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Magnetic anisotropy is a crucial characteristic for enhancing the spintronic device performance. The synthesis of SmCrGe3 single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved by using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Electrical transport and specific heat measurements indicate a Curie temperature (TC) of approximately 160 K, while magnetization measurements were utilized to determine the anisotropy fields and constants. Curie-Weiss fitting applied to magnetization data suggests the contribution of both Sm and Cr in the paramagnetic phase. Additionally, density functional theory (DFT) calculations explored the electronic structures and magnetic properties of SmCrGe3, revealing a significant easy-axis single-ion Sm magnetocrystalline anisotropy of 16 meV/fu. Based on the magnetization measurements, easy-axis magnetocrystalline anisotropy at 20 K is 13 meV/fu.
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[Fe(en)(tren)][FeSe2]2 (en = ethylenediamine, C2H8N2, tren = tris(2-aminoethyl)amine, C6H18N4) has been synthesized by a mixed-ligand solvothermal method. Its crystal structure contains heteroleptic [Fe(en)(tren)]2+ complexes with distorted octahedral coordination, incorporated between 1D-FeSe2 chains composed of edge-sharing FeSe4 tetrahedra. The twisted octahedral coordination environment of the Fe-amine complex leads to partial dimerization of Fe-Fe distances in the FeSe2 chains so that the FeSe4 polyhedra deviate strongly from the regular tetrahedral geometry. 57Fe Mössbauer spectroscopy reveals oxidation states of +3 for the Fechain atoms and +2 for the Fecomplex atoms. The close proximity of Fe atoms in the chains promotes ferromagnetic nearest neighbor interactions, as indicated by a positive Weiss constant, θ = +53.8(6) K, derived from the Curie-Weiss fitting. Magnetometry and heat capacity reveal two consecutive magnetic transitions below 10 K. DFT calculations suggest that the ordering observed at 4 K is due to antiferromagnetic intrachain interactions in the 1D-FeSe2 chains. The combination of two different ligands creates an asymmetric coordination environment that induces changes in the structure of the Fe-Se fragments. This synthetic strategy opens new ways to explore the effects of ligand field strength on the structure of both Fe-amine complexes and surrounding Fe-Se chains.
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A novel mixed-valent hybrid chiral and polar compound, Fe7As3Se12(en)6(H2O), has been synthesized by a single-step solvothermal method. The crystal structure consists of 1D [Fe5Se9] chains connected via [As3Se2]-Se pentagonal linkers and charge-balancing interstitial [Fe(en)3]2+ complexes (en = ethylenediamine). Neutron powder diffraction verified that interstitial water molecules participate in the crystal packing. Magnetic polarizability of the produced compound was confirmed by X-ray magnetic circular dichroism (XMCD) spectroscopy. X-ray absorption spectroscopy (XAS) and 57Fe Mössbauer spectroscopy showed the presence of mixed-valent Fe2+/Fe3+ in the Fe-Se chains. Magnetic susceptibility measurements reveal strong antiferromagnetic nearest neighbor interactions within the chains with no apparent magnetic ordering down to 2 K. Hidden short-range magnetic ordering below 70 K was found by 57Fe Mössbauer spectroscopy, showing that a fraction of the Fe3+/Fe2+ in the chains are magnetically ordered. Nevertheless, complete magnetic ordering is not achieved even at 6 K. Analysis of XAS spectra demonstrates that the fraction of Fe3+ in the chain increases with decreasing temperature. Computational analysis points out several competing ferrimagnetic ordered models within a single chain. This competition, together with variation in the Fe oxidation state and additional weak intrachain interactions, is hypothesized to prevent long-range magnetic ordering.
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Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi2 Se3 -based dilute ferromagnetic (FM) TIs and MnBi2 Te4 (MBT)-based antiferromagnetic (AFM) TIs. Despite its nascent ferromagnetism, the inelastic neutron scattering data show that a fraction of the Mn defects in Sb2 Te3 form strong AFM dimer singlets within a quintuple block. The AFM superexchange coupling occurs via Mn-Te-Mn linear bonds and is identical to the AFM coupling between antisite defects and the FM Mn layer in MBT, establishing common interactions in the two materials classes. It is also found that the FM correlations in (Sb1-x Mnx )2 Te3 are likely driven by magnetic defects in adjacent quintuple blocks across the van der Waals gap. In addition to providing answers to long-standing questions about the evolution of FM order in dilute TI, these results also show that the evolution of global magnetic order from AFM to FM in Sb-substituted MBT is controlled by defect engineering of the intrablock and interblock coupling.
