Significant Oxygen Underestimation When Quantifying Barium-Doped SrTiO Layers by Atom Probe Tomography.

In this paper, the capability for quantifying the composition of Ba-doped SrTiO layers from an atom probe measurement was explored. Rutherford backscattering spectrometry and time-of-flight/energy elastic recoil detection were used to benchmark the composition where the amount of titanium was intentionally varied between samples. The atom probe results showed a significant divergence from the benchmarked composition. The cause was shown to be a significant oxygen underestimation (≳14 at%). The ratio between oxygen and titanium for the samples varied between 2.6 and 12.7, while those measured by atom probe tomography were lower and covered a narrower range between 1.4 and 1.7. This difference was found to be associated with the oxygen and titanium predominantly field evaporating together as a molecular ion. The evaporation fields and bonding chemistries determined showed inconsistencies for explaining the oxygen underestimation and ion species measured. The measured ion charge state was in excellent agreement with that predicted by the Kingham postionization theory. Only by considering the measured ion species, their evaporation fields, the coordination chemistry, the analysis conditions, and some recently reported density functional theory modeling for oxide field emission were we able to postulate a field emission and oxygen neutral desorption process that may explain our results.

Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces.

The increasing scientific and industry interest in 2D MX2 materials within the field of nanotechnology has made the single crystalline integration of large area van der Waals (vdW) layers on commercial substrates an important topic. The c-plane oriented (3D crystal) sapphire surface is believed to be an interesting substrate candidate for this challenging 2D/3D integration. Despite the many attempts that have been made, the yet incomplete understanding of vdW epitaxy still results in synthetic material that shows a crystallinity far too low compared to natural crystals that can be exfoliated onto commercial substrates. Thanks to its atomic control and in situ analysis possibilities, molecular beam epitaxy (MBE) offers a potential solution and an appropriate method to enable a more in-depth understanding of this peculiar 2D/3D hetero-epitaxy. Here, we report on how various sapphire surface reconstructions, that are obtained by thermal annealing of the as-received substrates, influence the vdW epitaxy of the MBE-grown WSe2 monolayers (MLs). The surface chemistry and the interatomic arrangement of the reconstructed sapphire surfaces are shown to control the preferential in-plane epitaxial alignment of the stoichiometric WSe2 crystals. In addition, it is demonstrated that the reconstructions also affect the in-plane lattice parameter and thus the in-plane strain of the 2D vdW-bonded MLs. Hence, the results obtained in this work shine more light on the peculiar concept of vdW epitaxy, especially relevant for 2D materials integration on large-scale 3D crystal commercial substrates.

Enhanced accuracy through machine learning-based simultaneous evaluation: a case study of RBS analysis of multinary materials.

We address the high accuracy and precision demands for analyzing large in situ or in operando spectral data sets. A dual-input artificial neural network (ANN) algorithm enables the compositional and depth-sensitive analysis of multinary materials by simultaneously evaluating spectra collected under multiple experimental conditions. To validate the developed algorithm, a case study was conducted analyzing complex Rutherford backscattering spectrometry (RBS) spectra collected in two scattering geometries. The dual-input ANN analysis excelled in providing a systematic analysis and precise results, showcasing its robustness in handling complex data and minimizing user bias. A comprehensive comparison with human supervision analysis and conventional single-input ANN analysis revealed a reduced susceptibility of the dual-input ANN analysis to inaccurately known setup parameters, a common challenge in material characterization. The developed multi-input approach can be extended to a wide range of analytical techniques, in which the combined analysis of measurements performed under different experimental conditions is beneficial for disentangling details of the material properties.

Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms.

