Multiscale landscaping of droplet wettability on fibrous layers of facial masks.

Liquid mobility is ubiquitous in nature, with droplets emerging at all size scales, and artificial surfaces have been designed to mimic such mobility over the past few decades. Meanwhile, millimeter-sized droplets are frequently used for wettability characterization, even with facial mask applications, although these applications have a droplet-size target range that spans from millimeters to aerosols measuring less than a few micrometers. Unlike large droplets, microdroplets can interact sensitively with the fibers they contact with and are prone to evaporation. However, wetting behaviors at the single-microfiber level remain poorly understood. Herein, we characterized the wettability of fibrous layers, which revealed that a multiscale landscape of droplets ranged from the millimeter to the micrometer scale. The contact angle (CA) values of small droplets on pristine fibrous media showed sudden decrements, especially on a single microfiber, owing to the lack of air cushions for the tiny droplets. Moreover, droplets easily adhered to the pristine layer during droplet impact tests and then yielding widespread areas of contamination on the microfibers. To resolve this, we carved nanowalls on the pristine fibers by plasma etching, which effectively suppressed such wetting phenomena. Significantly, the resulting topographies of the microfibers managed the dynamic wettability of droplets at the multiscale, which reduced the probability of contamination with impact droplets and suppressed the wetting transition upon evaporation. These findings for the dynamic wettability of fibrous media will be useful in the fight against infectious droplets.

Layer-Controlled Perovskite 2D Nanosheet Interlayer for the Energy Storage Performance of Nanocomposites.

Polymer-based nanocomposites are desirable materials for next-generation dielectric capacitors. 2D dielectric nanosheets have received significant attention as a filler. However, randomly spreading the 2D filler causes residual stresses and agglomerated defect sites in the polymer matrix, which leads to the growth of an electric tree, resulting in a more premature breakdown than expected. Therefore, realizing a well-aligned 2D nanosheet layer with a small amount is a key challenge; it can inhibit the growth of conduction paths without degrading the performance of the material. Here, an ultrathin Sr1.8 Bi0.2 Nb3 O10 (SBNO) nanosheet filler is added as a layer into poly(vinylidene fluoride) (PVDF) films via the Langmuir-Blodgett method. The structural properties, breakdown strength, and energy storage capacity of a PVDF and multilayer PVDF/SBNO/PVDF composites as a function of the thickness-controlled SBNO layer are examined. The seven-layered (only 14 nm) SBNO nanosheets thin film can sufficiently prevent the electrical path in the PVDF/SBNO/PVDF composite and shows a high energy density of 12.8 J cm-3 at 508 MV m-1 , which is significantly higher than that of the bare PVDF film (9.2 J cm-3 at 439 MV m-1 ). At present, this composite has the highest energy density among the polymer-based nanocomposites under the filler of thin thickness.

Heterointerface Effect on Two-Step Nucleation Mechanism of Bi Particles.

The nucleation and crystallization of Bi particles on two matrices, crystalline bismuth sulfide (c-Bi2S3) and amorphized bismuth titanium oxide (a-Bi12TiO20), were studied by using in situ transmission electron microscopy (TEM) analysis. The atomic structures of the Bi particles were monitored by acquiring high-resolution TEM images in real time. The Bi particles were grown on c-Bi2S3 and a-Bi12TiO20 via a two-step nucleation mechanism; dense liquid clusters were clearly observed at the initial stage of nucleation, and the coalescence of clusters was frequently observed during the growth. However, the nucleation and crystallization behaviors of Bi particles were governed by the matrix; in particular, the evolution of their morphology and atomic structure was confined on c-Bi2S3 but free from matrix effects on a-Bi12TiO20. The matrix effect on the two-step nucleation mechanism was demonstrated from a thermodynamic point of view.

Enhanced electrochemical performance of a ZnO-MnO composite as an anode material for lithium ion batteries.

A ZnO-MnO composite was synthesized using a simple solvothermal method combined with a high-temperature treatment. To observe the phase change during the heating process, in situ high-temperature XRD analysis was performed under vacuum conditions. The results indicated that ZnMn2O4 transformed into the ZnO-MnO composite phase starting from 500 °C and that this composite structure was retained until 700 °C. The electrochemical performances of the ZnO-MnO composite electrode were evaluated through galvanostatic discharge-charge tests and cyclic voltammetry analysis. Its initial coulombic efficiency was significantly improved to 68.3% compared to that of ZnMn2O4 at 54.7%. Furthermore, the ZnO-MnO composite exhibited improved cycling performance and enhanced rate capability compared with untreated ZnMn2O4. To clarify the discharge-charge mechanism of the ZnO-MnO composite electrode, the structural changes during the charge and discharge processes were also investigated using ex situ XRD and TEM.

