Formation and microstructural properties of locally distributed ZnSiO3 nanoparticles embedded in a SiO2 layer by using a focused electron beam.

Locally distributed crystalline ZnSiO3 nanoparticles embedded in a SiO2 layer inserted between the ZnO thin film and the Si substrate were formed using transmission electron microscopy (TEM) with a focused electron beam irradiation process. High-resolution TEM (HRTEM) images and energy dispersive X-ray spectroscopy (EDS) profiles showed that ZnSiO3 nanocrystals with a size of approximately 6 nm were formed in the SiO2 layer. The formation mechanisms of the ZnSiO3 nanocrystals in the SiO2 layer are described on the basis of the HRTEM images and the EDS profiles.

The formation mechanism of periodic Zn nanocrystal arrays embedded in an amorphous layer by rapid electron beam irradiation.

A periodic nano-island array of ∼7 nm diameter Zn single crystals embedded in an amorphous Zn(2x)Si(1-x)O(2) layer was created by using rapid electron beam irradiation for 50 s. A sequential process of 900 °C thermal annealing followed by electron beam irradiation induces the formation of an amorphous Zn(2x)Si(1-x)O(2) layer containing periodic Zn nanocrystals. It is shown that the periodic Zn crystal array can be produced with good control of their size and spacing. Possible formation mechanisms for the Zn crystal nano-islands are described on the basis of the experimental results.