High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes.

Thermal management is critical in contemporary electronic systems, and integrating diamond with semiconductors offers the most promising solution to improve heat dissipation. However, developing a technique that can fully exploit the high thermal conductivity of diamond, withstand high-temperature annealing processes, and enable mass production is a significant challenge. In this study, the successful transfer of AlGaN/GaN/3C-SiC layers grown on Si to a large-size diamond substrate is demonstrated, followed by the fabrication of GaN high electron mobility transistors (HEMTs) on the diamond. Notably, no exfoliation of 3C-SiC/diamond bonding interfaces is observed even after annealing at 1100 °C, which is essential for high-quality GaN crystal growth on the diamond. The thermal boundary conductance of the 3C-SiC-diamond interface reaches ≈55 MW m-2 K-1, which is efficient for device cooling. GaN HEMTs fabricated on the diamond substrate exhibit the highest maximum drain current and the lowest surface temperature compared to those on Si and SiC substrates. Furthermore, the device thermal resistance of GaN HEMTs on the diamond substrate is significantly reduced compared to those on SiC substrates. These results indicate that the GaN/3C-SiC on diamond technique has the potential to revolutionize the development of power and radio-frequency electronics with improved thermal management capabilities.

Multicrystalline informatics: a methodology to advance materials science by unraveling complex phenomena.

Multicrystalline materials play a crucial role in our society. However, their microstructure is complicated, and there is no universal approach to achieving high performance. Therefore, a methodology is necessary to answer the fundamental question of how we should design and create microstructures. 'Multicrystalline informatics' is an innovative approach that combines experimental, theoretical, computational, and data sciences. This approach helps us understand complex phenomena in multicrystalline materials and improve their performance. The paper covers various original research bases of multicrystalline informatics, such as the three-dimensional visualization of crystal defects in multicrystalline materials, the machine learning model for predicting crystal orientation distribution, network analysis of multicrystalline structures, computational methods using artificial neural network interatomic potentials, and so on. The integration of these research bases proves to be useful in understanding unexplained phenomena in complex multicrystalline materials. The paper also presents examples of efficient optimization of the growth process of high-quality materials with the aid of informatics, as well as prospects for extending the methodology to other materials.

We introduce our attempt to explore a methodology for high-performance multicrystalline materials development, multicrystalline informatics, using silicon as a model material.

Fabrication of Carbon Nanotube Thin Films for Flexible Transistors by Using a Cross-Linked Amine Polymer.

Owing to their remarkable properties, single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) are expected to be used in various flexible electronics applications. To fabricate SWCNT channel layers for TFTs, solution-based film formation on a self-assembled monolayer (SAM) covered with amino groups is commonly used. However, this method uses highly oxidized surfaces, which is not suitable for flexible polymeric substrates. In this work, a solution-based SWCNT film fabrication using methoxycarbonyl polyallylamine (Moc-PAA) is reported. The NH2 -terminated surface of the cross-linked Moc-PAA layer enables the formation of highly dense and uniform SWCNT networks on both rigid and flexible substrates. TFTs that use the fabricated SWCNT thin film exhibited excellent performance with small variations. The presented simple method to access SWCNT thin film accelerates the realization of flexible nanoelectronics.

Dependence of enhancement factor on electrode size for field emission current from carbon nanotube on silicon wafer.

This work studies the enhancement factor associated with a current emitted from a multi-wall carbon nanotube to an extremely small counter electrode. The experimental data show that the field enhancement factor increases by 1.15 times when the width of the counter electrode increases from 50 to 200 nm. To better understand this enhancement effect, field intensities at the emitter surface are numerically simulated. The experimental work and simulations demonstrate that the observed field enhancement results from increases in the capacitance between the emitter and counter electrode. In addition, corrugated counter electrodes are found to greatly affect both the capacitance and enhancement factor. This is because the corrugation of the anode surface raises the capacitance and thus provides a higher current. We experimentally show that an effective surface area enlargement of 1.67 times due to the corrugation provides a 1.06-fold increase of the enhancement factor. These results should assist in the future development of field emission devices based on semiconductor fabrication processes.

An interdigitated electrode with dense carbon nanotube forests on conductive supports for electrochemical biosensors.

