1.
Opt Express
; 26(22): 28773-28792, 2018 Oct 29.
Artigo
em Inglês
| MEDLINE
| ID: mdl-30470049
RESUMO
We present an apodized, single etch-step, subwavelength grating (SWG) high positional freedom (HPF) grating coupler based on the 220 nm silicon-on-insulator (SOI) with 2µm BOX substrate. The grating coupler was designed for 1550 nm light with transverse electric (TE) polarization. It has a measured maximum coupling efficiency of -7.49 dB (17.8%) and a -1 dB/-3 dB bandwidth of ~14 nm/29.5 nm respectively. It was fabricated in a 300mm state of the art CMOS foundry. This work presents an SOI-based grating coupler with the highest-to the best of our knowledge- -1 dB single mode fiber lateral alignment of 21.4 µm × 10.1 µm.