Metallic Nanowire-Based Transparent Electrodes for Next Generation Flexible Devices: a Review.

Transparent electrodes attract intense attention in many technological fields, including optoelectronic devices, transparent film heaters and electromagnetic applications. New generation transparent electrodes are expected to have three main physical properties: high electrical conductivity, high transparency and mechanical flexibility. The most efficient and widely used transparent conducting material is currently indium tin oxide (ITO). However the scarcity of indium associated with ITO's lack of flexibility and the relatively high manufacturing costs have a prompted search into alternative materials. With their outstanding physical properties, metallic nanowire (MNW)-based percolating networks appear to be one of the most promising alternatives to ITO. They also have several other advantages, such as solution-based processing, and are compatible with large area deposition techniques. Estimations of cost of the technology are lower, in particular thanks to the small quantities of nanomaterials needed to reach industrial performance criteria. The present review investigates recent progress on the main applications reported for MNW networks of any sort (silver, copper, gold, core-shell nanowires) and points out some of the most impressive outcomes. Insights into processing MNW into high-performance transparent conducting thin films are also discussed according to each specific application. Finally, strategies for improving both their stability and integration into real devices are presented.

Wafer Scale Insulation of High Aspect Ratio Through-Silicon Vias by iCVD.

In microelectronics, one of the main 3D integration strategies consists of vertically stacking and electrically connecting various functional chips using through-silicon vias (TSVs). For the fabrication of the TSVs, one of the challenges is to conformally deposit a low dielectric constant insulator thin film at the surface of the silicon. To date, there is no universal technique that can address all types of TSV integration schemes, especially in the case requiring a low deposition temperature. In this work, an organosilicate polymer deposited by initiated chemical vapor deposition (iCVD) was developed and integrated as an insulating layer for TSVs. Process studies have shown that poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (P(V3D3)) can present good conformality on high aspect ratio features by increasing the substrate temperature up to 100 °C. The trade-off is a moderate deposition rate. The thermal stability of the polymer has been investigated, and we show that a thermal annealing at 400 °C (with or without ultraviolet exposure) allows the stabilization of the dielectric films by removing residual oligomers. Then, P(V3D3) was integrated in high aspect ratio TSV (10 × 100 µm) on 300 mm silicon wafers using a standard integration flow for TSV metallization. Functional devices were successfully fabricated (including daisy chains of 754 TSVs) and electrically characterized. Our work shows that the metallization barrier should be carefully selected to eliminate the appearance of voids at the top corner of the TSV after the Cu annealing step. Moreover, an appropriate integration process should be used to avoid the appearance of cohesive cracks in the liner. This work constitutes a first proof of concept of the use of an iCVD polymer in a quasi-industrial microelectronic environment. It also highlights the benefit of iCVD as a promising technique to deposit conformal dielectric thin films in a microelectronic pilot line environment.

Percolation in networks of 1-dimensional objects: comparison between Monte Carlo simulations and experimental observations.

Planar networks composed of 1-dimensional nanometer scale objects such as nanotubes or nanowires have been attracting growing interest in recent years. In this work we directly compare the percolation threshold of silver nanowire networks to predictions from Monte Carlo simulations, focusing particularly on understanding the impact of real world imperfections on the percolation onset in these systems. This work initially determines the percolation threshold as calculated from an ideal system using Monte Carlo methods. On this foundation we address the effects of perturbations in length, angular anisotropy and radius of curvature of the 1-dimensional objects, in line with those observed experimentally in purposely fabricated samples. This work explores why two-dimensional stick models in the literature currently underestimate the percolation onset in real systems and identifies which of the network's features play the most significant role in that deviation.

Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration.

The past few years have seen a considerable amount of research devoted to nanostructured transparent conducting materials (TCM), which play a pivotal role in many modern devices such as solar cells, flexible light-emitting devices, touch screens, electromagnetic devices, and flexible transparent thin film heaters. Currently, the most commonly used TCM for such applications (ITO: Indium Tin oxide) suffers from two major drawbacks: brittleness and indium scarcity. Among emerging transparent electrodes, silver nanowire (AgNW) networks appear to be a promising substitute to ITO since such electrically percolating networks exhibit excellent properties with sheet resistance lower than 10 Ω/sq and optical transparency of 90%, fulfilling the requirements of most applications. In addition, AgNW networks also exhibit very good mechanical flexibility. The fabrication of these electrodes involves low-temperature processing steps and scalable methods, thus making them appropriate for future use as low-cost transparent electrodes in flexible electronic devices. This contribution aims to briefly present the main properties of AgNW based transparent electrodes as well as some considerations relating to their efficient integration in devices. The influence of network density, nanowire sizes, and post treatments on the properties of AgNW networks will also be evaluated. In addition to a general overview of AgNW networks, we focus on two important aspects: (i) network instabilities as well as an efficient Atomic Layer Deposition (ALD) coating which clearly enhances AgNW network stability and (ii) modelling to better understand the physical properties of these networks.