Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Mais filtros

Base de dados
Tipo de documento
Intervalo de ano de publicação
1.
Appl Opt ; 53(10): 2030-6, 2014 Apr 01.
Artigo em Inglês | MEDLINE | ID: mdl-24787158

RESUMO

We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF4 laser. We obtain a maximum peak power of 61.6 W (8.7 µJ/pulse at 7.7 kHz) and 594 W (19.0 µJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.

2.
Appl Opt ; 51(9): 1382-6, 2012 Mar 20.
Artigo em Inglês | MEDLINE | ID: mdl-22441486

RESUMO

We demonstrate pulse laser operation of a Pr:LiYF(4) laser pumped by InGaN laser diodes (444 nm) using an acousto-optic modulator. We obtained a maximum laser peak power of 167 W (4 µJ/pulse) with a pulse width of 24 ns at an 11 kHz repetition rate for a 63 nm wavelength. Employing an 8 mm long lithium triborate nonlinear crystal in the laser cavity, we obtained a maximum peak power of 55 W (2.7 µJ/pulse) at 320 nm, which corresponds to a conversion efficiency of 69% with respect to the fundamental laser energy. The UV laser pulse width was 36 ns.


Assuntos
Lasers Semicondutores , Lasers de Estado Sólido , Cor , Flúor/química , Lítio/química , Praseodímio/química , Ítrio/química
SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA