Carrier-resolved photo-Hall effect.

The fundamental parameters of majority and minority charge carriers-including their type, density and mobility-govern the performance of semiconductor devices yet can be difficult to measure. Although the Hall measurement technique is currently the standard for extracting the properties of majority carriers, those of minority carriers have typically only been accessible through the application of separate techniques. Here we demonstrate an extension to the classic Hall measurement-a carrier-resolved photo-Hall technique-that enables us to simultaneously obtain the mobility and concentration of both majority and minority carriers, as well as the recombination lifetime, diffusion length and recombination coefficient. This is enabled by advances in a.c.-field Hall measurement using a rotating parallel dipole line system and an equation, ΔµH = d(σ2H)/dσ, which relates the hole-electron Hall mobility difference (ΔµH), the conductivity (σ) and the Hall coefficient (H). We apply this technique to various solar absorbers-including high-performance lead-iodide-based perovskites-and demonstrate simultaneous access to majority and minority carrier parameters and map the results against varying light intensities. This information, which is buried within the photo-Hall measurement1,2, had remained inaccessible since the original discovery of the Hall effect in 18793. The simultaneous measurement of majority and minority carriers should have broad applications, including in photovoltaics and other optoelectronic devices.

Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites.

Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells.

Improving Uniformity and Reproducibility of Hybrid Perovskite Solar Cells via a Low-Temperature Vacuum Deposition Process for NiOx Hole Transport Layers.

Recently, the trend in inverted hybrid perovskite solar cells (PVSCs) has been to utilize NiOx as hole transport layers. However, the majority of reported solution-processed NiOx films require a high-temperature thermal annealing process, which is unfavorable for large-scale manufacturing and suffers from lack of uniformity. We report, for the first time, e-beam evaporation as a low-temperature vacuum process for the deposition of NiOx hole transport layers for PVSCs. Device characterization shows that efficiency is on par with solution-processed methods, the highest efficiency at 15.4% with no obvious hysteresis. Differences are found to be due to the presence of more Ni3+ in e-beam evaporated NiOx, which are responsible for a lower transmittance but higher conductivity. Most importantly, e-beam-evaporated NiOx-based PVSCs show greater uniformity and reproducibility compared to spin-coated NiOx-based PVSCs. Finally, e-beam-evaporated NiOx has the additional advantage of being produced by a low-temperature deposition process and applicable over large areas. This work, therefore, represents a significant step toward large-area PVSCs, where e-beam evaporation can be used for the low-temperature uniform deposition of charge-transport layers, such as NiOx.

An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure.

An ultrahigh performance MoS2 photodetector with high photoresponsivity (1.94 × 10(6) A W(-1) ) and detectivity (1.29 × 10(12) Jones) under 520 nm and 4.63 pW laser exposure is demonstrated. This photodetector is based on a methyl-ammonium lead halide perovskite/MoS2 hybrid structure with (3-aminopropyl)triethoxysilane doping. The performance degradation caused by moisture is also minimized down to 20% by adopting a new encapsulation bilayer of octadecyltrichlorosilane/polymethyl methacrylate.