Area selective deposition (ASD) is a promising IC fabrication technique to address misalignment issues arising in a top-down litho-etch patterning approach. ASD can enable resist tone inversion and bottom-up metallization, such as via prefill. It is achieved by promoting selective growth in the growth area (GA) while passivating the non-growth area (NGA). Nevertheless, preventing undesired particles and defect growth on the NGA is still a hurdle. This work shows the selectivity of Ru films by passivating the Si oxide NGA with self-assembled monolayers (SAMs) and small molecule inhibitors (SMIs). Ru films are deposited on the TiN GA using a metal-organic precursor tricarbonyl (trimethylenemethane) ruthenium (Ru TMM(CO)3) and O2 as a co-reactant by atomic layer deposition (ALD). This produces smooth Ru films (<0.1 nm RMS roughness) with a growth per cycle (GPC) of 1.6 Å/cycle. Minimizing the oxygen co-reactant dose is necessary to improve the ASD process selectivity due to the limited stability of the organic molecule and high reactivity of the ALD precursor, still allowing a Ru GPC of 0.95 Å/cycle. This work sheds light on Ru defect generation mechanisms on passivated areas from the detailed analysis of particle growth, coverage, and density as a function of ALD cycles. Finally, an optimized ASD of Ru is demonstrated on TiN/SiO2 3D patterned structures using dimethyl amino trimethyl silane (DMA-TMS) as SMI.

Atomic layer deposition of TiO2 on surface modified nanoporous low-k films.

This paper explores the effects of different plasma treatments on low dielectric constant (low-k) materials and the consequences for the growth behavior of atomic layer deposition (ALD) on these modified substrates. An O2 and a He/H2 plasma treatment were performed on SiCOH low-k films to modify their chemical surface groups. Transmission FTIR and water contact angle (WCA) analysis showed that the O2 plasma changed the hydrophobic surface completely into a hydrophilic surface, while the He/H2 plasma changed it only partially. In a next step, in situ X-ray fluorescence (XRF), ellipsometric porosimetry (EP), and Rutherford backscattering spectroscopy (RBS) were used to characterize ALD growth of TiO2 on these substrates. The initial growth of TiO2 was found to be inhibited in the original low-k film containing only Si-CH3 surface groups, while immediate growth was observed in the hydrophilic O2 plasma treated film. The latter film was uniformly filled with TiO2 after 8 ALD cycles, while pore filling was delayed to 17 ALD cycles in the hydrophobic film. For the He/H2 plasma treated film, containing both Si-OH and Si-CH3 groups, the in situ XRF data showed that TiO2 could no longer be deposited in the He/H2 plasma treated film after 8 ALD cycles, while EP measurements revealed a remaining porosity. This can be explained by the faster deposition of TiO2 in the hydrophilic top part of the film than in the hydrophobic bulk which leaves the bulk porous, as confirmed by RBS depth profiling. The outcome of this research is not only of interest for the development of advanced interconnects in ULSI technology, but also demonstrates that ALD combined with RBS analysis is a handy approach to analyze the modifications induced by a plasma treatment on a nanoporous thin film.

Frequency-dependent stimulated and post-stimulated voltage control of magnetism in transition metal nitrides: towards brain-inspired magneto-ionics.

Magneto-ionics, which deals with the change of magnetic properties through voltage-driven ion migration, is expected to be one of the emerging technologies to develop energy-efficient spintronics. While a precise modulation of magnetism is achieved when voltage is applied, much more uncontrolled is the spontaneous evolution of magneto-ionic systems upon removing the electric stimuli (i.e., post-stimulated behavior). Here, we demonstrate a voltage-controllable N ion accumulation effect at the outer surface of CoN films adjacent to a liquid electrolyte, which allows for the control of magneto-ionic properties both during and after voltage pulse actuation (i.e., stimulated and post-stimulated behavior, respectively). This effect, which takes place when the CoN film thickness is below 50 nm and the voltage pulse frequency is at least 100 Hz, is based on the trade-off between generation (voltage ON) and partial depletion (voltage OFF) of ferromagnetism in CoN by magneto-ionics. This novel effect may open opportunities for new neuromorphic computing functions, such as post-stimulated neural learning under deep sleep.

Plasma-enhanced atomic layer deposition of nickel and cobalt phosphate for lithium ion batteries.

A plasma-enhanced ALD process has been developed to deposit nickel phosphate. The process combines trimethylphosphate (TMP) plasma with oxygen plasma and nickelocene at a substrate temperature of 300 °C. Saturation at a growth per cycle of approximately 0.2 nm per cycle is observed for both the TMP plasma and nickelocene, while a continuous decrease in the growth per cycle is found for the oxygen plasma. From ERD, a stoichiometry of Ni3(P0.8O3.1)2 is measured, but by adding additional oxygen plasma after nickelocene, the composition of Ni3(P0.9O3.7)2 becomes even closer to stoichiometric Ni3(PO4)2. The as-deposited layer resulting from the process without the additional oxygen plasma is amorphous but can be crystallized into Ni2P or crystalline Ni3(PO4)2 by annealing under a hydrogen or helium atmosphere, respectively. The layer deposited with the additional oxygen plasma shows two X-ray diffraction peaks indicating the formation of crystalline Ni3(PO4)2 already during the deposition. The resulting PE-ALD deposited nickel phosphate layers were then electrochemically studied and compared to PE-ALD cobalt and iron phosphate. All phosphates need electrochemical activation at low potential first, after which reversible redox reactions are observed at a potential of approximately 2.5 V vs. Li+/Li. A relatively high capacity and good rate behavior are observed for both nickel and cobalt phosphate, which are thought to originate from either a conversion type reaction or an alloying reaction.

Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry.

We present a site-specific elemental analysis of nano-scale patterns whereby the data acquisition is based on Rutherford backscattering spectrometry (RBS). The analysis builds on probing a large ensemble of identical nanostructures. This ensures that a very good limit of detection can be achieved. In addition, the analysis exploits the energy loss effects of the backscattered ions within the nanostructures to distinguish signals coming from different locations of the nanostructures. The spectrum deconvolution is based on ion-trajectory calculations. With this approach, we analyse the Ru area-selective deposition on SiO2-TiN line-space patterns with a linewidth of 35 nm and a pitch of 90 nm. We quantify the selectivity and the Ru local areal density on the top versus on the sidewall of the SiO2 lines. The sensitivity to probe ruthenium deposited on the various surfaces is as low as 1013 atoms/cm2. The analysis is quantitative, traceable, and highly accurate thanks to the intrinsic capabilities of RBS.

Cyclic Plasma Halogenation of Amorphous Carbon for Defect-Free Area-Selective Atomic Layer Deposition of Titanium Oxide.

As critical dimensions in integrated circuits continue to shrink, the lithography-based alignment of adjacent patterned layers becomes more challenging. Area-selective atomic layer deposition (ALD) allows circumventing the alignment issue by exploiting the chemical contrast of the exposed surfaces. In this work, we investigate the selective deposition of TiO2 by plasma halogenation of amorphous carbon (a-C:H) acting as a growth-inhibiting layer. On a-C:H, a CF4 or Cl2 plasma forms a thin halogenated layer that suppresses the growth of TiO2, while nucleation remains unaffected on plasma-treated SiO2. The same halogenating plasmas preferentially etch TiO2 nuclei over films and thus enable the restoration of the halogenated surface of amorphous carbon. By embedding the intermediate plasma treatments in the ALD TiO2 sequence, an 8 nm TiO2 layer could be deposited with a selectivity of 0.998. The application of the cyclic process on a 60 nm half-pitch line pattern resulted in the defect-free deposition of TiO2 at the bottom of the trenches. Cyclic fluorination demonstrated better growth inhibition compared to chlorination due to more efficient defect removal and retention of the favorable surface composition during plasma exposure. While exploring the TiO2 nucleation defects at the limit of detection for conventional elemental analysis techniques (<1 × 1014 at/cm2), we additionally highlight the value of imaging techniques such as atomic force microscopy for understanding defect formation mechanisms and accurately assessing growth selectivity.

Atomic Layer Deposition of Nitrogen-Doped Al Phosphate Coatings for Li-Ion Battery Applications.

