are discussed with reference to the available data on the emission of dislocations from the voids. The evolution of the shape, size, and arrangement of the voids during growth provides clues on the formation of block structure in basal-faceted sapphire ribbons.

Problems with Evaluation of Micro-Pore Size in Silicon Carbide Using Synchrotron X-ray Phase Contrast Imaging.

We report near- and far-field computer simulations of synchrotron X-ray phase-contrast images using a micropipe in a SiC crystal as a model system. Experimental images illustrate the theoretical results. The properties of nearly perfect single crystals of silicon carbide are strongly affected by µm-sized pores even if their distribution in a crystal bulk is sparse. A non-destructive technique to reveal the pores is in-line phase-contrast imaging with synchrotron radiation. A quantitative approach to evaluating pore sizes is the use of computer simulations of phase-contrast images. It was found that near-field phase-contrast images are formed at very short distances behind a sample. We estimated these distances for tiny pores. The Fresnel zones did not provide any information on the pore size in the far-field, but a contrast value within the first Fresnel zone could be used for simulations. Finally, general problems in evaluating a micro-pore size via image analysis are discussed.