A highly sensitive interdigitated electrode (IDE) with vertically aligned dense carbon nanotube forests directly grown on conductive supports was demonstrated by combining UV lithography and a low temperature chemical vapor deposition process (470 °C). The cyclic voltammetry (CV) measurements of K4[Fe(CN)6] showed that the redox current of the IDE with CNT forests (CNTF-IDE) reached the steady state much more quickly compared to that of conventional gold IDE (Au-IDE). The performance of the CNTF-IDE largely depended on the geometry of the electrodes (e.g. width and gap). With the optimum three-dimensional electrode structure, the anodic current was amplified by a factor of ∼18 and ∼67 in the CV and the chronoamperometry measurements, respectively. The collection efficiency, defined as the ratio of the cathodic current to the anodic current at steady state, was improved up to 97.3%. The selective detection of dopamine (DA) under the coexistence of l-ascorbic acid with high concentration (100 µM) was achieved with a linear range of 100 nM-100 µM, a sensitivity of 14.3 mA mol-1 L, and a limit of detection (LOD, S/N = 3) of 42 nM. Compared to the conventional carbon electrodes, the CNTF-IDE showed superior anti-fouling property, which is of significant importance for practical applications, with a negligible shift of the half-wave potential (ΔE1/2 < 1.4 mV) for repeated CV measurements of DA at high concentration (100 µM).

Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling the Microscopic Root Cause of Dislocation Generation.

A comprehensive analysis of optical and photoluminescence images obtained from practical multicrystalline silicon wafers is conducted, utilizing various machine learning models for dislocation cluster region extraction, grain segmentation, and crystal orientation prediction. As a result, a realistic 3D model that includes the generation point of dislocation clusters is built. Finite element stress analysis on the 3D model coupled with crystal growth simulation reveals inhomogeneous and complex stress distribution and that dislocation clusters are frequently formed along the slip plane with the highest shear stress among twelve equivalents, concentrated along bending grain boundaries (GBs). Multiscale analysis of the extracted GBs near the generation point of dislocation clusters combined with ab initio calculations has shown that the dislocation generation due to the concentration of shear stress is caused by the nanofacet formation associated with GB bending. This mechanism cannot be captured by the Haasen-Alexander-Sumino model. Thus, this research method reveals the existence of a dislocation generation mechanism unique to the multicrystalline structure. Multicrystalline informatics linking experimental, theoretical, computational, and data science on multicrystalline materials at multiple scales is expected to contribute to the advancement of materials science by unraveling complex phenomena in various multicrystalline materials.

Artificial-intelligence-assisted mass fabrication of nanocantilevers from randomly positioned single carbon nanotubes.

Nanoscale cantilevers (nanocantilevers) made from carbon nanotubes (CNTs) provide tremendous benefits in sensing and electromagnetic applications. This nanoscale structure is generally fabricated using chemical vapor deposition and/or dielectrophoresis, which contain manual, time-consuming processes such as the placing of additional electrodes and careful observation of single-grown CNTs. Here, we demonstrate a simple and Artificial Intelligence (AI)-assisted method for the efficient fabrication of a massive CNT-based nanocantilever. We used randomly positioned single CNTs on the substrate. The trained deep neural network recognizes the CNTs, measures their positions, and determines the edge of the CNT on which an electrode should be clamped to form a nanocantilever. Our experiments demonstrate that the recognition and measurement processes are automatically completed in 2 s, whereas comparable manual processing requires 12 h. Notwithstanding the small measurement error by the trained network (within 200 nm for 90% of the recognized CNTs), more than 34 nanocantilevers were successfully fabricated in one process. Such high accuracy contributes to the development of a massive field emitter using the CNT-based nanocantilever, in which the output current is obtained with a low applied voltage. We further showed the benefit of fabricating massive CNT-nanocantilever-based field emitters for neuromorphic computing. The activation function, which is a key function in a neural network, was physically realized using an individual CNT-based field emitter. The introduced neural network with the CNT-based field emitters recognized handwritten images successfully. We believe that our method can accelerate the research and development of CNT-based nanocantilevers for realizing promising future applications.

The impact of geriatric nutritional risk index on one-year outcomes in hospitalized elderly patients with heart failure.