In situ nitrogen doping of aluminum phosphate has been investigated in two different plasma-enhanced atomic layer deposition (PE-ALD) processes. The first method consisted of the combination of trimethyl phosphate plasma (TMP*) with a nitrogen plasma and trimethyl aluminum (TMA), that is, TMP*-N2*-TMA. The second method replaces TMP* with a diethylphosphoramidate plasma (i.e., DEPA*-N2*-TMA) of which the amine group could further aid nitrogen doping and/or eliminate the need for a nitrogen plasma step. At a substrate temperature of 320 °C, the TMP*-based process showed saturated growth (0.8 nm/cycle) of a nitrogen-doped (approximately 8 atom %) Al phosphate, while the process using DEPA* showed a similar amount of nitrogen but a significantly higher growth rate (1.4 nm/cycle). In the latter case, nitrogen doping could also be achieved without the nitrogen plasma, but this leads to a high level of carbon contamination. Both films were amorphous as-deposited, while X-ray diffraction peaks related to AlPO4 appeared after annealing in a He atmosphere. For high coating thickness (>2 nm), a significant increase in the Li-ion transmittance was found after nitrogen doping, although the coating has to be electrochemically activated. At lower thickness scales, such activation was not needed and nitrogen doping was found to double the effective transversal electronic conductivity. For the effective transversal ionic conductivity, no conclusive difference was found. When a lithium nickel manganese cobalt oxide (NMC) powder is coated with one ALD cycle of N-doped Al phosphate, the rate capability and the energy efficiency of the electrode improves.

Electrical Characterization of Ultrathin RF-Sputtered LiPON Layers for Nanoscale Batteries.

Ultrathin lithium phosphorus oxynitride glass (LiPON) films with thicknesses down to 15 nm, deposited by reactive sputtering in nitrogen plasma, were found to be electronically insulating. Such ultrathin electrolyte layers could lead to high power outputs and increased battery energy densities. The effects of stoichiometry, film thickness, and substrate material on the ionic conductivity were investigated. As the amount of nitrogen in the layers increased, the activation energy of the ionic conductivity decreased from 0.63 to 0.53 eV, leading to a maximum conductivity of 1 × 10(-6) S/cm. No dependence of the ionic conductivity on the film thickness or substrate material could be established. A detailed analysis of the equivalent circuit model used to fit the impedance data is provided. Polarization measurements were performed to determine the electronic leakage in these ultrathin films. A 15-nm LiPON layer on a TiN substrate showed electronically insulating properties with electronic resistivity values around 10(15) Ω·cm. To our knowledge, this is the thinnest RF-sputtered LiPON layer shown to be electronically insulating while retaining good ionic conductivity.

Combinatorial Study of Ag-Te Thin Films and Their Application as Cation Supply Layer in CBRAM Cells.

In this work, we investigate binary Ag-Te thin films and their functionality as a cation supply layer in conductive bridge random access memory devices. A combinatorial sputter deposition technique is used to deposit a graded Ag(x)Te(1-x) (0 < x < 1) layer with varying composition as a function of the position on the substrate. The crystallinity, surface morphology, and material stability under thermal treatment as a function of the composition of the material are investigated. From this screening, a narrow composition range between 33 and 38 at% Te is selected which shows a good morphology and a high melting temperature. Functionality of a single Ag(2-δ)Te composition as cation supply layer in CBRAM with dedicated Al2O3 switching layer is then investigated by implementing it in 580 µm diameter dot Pt/Ag(2-δ)Te/Al2O3/Si cells. Switching properties are investigated and compared to cells with a pure Ag cation supply layer. An improved cycling behavior is observed when Te is added compared to pure Ag, which we relate to the ionic conducting properties of Ag2Te and the preferred formation of Ag-Te phases.

Ultrathin NiGe films prepared via catalytic solid-vapor reaction of Ni with GeH(4).

A low-temperature (225-300 °C) solid-vapor reaction process is reported for the synthesis of ultrathin NiGe films (∼6-23 nm) on 300 mm Si wafers covered with thermal oxide. The films were prepared via catalytic chemical vapor reaction of germane (GeH4) gas with physical vapor deposited (PVD) Ni films of different thickness (2-10 nm). The process optimization by investigating GeH4 partial pressure, reaction temperature, and time shows that low resistive, stoichiometric, and phase pure NiGe films can be formed within a broad window. NiGe films crystallized in an orthorhombic structure and were found to exhibit a smooth morphology with homogeneous composition as evidenced by glancing angle X-ray diffraction (GIXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back-scattering (RBS) analysis. Transmission electron microscopy (TEM) analysis shows that the NiGe layers exhibit a good adhesion without voids and a sharp interface on the thermal oxide. The NiGe films were found to be morphologically and structurally stable up to 500 °C and exhibit a resistivity value of 29 µΩ cm for 10 nm NiGe films.