RESUMO
The synthesis of germanium nanocrystals (GeNCs) with well-defined surface chemistry is of considerable interest because of their potential applications in the optoelectronic, battery, and semiconductor industries. Modifying and tailoring GeNC surface chemistry provides an avenue by which reactivity, environmental compatibility (e.g., solubility, resistance to oxidation), and electronic properties may be tailored. Hydride-terminated GeNCs (H-GeNCs) are of particular interest because the reactivity of surface Ge-H bonds toward alkenes and alkynes via hydrogermylation affords the potential for convenient modification; however, these reactions and their scope have not been widely explored. This report describes a straightforward route for preparing a GeNC/GeO2 composite via disproportionation of heretofore-unexplored Ge(II) oxide-based precursor from which the H-GeNCs were freed by subsequently chemical etching. The H-GeNCs were derivatized using a series of hydrogermylation approaches (i.e., thermally activated, radical-initiated, and borane-catalyzed). The presented findings indicate surface functionalization occurs under all conditions investigated; however the nature of surface species (i.e., monolayers vs multilayers) and surface coverage varies depending upon the conditions employed.