Background: Strategies that accurately predict outcomes in elderly heart failure (HF) patients have not been sufficiently established. In previous reports, nutritional status, ability to perform activities of daily living (ADL), and lower limb muscle strength are known prognostic factors associated with cardiac rehabilitation (CR). In the present study, we investigated which CR factors can accurately predict one-year outcomes in elderly patients with HF among the above factors. Methods: Hospitalized patients with HF over 65 years of age from January 2016 to January 2022 were retrospectively enrolled in the Yamaguchi Prefectural Grand Medical (YPGM) Center. They were consequently recruited to this single-center retrospective cohort study. Nutritional status, ADL, and lower limb muscle strength were assessed by geriatric nutritional risk index (GNRI), Barthel index (BI), and short physical performance battery (SPPB) at discharge, respectively. One year after discharge, the primary and secondary outcomes were evaluated by all-cause death or HF readmission and major adverse cardiac and cerebrovascular events (MACCE), respectively. Results: Overall, 1,078 HF patients were admitted to YPGM Center. Of those, 839 (median age 84.0, 52% female) met the study criteria. During the follow-up of 228.0 days, 72 patients reached all-cause death (8%), 215 experienced HF readmission (23%), and 267 reached MACCE (30%: 25 HF death, six cardiac death, and 13 strokes). A multivariate Cox proportional hazard regression analysis revealed that the GNRI predicted the primary outcome (Hazard ratio [HR]: 0.957; 95% confidence interval [CI]: 0.934-0.980; p < 0.001) and the secondary outcome (HR: 0.963; 95%CI: 0.940-0.986; p = 0.002). Furthermore, a multiple logistic regression model using the GNRI most accurately predicted the primary and secondary outcomes compared to those with the SPPB or BI models. Conclusion: A nutrition status model using GNRI provided a better predictive value than ADL ability or lower limb muscle strength. It should be recognized that HF patients with a low GNRI at discharge may have a poor prognosis at one year.

Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks.

Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107-108 are realized for CNT TFTs with mobility of ∼500 cm2 V-1 s-1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.

High thermal conductivity in wafer-scale cubic silicon carbide crystals.

High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m-1K-1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.

Electrical properties of carbon nanotube thin-film transistors fabricated using plasma-enhanced chemical vapor deposition measured by scanning probe microscopy.

The electrical properties of carbon nanotube thin-film transistors (CNT-FETs) fabricated using plasma-enhanced chemical vapor deposition (PECVD) were studied by scanning probe microscopy. The measured results suggest the formation of an island structure in the subthreshold regime and the disappearance of the island structure at the ON state. These results were explained by the change in the effective number of CNTs that contributed to the electrical conduction due to the gate-bias-dependent resistance of the semiconducting CNTs. The results obtained by Monte Carlo simulation revealed similar results. The effects of metallic CNTs with defects and the scatter of the drain current in the subthreshold regime were also examined.

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design.

The direct integration of gallium nitride (GaN) and diamond holds much promise for high-power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal-expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at room temperature. A small compressive stress exists in the GaN/diamond heterointerface, which is significantly smaller than that of the GaN-on-diamond structure with a transition layer formed by crystal growth. A 5.3 nm-thick intermediate layer composed of amorphous carbon and diamond is formed at the as-bonded heterointerface. Ga and N atoms are distributed in the intermediate layer by diffusion during the bonding process. Both the thickness and the sp2 -bonded carbon ratio of the intermediate layer decrease as the annealing temperature increases, which indicates that the amorphous carbon is directly converted into diamond after annealing. The diamond of the intermediate layer acts as a seed crystal. After annealing at 1000 °C, the thickness of the intermediate layer is decreased to approximately 1.5 nm, where lattice fringes of the diamond (220) plane are observed.

Thin film transistors using PECVD-grown carbon nanotubes.

Thin film transistors with a carbon nanotube (CNT) network as a channel have been fabricated using grid-inserted plasma-enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of the CNTs with semiconducting behavior in the I-V characteristics of CNT field effect transistors (CNT-FETs). Taking advantage of the preferential growth and suppression of bundle formation, a large ON current of 170 microA mm(-1), which is among the largest in these kinds of devices with a large ON/OFF current ratio of about 10(5), has been realized in the relatively short channel length of 10 microm. The field effect mobility of the device was 5.8 cm(2) V(-1) s(-1).

Electrical breakdown of individual Si nanochains and silicide nanochains.

Electron transport across individual Si nanochains and silicide nanochains is investigated using a micro-manipulator in a transmission electron microscope. The current increases nonlinearly with increasing the bias voltage. Electrical breakdowns occur with a current typically as large as 10(1)-10(2) nA. Furthermore, some FN plots exhibit a bend presumably due to the formation of a heavily distorted nanotube of carbon.

Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors.

Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs.

Parametric study of alcohol catalytic chemical vapor deposition for controlled synthesis of vertically aligned single-walled carbon nanotubes.