Recent Developments in (K, Na)NbO3-Based Lead-Free Piezoceramics.

(K0.5Na0.5)NbO3 (KNN)-based ceramics have been extensively investigated as replacements for Pb(Zr, Ti)O3-based ceramics. KNN-based ceramics exhibit an orthorhombic structure at room temperature and a rhombohedral-orthorhombic (R-O) phase transition temperature (TR-O), orthorhombic-tetragonal (O-T) phase transition temperature (TO-T), and Curie temperature of -110, 190, and 420 °C, respectively. Forming KNN-based ceramics with a multistructure that can assist in domain rotation is one technique for enhancing their piezoelectric properties. This review investigates and introduces KNN-based ceramics with various multistructures. A reactive-templated grain growth method that aligns the grains of piezoceramics in a specific orientation is another approach for improving the piezoelectric properties of KNN-modified ceramics. The piezoelectric properties of the [001]-textured KNN-based ceramics are improved because their microstructures are similar to those of the [001]-oriented single crystals. The improvement in the piezoelectric properties after [001] texturing is largely influenced by the crystal structure of the textured ceramics. In this review, [001]-textured KNN-based ceramics with different crystal structures are investigated and systematically summarized.

Electrochemical properties of Sn-substituted LiMn2O4 thin films prepared by radio-frequency magnetron sputtering.

The LiMn2O4 and LiSn0.0125Mn1975O4 thin films were grown on Pt/Ti/SiO2/Si (100) substrate by RF magnetron sputtering. To obtain the structural stability and good cycle performance, deposition parameters, namely working pressure, sputtering gas ratio of Ar and O2, post-annealing temperature were established. The structure and surface morphology of thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The electrochemical properties were estimated by two electrode half-cell test with WBCS 3000 (Wonatech, Korea) at constant current rate of 1 C-rate. The Sn substituted LiMn2O4 thin film deposited at 10 mtorr with mixture of argon and oxygen (Ar/O2 = 3/1) and then annealed at 500 degrees C in O2 atmosphere showed good cycle performance. The Sn substituted LiMn2O4 thin films showed larger capacity of -30 microAh/microm-cm2 and higher cyclability than LiMn2O4 thin films.

Correlating multimode strain and electrode configurations for high-performance gradient-index phononic crystal-based piezoelectric energy harvesting.

A gradient-index phononic crystal (GRIN PnC) capable of manipulating wave propagation can serve as an excellent input wave energy focusing platform for amplifying energy harvesting power generation. However, despite its remarkable focusing capability, the finite wavelength of the propagating elastic waves in the focal area causes voltage cancellation inside a piezoelectric element under multimode strains having opposite directions; this limits the capacity of the GRIN PnC-based energy harvesting system. This study demonstrates a rational electrode configuration for a piezoelectric energy harvesting (PEH) device that can maximize the performance of a given GRIN PnC platform. The multimode strain analysis experimentally performed on the PEHs distributed over the focusing area confirms that the patterned electrode PEH configuration is the most effective in alleviating strain and voltage cancellation while efficiently transferring the focused elastic wave energy. Furthermore, a proper combination of electrical connections between the patterned electrodes substantially increases the piezoelectric potential across the ceramic by maximizing the strain difference. The simultaneous tailoring of the piezoelectric ceramic composition and the electrode configuration leads to a maximum power generation of 7.06 mW even under off-resonance conditions, the largest ever reported in elastic wave energy harvesting.

Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes.

Active cation-based diffusive memristors featuring essentially volatile threshold switching have been proposed for novel applications, such as a selector in a one-selector-and-one-resistor structure and signal generators in neuromorphic computing. However, the high variability of the switching behavior, which results from the high electroforming voltage, external environmental conditions, and transition to the non-volatile switching mode in a high-current range, is considered a major impediment to such applications. Herein, for the first time, we developed a highly reliable threshold switching device immune to atmospheric changes based on an ultraviolet-ozone (UVO)-treated diffusive memristor consisting of Ag and SiO2 nanorods (NRs). UVO treatment forms a stable water reservoir on the surface of SiO2 NRs, facilitating the redox reaction and ion migration of Ag. Consequently, diffusive memristors possess reliable switching characteristics, including electroforming-free, repeatable, and consistent switching with resistance to changes in ambient conditions and compliance levels during operation. We demonstrated that our approach is suitable for various metal oxides and can be used in numerous applications.

