Effect of 150 MeV protons on carbon nanotubes for fabrication of a radiation detector.

High energy and high flux protons are used in proton therapy and the impact of proton radiation is a major reliability concern for electronics and solar cells in low earth orbit as well as in the trapped belts. Carbon nanotubes (CNTs), due to their unique characteristics, have been considered for the construction of proton and other radiation sensors. Here, a single wall CNT based proton sensor was fabricated on FR4 substrate and its response to 150 MeV proton irradiation was studied. The change in the resistance of the nanotubes upon irradiation is exploited as the sensing mechanism and the sensor shows good sensitivity to proton radiation. Proton radiation induces dissociation of ambient oxygen, followed by the adsorption of oxygen species on the nanotube surface, which influences its electrical characteristics. Since the nanotube film is thin and the 150 MeV protons are expected to penetrate into and interact with the substrate, control experiments were conducted to study the impact on FR4 substrate without the nanotubes. The dielectric loss tangent or dissipation factor of FR4 increases after irradiation due to an increase in the cross-linking of the resin arising from the degradation of the polymer network.

Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties.

Thermoelectric modules based on silicon nanowires (Si-NWs) have recently attracted significant attention as they show an improved thermoelectric efficiency due to a decrease in thermal conductivity. Here, we adopt a top-down fabrication method to dramatically reduce the thermal conductivity of vertical Si-NWs. The thermal conductivity of a vertical Si-NW is significantly suppressed with an increasing surface roughness, decreasing diameter, and increasing doping concentration. This large suppression is caused by enhanced phonon scattering, which depends on the phonon wavelength. The boron- and phosphorus-doped rough Si-NWs with a diameter of 200 nm and surface roughness of 6.88 nm show the lowest thermal conductivity of 10.1 and 14.8 W·m-1·K-1, respectively, which are 5.1- and 3.6-fold lower than that of a smooth intrinsic nanowire and 14.8- and 10.1-fold lower than that of bulk silicon. A thermoelectric module was fabricated using this doped rough Si-NW array, and its thermoelectric performance is compared with previously reported Si-NW modules. The fabricated module exhibits an excellent performance with an open circuit voltage of 216.8 mV·cm-2 and a maximum power of 3.74 µW·cm-2 under a temperature difference of 180 K, the highest reported for Si-NW thermoelectric modules.

Electrochemical Activity Assay for Protease Analysis Using Carbon Nanofiber Nanoelectrode Arrays.

There is a strong demand for bioanalytical techniques to rapidly detect protease activities with high sensitivity and high specificity. This study reports an activity-based electrochemical method toward this goal. Nanoelectrode arrays (NEAs) fabricated with embedded vertically aligned carbon nanofibers (VACNFs) are functionalized with specific peptide substrates containing a ferrocene (Fc) tag. The kinetic proteolysis curves are measured with continuously repeated ac voltammetry, from which the catalytic activity is derived as the inverse of the exponential decay time constant based on a heterogeneous Michaelis-Menten model. Comparison of three peptide substrates with different lengths reveals that the hexapeptide H2N-(CH2)4-CO-Pro-Leu-Arg-Phe-Gly-Ala-NH-CH2-Fc is the optimal probe for cathepsin B. The activity strongly depends on temperature and is the highest around the body temperature. With the optimized peptide substrate and measuring conditions, the limit of detection of cathepsin B activity and concentration can reach 2.49 × 10-4 s-1 and 0.32 nM, respectively. The peptide substrates show high specificity to the cognate proteases, with negligible cross-reactions among three cancer-related proteases cathepsin B, ADAM10, and ADAM17. This electrochemical method can be developed into multiplex chips for rapid profiling of protease activities in cancer diagnosis and treatment monitoring.

Nanoscale Vacuum Channel Transistor.

Vacuum tubes that sparked the electronics era had given way to semiconductor transistors. Despite their faster operation and better immunity to noise and radiation compared to the transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum channel transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum channel with a source to gate distance of 10 nm. This transistor performs at a low voltage (<5 V) and provides a high drive current (>3 microamperes). The nanoscale vacuum channel transistor can be a possible alternative to semiconductor transistors beyond Moore's law.

