Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements.

The atomic and electronic dynamics in the topological insulator (TI) Bi2Te3 under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi2Te3 trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

Measuring quantum coherence in bulk solids using dual phase-locked optical pulses.

Electronic and phonon coherence are usually measured in different ways because their time-scales are very different. In this paper we simultaneously measure the electronic and phonon coherence using the interference of the electron-phonon correlated states induced by two phase-locked optical pulses. Interferometric visibility showed that electronic coherence remained in a semiconducting GaAs crystal until ~40 fs; in contrast, electronic coherence disappeared within 10 fs in a semimetallic Bi crystal at room temperature, differing substantially from the long damping time of its phonon coherence, in the picosecond range.