Direct Printing of Ultrathin Block Copolymer Film with Nano-in-Micro Pattern Structures.

Nanotransfer printing (nTP) is one of the most promising nanopatterning methods given that it can be used to produce nano-to-micro patterns effectively with functionalities for electronic device applications. However, the nTP process is hindered by several critical obstacles, such as sub-20 nm mold technology, reliable large-area replication, and uniform transfer-printing of functional materials. Here, for the first time, a dual nanopatterning process is demonstrated that creates periodic sub-20 nm structures on the eight-inch wafer by the transfer-printing of patterned ultra-thin (<50 nm) block copolymer (BCP) film onto desired substrates. This study shows how to transfer self-assembled BCP patterns from the Si mold onto rigid and/or flexible substrates through a nanopatterning method of thermally assisted nTP (T-nTP) and directed self-assembly (DSA) of Si-containing BCPs. In particular, the successful microscale patternization of well-ordered sub-20 nm SiOx patterns is systematically presented by controlling the self-assembly conditions of BCP and printing temperature. In addition, various complex pattern geometries of nano-in-micro structures are displayed over a large patterning area by T-nTP, such as angular line, wave line, ring, dot-in-hole, and dot-in-honeycomb structures. This advanced BCP-replicated nanopatterning technology is expected to be widely applicable to nanofabrication of nano-to-micro electronic devices with complex circuits.

Autonomous Resonance-Tuning Mechanism for Environmental Adaptive Energy Harvesting.

An innovative autonomous resonance-tuning (ART) energy harvester is reported that utilizes adaptive clamping systems driven by intrinsic mechanical mechanisms without outsourcing additional energy. The adaptive clamping system modulates the natural frequency of the harvester's main beam (MB) by adjusting the clamping position of the MB. The pulling force induced by the resonance vibration of the tuning beam (TB) provides the driving force for operating the adaptive clamp. The ART mechanism is possible by matching the natural frequencies of the TB and clamped MB. Detailed evaluations are conducted on the optimization of the adaptive clamp tolerance and TB design to increase the pulling force. The energy harvester exhibits an ultrawide resonance bandwidth of over 30 Hz in the commonly accessible low vibration frequency range (<100 Hz) owing to the ART function. The practical feasibility is demonstrated by evaluating the ART performance under both frequency and acceleration-variant conditions and powering a location tracking sensor.

Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis.

We demonstrate that resistance random access memory (RRAM) can be fabricated based on CdS-nanocrystal thin films. A simple drop-drying of the CdS-nanocrystal solution leads to the formation of uniform thin films with controlled thickness. RRAMs with a Ag/Al(2) O(3) /CdS/Pt structure show bipolar switching behavior, with average values of the set voltage (V(Set) ) and reset voltage (V(Reset) ) of 0.15 V and -0.19 V, respectively. The RRAM characteristics are critically influenced by the thickness of the Al(2) O(3) barrier layer, which prevents significant migration of Ag into the CdS layer as revealed by Auger electron spectroscopy (AES). Interestingly, RRAM without an Al(2) O(3) layer (i.e., Ag/CdS/Pt structure) also shows bipolar switching behavior, but the polarity is opposite to that of RRAM with the Al(2) O(3) layer (i.e., Ag/Al(2) O(3) /CdS/Pt structure). The operation of both kinds of devices can be explained by the conventional conductive bridging mechanism. Additionally, we fabricated RRAM devices on Kapton film for potential applications in flexible electronics, and the performance of this RRAM device was comparable to that of RRAMs fabricated on hard silicon substrates. Our results show a new possibility of using chalcogenide nanocrystals for RRAM applications.

Synthesis of lead-free (K, Na)(Nb, Ta)O3 nanopowders using a sol-gel process.