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The interaction between strong correlation and Berry curvature is an open territory of in the field of quantum materials. Here we report large anomalous Hall conductivity in a Kondo lattice ferromagnet USbTe which is dominated by intrinsic Berry curvature at low temperatures. However, the Berry curvature induced anomalous Hall effect does not follow the scaling relation derived from Fermi liquid theory. The onset of the Berry curvature contribution coincides with the Kondo coherent temperature. Combined with ARPES measurement and DMFT calculations, this strongly indicates that Berry curvature is hosted by the flat bands induced by Kondo hybridization at the Fermi level. Our results demonstrate that the Kondo coherence of the flat bands has a dramatic influence on the low temperature physical properties associated with the Berry curvature, calling for new theories of scaling relations of anomalous Hall effect to account for the interaction between strong correlation and Berry curvature.
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In this work, we employ density functional theory simulations to investigate possible spin polarization of CeO2-(111) surface and its impact on the interactions between a ceria support and Pt nanoparticles. With a Gaussian type orbital basis, our simulations suggest that the CeO2-(111) surface exhibits a robust surface spin polarization due to the internal charge transfer between atomic Ce and O layers. In turn, it can lower the surface oxygen vacancy formation energy and enhance the oxide reducibility. We show that the inclusion of spin polarization can significantly reduce the major activation barrier in the proposed reaction pathway of CO oxidation on ceria-supported Pt nanoparticles. For metal-support interactions, surface spin polarization enhances the bonding between Pt nanoparticles and ceria surface oxygen, while CO adsorption on Pt nanoparticles weakens the interfacial interaction regardless of spin polarization. However, the stable surface spin polarization can only be found in the simulations based on the Gaussian type orbital basis. Given the potential importance in the design of future high-performance catalysts, our present study suggests a pressing need to examine the surface ferromagnetism of transition metal oxides in both experiment and theory.
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Two-dimensional magnetic materials (2DMMs) are significant not only for studies on the nature of 2D long-range magnetic order but also for future spintronic devices. Of particular interest are 2DMMs where spins can be manipulated by electrical conduction. Whereas Cr2Si2Te6 exhibits magnetic order in few-layer crystals, its large band gap inhibits electronic conduction. Here we show that the defect-induced short-range crystal order in Cr2Si2Te6, on the length scale below 0.6 nm, induces a substantially reduced band gap and robust semiconducting behavior down to 2 K that turns to metallic above 10 GPa. Our results will be helpful in designing conducting states in 2DMMs and call for spin-resolved measurement of the electronic structure in exfoliated ultrathin crystals.
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The aim of this study was to investigate an accuracy of modified CAD/CAM generated wafers for orthognathic surgery. A total of 20 patients who had undergone bimaxillary orthognathic surgery were included and divided into two groups: A conventional CAD/CAM generated intermediate wafer and a modified CAD/CAM generated intermediate wafer. A series of CT images were taken to compare the virtual simulations with the actual postoperative outcomes(1 month after surgery). In conventional group, the mean difference of maxillary position between virtual simulation models and postoperative results was 0.78mm and overall average error within 1mm was observed in 66.4% of the repositioned maxilla. In modified group, the mean difference was 0.77mm and overall average error within 1mm was observed in 68.3%. There were no significant statistic differences between two groups in maxillary position. This study suggests that the CAD/CAM generated wafer provides excellent accuracy. The modified CAD/CAM wafer was only comparable to conventional design in accuracy and it cannot guarantee the superior precision. However, the modified design could be beneficial in cases with unstable condylar position or for inexperienced surgeons.
Assuntos
Desenho Assistido por Computador , Maxila/cirurgia , Procedimentos Cirúrgicos Ortognáticos/métodos , Adolescente , Adulto , Cefalometria , Simulação por Computador , Feminino , Humanos , Processamento de Imagem Assistida por Computador/métodos , Imageamento Tridimensional/métodos , Masculino , Planejamento de Assistência ao Paciente , Período Pós-Operatório , Impressão Tridimensional , Reprodutibilidade dos Testes , Cirurgia Assistida por Computador/métodos , Tomografia Computadorizada por Raios X/métodos , Adulto JovemRESUMO
We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave resonating valence bond superconductors in which superconductivity is strongly enhanced by the emergence of spatially varying plaquette bond order.