NaCl Ionization-Based Moisture Sensor Prepared by Aerosol Deposition for Monitoring Respiratory Patterns.

A highly polarizable moisture sensor with multimodal sensing capabilities has great advantages for healthcare applications such as human respiration monitoring. We introduce an ionically polarizable moisture sensor based on NaCl/BaTiO3 composite films fabricated using a facile aerosol deposition (AD) process. The proposed sensing model operates based on an enormous NaCl ionization effect in addition to natural moisture polarization, whereas all previous sensors are based only on the latter. We obtained an optimal sensing performance in a 0.5 µm-thick layer containing NaCl-37.5 wt% by manipulating the sensing layer thickness and weight fraction of NaCl. The NaCl/BaTiO3 sensing layer exhibits outstanding sensitivity over a wide humidity range and a fast response/recovery time of 2/2 s; these results were obtained by performing the one-step AD process at room temperature without using any auxiliary methods. Further, we present a human respiration monitoring system using a sensing device that provides favorable and stable electrical signals under diverse respiratory scenarios.

Classification of Standing and Walking States Using Ground Reaction Forces.

The operation of wearable robots, such as gait rehabilitation robots, requires real-time classification of the standing or walking state of the wearer. This report explains a technique that measures the ground reaction force (GRF) using an insole device equipped with force sensing resistors, and detects whether the insole wearer is standing or walking based on the measured results. The technique developed in the present study uses the waveform length that represents the sum of the changes in the center of pressure within an arbitrary time window as the determining factor, and applies this factor to a conventional threshold method and an artificial neural network (ANN) model for classification of the standing and walking states. The results showed that applying the newly developed technique could significantly reduce classification errors due to shuffling movements of the patient, typically noticed in the conventional threshold method using GRF, i.e., real-time classification of the standing and walking states is possible in the ANN model. The insole device used in the present study can be applied not only to gait analysis systems used in wearable robot operations, but also as a device for remotely monitoring the activities of daily living of the wearer.

Titanium-oxide based nanoscale and embeddable subzero temperature sensor using MIT deformation characteristics.

In this research, we propose a nanoscale and embeddable subzero temperature sensor that is made with a temperature-dependent titanium-oxide based metal-insulator-transition (MIT) device. For a nanoscale two-terminal structured MIT device, the MIT device's characteristics are noticeably changed from abrupt to gradual MIT under zero temperature, which is called MIT deformation. On the basis of the MIT deformation characteristics, subzero temperatures can be detected by reading current levels as temperature changes. Furthermore, this sensor has desirable sensing properties such as high-linearity and proper sensitivity. The obtained results strongly show that titanium-oxides with CMOS process compatibility, cost-effectiveness, nontoxicity, etc, can be applied at the nanoscale and embeddable on subzero temperature sensors on a chip.

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Photosensitive properties of ZnO/p-SiC heterojunction structures.

We investigated the effect of the substrate temperature (T(s)) on the photosensitive properties of ZnO/4H-SiC structures. A ZnO thin film layer was grown on p-type 4H-SiC substrate (0001) by pulsed laser deposition (PLD) deposited at different substrate temperatures (T(s)) of 200, 400, and 600 degrees C, respectively. It was shown that the specific contact resistance of ZnO on p-type 4H-SiC, which was increased from -1.92 x10(-4) to -4.4 omega x cm2 as T(s) increases. On the other hand, the rate of oxygen outdiffusion decreases for the temperature T(s) increase, as observed by transmission line method (TLM) and auger electron spectroscopy (AES) profile. In addition, high photoresponsivity was observed for the ZnO (T(s) -200 degrees C) on p-type 4H-SiC hetero-junction diodes at ultraviolet region (wavelength of -250 nm), comparing to visible (wavelength of -550 nm) and infrared (wavelength of -880 nm). These results may suggest that the ZnO/p-SiC may be applied to optical sensor applications.

The effect of channel width on the performance of AlGaN/GaN nanowire field effect transistors.

AIGaN/GaN nanowire (NW) FETs with a channel width down to -300 nm has been fabricated by "top-down" approach by using electron-beam lithography process. The fabricated AIGaN/GaN NW FETs showed the minimum threshold voltage -3 V, the gate leakage current -10(-10) A/mm, and the maximum transconductance -216 mS/mm, respectively. It has also been demonstrated that the gate controllability of the AIGaN/GaN FETs is improved with decreasing channel width. In the fabricated devices the threshold voltage V(th) for the NW FETs with a width of -300 nm shows a positive shift (deltaV(th) = 2.5 V) with respect to that of the reference FETs. This can be attributed the change in carrier density of the two dimensional electron gas generated at the interface of an AlGaN/GaN.

Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method.

In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 2H2O) and aluminum chloride hexahydrate (AlCl3 x 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.

Investigation of the Effect of Double-Filler Atoms on the Thermoelectric Properties of Ce-YbCo4Sb12.

Skutterudite compounds have been studied as potential thermoelectric materials due to their high thermoelectric efficiency, which makes them attractive candidates for applications in thermoelectric power generation. In this study, the effects of double-filling on the thermoelectric properties of the CexYb0.2-xCo4Sb12 skutterudite material system were investigated through the process of melt spinning and spark plasma sintering (SPS). By replacing Yb with Ce, the carrier concentration was compensated for by the extra electron from Ce donors, leading to optimized electrical conductivity, Seebeck coefficient, and power factor of the CexYb0.2-xCo4Sb12 system. However, at high temperatures, the power factor showed a downturn due to bipolar conduction in the intrinsic conduction regime. The lattice thermal conductivity of the CexYb0.2-xCo4Sb12 skutterudite system was clearly suppressed in the range between 0.025 and 0.1 for Ce content, due to the introduction of the dual phonon scattering center from Ce and Yb fillers. The highest ZT value of 1.15 at 750 K was achieved for the Ce0.05Yb0.15Co4Sb12 sample. The thermoelectric properties could be further improved by controlling the secondary phase formation of CoSb2 in this double-filled skutterudite system.

Fabrication of Large-Area Mullite-Cordierite Composite Substrates for Semiconductor Probe Cards and Enhancement of Their Reliability.

This work aims to fabricate a large-area ceramic substrate for the application of probe cards. Mullite (M) and cordierite (C), which both have a low thermal expansion coefficient, excellent resistance to thermal shock, and high durability, were selected as starting powders. The mullite-cordierite composites were produced through different composition ratios of starting powders (M:C = 100:0, M:C = 90:10, M:C = 70:30, M:C = 50:50, M:C = 30:70, and M:C = 0:100). The effects of composition ratio and sintering temperature on the density, porosity, thermal expansion coefficient, and flexural strength of the mullite-cordierite composite pellets were investigated. The results showed that the mullite-cordierite composite pellet containing 70 wt% mullite and 30 wt% cordierite sintered at 1350 °C performed exceptionally well. Based on these findings, a large-area mullite-cordierite composite substrate with a diameter of 320 mm for use in semiconductor probe cards was successfully fabricated. Additionally, the changes in sheet resistance and flexural strength were measured to determine the effect of the environmental tests on the large-area substrate such as damp heat and thermal shock. The results indicated that the mullite-cordierite composite substrate was extremely reliable and durable.

Enhanced Production of Bacterial Cellulose from Miscanthus as Sustainable Feedstock through Statistical Optimization of Culture Conditions.

Biorefineries are attracting attention as an alternative to the petroleum industry to reduce carbon emissions and achieve sustainable development. In particular, because forests play an important role in potentially reducing greenhouse gas emissions to net zero, alternatives to cellulose produced by plants are required. Bacterial cellulose (BC) can prevent deforestation and has a high potential for use as a biomaterial in various industries such as food, cosmetics, and pharmaceuticals. This study aimed to improve BC production from lignocellulose, a sustainable feedstock, and to optimize the culture conditions for Gluconacetobacter xylinus using Miscanthus hydrolysates as a medium. The productivity of BC was improved using statistical optimization of the major culture parameters which were as follows: temperature, 29 °C; initial pH, 5.1; and sodium alginate concentration, 0.09% (w/v). The predicted and actual values of BC production in the optimal conditions were 14.07 g/L and 14.88 g/L, respectively, confirming that our prediction model was statistically significant. Additionally, BC production using Miscanthus hydrolysates was 1.12-fold higher than in the control group (commercial glucose). Our result indicate that lignocellulose can be used in the BC production processes in the near future.

Thermoelectric Properties of Cu2Te Nanoparticle Incorporated N-Type Bi2Te2.7Se0.3.

To develop highly efficient thermoelectric materials, the generation of homogeneous heterostructures in a matrix is considered to mitigate the interdependency of the thermoelectric compartments. In this study, Cu2Te nanoparticles were introduced onto Bi2Te2.7Se0.3 n-type materials and their thermoelectric properties were investigated in terms of the amount of Cu2Te nanoparticles. A homogeneous dispersion of Cu2Te nanoparticles was obtained up to 0.4 wt.% Cu2Te, whereas the Cu2Te nanoparticles tended to agglomerate with each other at greater than 0.6 wt.% Cu2Te. The highest power factor was obtained under the optimal dispersion conditions (0.4 wt.% Cu2Te incorporation), which was considered to originate from the potential barrier on the interface between Cu2Te and Bi2Te2.7Se0.3. The Cu2Te incorporation also reduced the lattice thermal conductivity, and the dimensionless figure of merit ZT was increased to 0.75 at 374 K for 0.4 wt.% Cu2Te incorporation compared with that of 0.65 at 425 K for pristine Bi2Te2.7Se0.3. This approach could also be an effective means of controlling the temperature dependence of ZT, which could be modulated against target applications.