Lead-free (K0.5Na0.5)(Nb0.7Ta0.3)O3 piezoelectric material was successfully synthesized via a sol-gel process. Crystalline (K0.5Na0.5)(Nb0.7Ta0.3)O3 nanopowders were obtained after heat treatment at 700 degrees C. The particle size was estimated to be 87nm +/- 23 nm. The transmission electron microscopy images showed that individual nanoparticles were single crystalline and had a pseudo-cubic structure with a lattice parameter of -3.96 angstroms. Both X-ray diffraction and scanning electron microscopy studies consistently showed that the crystallization of the (K0.5Na0.5)(Nb0.7Ta0.3)O3 occurred slightly above 500 degrees C. The samples have an appropriate stoichiometry as found via energy dispersive X-ray spectroscopy. The demonstration of the synthesis of (K0.5Na0.5)(Nb0.7Ta0.3)O3 via a sol-gel process as presented in this paper can provide an important foundation for the development of a synthetic route towards (K0.5Na0.5)(Nb0.7Ta0.3)O3 doped with various other elements for high performance piezoelectric devices.

Low-voltage-driven pentacene thin-film transistors with cross-linked poly(4-vinylphenol)/high-k Bi55b3O15 hybrid dielectric for phototransistor.

This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi5Nb3O15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (- -5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm2/V x s, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V(G) = 0 V under 100 mW/cm2 AM 1.5 illumination.

Optical study of Mn-doped Bi4Ti3O,12 thin films by spectroscopic ellipsometry.

Mn-doped Bi4Ti3O12(B4T3) thin films grown at 400 degrees C on a Pt/Ti/SiO2/Si substrate through pulsed laser deposition (PLD) were analyzed via spectroscopic ellipsometry (SE). The PLD targets were produced through the conventional solid-state sintering method, and the film samples were annealed at 600 degrees C. The SE spectra of B4T3 films were measured using a rotating analyzer type ellipsometer within the 1.12 to 6.52 eV energy range, with the various incidence angles. The optical properties of the B4T3 films with increasing Mn-mol concentration were extracted using a multilayer model for the whole structure and the Tauc-Lorentz (TL) dispersion relation for the B4T3 film layer. The analysis results clearly showed that the significant changes in optical properties of B4T3 films are caused by thermal annealing procedure and the Mn-mol concentrations. X-ray diffraction (XRD) measurement was also performed to confirm the results of SE analysis.

Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr0.7Ca0.3MnO3 Memristor.

An amorphous Pr0.7Ca0.3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN-Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typical bipolar switching characteristics, which were attributed to the generation and disruption of oxygen vacancy (OV) filaments. Fabrication of the PCMO memristor at a high OP resulted in nonlinear conduction modulation with the application of equivalent pulses. However, the memristor fabricated at a low OP of 100 mTorr exhibited linear conduction modulation. The linearity of this memristor improved because the growth and disruption of the OV filaments were mostly determined by the redox reaction of OV owing to the presence of numerous OVs in this PCMO film. Furthermore, simulation using a convolutional neural network revealed that this PCMO memristor has enhanced classification performance owing to its linear conduction modulation. This memristor also exhibited several biological synaptic characteristics, indicating that an amorphous PCMO thin film fabricated at a low OP would be a suitable candidate for artificial synapses.

Optimization of Hybrid Ink Formulation and IPL Sintering Process for Ink-Jet 3D Printing.

Ink-jet 3D printing technology facilitates the use of various materials of ink on each ink-jet head and simultaneous printing of multiple materials. It is suitable for manufacturing to process a complex multifunctional structure such as sensors and printed circuit boards. In this study, a complex structure of a SiO2 insulation layer and a conductive Cu layer was fabricated with photo-curable nano SiO2 ink and Intense Pulsed Light (IPL)-sinterable Cu nano ink using multi-material ink-jet 3D printing technology. A precise photo-cured SiO2 insulation layer was designed by optimizing the operating conditions and the ink rheological properties, and the resistance of the insulation layer was 2.43 × 1013 Ω·cm. On the photo-cured SiO2 insulation layer, a Cu conductive layer was printed by controlling droplet distance. The sintering of the IPL-sinterable nano Cu ink was performed using an IPL sintering process, and electrical and mechanical properties were confirmed according to the annealing temperature and applied voltage. Then, Cu conductive layer was annealed at 100 °C to remove the solvent, and IPL sintered at 700 V. The Cu conductive layer of the complex structure had an electrical property of 29 µΩ·cm and an adhesive property with SiO2 insulation layer of 5B.

