Detalhe da pesquisa
1.
Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment.
Nanomaterials (Basel)
; 14(6)2024 Mar 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-38535670
2.
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.
Micromachines (Basel)
; 14(7)2023 Jun 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-37512589
3.
A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication.
Nanomaterials (Basel)
; 13(16)2023 Aug 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-37630860
4.
Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication.
Micromachines (Basel)
; 14(8)2023 Jul 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-37630059
5.
A Low-Code Framework for Complex Crowdsourcing Work Based on Process Modeling.
Comput Intell Neurosci
; 2022: 9496741, 2022.
Artigo
em Inglês
| MEDLINE | ID: mdl-35528365
6.
High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application.
Micromachines (Basel)
; 13(4)2022 Apr 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-35457894
7.
QRS Detection Based on Improved Adaptive Threshold.
J Healthc Eng
; 2018: 5694595, 2018.
Artigo
em Inglês
| MEDLINE | ID: mdl-29736232