Distance dependence of the energy transfer rate from a single semiconductor nanostructure to graphene.

The near-field Coulomb interaction between a nanoemitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, (i) zero-dimensional CdSe/CdS nanocrystals and (ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances d, the energy transfer rate from individual nanocrystals to graphene decays as 1/d(4). In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.

Seeding molecular rotators on a passivated silicon surface.

Thermally activated rotation of single molecules adsorbed on a silicon-based surface between 77 and 150 K has been successfully achieved. This remarkable phenomenon relies on a nanoporous supramolecular network, which acts as a template to seed periodic molecule rotors on the surface. Thermal activation of rotation has been demonstrated by STM experiments and confirmed by theoretical calculations.

Correction: Nanoscale imaging of antiferromagnetic domains in epitaxial films of Cr2O3 via scanning diamond magnetic probe microscopy.

[This corrects the article DOI: 10.1039/D2RA06440E.].

Angular dependence of the magnetization relaxation in Co/Pt multilayers.

We study the influence of defects in Co/Pt multilayers on the room-temperature magnetization reversal and relaxation mechanisms via angle-dependent magnetic viscosity and coercive field measurements. The data reveal a transition from pinning-dominated domain wall propagation to a sequence of pinning-dominated and uniform switching, with increasing tilt away from the normal direction. The leading role of the dendritic domain wall propagation in the nanogranular exchange-coupled films is corroborated by the scaling of relaxation times, the angular dependence of the coercive field, and Kerr microscopy.

Nanoscale imaging of antiferromagnetic domains in epitaxial films of Cr2O3 via scanning diamond magnetic probe microscopy.

We report direct imaging of boundary magnetization associated with antiferromagnetic domains in magnetoelectric epitaxial Cr2O3 thin films using diamond nitrogen vacancy microscopy. We found a correlation between magnetic domain size and structural grain size which we associate with the domain formation process. We performed field cooling, i.e., cooling from above to below the Néel temperature in the presence of a magnetic field, which resulted in the selection of one of the two otherwise degenerate 180° domains. Lifting of such a degeneracy is achievable with a magnetic field alone due to the Zeeman energy of a weak parasitic magnetic moment in Cr2O3 films that originates from defects and the imbalance of the boundary magnetization of opposing interfaces. This boundary magnetization couples to the antiferromagnetic order parameter enabling selection of its orientation. Nanostructuring the Cr2O3 film with mesa structures revealed reversible edge magnetic states with the direction of magnetic field during field cooling.

Graphene on Chromia: A System for Beyond-Room-Temperature Spintronics.

Evidence of robust spin-dependent transport in monolayer graphene, deposited on the (0001) surface of the antiferromagnetic (AFM)/magneto-electric oxide chromia (Cr2 O3 ), is provided. Measurements performed in the non-local spin-Hall geometry reveal a robust signal that is present at zero external magnetic field and which is significantly larger than any possible ohmic contribution. The spin-related signal persists well beyond the Néel temperature (≈307 K) that defines the transition between the AFM and paramagnetic states, remaining visible at the highest studied temperature of close to 450 K. This robust character is consistent with prior theoretical studies of the graphene/Cr2 O3 system, predicting that the lifting of sub-lattice symmetry in the graphene shall induce an effective spin-orbit term of ≈40 meV. Overall, the results indicate that graphene-on-chromia heterostructures are a highly promising framework for the implementation of spintronic devices, capable of operation well beyond room temperature.

Voltage controlled Néel vector rotation in zero magnetic field.

Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

Tuning graphene transistors through ad hoc electrostatics induced by a nanometer-thick molecular underlayer.

We report on the modulation of the electrical properties of graphene-based transistors that mirror the properties of a few nanometers thick layer made of dipolar molecules sandwiched in between the 2D material and the SiO2 dielectric substrate. The chemical composition of the films of quinonemonoimine zwitterion molecules adsorbed onto SiO2 has been explored by means of X-ray photoemission and mass spectroscopy. Graphene-based devices are then fabricated by transferring the 2D material onto the molecular film, followed by the deposition of top source-drain electrodes. The degree of supramolecular order in disordered films of dipolar molecules was found to be partially improved as a result of the electric field at low temperatures, as revealed by the emergence of hysteresis in the transfer curves of the transistors. The use of molecules from the same family, which are suitably designed to interact with the dielectric surface, results in the disappearance of the hysteresis. DFT calculations confirm that the dressing of the molecules by an external electric field exhibits multiple minimal energy landscapes that explain the thermally stabilized capacitive coupling observed. This study demonstrates that the design and exploitation of ad hoc molecules as an interlayer between a dielectric substrate and graphene represents a powerful tool for tuning the electrical properties of the 2D material. Conversely, graphene can be used as an indicator of the stability of molecular layers, by providing insight into the energetics of ordering of dipolar molecules under the effect of electrical gating.

Multiscale investigation of graphene layers on 6H-SiC(000-1).

In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-µm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM). Finally, STM (at the nm scale) and Raman spectroscopy (at the µm scale) show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.