Interfacial Electron-Phonon Coupling Constants Extracted from Intrinsic Replica Bands in Monolayer FeSe/SrTiO_{3}.

The observation of replica bands by angle-resolved photoemission spectroscopy has ignited interest in the study of electron-phonon coupling at low carrier densities, particularly in monolayer FeSe/SrTiO_{3}, where the appearance of replica bands has motivated theoretical work suggesting that the interfacial coupling of electrons in the FeSe layer to optical phonons in the SrTiO_{3} substrate might contribute to the enhanced superconducting pairing temperature. Alternatively, it has also been recently proposed that such replica bands might instead originate from extrinsic final state losses associated with the photoemission process. Here, we perform a quantitative examination of replica bands in monolayer FeSe/SrTiO_{3}, where we are able to conclusively demonstrate that the replica bands are indeed signatures of intrinsic electron-boson coupling, and not associated with final state effects. A detailed analysis of the energy splittings and relative peak intensities between the higher-order replicas, as well as other self-energy effects, allows us to determine that the interfacial electron-phonon coupling in the system corresponds to a value of λ=0.19±0.02, providing valuable insights into the enhancement of superconductivity in monolayer FeSe/SrTiO_{3}. The methodology employed here can also serve as a new and general approach for making more rigorous and quantitative comparisons to theoretical calculations of electron-phonon interactions and coupling constants.

Probing electron-phonon and phonon-phonon coupling in type-II Dirac semi-metal NiTe2via temperature-dependent Raman spectroscopy.

We report the temperature-dependent structural characterization of type-II Dirac semimetal NiTe2in the form of a bulk single crystal and a nanoflake (200 nm thick). Detailed x-ray diffraction study along with Rietveld refinement analysis reveals superior crystallinity and linear thermal expansion coefficient (αT) of 5.56 × 10-6and 22.5 × 10-6K-1along a or b and c lattice directions, respectively. Temperature evolution of Raman spectra shows non-linear variations in the phonon frequency and full-width half maxima of the out-of-plane A1gand in-plane Egmodes. Raman mode E2g1, corresponding to an in-plane vibration, disappears on decreasing the thickness from bulk to nanoflake. Quantitative analysis with anharmonic model yields dominating electron-phonon interaction over phonon-phonon interaction mediated by three- and four-phonon processes.

Crossover from gapped-to-gapless Dirac surface states in magnetic topologicalinsulator MnBi2Te4.

Intrinsic magnetic topological insulators (MTI) host exotic topological phases such as quantized anomalous Hall insulating phase, arising due to the large magnetic exchange gap. However, the interplay of magnetism and topology in these systems in different temperature regimes remains elusive. In this work, we present the logarithmic temperature-dependence of conductivity for sub-100 nm thick exfoliated flakes of MTI MnBi2Te4 in the presence of out-of-plane magnetic fields and extracted the linear slope, κ. We observed a characteristic change, ∆κ ∼ -0.5 in the low-temperature regime, indicating the gapped Dirac surface state according to Lu-Shen theory. We also report the recovery of topological properties in the system via the weak-antilocalization (WAL) effect in the vicinity of antiferromagnetic to paramagnetic transition and in the paramagnetic regime. Hikami-Larkin-Nagaoka (HLN) analysis suggested the presence of topological surface states. Therefore, our study helps in understanding how intrinsic magnetism masks topological properties in an MTI as long as magnetic ordering persists. .