Fabrication and characterization of nano-channel field effect transistors patterned by AFM anodic oxidation.

We report a top-down approach based on atomic force microscope (AFM) local anodic oxidation (LAO) for the fabrications of the nanowire and nano-ribbon field effect transistors (FETs). In order to investigate the transport characteristics of nano-channel, we fabricated simple FET structures with channel width W approximately 300 nm (nanowire) and 10 microm (nano-ribbon) on 20 nm-thick silicon-on-insulator (SOL) wafers. In order to investigate the transport behavior in the device with different channel geometries, we have performed detailed two-dimensional simulations of nanowire and reference nano-ribbon FETs with a fixed channel length L and thickness t but varying channel width W from 300 nm to 10 microm. By evaluating the charge distributions, we have shown that the increase of 'on state' conduction current in SiNW channel is a dominant factor, which consequently result in the improved on/off current ratio of the nanowire FET.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC.

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10-16 cm-2 and the trap concentration was reduced by approximately 40 times.

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.

In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N2 or O2 gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current-voltage (I-V) curve. The voltage-temperature (V-T) characteristics of the sensor were extracted from the current-voltage-temperature (I-V-T) plots constructed in the temperature range between 475 and 300 K in steps of 25 K. Sensitivities of 9.77, 9.37, and 2.16 mV/K were obtained for the as-grown, N2-annealed, and O2-annealed samples, respectively.

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes.

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 µA, the PiN diode presented the highest sensitivity peak (4.11 mV K-1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K-1 and 1.9 mV K-1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 µA±10 µA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 µA±10 µA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

Development of Colorimetric Whole-Cell Biosensor for Detection of Heavy Metals in Environment for Public Health.

Heavy metals cause various fetal diseases in humans. Heavy metals from factory wastewater can contaminate drinking water, fish, and crops. Inductively coupled plasma-mass spectrometry (ICP-MS) and atomic absorption spectrometry (AAS) are commonly used to analyze heavy metal contents; however, these methods require pre-treatment processes and are expensive and complex. To overcome these limitations, three metal-sensing materials using a whole-cell biosensor in Escherichia coli (E. coli) were developed. Strains were engineered to harbor three kinds of plasmids containing the copA, zntA, and mer promoters for sensing copper, cadmium, and mercury, respectively. The luciferase (lux) gene was inserted as a reporter into the plasmid, which was later replaced with a fused protein sequence containing OmpA (1-159) and mCherry for optical detection. The constructed strains could detect mercury, cadmium, and copper at 0.1-0.75 ppm, 0.2-0.75 ppm, and 2-7.5 ppm, respectively, with linearity values of 0.99030, 0.99676, and 0.95933, respectively. The immobilization linearity value was 0.99765. Notably, these three heavy metals could be detected by visual analysis of the strains. Overall, these findings establish this novel sensor as a potential approach for heavy metal detection in biological samples and foods.

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter.

In this study, static induction transistors (SITs) with beta gallium oxide (ß-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm2V-1s-1). The gate leakage current is as low as 1.0 × 10-11 A at VGS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O3-treated SITs exhibit higher (approximately 1.64 × 102 times) drain current (VDS = 12 V) and on/off ratio (4.32 × 105) than non-treated control devices.

Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process.

We propose a Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure whose blocking oxide is formed by radical oxidation on the silicon nitride (Si3N4) layer to improve the electrical and reliability characteristics. We directly compare the electrical and reliability properties of the MONOS capacitors with two different blocking oxide (SiO2) layers, which are called a "radical oxide" grown by the radical oxidation and a "CVD oxide" deposited by chemical vapor deposition (CVD) respectively. The MONOS capacitor with a radical oxide shows a larger C-V memory window of 3.6 V at sweep voltages from 9 V to -9 V, faster program/erase speeds of 1 micros/1 ms at bias voltages of -6 V and 8 V, a lower leakage current of 7 pA and a longer data retention, compared to those of the MONOS capacitor with a CVD oxide. These improvements have been attributed to both high densification of blocking oxide film and increased nitride-related memory traps at the interface between the blocking oxide and Si3N4 layer by radical oxidation.

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes.

The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density-voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.