Role of tilt grain boundaries on the structural integrity of WSe2 monolayers.

Transition metal dichalcogenides (TMDCs) are potential materials for future optoelectronic devices. Grain boundaries (GBs) can significantly influence the optoelectronic properties of TMDC materials. Here, we have investigated the mechanical characteristics of tungsten diselenide (WSe2) monolayers and failure process with symmetric tilt GBs using ReaxFF molecular dynamics simulations. In particular, the effects of topological defects, loading rates, and temperatures are investigated. We considered nine different grain boundary structures of monolayer WSe2, of which six are armchair (AC) tilt structures, and the remaining three are zigzag (ZZ) tilt structures. Our results indicate that both tensile strength and fracture strain of WSe2 with symmetric tilt GBs decrease as the temperature increases. We revealed an interfacial phase transition for high-angle GBs reduces the elastic strain energy within the interface at finite temperatures. Furthermore, brittle cracking is the dominant failure mode in the WSe2 monolayer with tilted GBs. WSe2 GB structures showed more strain rate sensitivity at high temperatures than at low temperatures.

Probing the mechanical properties of vertically-stacked ultrathin graphene/Al2O3 heterostructures.

The superior intrinsic mechanical properties of graphene have been widely studied and utilized to enhance the mechanical properties of various composite materials. However, it is still unclear how heterostructures incorporating graphene behave, and to what extent graphene influences their mechanical response. In this work, a series of graphene/Al2O3 composite films were fabricated via atomic layer deposition of Al2O3 on graphene, and their mechanical behavior was studied using an experimental-computational approach. The inclusion of monolayer chemical vapor deposited graphene between ultrathin Al2O3 films (1.5-4.5 nm thickness) was found to enhance the overall stiffness by as much as 70% compared to a pure Al2O3 film of similar thickness (∼150 GPa to ∼250 GPa). Here, for the first time, the combination of graphene and Al2O3 in vertically-stacked heterostructures results in advanced hybrid films of unprecedented mechanical stiffness that also possess qualities desirable for graphene-based transistors and flexible electronics.

Atomic Defects Influenced Mechanics of II-VI Nanocrystals.

Mechanical properties of nanocrystals are influenced by atomic defects. Here, we demonstrate the effect of planar defects on the mechanics of ZnO nanorods using atomic force microscopy, high-resolution transmission electron microscopy, and large-scale atomistic simulation. We study two different conditionally grown single nanorods. One contains extended I1-type stacking fault (SF) and another is defect free. The SF containing nanorods show buckling behaviors with reduced critical loading, whereas the other kinds show linear elastic behavior. We also studied the size dependence of elastic modulus and yield strength. The elastic modulus in both nanorods is inversely proportional to their size. Similar trend is observed for yield strength in the SF containing nanorods; however, the opposite is observed in the SF-free nanorods. This first experimental and theoretical study will guide toward the development of reliable electromechanical devices.

Fast Magnetic Domain-Wall Motion in a Ring-Shaped Nanowire Driven by a Voltage.

Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.

A phase-field approach to nonequilibrium phase transformations in elastic solids via an intermediate phase (melt) allowing for interface stresses.

A phase-field approach for phase transformations (PTs) between three different phases at nonequilibrium temperatures is developed. It includes advanced mechanics, thermodynamically consistent interfacial stresses, and interface interactions. A thermodynamic Landau-Ginzburg potential developed in terms of polar order parameters satisfies the desired instability and equilibrium conditions for homogeneous phases. The interfacial stresses were introduced with some terms from large-strain formulation even though the small-strain assumption was utilized. The developed model is applied to study the PTs between two solid phases via a highly disordered intermediate phase (IP) or an intermediate melt (IM) hundreds of degrees below the melting temperature. In particular, the ß â†” δ PTs in HMX energetic crystals via IM are analyzed. The effects of various parameters (temperature, ratios of widths and energies of solid-solid (SS) to solid-melt (SM) interfaces, elastic energy, and interfacial stresses) on the formation, stability, and structure of the IM within a propagating SS interface are studied. Interfacial and elastic stresses within a SS interphase and their relaxation and redistribution with the appearance of a partial or complete IM are analyzed. The energy and structure of the critical nucleus (CN) of the IM are studied as well. In particular, the interfacial stresses increase the aspect-ratio of the CN. Although including elastic energy can drastically reduce the energy of the CN of the IM, the activation energy of the CN of the IM within the SS interface increases when interfacial tension is taken into account. The developed thermodynamic potential can also be modified to model other multiphase physical phenomena, such as multi-variant martensitic PTs, grain boundary and surface-induced pre-melting and PTs, as well as developing phase diagrams for IPs.