In this study we examine catalyst preparation and chemical vapor deposition (CVD) parameters related to synthesis of single-walled carbon nanotubes (SWNTs) by alcohol catalytic CVD. We show that modifying the catalyst recipe considerably changes the average SWNT diameter, and vertically aligned arrays with an average diameter of 1.5 nm were obtained. The height of vertically aligned SWNT arrays can be significantly enhanced by surface modification of the substrate prior to dip-coating, although this produces SWNTs with larger diameters at the root of the array. We demonstrate patterned growth by combining this method with suppression of SWNT synthesis by formation of a hydrophobic surface. We also consider the effects of ethanol flow rate and thermal decomposition on the chemical environment at the substrate. The growth process is considerably altered by the extent of ethanol decomposition, with sudden termination of the growth occurring in the extreme low-flow (complete decomposition) case.

In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM.

Optoelectronic properties of nanoscale twin boundaries (TBs) in indirect-gap AlGaAs layers were studied by polarized cathodoluminescence spectroscopy in a transmission electron microscope. TBs arranged orderly in a short range, i.e. four or more parallel TBs arranged at regular intervals of nanometre length, emitted an intense monochromatic light polarized parallel to the boundaries. The intensity and the photon energy of the light were examined at different temperatures with different electron fluxes, and the origin of the light was discussed based on a twinning superlattice model. According to the study, it was suggested that the photon energy is tunable by controlling the intervals of TBs, without changing the crystal structure and the composition.

Carbon Nanotube Thin Films for High-Performance Flexible Electronics Applications.

Carbon nanotube thin films have attracted considerable attention because of their potential use in flexible/stretchable electronics applications, such as flexible displays and wearable health monitoring devices. Due to recent progress in the post-purification processes of carbon nanotubes, high-purity semiconducting carbon nanotubes can be obtained for thin-film transistor applications. One of the key challenges for the practical use of carbon nanotube thin-film transistors is the thin-film formation technology, which is required for achieving not only high performance but also uniform device characteristics. In this paper, after describing the fundamental thin-film formation techniques, we review the recent progress of thin-film formation technologies for carbon nanotube-based flexible electronics.

Highly Uniform, Flexible Microelectrodes Based on the Clean Single-Walled Carbon Nanotube Thin Film with High Electrochemical Activity.

Electrochemical sensors based on carbon nanotubes (CNTs) have great potential for use in wearable or implantable biomedical sensor applications because of their excellent mechanical flexibility and biocompatibility. However, the main challenge associated with CNT-based sensors is their uniform and reproducible fabrication on the flexible plastic film. Here, we introduce and demonstrate a highly reliable technique to fabricate flexible CNT microelectrodes on a plastic film. The technique involves a process whereby the CNT film is formed by the dry transfer process based on the floating-catalyst chemical vapor deposition. An oxide protection layer, which is used to cover the CNT thin film during the fabrication process, minimizes contamination of the surface. The fabricated flexible CNT microelectrodes show almost ideal electrochemical characteristics for microelectrodes with the average value of the quartile potentials, Δ E = | E3/4 - E1/4|, being 60.4 ± 2.9 mV for the 28 electrodes, while the ideal value of Δ E = 56.4 mV. The CNT microelectrodes also showed enhanced resistance to surface fouling during dopamine oxidation in comparison to carbon fiber and gold microelectrodes; the degradation of the oxidation current after 10 consecutive cycles were 1.8, 8.3, and 13.9% for CNT, carbon fiber, and gold microelectrodes, respectively. The high-sensitivity detection of dopamine is also demonstrated with differential-pulse voltammetry, with a resulting limit of detection of ∼50 nM. The reliability, uniformity, and sensitivity of the present CNT microelectrodes provide a platform for flexible electrochemical sensors.

Origins of the variability of the electrical characteristics of solution-processed carbon nanotube thin-film transistors and integrated circuits.

Carbon nanotube (CNT) thin-film transistors based on solution processing have great potential for use in future flexible and wearable device technologies. However, the considerable variability of their electrical characteristics remains a significant obstacle to their practical use. In this work, we investigated the origins of the variability of these electrical characteristics by performing statistical analysis based on spatial autocorrelation and Monte Carlo simulation. The spatial autocorrelation of the on-current decreased with increasing distance on the order of millimetres, showing that macroscopic non-uniformity of the CNT density was one of the causes of the characteristic variability. In addition, even in the local regime where the macroscopic variability is negligible, the variability was greater than that expected based on the Monte Carlo simulation. The CNT aggregation could be attributed to microscopic variability. We also investigated the variability of the properties of integrated circuits such as inverters and ring oscillators fabricated on flexible plastic film. All of the inverters worked well, and their threshold voltage variations were fairly small. As the number of stages in the ring oscillator increased, the yield decreased, although the oscillation frequency variability improved.