Cationic iridium complexes with intramolecular π-π interaction and enhanced steric hindrance for solid-state light-emitting electrochemical cells.

Cationic iridium complexes incorporated 4,5-diaza-9,9'-spirobifluorene as N(∧)N ancillary ligands, in which one (2) or two (3) phenyl groups were introduced onto 4,5-diazafluorene to afford intraligand π-π interactions. The X-ray crystal structures of complexes 2 and 3 show that the pendant phenyl ring forms strong intramolecular face-to-face π-stacking with the difluorophenyl ring of the cyclometalated ligand with distances of 3.38 Å for complex 2 and 3.40 and 3.46 Å for complex 3. This π-π stacking interaction minimizes the expansion of the metal-ligand bonds in the excited state, resulting in a longer device lifetime in the light-emitting electrochemical cell (LEC) devices.

Improving the balance of carrier mobilities of host-guest solid-state light-emitting electrochemical cells.

We report efficient host-guest solid-state light-emitting electrochemical cells (LECs) utilizing a cationic terfluorene derivative as the host and a red-emitting cationic transition metal complex as the guest. Carrier trapping induced by the energy offset in the lowest unoccupied molecular orbital (LUMO) levels between the host and the guest impedes electron transport in the host-guest films and thus improves the balance of carrier mobilities of the host films intrinsically exhibiting electron preferred transporting characteristics. Photoluminescence measurements show efficient energy transfer in this host-guest system and thus ensure predominant guest emission at low guest concentrations, rendering significantly reduced self-quenching of guest molecules. EL measurements show that the peak EQE (power efficiency) of the host-guest LECs reaches 3.62% (7.36 lm W(-1)), which approaches the upper limit that one would expect from the photoluminescence quantum yield of the emissive layer (∼0.2) and an optical out-coupling efficiency of ∼20% and consequently indicates superior balance of carrier mobilities in such a host-guest emissive layer. These results are among the highest reported for red-emitting LECs and thus confirm that in addition to reducing self-quenching of guest molecules, the strategy of utilizing a carrier transporting host doped with a proper carrier trapping guest would improve balance of carrier mobilities in the host-guest emissive layer, offering an effective approach for optimizing device efficiencies of LECs.

Tailoring carrier injection efficiency to improve the carrier balance of solid-state light-emitting electrochemical cells.

We study the influence of the carrier injection efficiency on the performance of light-emitting electrochemical cells (LECs) based on a hole-preferred transporting cationic transition metal complex (CTMC) [Ir(dfppz)(2)(dtb-bpy)](+)(PF(6)(-)) (complex 1) and an electron-preferred transporting CTMC [Ir(ppy)(2)(dasb)](+)(PF(6)(-)) (complex 2) (where dfppz is 1-(2,4-difluorophenyl) pyrazole, dtb-bpy is 4,4'-di(tert-butyl)-2,2'-bipyridine, ppy is 2-phenylpyridine and dasb is 4,5-diaza-9,9'-spirobifluorene). Experimental results show that even with electrochemically doped layers, the ohmic contacts for carrier injection could be formed only when the carrier injection barriers were relatively low. Thus, adding carrier injection layers in LECs with relatively high carrier injection barriers would affect carrier balance and thus would result in altered device efficiency. Comparison of the device characteristics of LECs based on complex 1 and 2 in various device structures suggests that the carrier injection efficiency of CTMC-based LECs should be modified according to the carrier transporting characteristics of CTMCs to optimize device efficiency. Hole-preferred transporting CTMCs should be combined with an LEC structure with a relatively high electron injection efficiency, while a relatively high hole injection efficiency would be required for LECs based on electron-preferred transporting CTMCs. Since the tailored carrier injection efficiency compensates for the unbalanced carrier transporting properties of the emissive layer, the carrier recombination zone would be located near the center of the emissive layer and exciton quenching near the electrodes would be significantly mitigated, rendering an improved device efficiency approaching the upper limit expected from the photoluminescence quantum yield of the emissive layer and the optical outcoupling efficiency from a typical layered light-emitting device structure.

Phosphorescent sensitized fluorescent solid-state near-infrared light-emitting electrochemical cells.

We report phosphorescent sensitized fluorescent near-infrared (NIR) light-emitting electrochemical cells (LECs) utilizing a phosphorescent cationic transition metal complex [Ir(ppy)(2)(dasb)](+)(PF(6)(-)) (where ppy is 2-phenylpyridine and dasb is 4,5-diaza-9,9'-spirobifluorene) as the host and two fluorescent ionic NIR emitting dyes 3,3'-diethyl-2,2'-oxathiacarbocyanine iodide (DOTCI) and 3,3'-diethylthiatricarbocyanine iodide (DTTCI) as the guests. Photoluminescence measurements show that the host-guest films containing low guest concentrations effectively quench host emission due to efficient host-guest energy transfer. Electroluminescence (EL) measurements reveal that the EL spectra of the NIR LECs doped with DOTCI and DTTCI center at ca. 730 and 810 nm, respectively. Moreover, the DOTCI and DTTCI doped NIR LECs achieve peak EQE (power efficiency) up to 0.80% (5.65 mW W(-1)) and 1.24% (7.84 mW W(-1)), respectively. The device efficiencies achieved are among the highest reported for NIR LECs and thus confirm that phosphorescent sensitized fluorescence is useful for achieving efficient NIR LECs.