Structural transformation in monolayer materials: a 2D to 1D transformation.

Reducing the dimensions of materials to atomic scales results in a large portion of atoms being at or near the surface, with lower bond order and thus higher energy. At such scales, reduction of the surface energy and surface stresses can be the driving force for the formation of new low-dimensional nanostructures, and may be exhibited through surface relaxation and/or surface reconstruction, which can be utilized for tailoring the properties and phase transformation of nanomaterials without applying any external load. Here we used atomistic simulations and revealed an intrinsic structural transformation in monolayer materials that lowers their dimension from 2D nanosheets to 1D nanostructures to reduce their surface and elastic energies. Experimental evidence of such transformation has also been revealed for one of the predicted nanostructures. Such transformation plays an important role in bi-/multi-layer 2D materials.

The strong influence of internal stresses on the nucleation of a nanosized, deeply undercooled melt at a solid-solid phase interface.

The effect of elastic energy on nucleation and disappearance of a nanometer size intermediate melt (IM) region at a solid-solid (S1S2) phase interface at temperatures 120 K below the melting temperature is studied using a phase-field approach. Results are obtained for broad range of the ratios of S1S2 to solid-melt interface energies, k(E), and widths, k(δ). It is found that internal stresses only slightly promote barrierless IM nucleation but qualitatively alter the system behavior, allowing for the appearance of the IM when k(E) < 2 (thermodynamically impossible without mechanics) and elimination of what we termed the IM-free gap. Remarkably, when mechanics is included within this framework, there is a drastic (16 times for HMX energetic crystals) reduction in the activation energy of IM critical nucleus. After this inclusion, a kinetic nucleation criterion is met, and thermally activated melting occurs under conditions consistent with experiments for HMX, elucidating what had been to date mysterious behavior. Similar effects are expected to occur for other material systems where S1S2 phase transformations via IM take place, including electronic, geological, pharmaceutical, ferroelectric, colloidal, and superhard materials.

Electromechanical properties of 1D ZnO nanostructures: nanopiezotronics building blocks, surface and size-scale effects.

One-dimensional (1D) zinc oxide nanostructures are the main components of nanogenerators and central to the emerging field of nanopiezotronics. Understanding the underlying physics and quantifying the electromechanical properties of these structures, the topic of this research study, play a major role in designing next-generation nanoelectromechanical devices. Here, atomistic simulations are utilized to study surface and size-scale effects on the electromechanical response of 1D ZnO nanostructures. It is shown that the mechanical and piezoelectric properties of these structures are controlled by their size, cross-sectional geometry, and loading configuration. The study reveals enhancement of the piezoelectric and elastic modulus of ZnO nanowires (NW) with diameter d > 1 nm, followed by a sudden drop for d < 1 nm due to transformation of NWs to nanotubes (NTs). Degradation of mechanical and piezoelectric properties of ZnO nanobelts (NBs) followed by an enhancement in piezoelectric properties occurs when their lower dimension is reduced to <1 nm. The latter enhancement can be explained in the context of surface reconfiguration and formation of hexagon-tetragon (HT) pairs at the intersection of (21[combining macron]1[combining macron]0) and (011[combining macron]0) planes in NBs. Transition from a surface-reconstructed dominant to a surface-relaxed dominant region is demonstrated for lateral dimensions <1 nm. New phase-transformation (PT) kinetics from piezoelectric wurtzite to nonpiezoelectric body-centered tetragonal (WZ → BCT) and graphite-like phase (WZ → HX) structures occurs in ZnO NWs loaded up to large strains of ∼10%.

