RESUMO
As experimental probes have matured to observe ultrafast transient and high frequency responses of materials and devices, so to have the theoretical methods to numerically and analytically simulate time- and frequency-resolved transport. In this review article, we discuss recent progress in the development of the time-dependent and frequency-dependent non-equilibrium Green function (NEGF) technique. We begin with an overview of the theoretical underpinnings of the underlying Kadanoff-Baym equations and derive the fundamental NEGF equations in the time and frequency domains. We discuss how these methods have been applied to a variety of condensed matter systems such as molecular electronics, nanoscale transistors, and superconductors. In addition, we survey the application of NEGF in fields beyond condensed matter, where it has been used to study thermalization in ultra-cold atoms and to understand leptogenesis in the early universe. Throughout, we pay special attention to the challenges of incorporating contacts and interactions, as the NEGF method is uniquely capable of accounting for such features.
RESUMO
The realization of high-performance, small-footprint, on-chip inductors remains a challenge in radio-frequency and power microelectronics, where they perform vital energy transduction in filters and power converters. Modern planar inductors consist of metallic spirals that consume significant chip area, resulting in low inductance densities. We present a novel method for magnetic energy transduction that utilizes ferromagnetic islands (FIs) on the surface of a 3D time-reversal-invariant topological insulator (TI) to produce paradigmatically different inductors. Depending on the chemical potential, the FIs induce either an anomalous or quantum anomalous Hall effect in the topological surface states. These Hall effects direct current around the FIs, concentrating magnetic flux and producing a highly inductive device. Using a novel self-consistent simulation that couples AC non-equilibrium Green functions to fully electrodynamic solutions of Maxwell's equations, we demonstrate excellent inductance densities up to terahertz frequencies, thus harnessing the unique properties of topological materials for practical device applications.