Carbon Nanotube-Based Chemical Sensors.

The need to sense gases and vapors arises in numerous scenarios in industrial, environmental, security and medical applications. Traditionally, this activity has utilized bulky instruments to obtain both qualitative and quantitative information on the constituents of the gas mixture. It is ideal to use sensors for this purpose since they are smaller in size and less expensive; however, their performance in the field must match that of established analytical instruments in order to gain acceptance. In this regard, nanomaterials as sensing media offer advantages in sensitivity, preparation of chip-based sensors and construction of electronic nose for selective detection of analytes of interest. This article provides a review of the use of carbon nanotubes in gas and vapor sensing.

A Sensor Array for the Detection and Discrimination of Methane and Other Environmental Pollutant Gases.

We address the sensitive detection and discrimination of gases impacting the environment, such as CH4, NH3, SO2, and CO, using a sensor array and aided by principal component analysis (PCA). A 32-element chemiresistive sensor array consisting of nine different sensor materials including seven types of modified single-walled carbon nanotubes and two types of polymers has been constructed. PCA results demonstrate excellent discriminating ability of the chemiresistor sensor chip in the 1-30 ppm concentration range. The accuracy of the sensor was verified against data collected using cavity ring down spectroscopy. The sensor chip has also been integrated with a smartphone and has been shown to reproduce the sensing performance obtained with the laboratory measurement system.

Carbon Nanotube Synthesis Using Coal Pyrolysis.

This study investigates carbon nanotube (CNT) production from coal pyrolysis wherein the output gases are used in a chemical vapor deposition reactor. The carbon products are similar to those using commercial coal gas as feedstock, but coal is a relatively cheaper feedstock compared to high purity source gases. A Gibbs minimization model has been developed to predict the volume percentages of product gases from coal pyrolysis. Methane and carbon monoxide were the largest carbon components of the product stream and thus formed the primary source for CNT synthesis. Both the model and the observations showed that increasing the furnace temperature led to a decrease in the absolute quantities of "useful" product gases, with the optimal temperature between 400 and 500 °C. Based on the experimental data, a kinetic rate law for CNT from coal pyrolysis was derived as d[CNT]/dt = K([CO][CH4])(1/2), where K is a function of several equilibrium constants representing various reactions in the CNT formation process.

Activated carbon derived from waste coffee grounds for stable methane storage.

An activated carbon material derived from waste coffee grounds is shown to be an effective and stable medium for methane storage. The sample activated at 900 °C displays a surface area of 1040.3 m(2) g(-1) and a micropore volume of 0.574 cm(3) g(-1) and exhibits a stable CH4 adsorption capacity of ∼4.2 mmol g(-1) at 3.0 MPa and a temperature range of 298 ± 10 K. The same material exhibits an impressive hydrogen storage capacity of 1.75 wt% as well at 77 K and 100 kPa. Here, we also propose a mechanism for the formation of activated carbon from spent coffee grounds. At low temperatures, the material has two distinct types with low and high surface areas; however, activation at elevated temperatures drives off the low surface area carbon, leaving behind the porous high surface area activated carbon.

A growth mechanism for free-standing vertical graphene.

We propose a detailed mechanism for the growth of vertical graphene by plasma-enhanced vapor deposition. Different steps during growth including nucleation, growth, and completion of the free-standing two-dimensional structures are characterized and analyzed by transmission electron microscopy. The nucleation of vertical graphene growth is either from the buffer layer or from the surface of carbon onions. A continuum model based on the surface diffusion and moving boundary (mass flow) is developed to describe the intermediate states of the steps and the edges of graphene. The experimentally observed convergence tendency of the steps near the top edge can be explained by this model. We also observed the closure of the top edges that can possibly stop the growth. This two-dimensional vertical growth follows a self-nucleated, step-flow mode, explained for the first time.

Thermally phase-transformed In2Se3 nanowires for highly sensitive photodetectors.