Combined Experimental and Computational Insight into the Role of Substrate in the Synthesis of Two-Dimensional WSe2.

Synthesis of large-area transition-metal dichalcogenides (TMDs) with controlled orientation is a significant challenge to their industrial applications. Substrate plays a vital role in determining the final quality of monolayer materials grown via the chemical vapor deposition process by controlling their orientation, crystal structure, and grain boundary. This study determined the binding energy and equilibrium distance for tungsten diselenide (WSe2) monolayers on crystalline and amorphous silicon dioxide and aluminum dioxide substrates. Differently oriented WSe2 monolayers are considered to investigate the role of the substrate in the orientation, binding strength, and equilibrium distance. This study can pave the way to synthesizing high-quality two-dimensional (2D) materials for electronic and chemical applications.

A Modified Embedded-Atom Method Potential for a Quaternary Fe-Cr-Si-Mo Solid Solution Alloy.

Ferritic-martensitic steels, such as T91, are candidate materials for high-temperature applications, including superheaters, heat exchangers, and advanced nuclear reactors. Considering these alloys' wide applications, an atomistic understanding of the underlying mechanisms responsible for their excellent mechano-chemical properties is crucial. Here, we developed a modified embedded-atom method (MEAM) potential for the Fe-Cr-Si-Mo quaternary alloy system-i.e., four major elements of T91-using a multi-objective optimization approach to fit thermomechanical properties reported using density functional theory (DFT) calculations and experimental measurements. Elastic constants calculated using the proposed potential for binary interactions agreed well with ab initio calculations. Furthermore, the computed thermal expansion and self-diffusion coefficients employing this potential are in good agreement with other studies. This potential will offer insightful atomistic knowledge to design alloys for use in harsh environments.

Highly Sensitive Readout Interface for Real-Time Differential Precision Measurements with Impedance Biosensors.

Field deployment is critical to developing numerous sensitive impedance transducers. Precise, cost-effective, and real-time readout units are being sought to interface these sensitive impedance transducers for various clinical or environmental applications. This paper presents a general readout method with a detailed design procedure for interfacing impedance transducers that generate small fractional changes in the impedance characteristics after detection. The emphasis of the design is obtaining a target response resolution considering the accuracy in real-time. An entire readout unit with amplification/filtering and real-time data acquisition and processing using a single microcontroller is proposed. Most important design parameters, such as the signal-to-noise ratio (SNR), common-mode-to-differential conversion, digitization configuration/speed, and the data processing method are discussed here. The studied process can be used as a general guideline to design custom readout units to interface with various developed transducers in the laboratory and verify the performance for field deployment and commercialization. A single frequency readout unit with a target 8-bit resolution to interface differentially placed transducers (e.g., bridge configuration) is designed and implemented. A single MCU is programmed for real-time data acquisition and sine fitting. The 8-bit resolution is achieved even at low SNR levels of roughly 7 dB by setting the component values and fitting algorithm parameters with the given methods.

A Phase-Field Model for In-Space Manufacturing of Binary Alloys.

The integrity of the final printed components is mostly dictated by the adhesion between the particles and phases that form upon solidification, which is a major problem in printing metallic parts using available In-Space Manufacturing (ISM) technologies based on the Fused Deposition Modeling (FDM) methodology. Understanding the melting/solidification process helps increase particle adherence and allows to produce components with greater mechanical integrity. We developed a phase-field model of solidification for binary alloys. The phase-field approach is unique in capturing the microstructure with computationally tractable costs. The developed phase-field model of solidification of binary alloys satisfies the stability conditions at all temperatures. The suggested model is tuned for Ni-Cu alloy feedstocks. We derived the Ginzburg-Landau equations governing the phase transformation kinetics and solved them analytically for the dilute solution. We calculated the concentration profile as a function of interface velocity for a one-dimensional steady-state diffuse interface neglecting elasticity and obtained the partition coefficient, k, as a function of interface velocity. Numerical simulations for the diluted solution are used to study the interface velocity as a function of undercooling for the classic sharp interface model, partitionless solidification, and thin interface.

Effect of the Substrate on MoS2 Monolayer Morphology: An Integrated Computational and Experimental Study.