Subwavelength Hollow-Nanopillared Glass with Gradient Refractive Index for Ultralow Diffuse Reflectance and Antifogging.

Nanostructured glass with subwavelength hollow nanopillars of diameters of sub-65 nm was fabricated, showing high optical transmittance and ultralow diffuse reflectance. A simple process involving single-step plasma etching was used on a glass slide coated with a SiO2 sacrificial film. First, SiO2 nanodot structures were formed using plasma-induced anisotropic etching with CF4 plasma. The SiO2 nanodot array then became a secondary etching mask to form hollow nanopillars on the glass. The hollow structures formed at the upper part reaching up to the apex of the nanopillar had a lower solid fraction, while the lower part had a higher fraction. The refractive index (RI) gradually increased from 1.09 (near the value for air) to 1.42 (near the value for glass). Geometry-induced RI gradient enhanced light transmi, while it significantly reduced diffuse reflectance, particularly in the shorter wavelengths, thus suppressing the haziness or milky appearance of the nanostructured glass. Superhydrophilic and antifogging properties of nanostructured glasses and dental mirrored glasses were also demonstrated with water spraying and exhaled breath tests. Results showed that the wettability was enhanced in hydrophilicity and antifogging property by both the hydrophilic nature of the glass and the newly formed nanostructures. The nanostructured, superhydrophilic glass was also found to have easy cleaning nature against fine sand dust adhesion by simply blowing air or spraying water. Results of this study showed that such a hollow-pillared glass surface with gradient RI and special wettability could be applied in a variety of optical and optoelectronic applications requiring superwetting, such as optical windows for solar cell panels, display panels, light-emitting diodes, and medical devices even with curved surfaces.

Piezoelectric Energy Harvesting Design Principles for Materials and Structures: Material Figure-of-Merit and Self-Resonance Tuning.

Piezoelectric energy harvesters (PEHs) aim to generate sufficient power to operate targeting device from the limited ambient energy. PEH includes mechanical-to-mechanical, mechanical-to-electrical, and electrical-to-electrical energy conversions, which are related to PEH structures, materials, and circuits, respectively; these should be efficient for increasing the total power. This critical review focuses on PEH structures and materials associated with the two major energy conversions to improve PEH performance. First, the resonance tuning mechanisms for PEH structures maintaining continuous resonance, regardless of a change in the vibration frequency, are presented. Based on the manual tuning technique, the electrically- and mechanically-driven self-resonance tuning (SRT) techniques are introduced in detail. The representative SRT harvesters are summarized in terms of tunability, power consumption, and net power. Second, the figure-of-merits of the piezoelectric materials for output power are summarized based on the operating conditions, and optimal piezoelectric materials are suggested. Piezoelectric materials with large kij , dij , and gij values are suitable for most PEHs, whereas those with large kij and Qm values should be used for on-resonance conditions, wherein the mechanical energy is directly supplied to the piezoelectric material. This comprehensive review provides insights for designing efficient structures and selection of proper piezoelectric materials for PEHs.

Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies.

The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.

Single-step plasma-induced hierarchical structures for tunable water adhesion.

Smart surfaces in nature have been extensively studied to identify their hierarchical structures in micro-/nanoscale to elucidate their superhydrophobicity with varying water adhesion. However, mimicking hybrid features in multiscale requires complex, multi-step processes. Here, we proposed a one-step process for the fabrication of hierarchical structures composed in micro-/nanoscales for superhydrophobic surfaces with tunable water adhesion. Hierarchical patterns were fabricated using a plasma-based selective etching process assisted by a dual scale etching mask. As the metallic mesh is placed above the substrate, it serves the role of dual scale etching masks on the substrate: microscale masks to form the micro-wall network and nanoscale masks to form high-aspect-ratio nanostructures. The micro-walls and nanostructures can be selectively hybridized by adjusting the gap distance between the mesh and the target surface: single nanostructures on a large area for a larger gap distance and hybrid/hierarchical structures with nanostructures nested on micro-walls for a shorter gap distance. The hierarchically nanostructured surface shows superhydrophobicity with low water adhesion, while the hybrid structured surface becomes become superhydrophobic with high adhesion. These water adhesion tunable surfaces were explored for water transport and evaporation. Additionally, we demonstrated a robust superhydrophobic surface with anti-reflectance over a large area.