The photoresponse characteristics of In2Se3 nanowire photodetectors with the κ-phase and α-phase structures are investigated. The as-grown κ-phase In2Se3 nanowires by the vapor-liquid-solid technique are phase-transformed to the α-phase nanowires by thermal annealing. The photoresponse performances of the κ-phase and α-phase In2Se3 nanowire photodetectors are characterized over a wide range of wavelengths (300-900 nm). The phase of the nanowires is analyzed using a high-resolution transmission microscopy equipped with energy dispersive X-ray spectroscopy and X-ray diffraction. The electrical conductivity and photoresponse characteristics are significantly enhanced in the α-phase due to smaller bandgap structure compared to the κ-phase nanowires. The spectral responsivities of the α-phase devices are 200 times larger than those of the κ-phase devices. The superior performance of the thermally phase-transformed In2Se3 nanowire devices offers an avenue to develop highly sensitive photodetector applications.

Optimized operation of silicon nanowire field effect transistor sensors.

Ion-sensitive field effect transistors have been advanced in recent years by utilizing silicon nanowires (Si-NWs), but establishing their optimized operation regime is an area of ongoing research. We propose a modified configuration of SiNWs in the form of a honeycomb structure to obtain high signal to noise ratio and high current stability. The low-frequency noise characteristics and the electrical stress are systematically considered for the optimization and compared against conventional SiNW devices. The operation voltage of the device severely affects the sensing stability; as the gate voltage is increased, the signal-to-noise ratio is enhanced, however, the stress effect becomes severe, and vice versa. The honeycomb nanowire structure shows enhanced noise characteristics in low voltage operation, proving to be an optimum solution for achieving highly stable sensor operation.

Suspended honeycomb nanowire ISFETs for improved stiction-free performance.

This paper reports high performance ion-sensitive field-effect transistors (ISFETs) with a suspended honeycomb nanowire (SHNW) structure. The SHNW can provide a longer, stiction-free channel than that which is possible with a suspended straight nanowire (SSNW) for the realization of gate-all-around biosensors. Devices with SHNWs, SSNWs and conventional nanowires on the substrate have been fabricated using a top-down approach in order to compare their electrical performances. The SHNW devices exhibit excellent electrical characteristics such as lower subthreshold swing, higher transconductance and higher linear drain current. In addition, the SHNW ISFETs show better pH sensitivity than other ISFETs. Based on the results, the SHNW device appears promising for enhancing the intrinsic performance and ensuring the reliable operation of biosensor applications.

Ga-doped indium oxide nanowire phase change random access memory cells.

Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.

Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector.

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (∼2.5 × 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.

Silicon nanowire biologically sensitive field effect transistors: electrical characteristics and applications.

The interest in biologically sensitive field effect transistors (BioFETs) is growing explosively due to their potential as biosensors in biomedical, environmental monitoring and security applications. Recently, adoption of silicon nanowires in BioFETs has enabled enhancement of sensitivity, device miniaturization, decreasing power consumption and emerging applications such as the 3D cell probe. In this review, we describe the device physics and operation of the silicon nanowire BioFETs along with recent advances in the field. The silicon nanowire BioFETs are basically the same as the conventional field-effect transistors (FETs) with the exceptions of nanowire channel instead of thin film and a liquid gate instead of the conventional gate. Therefore, the silicon device physics is important to understand the operation of the BioFETs. Herein, physical characteristics of the silicon nanowire FETs are described and the operational principles of the BioFETs are classified according to the number of gates and the analysis domain of the measured signal. Even the bottom-up process has merits on low-cost fabrication; the top-down process technique is highlighted here due to its reliability and reproducibility. Finally, recent advances in the silicon nanowire BioFETs in the literature are described and key features for commercialization are discussed.