Synthesis of two-dimensional materials, specifically transition metal dichalcogenides (TMDs), with controlled lattice orientations is a major barrier to their industrial applications. Controlling the orientation of as-grown TMDs is critical for preventing the formation of grain boundaries, thus reaching their maximum mechanical and optoelectronic performance. Here, we investigated the role of the substrate's crystallinity in the growth orientation of 2D materials using reactive molecular dynamics (MD) simulations and verified with experimental growth using the chemical vapor deposition (CVD) technique. We considered MoS2 as our model material and investigated its growth on crystalline and amorphous silica and sapphire substrates. We revealed the role of the substrate's energy landscape on the orientation of as-grown TMDs, where the presence of monolayer-substrate energy barriers perpendicular to the streamlines hinder the detachment of precursor nuclei from the substrate. We show that MoS2 monolayers with controlled orientations could not be grown on the SiO2 substrate and revealed that amorphization of the substrate changes the intensity and equilibrium distance of monolayer-substrate interactions. Our simulations indicate that 0° rotated MoS2 is the most favorable configuration on a sapphire substrate, consistent with our experimental results. The experimentally validated computational results and insight presented in this study pave the way for the high-quality synthesis of TMDs for high-performance electronic and optoelectronic devices.

Developing Fused Deposition Modeling Additive Manufacturing Processing Strategies for Aluminum Alloy 7075: Sample Preparation and Metallographic Characterization.

Currently, no commercial aluminum 7000 series filaments are available for making aluminum parts using fused deposition modeling (FDM)-based additive manufacturing (AM). The key technical challenge associated with the FDM of aluminum alloy parts is consolidating the loosely packed alloy powders in the brown-body, separated by thin layers of surface oxides and polymer binders, into a dense structure. Classical pressing and sintering-based powder metallurgy (P/M) technologies are employed in this study to assist the development of FDM processing strategies for making strong Al7075 AM parts. Relevant FDM processing strategies, including green-body/brown-body formation and the sintering processes, are examined. The microstructures of the P/M-prepared, FDM-like Al7075 specimens are analyzed and compared with commercially available FDM 17-4 steel specimens. We explored the polymer removal and sintering strategies to minimize the pores of FDM-Al7075-sintered parts. Furthermore, the mechanisms that govern the sintering process are discussed.

Defect Engineering: A Path toward Exceeding Perfection.

Moving to nanoscale is a path to get perfect materials with superior properties. Yet defects, such as stacking faults (SFs), are still forming during the synthesis of nanomaterials and, according to common notion, degrade the properties. Here, we demonstrate the possibility of engineering defects to, surprisingly, achieve mechanical properties beyond those of the corresponding perfect structures. We show that introducing SFs with high density increases the Young's Modulus and the critical stress under compressive loading of the nanowires above those of a perfect structure. The physics can be explained by the increase in intrinsic strain due to the presence of SFs and overlapping of the corresponding strain fields. We have used the molecular dynamics technique and considered ZnO as our model material due to its technological importance for a wide range of electromechanical applications. The results are consistent with recent experiments and propose a novel approach for the fabrication of stronger materials.

Fast 180° magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage.

Voltage-driven 180° magnetization switching provides a low-power alternative to current-driven magnetization switching widely used in spintronic devices. Here we computationally demonstrate a promising route to achieve voltage-driven in-plane 180° magnetization switching in a strain-mediated multiferroic heterostructure (e.g., a heterostructure consisting of an amorphous, slightly elliptical Co40Fe40B20 nanomagnet on top of a Pb(Zr,Ti)O3 film as an example). This 180° switching follows a unique precessional path all in the film plane, and is enabled by manipulating magnetization dynamics with fast, local piezostrains (rise/release time <0.1 ns) on the Pb(Zr,Ti)O3 film surface. Our analyses predict ultralow area energy consumption per switching (~0.03 J/m(2)), approximately three orders of magnitude smaller than that dissipated by current-driven magnetization switching. A fast overall switching time of about 2.3 ns is also demonstrated. Further reduction of energy consumption and switching time can be achieved by optimizing the structure and material selection. The present design provides an additional viable route to realizing low-power and high-speed spintronics.