Asymmetric contact-induced selective doping of CVD-grown bilayer WS2 and its application in high-performance photodetection with an ultralow dark current.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are excellent candidates for high-performance optoelectronics due to their high carrier mobility, air stability and strong optical absorption. However, photodetectors made with monolayer TMDs often exhibit a high dark current, and thus, there is a scope for further improvement. Herein, we developed a 2D bilayer tungsten disulfide (WS2) based photodetector (PD) with asymmetric contacts that exhibits an exceptionally low dark current and high specific detectivity. High-quality and large-area monolayer and bilayer WS2 flakes were synthesized using a thermal chemical vapor deposition system. Compared to conventional symmetric contact electrodes, utilizing metal electrodes with higher and lower work functions relative to bilayer WS2 aids in achieving asymmetric lateral doping in the WS2 flakes. This doping asymmetry was confirmed through the photoluminescence spectral profile and Raman mapping analysis. With the asymmetric contacts on bilayer WS2, we find evidence of selective doping of electrons and holes near the Ti and Au contacts, respectively, while the WS2 region away from the contacts remains intrinsic. When compared with the symmetric contact case, the dark current in the WS2 PD with asymmetric (Au, Ti) contact decreases by an order of magnitude under reverse bias with a concomitant increase in the photocurrent, resulting in an improved on/off ratio of ∼105 and overall improved device performance under identical illumination conditions. We explained this improved performance based on the energy band alignment showing a unidirectional charge flow under light illumination. Our results indicate that the planar device structure and compatibility with current nanofabrication technologies can facilitate its integration into advanced chips for futuristic low-power optoelectronic and nanophotonic applications.

Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 µm.

The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.

High green index electromagnetic interference shields with semiconducting Bi2S3 fillers in a PEDOT:PSS matrix.

Conventional metallic electromagnetic interference (EMI) shields, as well as the emerging 2D material-based shields, meet the shielding effectiveness (SE) needs of most applications. However, their shielding performance is dominated by the reflection of incoming radiation due to their high electrical conductivity, which leads to secondary pollution. This problem is getting exacerbated with the proliferation of electronics and communication networks in modern society. Thus, EMI shields that function dominantly by the absorption of incoming radiation are highly desirable. Such shields would be characterized by a green index, which is the ratio of absorbance over reflectance, close to or greater than one. For nonmagnetic materials, the best way to reduce the undesirable large impedance mismatch is to reduce the effective permittivity of the shield material. Here, we present a new EMI shield with a semiconductor Bi2S3 filler in a conducting PEDOT:PSS polymer matrix, instead of the conventional conductive fillers, to reduce the effective permittivity and demonstrate that even a light loading of only 10% Bi2S3 provides high SE of over 40 dB with a green index value of 0.75. Increasing the filler content to 15 wt% increases the green index close to unity while dropping the SE to 30 dB. The shielding mechanism is explained through electromagnetic parameter measurements and supplemented by density functional theory calculations. This work lays the foundation for the advancement of lightweight and ultrathin green EMI shields with minimum secondary pollution.

Role of Diffusion Tensor Imaging in Early Diagnosis and Characterization of Movement Disorders.

BACKGROUND: Symptoms of movement disorders in early stages are similar, which makes definite diagnosis difficult. Hence this study was conducted to explore the role of diffusion tensor imaging (DTI) in enhancing the early diagnosis and characterization of movement disorders. METHODOLOGY: A cross-sectional study was conducted including 60 subjects. All of them were reviewed using conventional magnetic resonance imaging (MRI) and movement disorder DTI protocol. Commercially available software was used to produce fractional anisotropy (FA) maps. Post-processing 3D reconstruction was done to obtain tractograms. Both single and multiple regions of interest (ROIs) were selected for tractography in the pons, midbrain, substantia nigra (SN) and cerebellum. MRI and DTI images were interpreted and correlated with confirmatory diagnosis. RESULTS: According to DTI diagnosis, out of the 30 cases, 28 had movement disorders. Among cases, 36.67% had Parkinson's disease (PD), 23.33% had progressive supranuclear palsy (PSP), 16.67% had essential tremor, 13.33% had multi-system atrophy (MSA) C, and 3.33% had MSA P. DTI correctly classified all cases with PD and PSP. All cases with long disease duration and 88.24% of cases with short disease duration were also correctly classified. A statistically significant difference was observed in the proportion of diagnosis between DTI and conventional MRI. CONCLUSION: DTI has high sensitivity and specificity for the diagnosis of movement disorders. It is capable of early diagnosis of movement disorders and also differentiating and subcategorizing them.